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| P ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som IM REL Y NAR I MITSUBISHI Pch POWER MOSFET FX30KMJ-2 HIGH-SPEED SWITCHING USE FX30KMJ-2 OUTLINE DRAWING 10 0.3 Dimensions in mm 2.8 0.2 15 0.3 3.2 0.2 14 0.5 3.6 0.3 1.1 0.2 1.1 0.2 0.75 0.15 6.5 0.3 3 0.3 E 0.75 0.15 2.54 0.25 2.54 0.25 1 23 3 * 4V DRIVE * VDSS ............................................................. -100V * rDS (ON) (MAX) .............................................. 0.143 * ID .................................................................... -30A * Integrated Fast Recovery Diode (TYP.) .........100ns * Viso ................................................................................ 2000V APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. 2.6 0.2 1 1 GATE 2 DRAIN 3 SOURCE 2 TO-220FN MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg Viso -- (Tc = 25C) Parameter Drain-source voltage Gate-source voltage Drain current VGS = 0V VDS = 0V Conditions Ratings -100 20 -30 -120 -30 -30 -120 30 -55 ~ +150 -55 ~ +150 2000 2.0 4.5 0.2 Unit V V A A A A A W C C V g Jan.1999 Drain current (Pulsed) Avalanche drain current (Pulsed) L = 30H Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight AC for 1minute, Terminal to case Typical value P ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som IM REL Y NAR I MITSUBISHI Pch POWER MOSFET FX30KMJ-2 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter (Tch = 25C) Test conditions ID = -1mA, VGS = 0V VGS = 20V, VDS = 0V VDS = -100V, VGS = 0V ID = -1mA, VDS = -10V ID = -15A, VGS = -10V ID = -15A, VGS = -4V ID = -15A, VGS = -10V ID = -15A, VDS = -10V VDS = -10V, VGS = 0V, f = 1MHz Limits Min. -100 -- -- -1.0 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. -- -- -- -1.5 0.113 0.135 -1.65 20 4450 330 170 16 54 270 129 -1.0 -- 100 Max. -- 0.1 -0.1 -2.0 0.143 0.176 -2.15 -- -- -- -- -- -- -- -- -1.5 4.17 -- Unit V A mA V V S pF pF pF ns ns ns ns V C/W ns Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time VDD = -50V, ID = -15A, VGS = -10V, RGEN = RGS = 50 IS = -15A, VGS = 0V Channel to case IS = -30A, dis/dt = 100A/s PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 50 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA -2 -102 40 -7 -5 -3 -2 tw = 10s 30 -101 -7 -5 -3 -2 100s TC = 25C Single Pulse 1ms 10ms 100ms 20 10 -100 -7 -5 0 0 50 100 150 200 DC -3 -2 -2 -3 -5-7-100 -2 -3 -5-7-101 -2 -3 -5-7-102 -2 CASE TEMPERATURE TC (C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) -50 VGS = -10V -8V -6V -5V OUTPUT CHARACTERISTICS (TYPICAL) -20 VGS = -10V -6V -4V -3V Tc = 25C Pulse Test Tc = 25C Pulse Test DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) -40 -16 -30 -4V -12 -20 -3V -8 -2.5V -10 PD = 30W -4 PD = 30W 0 0 -4 -8 -12 -16 -20 0 0 -2 -4 -6 -8 -10 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Jan.1999 P ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som IM REL Y NAR I MITSUBISHI Pch POWER MOSFET FX30KMJ-2 HIGH-SPEED SWITCHING USE ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 200 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (m) Tc = 25C Pulse Test ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) -20 DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) -16 160 VGS = -4V -12 120 -10V -8 ID = -50A -30A -15A 80 Tc = 25C Pulse Test -4 40 0 -10-1 -2 -3 -5 -7 -100 -2 -3 -5 -7 -101 -2 -3 -5 -7 -102 DRAIN CURRENT ID (A) 0 0 -2 -4 -6 -8 -10 GATE-SOURCE VOLTAGE VGS (V) TRANSFER CHARACTERISTICS (TYPICAL) -50 102 7 5 4 3 2 FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) DRAIN CURRENT ID (A) -30 Tc = 25C VDS = -10V Pulse Test FORWARD TRANSFER ADMITTANCE yfs (S) -40 TC = 25C 75C 125C 101 7 5 4 3 2 -20 -10 VDS = -10V Pulse Test 0 0 -2 -4 -6 -8 -10 100 -7-100 -2 -3 -4-5 -7 -101 -2 -3 -4-5 -7 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 104 7 5 Ciss Tch = 25C VGS = 0V f = 1MHZ Coss SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 Tch = 25C VGS = -10V VDD = -50V RGEN = RGS = 50 td(off) tf SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) 3 2 3 2 103 7 5 3 2 102 7 5 3 2 td(on) tr 102 7 5 3 2 Crss -3 -5 -7-100 -2 -3 -5 -7-101 -2 -3 -5 -7-102 -2 -3 101 -7 -100 -2 -3 -4-5 -7 -101 -2 -3 -4-5 -7 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) Jan.1999 P ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som IM REL Y NAR I MITSUBISHI Pch POWER MOSFET FX30KMJ-2 HIGH-SPEED SWITCHING USE SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) -50 VGS = 0V Pulse Test GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) GATE-SOURCE VOLTAGE VGS (V) -10 SOURCE CURRENT IS (A) -8 VDS = -20V -40 -6 -40V -80V -30 TC = 25C -4 Tch = 25C ID = -30A -20 75C 125C -2 -10 0 0 20 40 60 80 100 0 0 -0.4 -0.8 -1.2 -1.6 -2.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 -4.0 7 5 3 2 THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) -3.2 VDS = -10V ID = -1mA -2.4 100 7 5 3 2 VGS = -10V ID = 1/2ID Pulse Test -1.6 -0.8 10-1 -50 0 50 100 150 0 -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) CHANNEL TEMPERATURE Tch (C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C) TRANSIENT THERMAL IMPEDANCE Zth (ch-c) (C/W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 2 D = 1.0 0.5 0.2 1.2 100 7 5 3 2 1.0 VGS = 0V ID = -1mA 0.8 10-1 7 5 3 2 0.6 0.1 0.05 0.02 0.01 Single Pulse PDM tw T D= tw T 0.4 -50 0 50 100 150 10-2 -4 10 2 3 5 710-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 PULSE WIDTH tw (s) Jan.1999 CHANNEL TEMPERATURE Tch (C) |
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