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| a FEATURES 44 V Supply Maximum Ratings V SS to VDD Analog Signal Range Low On Resistance (<35 ) Ultralow Power Dissipation (<35 W) Fast Switching Times tON (160 ns max) tOFF (100 ns max) Break-Before-Make Switching Action Plug-In Replacement for DG417 APPLICATIONS Precision Test Equipment Precision Instrumentation Battery Powered Systems Sample Hold Systems LC2MOS Precision Mini-DIP Analog Switch ADG417 FUNCTIONAL BLOCK DIAGRAM S D IN ADG417 SWITCH SHOWN FOR A LOGIC "1" INPUT GENERAL DESCRIPTION PRODUCT HIGHLIGHTS The ADG417 is a monolithic CMOS SPST switch. This switch is designed on an enhanced LC2MOS process that provides low power dissipation yet gives high switching speed, low on resistance and low leakage currents. The on resistance profile of the ADG417 is very flat over the full analog input range ensuring excellent linearity and low distortion. The part also exhibits high switching speed and high signal bandwidth. CMOS construction ensures ultralow power dissipation making the parts ideally suited for portable and battery powered instruments. The ADG417 switch, which is turned ON with a logic low on the control input, conducts equally well in both directions when ON and has an input signal range that extends to the supplies. In the OFF condition, signal levels up to the supplies are blocked. The ADG417 exhibits break-before-make switching action for use in multiplexer applications. Inherent in the design is low charge injection for minimum transients when switching the digital input. 1. Extended Signal Range The ADG417 is fabricated on an enhanced LC2MOS process, giving an increased signal range that extends to the supply rails. 2. Ultralow Power Dissipation 3. Low RON 4. Single Supply Operation For applications where the analog signal is unipolar, the ADG417 can be operated from a single rail power supply. The part is fully specified with a single +12 V power supply and will remain functional with single supplies as low as +5 V. REV. A Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 World Wide Web Site: http://www.analog.com Fax: 781/326-8703 (c) Analog Devices, Inc., 1998 ADG417-SPECIFICATIONS Dual Supply1 (V Parameter ANALOG SWITCH Analog Signal Range RON LEAKAGE CURRENTS Source OFF Leakage IS (OFF) Drain OFF Leakage ID (OFF) Channel ON Leakage ID, I S (ON) DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current IINL or IINH DYNAMIC CHARACTERISTICS2 tON tOFF Charge Injection OFF Isolation CS (OFF) CD (OFF) CD , CS (ON) POWER REQUIREMENTS IDD ISS IL DD = +15 V 10%, VSS = -15 V 10%, VL = +5 V 10%, GND = 0 V, unless otherwise noted) B Version -40 C to +25 C +85 C VSS to V DD 25 35 0.1 0.25 0.1 0.25 0.1 0.4 45 T Version -55 C to +25 C +125 C VSS to V DD 25 35 0.1 0.25 0.1 0.25 0.1 0.4 45 Units V typ max nA typ nA max nA typ nA max nA typ nA max V min V max A typ A max ns typ ns max ns typ ns max pC typ dB typ pF typ pF typ pF typ A typ A max A typ A max A typ A max Test Conditions/Comments VD = 12.5 V, IS = -10 mA VDD = +13.5 V, VSS = -13.5 V VDD = +16.5 V, VSS = -16.5 V VD = 15.5 V, VS = 15.5 V; Test Circuit 2 VD = 15.5 V, VS = 15.5 V; Test Circuit 2 VS = VD = 15.5 V; Test Circuit 3 5 5 5 2.4 0.8 0.005 0.5 15 15 30 2.4 0.8 0.005 0.5 VIN = VINL or V INH 100 160 60 100 7 80 6 6 55 0.0001 1 0.0001 1 0.0001 1 200 150 100 145 60 100 7 80 6 6 55 0.0001 1 0.0001 1 0.0001 1 200 150 RL = 300 , CL = 35 pF; VS = 10 V; Test Circuit 4 RL = 300 , CL = 35 pF; VS = 10 V; Test Circuit 4 VS = 0 V, RL = 0 , CL = 10 nF; Test Circuit 5 RL = 50 , f = 1 MHz; Test Circuit 6 VDD = +16.5 V, VSS = -16.5 V VIN = 0 V or 5 V 2.5 2.5 2.5 2.5 2.5 2.5 VL = +5.5 V NOTES 1 Temperature ranges are as follows: B Version: -40C to +85C; T Version: -55C to +125C. 2 Guaranteed by design, not subject to production test. Specifications subject to change without notice. -2- REV. A ADG417 Single Supply1 (V Parameter ANALOG SWITCH Analog Signal Range RON LEAKAGE CURRENT Source OFF