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| PD -93988 IRFE9120 REPETITIVE A ALANCHE AND dv/dt RATED V HEXFET TRANSISTORS SURFACE MOUNT (LCC-18) JANTX2N6845U JANTXV2N6845U [REF:MIL-PRF-19500/563] 100V, P-CHANNEL Product Summary Part Number IRFE9120 BVDSS -100V RDS(on) ID 0.60 -3.5A The leadless chip carrier (LCC) package represents the logical next step in the continual evolution of surface mount technology. Desinged to be a close replacement for the TO-39 package, the LCC will give designers the extra flexibility they need to increase circuit board density. International Rectifier has engineered the LCC package to meet the specific needs of the power market by increasing the size of the bottom source pad, thereby enhancing the thermal and electrical performance. The lid of the package is grounded to the source to reduce RF interference. LCC-18 Features: ! ! ! ! ! ! ! ! Surface Mount Small Footprint Alternative to TO-39 Package Hermetically Sealed Dynamic dv/dt Rating Avalanche Energy Rating Simple Drive Requirements Light Weight Absolute Maximum Ratings Parameter ID @ VGS = -10V, TC = 25C ID @ VGS = -10V, TC = 100C I DM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight For footnotes refer to the last page -3.5 -2.2 -14 14 0.11 20 115 -5.0 -55 to 150 300 (for 5 S) 0.42(typical) Units A W W/C V mJ A mJ V/ns o C g www.irf.com 1 10/25/00 IRFE9120 Electrical Characteristics Parameter BVDSS BV DSS/TJ RDS(on) VGS(th) gfs IDSS @ Tj = 25C (Unless Otherwise Specified) Min -100 -- -- -- -2.0 1.25 -- -- -- -- -- -- -- -- -- -- -- -- Typ Max Units -- -0.10 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 6.1 -- -- 0.60 0.69 -4.0 -- -25 -250 -100 100 16.3 4.7 9.0 60 100 50 70 -- V V/C V S( ) A Test Conditions VGS = 0V, ID = -1.0mA Reference to 25C, ID =-1.0mA VGS =-10V, ID = -2.2A VGS =-10V, ID =-3.5A VDS = VGS, ID =250A VDS >-15V, IDS =-2.2A VDS=-80V, VGS=0V VDS =-80V VGS = 0V, TJ = 125C VGS = -20V VGS = 20V VGS =-10V, ID= -3.5A VDS =-50V VDD =- -50V, ID =-3.5A, RG =7.5 Drain-to-Source Breakdown Voltage Temperature Coefficient of Breakdown Voltage Static Drain-to-Source On-State Resistance Gate Threshold Voltage Forward Transconductance Zero Gate Voltage Drain Current IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance nA nC ns nH Measured from the center of drain pad to center of source pad VGS = 0V, VDS = -25V f = 1.0MHz Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance -- -- -- 380 170 45 -- -- pF Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD t rr QRR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units -- -- -- -- -- -- -- -- -- -- -3.5 -14 -4.8 200 3.1 Test Conditions A V nS c Tj = 25C, IS = -3.5A, VGS = 0V Tj = 25C, IF =-3.5A, di/dt -100A/s VDD -50V Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter R thJC R thJ-PCB Junction to Case Junction to PC Board Min Typ Max Units -- -- -- -- 9.1 C/W 26" " " Test Conditions Soldered to a copper clad PC board For footnotes refer to the last page 2 www.irf.com IRFE9120 Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRFE9120 13 a& b Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRFE9120 V DS VGS RG RD D.U.T. + -10V Pulse Width 1 s Duty Factor 0.1 % Fig 10a. Switching Time Test Circuit td(on) tr t d(off) tf VGS 10% 90% Fig 9. Maximum Drain Current Vs. Case Temperature VDS Fig 10b. Switching Time Waveforms Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com - V DD 5 IRFE9120 VDS L RG D.U.T IAS VDD A DRIVER -20V 10V tp 0.01 10V 15V Fig 12a. Unclamped Inductive Test Circuit I AS Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V(BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 50K 12V .2F .3F -10 V QGS VG QGD VGS -3mA Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com + D.U.T. - VDS IRFE9120 Repetitive Rating; Pulse width limited by maximum junction temperature. VDD =-25V, starting TJ = 25C, Peak IL = -3.5A, Foot Notes: ISD -3.5A, di/dt -110A/s, VDD -100V, TJ 150C Suggested RG =7.5 Pulse width 300 s; Duty Cycle 2% Case Outline and Dimensions -- LCC-18 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 10/00 www.irf.com 7 |
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