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2SC4297
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) sAbsolute maximum ratings (Ta=25C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4297 500 400 10 12(Pulse24) 4 75(Tc=25C) 150 -55 to +150 Unit V V V A A W C C
Application : Switching Regulator and General Purpose External Dimensions FM100(TO3PF)
0.80.2 15.60.2 5.50.2 3.45 0.2 5.5 o3.30.2 1.6
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=500V VEB=10V IC=25mA VCE=4V, IC=7A IC=7A, IB=1.4A IC=7A, IB=1.4A VCE=12V, IE=-1A VCB=10V, f=1MHz
(Ta=25C) 2SC4297 100max 100max 400min 10 to 30 0.5max 1.3max 10typ 105typ V V MHz pF Unit
A
23.00.3
V
9.50.2
A
a b
16.2
1.75 2.15 1.05 +0.2 -0.1 5.450.1 1.5 4.4 5.450.1 1.5 0.65 +0.2 -0.1
3.3
0.8
sTypical Switching Characteristics (Common Emitter)
VCC (V) 200 RL () 28.5 IC (A) 7 VBB1 (V) 10 VBB2 (V) -5 IB1 (A) 0.7 IB2 (A) -1.4 ton (s) 1max tstg (s) 3max tf (s) 0.5max
3.35
B
C
E
Weight : Approx 6.5g a. Type No. b. Lot No.
IC - VCE Characteristics (Typical)
12
VCE(sat),VBE(sat) - IC Temperature Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s at)( V ) Base-Emitter Saturation Voltage V B E (s at)( V) (I C/ IB=5)
I C - V BE Temperature Characteristics (Typical)
12 (VCE=4V)
1A
10 Collector Current I C (A)
80 0m A
60 0m A
10 1
-55C (Case 25C (Cas
125C
Collector Current I C (A)
V B E( sat)
8
400m A
Temp)
8
p)
6
e Temp)
as e 2 5 Temp ) C
(Cas
4
4
(Ca
200mA
IB=100mA
2
12
5
V C E( sat) 0 0.02 0.05 0.1 0.5 1 5
-5
5
C
2
0
0
1
2
3
4
10
0
0
0.2
0.4
0.6
0.8
-55C
C
25C
125
(C
1.0
(Case
C
Temp
e Te
se
Te (Case
mp)
Tem
mp)
6
)
Collector-Emitter Voltage V C E( V)
Collector Current I C( A)
Base-Emittor Voltage V B E( V)
(VCE=4V) 50 8
j - a( C/W)
hFE - IC Characteristics (Typical)
t on*t s t g *t f( s)
5
t on *t stg * t f - I C Characteristics (Typical)
j-a - t Characteristics
2
125C
DC Cur rent Gain h F E
Transient Thermal Resistance
t s tg VCC 200V IC:I B1: -I B 2= 10:1:2 1 0.5 ton
25C
-30C
1
10
Swi tchi ng T im e
0.5
tf 0.1 0.5 1 Collector Current I C( A) 5 10
5 0.02
0.05
0.1
0.5
1
5
10 12
0.1
1
10 Time t(ms)
100
3.0
1.2
1000
Collector Current I C( A)
Safe Operating Area (Single Pulse)
30
10 0 s
Reverse Bias Safe Operating Area
30 80
P c - T a Derating
10 Co lle ctor Cu rre nt I C( A) Collector Curr ent I C (A) 5
10 5
M aximum Power Dissipa ti on P C( W)
60
W ith In fin ite he
40
at si nk
1 0.5
1 0.5 Without Heatsink Natural Cooling L=3mH -IB2=1A Duty:less than 1%
Without Heatsink Natural Cooling
20
0.1 5 10 50 100 500 Collector-Emitter Voltage V C E( V)
0.1 5
10
50
100
500
3.5 0
Without Heatsink 0 50 100 150
Collector-Emitter Voltage V C E( V)
Ambient Temperature Ta(C)
95

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