Leakage IS (OFF) Drain OFF Leakage ID (OFF) Channel ON Leakage I D, I S (ON) DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current IINL or IINH DYNAMIC CHARACTERISTICS2 tON tOFF Charge Injection OFF Isolation CS (OFF) CD (OFF) CD , CS (ON) POWER REQUIREMENTS IDD IL DD = +12 V 10%, VSS = 0 V, VL = +5 V B Version -40 C to +25 C +85 C 0 to VDD 40 60 0.1 0.25 0.1 0.25 0.1 0.4 10%, GND = 0 V, unless otherwise noted) T Version -55 C to +25 C +125 C 0 to VDD 40 70 0.1 0.25 0.1 0.25 0.1 0.4 Units V typ max nA typ nA max nA typ nA max nA typ nA max V min V max A typ A max ns max ns max pC typ dB typ pF typ pF typ pF typ A typ A max A typ A max Test Conditions/Comments VD = +3 V, +8.5 V, IS = -10 mA VDD = +10.8 V VDD = +13.2 V VD = 12.2 V/1 V, VS = 1 V/12.2 V; Test Circuit 2 VD = 12.2 V/1 V, VS = 1 V/12.2 V; Test Circuit 2 VS = VD = 12.2 V/1 V; Test Circuit 3 5 5 5 2.4 0.8 0.005 0.5 15 15 30 2.4 0.8 0.005 0.5 VIN = VINL or V INH 180 85 11 80 13 13 65 0.0001 1 0.0001 1 250 110 180 85 11 80 13 13 65 0.0001 1 0.0001 1 250 110 RL = 300 , CL = 35 pF; VS = +8 V; Test Circuit 4 RL = 300 , CL = 35 pF; VS = +8 V; Test Circuit 4 VS = 0 V, RS = 0 , CL = 10 nF; Test Circuit 5 RL = 50 , f = 1 MHz; Test Circuit 6 VDD = +13.2 V VIN = 0 V or 5 V VL = +5.5 V 2.5 2.5 2.5 2.5 NOTES 1 Temperature ranges are as follows: B Version: -40C to +85C; T Version: -55C to +125C. 2 Guaranteed by design, not subject to production test. Specifications subject to change without notice. Table I. Truth Table PIN CONFIGURATION DIP/SOIC Logic 0 1 Switch Condition ON OFF S1 NC 2 8 D VSS TOP VIEW GND 3 (Not to Scale) 6 IN 7 ADG417 ORDERING GUIDE VDD 4 5 VL Model ADG417BN ADG417BR Temperature Range -40C to +85C -40C to +85C Package Options* N-8 SO-8 NC = NO CONNECT *N = Plastic DIP, SO = 0.15" Small Outline IC (SOIC). REV. A -3- ADG417 ABSOLUTE MAXIMUM RATINGS 1 (TA = +25C unless otherwise noted) VDD to VSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +44 V VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 V to +25 V VSS to GND . . . . . . . . . . . . . . . . . . . . . . . . . . +0.3 V to -25 V VL to GND . . . . . . . . . . . . . . . . . . . . . . -0.3 V to VDD + 0.3 V Analog, Digital Inputs2 . . . . . . . . . . . . . VSS - 2 V to VDD +2 V or 30 mA, Whichever Occurs First Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . . 30 mA Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA (Pulsed at 1 ms, 10% Duty Cycle Max) Operating Temperature Range Industrial (B Version) . . . . . . . . . . . . . . . . . -40C to +85C Extended (T Version) . . . . . . . . . . . . . . . . -55C to +125C Storage Temperature Range . . . . . . . . . . . . . -65C to +150C Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . 150C Plastic Package, Power Dissipation . . . . . . . . . . . . . . . 400 mW JA, Thermal Impedance . . . . . . . . . . . . . . . . . . . . 100C/W Lead Temperature, Soldering (10 sec) . . . . . . . . . . . +260C SOIC Package, Power Dissipation . . . . . . . . . . . . . . . . 400 mW JA, Thermal Impedance . . . . . . . . . . . . . . . . . . . . 155C/W Lead Temperature, Soldering Vapor Phase (60 sec). . . . . . . . . . . . . . . . . . . . . . . +215C Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . +220C NOTES 1 Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Only one absolute maximum rating may be applied at any one time. 2 Overvoltages at IN, S or D will be clamped by internal diodes. Current should be limited to the maximum ratings given. CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the ADG417 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. WARNING! ESD SENSITIVE DEVICE TERMINOLOGY VDD VSS VL GND S D IN RON IS (OFF) ID (OFF) ID, IS (ON) Most positive power supply potential. Most negative power supply potential in dual supplies. In single supply applications, it may be connected to GND. Logic power supply (+5 V). Ground (0 V) reference. Source terminal. May be an input or an output. Drain terminal. May be an input or an