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MITSUBISHI SEMICONDUCTOR
Technical Note
Specifications are subject to change without notice.
MGF7168C
UHF BAND GaAs POWER AMPLIFIER
DESCRIPTION
MGF7168C is a monolithic microwave integrated circuit for use in UHF-band power amplifier.
PIN CONFIGURATION (TOP VIEW)
Pi Vg1 Vd1 R Vd2 / Po Vg2 Pin : RF input (Note1) Pout : RF output (Note1) Vd1 : Drain bias 1 Vd2 : Drain bias 2 Vg1 : Gate bias 1 Vg2 : Gate bias 2 GND : Connect to GND CASE : Connect to GND : Connect to GND through R the resistor
Note1: Connect to matching circuits.
FEATURES
- Low voltage operation Vd=3.2V - High output power Po=33dBm (typ.) @1710~1785MHz Po=33dBm (typ.) @1850~1910MHz - High efficiency Id=1250mA (typ. ) @Po=33dBm - Small size 6.1x7.0x1.10mm - Surface mount package - 2 Stage Amplifier - External matching circuit is required
GND GND
APPLICATION
- 1.8GHz band handheld phone - 1.9GHz band handheld phone
QUALITY GRADE
- GG
*Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary, circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
MITSUBISHI ELECTRIC (1/12)
Mar.'97
MITSUBISHI SEMICONDUCTOR
MGF7168C
UHF BAND GaAs POWER AMPLIFIER
ABSOLUTE MAXIMUM RATINGS Symbol Vd1,Vd2 Vg1,Vg2 Pi Tc(op) Tstg Parameter Drain voltage Gate voltage Input power Operating case temperature Storage temparature Ratings 6 -4 15 -30~+85 -30~+100 Unit V V dBm C C
ELECTRICAL CHARACTERISTICS (Ta=25C)
Symbol f Pin Idt Ig 2sp in Parameter frequency Input power Total drain current Gate current 2nd harmonics input VSWR Damage with-standing Note3 Vd1=Vd2=3.2V, Pin<10dBm, Load VSWR=10, All phase Time=10 sec Vd1=Vd2=3.2V, Pin<10dBm, Load VSWR=3:1, All phase Vd1=Vd2=3.2V, Pin<10dBm, Po=33dBm Test conditions Note1,2 MIN 1710 1850 Vd1=Vd2=3.2V,Po=33dBm -- -- -- -- -- Limits TYP MAX -- -- -- 1250 -- -- -- 1785 MHz 1910 10 -- 3 -30 3 dBm mA mA dBc -- Unit
--
No damage
--
Stability Note3
No oscillation Spurious level<-60dBc
Note1 : Electrical characteristics are changed by the external matching circuit. Limits are guaranteed by using MITSUBISHI test fixture. Note2 : GMSK Pulse operation Note3 : Sampling inspection
MITSUBISHI ELECTRIC (2/12)
Mar.'97
MITSUBISHI SEMICONDUCTOR
MGF7168C
UHF BAND GaAs POWER AMPLIFIER
VG1
VG2
Pin
FET1 Matching circuits FET2
Pout
VD1
VD2
Equivalent circuit of MGF7168C with our test board
: MGF7168C(Ceramic package) : our test board(r=4.8, t=0.6mm)
MITSUBISHI ELECTRIC (3/12)
Mar.'97
MITSUBISHI SEMICONDUCTOR
MGF7168C
UHF BAND GaAs POWER AMPLIFIER
Input/Output Impedance ZI=4.5-j27.8 () : 1.88GHz ZL(max) = 3.3-j4.7 () : f=1.88GHz ZL(Po max)= 2.4-j5.8 () : f=1.88GHz
max 1150mA(Po>32.8dBm)
Pomax (33.8dBm)
Conditions; Vd1=Vd2=3.2V Vgg=-2.0V Pin=10dBm
MITSUBISHI ELECTRIC (4/12)
Mar.'97
MITSUBISHI SEMICONDUCTOR
MGF7168C
UHF BAND GaAs POWER AMPLIFIER
Equivalent Circuit of Test Board for PCS(DCS1900)
l=14.0 w=1.0 Pin
l=6.7 w=1.0
1.5pF
l=2.0 w=1.0 MGF 7168C
2.5pF
Vd2 l=28.6 w=0.5 l=2.7 w=2.2
1000pF
Pout 8pF 3pF l=11.7 w=3.5
Unit:mm SUB. data ER=4.8 H=600m Metal T=43m
MITSUBISHI ELECTRIC (5/12)
Mar.'97
MITSUBISHI SEMICONDUCTOR
MGF7168C
UHF BAND GaAs POWER AMPLIFIER
Pin vs. Pout, Idt, t for PCS1900
1500 70
35
30
1300
60
25
1100
50
Pout (dBm)
20 Idt (mA)
900
40
15
700
30
10
500
20
5
Pout Idt
300
Pout Efficiency
10
0 -5
100 0 5 Pin (dBm) 10 15 -5 0 5 Pin (dBm) Fin=1880MHz Vd1=Vd2=3.2V Id1=150mA,Id2=550mA CW evaluation 10 15
0
MITSUBISHI ELECTRIC (6/12)
Mar.'97
Efficiency (%)
MITSUBISHI SEMICONDUCTOR
MGF7168C
UHF BAND GaAs POWER AMPLIFIER
Input/Output Impedance (DCS1800)
ZI= 6.0-j22.4 () : 1.75GHz ZL(max) = 3.3-j2.6 () : 1.75GHz ZL(Po max)= 2.2-j3.5 () : 1.75GHz
0.1
max 1250mA(Po>33dBm)
Pomax (33.7dBm)
0.2 Conditions; Vd1=Vd2=3.2V Vgg=-2.0V Pin=10dBm
MITSUBISHI ELECTRIC (7/12)
Mar.'97
MITSUBISHI SEMICONDUCTOR
MGF7168C
UHF BAND GaAs POWER AMPLIFIER
Equivalent Circuit of Test Board for PCN(DCS1800)

