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PD - 94192B
HEXFET(R) POWER MOSFET THRU-HOLE (TO-257AA)
IRL7Y1905C 50V, N-CHANNEL
Product Summary
Part Number
IRL7Y1905C BVDSS
50V
RDS(on) 0.125
ID 10A
Seventh Generation HEXFET(R) power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits.
TO-257AA
Features:
n n n n n n n
Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25C ID @ VGS = 10V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight 10 5.0 20 15 0.12 16 20 10 7.5 2.2 -55 to 150 300 (0.063in./1.6mm from case for 10sec) 4.3 (Typical)
Units A
W
W/C
V mJ A mJ V/ns
o
C
g
For footnotes refer to the last page
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12/11/01
IRL7Y1905C
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BV DSS/T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
50 -- -- 1.0 1.1 -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- 0.058 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 6.8 -- -- 0.125 2.0 -- 10 25 100 -100 13 2.0 3.0 8.0 96 23 67 -- V V/C V S( ) A
Test Conditions
VGS = 0V, ID = 250A Reference to 25C, ID = 1.0mA VGS = 10V, ID = 10A VDS = VGS, ID = 250A VDS = 1.0V, IDS = 200mA VDS = 2.5V ,VGS=0V VDS = 2.5V, VGS = 0V, TJ =60C VGS = 2.5V VGS = -2.5V VGS =10V, ID =10A VDS = 44V VDD = 27.5V, ID = 10A, VGS = 5.0V, RG = 12
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA nC
ns
nH
Measured from drain lead (6mm/ 0.25in. from package) to source lead (6mm/0.25in. from package) VGS = 0V, VDS = 25V f = 1.0MHz
Ciss C oss C rss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
230 70 8.0
350 -- --
pF
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- 10 20 1.3 64 85
Test Conditions
A
V ns nC Tj = 25C, IS = 10A, VGS = 0V Tj = 25C, IF = 10A, di/dt 100A/s VDD 30V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC Junction-to-Case
Min Typ Max Units
-- -- 8.33
C/W
Test Conditions
Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page
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IRL7Y1905C
100
VGS TOP 15V 10V 4.5V 3.5V 3.0V 2.7V 2.5V BOTTOM 2.2V
100
VGS 15V 10V 4.5V 3.5V 3.0V 2.7V 2.5V BOTTOM 2.2V TOP
ID, Drain-to-Source Current (A)
ID , Drain-to-Source Current (A)
10
10
2.2V
1
1
2.2V
20s PULSE WIDTH Tj = 25C
0.1 0.1 1 10 100
20s PULSE WIDTH Tj = 150C
0.1 0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.5
R DS(on) , Drain-to-Source On Resistance (Normalized)
ID = 10A
ID, Drain-to-Source Current ( )
2.0
T J = 25C
10
1.5
T J = 150C
1.0
0.5
VDS = 15V 15 20s PULSE WIDTH
1 2.0 2.5 3.0 3.5 4.0 4.5
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRL7Y1905C
500
VGS , Gate-to-Source Voltage (V)
400
VGS = Ciss = Crss = Coss = 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd
20
ID = 10A
16
VDS = 44V VDS = 27V VDS = 11V
C, Capacitance (pF)
Ciss
300
12
200
C oss
8
100
4
C rss
0 1 10 100
0 0 4
FOR TEST CIRCUIT SEE FIGURE 13
8 12 16
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
100 OPERATION IN THIS AREA LIMITED BY R DS(on)
ISD , Reverse Drain Current (A)
TJ = 150 C
10
ID, Drain-to-Source Current (A)
10
TJ = 25 C
1
1 Tc = 25C Tj = 150C Single Pulse 0.1 1 10
1ms 10ms
0.1 0.4
V GS = 0 V
0.8 1.2 1.6
VSD ,Source-to-Drain Voltage (V)
100
VDS , Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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IRL7Y1905C
10.0
VDS VGS
RD
8.0
D.U.T.
+
I D , Drain Current (A)
RG
-VDD
6.0
VGS
Pulse Width 1 s Duty Factor 0.1 %
4.0
Fig 10a. Switching Time Test Circuit
2.0
VDS 90%
0.0 25 50 75 100 125 150
TC , Case Temperature ( C)
10% VGS
Fig 9. Maximum Drain Current Vs. Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
10
Thermal Response (Z thJC )
D = 0.50
0.20
1
0.10 0.05 0.02 0.01
SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 0.01
0.1 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.1
PDM t1 t2 1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRL7Y1905C
40
EAS , Single Pulse Avalanche Energy (mJ)
15V
30
TOP BOTTOM ID 4.5A 6.3A 10A
VDS
L
D R IV E R
RG
D .U .T.
IA S
20
+ - VD D
A
VGS 20V
tp
0 .01
10
Fig 12a. Unclamped Inductive Test Circuit
0 25 50 75 100 125 150
V (B R )D S S tp
Starting TJ , Junction Temperature ( C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
10 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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IRL7Y1905C
Footnotes:
Repetitive Rating; Pulse width limited by
maximum junction temperature. VDD = 25 V, Starting TJ = 25C, L= 0.4mH Peak IAS = 10A, VGS =10V, RG= 25
ISD 10A, di/dt 230 A/s, Pulse width 300 s; Duty Cycle 2%
VDD 50V, TJ 150C
Case Outline and Dimensions -- TO-257AA
A 10.66 [.420] 10.42 [.410] O 3.81 [.150] 3.56 [.140] 5.08 [.200] 4.83 [.190] 0.13 [.005] 1.14 [.045] 0.89 [.035]
13.63 [.537] 13.39 [.527] 18.29 [.720] 17.27 [.680] 1 2 3
16.89 [.665] 16.39 [.645] 10.66 [.420] 10.42 [.410] R 1.52 [.060] MIN.
B
C
(4.37 [.172]) 0.889 [.035] MAX. 0.88 [.035] 0.64 [.025] CA B 5 3.17 [.125] 2.93 [.115]
2.54 [.100] 2X 3X O
0.25 [.010] NOT ES : 1. 2. 3. 4. DIMENSIONING & TOLERANCING PER AS ME Y14.5M-1994. ALL DIMENSIONS ARE SHOWN IN MILLIMET ERS [INCHES]. CONT ROLLING DIMENSION: INCH. THIS OUT LINE IS A MODIFIED T O-257AA JEDEC OUT LINE.
PIN ASS IGNMENT S 1 = GAT E 2 = DRAIN 3 = SOURCE
5 LEADS ARE SOLDER DIPPED T O T HIS DIMENS ION. 6. LEADS TO BE T RIMMED T O 10.795 [.425] 0.635 [.025] BEFORE LEADFORMING.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 12/01
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