output. Logic control input. Ohmic resistance between D and S. Source leakage current with the switch "OFF." Drain leakage current with the switch "OFF." Channel leakage current with the switch "ON." Analog voltage on terminals D, S. "OFF" switch source capacitance. "OFF" switch drain capacitance. "ON" switch capacitance. Delay between applying the digital control input and the output switching on. Delay between applying the digital control tOFF input and the output switching off. Maximum input voltage for logic "0." VINL VINH Minimum input voltage for logic "1." IINL (IINH) Input current of the digital input. Charge Injection A measure of the glitch impulse transferred from the digital input to the analog output during switching. Off Isolation A measure of unwanted signal coupling through an "OFF" channel. Positive supply current. IDD ISS Negative supply current. IL Logic supply current. VD (VS) CS (OFF) CD (OFF) CD, CS (ON) tON -4- REV. A Typical Performance Characteristics-ADG417 50 TA = +25 C 40 VDD = +5V VSS = -5V 80 100 TA = +25 C VDD = +5V VSS = 0V 30 RON - RON - VDD = +12V VSS = -12V 60 VDD = +10V VSS = -10V VDD = +10V VSS = 0V 20 VDD = +15V VSS = -15V 40 VDD = +12V VSS = 0V 10 20 VDD = +15V VSS = 0V 0 -15 0 -10 -5 0 VS, VD - Volts 5 10 15 0 5 VS, VD - Volts 10 15 Figure 1. RON as a Function of VD (VS): Dual Supply Voltage Figure 4. R ON as a Function of VD (V S): Single Supply Voltage 100 50 VDD = +15V VSS = -15V VL = +5V 40 80 VDD = +12V VSS = 0V VL = +5V 30 RON - RON - +125 C 20 +85 C +25 C 10 60 +125 C 40 +85 C +25 C 20 0 -15 -10 -5 0 VS, VD - Volts 5 10 15 0 0 3 6 VS, VD - Volts 9 12 Figure 2. RON as a Function of VD (VS) for Different Temperatures Figure 5. R ON as a Function of VD (V S) for Different Temperatures 0.02 VDD = +15V VSS = -15V TA = +25 C ID (ON) 0.006 VDD = +12V VSS = 0V TA = +25 C ID (ON) 0.002 IS (OFF) ID (OFF) LEAKAGE CURRENT - nA 0.01 0.004 LEAKAGE CURRENT - nA 15 IS (OFF) 0.00 ID (OFF) -0.01 0.000 -0.02 -0.002 -0.03 -15 -10 -5 0 VS, VD - Volts 5 10 -0.004 0 2 4 6 VS, VD - Volts 8 10 12 Figure 3. Leakage Currents as a Function of V S (VD) Figure 6. Leakage Currents as a Function of V S (VD) REV. A -5- ADG417 10mA VDD = +15V VSS = -15V VL = +5V 300 VIN = +5V 250 1mA 100 A I+, I- I SUPPLY 200 t - ns 10 A 1A IL 100nA 10nA 1nA 102 103 104 105 FREQUENCY - Hz 106 107 tON - SINGLE SUPPLY 150 100 tON - DUAL SUPPLY tOFF - DUAL SUPPLY 50 tOFF - SINGLE SUPPLY 0 5 7 11 9 SUPPLY VOLTAGE - Volts 13 15 Figure 7. Supply Current vs. Input Switching Frequency Figure 8. Switching Time vs. Power Supply -6- REV. A ADG417 Test Circuits IDS V1 S VS RON = V1/IDS D VS VD VS VD IS (OFF) S D ID (OFF) S D ID (ON) Test Circuit 1. On Resistance Test Circuit 2. Off Leakage Test Circuit 3. On Leakage VDD 0.1 F VL 0.1 F 3V VDD S2 VS IN VL D RL 300 VOUT CL 35pF VIN 50% 50% 90% VOUT GND VSS 90% tON 0.1 F VSS tOFF Test Circuit 4. Switching Times VDD 0.1 F VL 0.1 F 3V VDD RL VS IN GND VSS S2 VL D CL 10nF VOUT VOUT QINJ = CL VOUT VOUT VIN 0.1 F VSS Test Circuit 5. Charge Injection VDD 0.1 F VL 0.1 F VDD S VL D VOUT RL 50 IN GND VIN 0.1 F VSS VSS VS Test Circuit 6. Off Isolation REV. A -7- ADG417 OUTLINE DIMENSIONS Dimensions shown in inches and (mm). 8-Lead Plastic DIP (N-8) 0.430 (10.92) 0.348 (8.84) 8 5 PIN 1 1 4 0.280 (7.11) 0.240 (6.10) 0.325 (8.25) 0.300 (7.62) 0.060 (1.52) 0.015 (0.38) 0.130 (3.30) MIN 0.015 (0.381) 0.008 (0.204) 0.195 (4.95) 0.115 (2.93) 0.100 (2.54) BSC 0.210 (5.33) MAX 0.160 (4.06) 0.115 (2.93) 0.022 (0.558) 0.070 (1.77) SEATING 0.014 (0.356) 0.045 (1.15) PLANE 8-Lead SOIC (SO-8) (Narrow Body) 0.1968 (5.00) 0.1890 (4.80) 8 5 4 0.1574 (4.00) 0.1497 (3.80) 1 PIN 1 0.2440 (6.20) 0.2284 (5.80) 0.0500 (1.27) BSC 0.0098 (0.25) 0.0040 (0.10) SEATING PLANE 0.0688 (1.75) 0.0532 (1.35) 0.0192 (0.49) 0.0138 (0.35) 8 0.0098 (0.25) 0 0.0075 (0.19) 0.0196 (0.50) x 45 0.0099 (0.25) 0.0500 (1.27) 0.0160 (0.41) -8- REV. A PRINTED IN U.S.A. C1974a-0-9/98 |
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