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| RB731U Diodes Schottky barrier diode RB731U !Applications High speed switching. !External dimensions (Units : mm) 2.90.2 1.90.2 1.1 +0.2 -0.1 1.6 +0.1 0.3 -0.05 +0.1 0.15 -0.06 !Construction Silicon epitaxial planar ROHM : SMD6 EIAJ : SC-74 JEDEC : SOT-457 !Circuit !Absolute maximum ratings (Ta=25C) Parameter Peak reverse voltage DC reverse voltage Mean rectifying current Peak forward surge current Junction temperature Storage temperature 60 Hz for 1 Symbol VRM VR IO IFSM Tj Tstg Limits 40 40 30 200 125 -40+125 Unit V V mA mA C C !Electrical characteristics (Ta=25C) Parameter Forward voltage Reverse current Capacitance between terminals Note) ESD sensitive product handling required. Symbol VF IR CT Min. - - - Typ. - - 2.0 Max. 0.37 1 - Unit V A pF IF=1mA VR=10V Conditions VR=1V, f=1MHz 0.30.6 D3P !Features 1) Small surface mounting type. (SMD6) 2) Low VF and low IR. 3) Three diodes in parallel for easy installation. 0.95 0.95 0.80.1 2.80.2 +0.2 -0.1 00.1 RB731U Diodes !Electrical characteristic curves (Ta=25C) Typ. pulse measurement FORWARD CURRENT : IF (A) Ta=125C CAPACITANCE BETWEEN TERMINALS : CT (pF) 1000m 100m 10m Ta=125C 1m 100 10 1 0 Ta=75C Ta=25C Ta=-25C 100 100 50 REVERSE CURRENT : IR (A) 10 Ta=75C 1 Ta=25C 20 10 5 100n Ta=-25C 10n 2 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1n 0 5 10 15 20 25 30 35 2 4 6 8 10 12 14 FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) REVERSE VOLTAGE : VR (V) Fig.1 Forward characteristics Fig.2 Reverse characteristics Fig.3 Capacitance between terminals characteristics 100 Io CURRENT (%) 80 60 40 20 0 0 25 50 75 100 125 AMBIENT TEMPERATURE : Ta (C) Fig.4 Derating curve (mounting on glass epoxy PCBs) |
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