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HN62W454B Series 262144-word x 16-bit CMOS Mask Programmable ROM ADE-203-682 (Z) Preliminary Rev. 0.0 Nov. 18, 1996 Description The HN62W454B is a 262144 words by 16 bits CMOS Mask Programmable ROM. A high speed access of 120/150 ns (max) is the most suitable to the system using a high speed micro-computer by 16 bits. Features * Low voltage operation: 3.3 V 0.3 V * High speed Access time: 120/150 ns (max) * Low power Active: 216 mW (max) Standby: 108 W (max) * Directly LVTTL compatible * All inputs and outputs Ordering Information Type No. HN62W454BP-12 HN62W454BP-15 HN62W454BCP-12 HN62W454BCP-15 Access time 120 ns 150 ns 120 ns 150 ns Package 600 mil 40-pin plastic DIP (DP-40) 44-pin plastic PLCC (CP-44) Preliminary: The specification of this device are subject to change without notice. Please contact your nearest Hitachi's Sales Dept. regarding specification. HN62W454B Series Pin Arrangement HN62W454BP Series NC CE D15 D14 D13 D12 D11 D10 D9 D8 VSS D7 D6 D5 D4 D3 D2 D1 D0 OE 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 (Top View) 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 VDD A17 A16 A15 A14 A13 A12 A11 A10 A9 VSS A8 A7 A6 A5 A4 A3 A2 A1 A0 HN62W454BCP Series VDD D13 D14 D15 CE NC NC 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 D3 D2 D1 D0 OE NC A0 A1 A2 A3 A4 A17 A16 A15 A14 39 38 37 36 35 34 33 32 31 30 29 6 5 4 3 2 1 44 43 42 41 40 D12 D11 D10 D9 D8 VSS NC D7 D6 D5 D4 A13 A12 A11 A10 A9 VSS NC A8 A7 A6 A5 (Top View) Pin Description Pin name A0 to A17 D0 to D15 CE OE NC VDD VSS Function Address inputs Data outputs Chip enable Output enable No connection Power supply Ground 2 HN62W454B Series Block Diagram A12 A2 A17 A13 X Decoder Memory Array Address Buffer Y Decoder Y Gates A1 A0 OE 3-state output buffer CE D0 D15 Mode Selection Pin Address input Mode Standby Output disable Read CE H L L OE x* H L 1 Data output High-Z* High-Z* Dout 2 2 LSB -- -- A0 MSB -- -- A17 Notes: 1. x: Don't care. 2. High-Z: High impedance 3 HN62W454B Series Absolute Maximum Ratings Parameter Supply voltage* 1 1 Symbol VDD Vin, Vout Topr Tstg Tbias Value -0.3 to + 5.5 -0.3 to VDD + 0.3 0 to + 70 -55 to + 125 -20 to + 85 Unit V V C C C All input and output voltage* Operating temperature range Storage temperature range Temperature under bias Note: 1. With respect to V SS . Recommended DC Operating Conditions (Ta = 0 to + 70C) Parameter Supply voltage Symbol VDD VSS Input voltage VIH VIL Min 3.0 0 2.2 -0.3 Typ 3.3 0 -- -- Max 3.6 0 VDD + 0.3 0.8 Unit V V V V DC Characteristics (VDD = 3.3 V 0.3 V, V SS = 0 V, Ta = 0 to + 70C) Parameter Supply current Active Standby Standby Input leakage current Output leakage current Output voltage Symbol I DD I SB1 I SB2 |IIL| |IOL | VOH VOL Min -- -- -- -- -- 2.4 -- Max 60/50 30 3 10 10 -- 0.4 Unit mA A mA A A V V Test conditions VDD = 3.6 V, IDOUT = 0 mA, tRC = 120/150 ns VDD = 3.6 V, CE VDD - 0.2 V VDD = 3.6 V, CE 2.2 V Vin = 0 to VDD CE = 2.2 V, Vout = 0 to V DD I OH = -2.0 mA I OL = 2.0 mA Capacitance (VDD = 3.3 V 0.3 V, V SS = 0 V, Ta = 25C, Vin = 0 V, f = 1MHz) Parameter Input capacitance* 1 1 Symbol Cin Cout Min -- -- Max 10 15 Unit pF pF Output capacitance* Note: 1. This parameter is sampled and not 100% tested. 4 HN62W454B Series AC Characteristics (VDD = 3.3 V 0.3 V, V SS = 0 V, Ta = 0 to + 70C) * * * * Output load: 1TTL + CL = 100 pF (including jig) Input pulse level: 0.4 to 2.4 V Input and output timing reference levels: 1.4 V Input rise and fall time: 5 ns HN62W454B-12 Parameter Read cycle time Address access CE access time OE access time Output hold time from address change Output hold time from CE Output hold time from OE CE to output in high-Z OE to output in high-Z CE to output in low-Z OE to output in low-Z Note: Symbol t RC t AA t ACE t OE t DHA t DHC t DHO t CHZ t OHZ t CLZ t OLZ Min 120 -- -- -- 0 0 0 -- -- 5 5 Max -- 120 120 60 -- -- -- 50 50 -- -- HN62W454B-15 Min 150 -- -- -- 0 0 0 -- -- 5 5 Max -- 150 150 70 -- -- -- 60 60 -- -- Unit ns ns ns ns ns ns ns ns ns ns ns 1 1 Note 1. t CHZ and tOHZ are defined as the time at which the output achieves the open circuit conditions and are not referred to output voltage levels. 5 HN62W454B Series Timing Waveform t RC Address t AA t ACE CE t CLZ t OE OE t OLZ Dout High-Z Valid data t DHO t OHZ High-Z t DHC t CHZ t DHA Notes: 1. tDHA, t DHC, tDHO: Determined by faster. 2. t AA, tACE , tOE: Determined by slower. 3. t CLZ , t OLZ : Determined by slower. 6 HN62W454B Series Package Dimensions HN62W454BP Series (DP-40) Unit: mm 40 52.8 53.8 Max 21 13.4 14.6 Max 2.54 Min 5.08 Max 1 1.2 20 15.24 0.51 Min 2.54 0.25 0.48 0.10 0.25 - 0.05 0 - 15 + 0.11 HN62W454BCP Series (CP-44) 17.53 0.12 16.58 39 40 17.53 0.12 44 1 29 28 Unit: mm 4.40 0.20 6 7 0.74 17 18 2.55 0.15 0.43 0.10 1.27 15.50 0.50 0.10 15.50 0.50 7 HN62W454B Series When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 For further information write to: Hitachi America, Ltd. Semiconductor & IC Div. 2000 Sierra Point Parkway Brisbane, CA. 94005-1835 USA Tel: 415-589-8300 Fax: 415-583-4207 Hitachi Europe GmbH Electronic Components Group Continental Europe Dornacher Strae 3 D-85622 Feldkirchen Munchen Tel: 089-9 91 80-0 Fax: 089-9 29 30 00 Hitachi Europe Ltd. Electronic Components Div. Northern Europe Headquarters Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA United Kingdom Tel: 0628-585000 Fax: 0628-778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 0104 Tel: 535-2100 Fax: 535-1533 Hitachi Asia (Hong Kong) Ltd. Unit 706, North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel: 27359218 Fax: 27306071 8 HN62W454B Series Revision Record Rev. 0.0 Date Nov. 18, 1996 Contents of Modification Initial issue Drawn by Approved by 9 |
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