l=14.0 w=1.0 Pin
l=6.7 w=1.0
2pF
l=2.0 w=1.0 MGF 7168C
3.5pF
Vd2 l=28.6 w=0.5 l=2.7 w=2.2
1000pF
Pout 15pF 3.5pF l=11.7 w=3.5
Unit:mm SUB. data ER=4.8 H=600m Metal T=43m
MITSUBISHI ELECTRIC (8/12)
Mar.'97
MITSUBISHI SEMICONDUCTOR
MGF7168C
UHF BAND GaAs POWER AMPLIFIER
Equivalent Circuit of Test Board for PCN (DCS1800)

l=2.0 w=1.0 Pin 3.5 pF
2 pF
l=2.0 w=1.0 MGF 7168C
Vd2 1000pF l=26 w=0.5
Pout l=2.7 w=2.2 3.0 pF 10 pF l=2.7 w=3.5 0.5 pF l=9.0 w=3.5
Unit:mm SUB. data ER=4.8 H=600m Metal T=43m
MITSUBISHI ELECTRIC (9/12)
Aug.'97
MITSUBISHI SEMICONDUCTOR
Preliminary information
MGF7168C
UHF BAND GaAs POWER AMPLIFIER
Pin vs. Pout, Idt, t for PCN/DCS1800
35 1500 70
30
1300
60
25
1100
50
15
Idt (mA)
700
30
10
500
20
5
Pout Idt
300
Pout Efficiency
10
0 -5 0 5 Pin (dBm) 10 15
100 -5 0 5 Pin (dBm) 10 15
0
Fin=1750MHz Vd1=Vd2=3.2V Id1=150mA,Id2=550mA CW evaluation
MITSUBISHI ELECTRIC (10/12)
Nov. '96
Efficiency (%)
Pout (dBm)
20
900
40
MITSUBISHI SEMICONDUCTOR
MGF7168C
UHF BAND GaAs POWER AMPLIFIER
Recommended Mount Pad
2.50 1.0 1.27 x 4=5.08 7.40 1.2 0.45 1.4 0.9 4.10 0.8 4.90 0.8 Unit:mm 2.16
MITSUBISHI ELECTRIC (11/12) Mar.'97
2.14
MITSUBISHI SEMICONDUCTOR
Preliminary information
MGF7168C
UHF BAND GaAs POWER AMPLIFIER
OUTLINE DRAWING
6.1+/-0.2
Note1
Unit : mm 0.3
5.2
1 8 7.0+/-0.2 2 3 4 6 5 7 6.2
1.1+/-0.2
4 - R0.2
0.3
2 - (2.4) 8 - (0.5) 8 - (0.4) Terminal Connection P1.27 x 4 = 5.08+/-0.1 (1.2) 1 2 3
INPUT Vg
4.28
6 - 0.8+/-0.1
4.1 8 - (4.9)
2 - (0.1)
Note1 : 1 pin mark Note2 : The values without tolerance are typical.
MITSUBISHI ELECTRIC (12/12) Mar.'97
2 - (0.1)
Vd1 4 MC 5 Vg 6 OUTPUT/Vd2 7 GND 8 GND Case:GND
2 - 2.06

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