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| (R) X02xxxA SENSITIVE GATE SCR FEATURES IT(RMS) = 1.25A VDRM = 200V to 800V Low IGT < 200 A K G A DESCRIPTION The X02xxxA series of SCRs uses a high performance TOP GLASS PNPN technology. These parts are intended for general purpose applications where low gate sensitivity is required. TO92 (Plastic) ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) IT(AV) ITSM Parameter RMS on-state current (180 conduction angle) Mean on-state current (180 conduction angle) Non repetitive surge peak on-state current (Tj initial = 25C ) I2t Value for fusing Critical rate of rise of on-state current IG = 10 mA diG /dt = 0.1 A/s. Storage and operating junction temperature range Maximum lead temperature for soldering during 10s at 2mm from case Tl= 60C Tl= 60C tp = 8.3 ms tp = 10 ms tp = 10 ms Value 1.25 0.8 25 22.5 2.5 30 - 40, + 150 - 40, + 125 260 A2s A/s C C Unit A A A I2t dI/dt Tstg Tj Tl Symbol VDRM VRRM January 1995 Parameter B Repetitive peak off-state voltage Tj = 125C RGK = 1K 200 Voltage D 400 M 600 N 800 Unit V 1/5 X02xxxA THERMAL RESISTANCES Symbol Rth(j-a) Rth(j-l) Junction to ambient Junction to leads for DC Parameter Value 150 60 Unit C/W C/W GATE CHARACTERISTICS (maximum values) PG (AV)= 0.2 W PGM = 3 W (tp = 20 s) ELECTRICAL CHARACTERISTICS Symbol IGT Test Conditions 02 VD=12V (DC) RL=140 Tj= 25C MIN MAX VGT VGD VRGM tgd IH IL VTM IDRM IRRM dV/dt tq VD=12V (DC) RL=140 VD=VDRM RL=3.3k RGK = 1 K IRG =10A VD=VDRM ITM= 3 x IT(AV) dIG/dt = 0.1A/s IG = 10mA IT= 50mA RGK = 1 K IG=1mA RGK = 1 K ITM= 2.5A tp= 380s VD = VDRM RGK = 1 K VR = VRRM VD=67%VDRM RGK = 1 K ITM= 3 x IT(AV) VR =35V dI/dt=10A/s tp=100s dV/dt=2V/s VD= 67%VDRM RGK = 1 K Tj= 25C Tj= 125C Tj= 25C Tj= 25C Tj= 25C Tj= 25C Tj= 25C Tj= 25C Tj= 110C Tj= 110C Tj= 110C MAX MIN MIN TYP MAX MAX MAX MAX MAX TYP MAX 15 200 Sensitivity 03 20 200 0.8 0.1 8 0.5 5 6 1.45 5 200 20 100 15 05 20 50 V V V s mA mA V A A V/s s A Unit IGM = 1.2 A (tp = 20 s) ORDERING INFORMATION X SCR TOP GLASS CURRENT 2/5 02 03 SENSITIVITY M A PACKAGE : A = TO92 VOLTAGE (R) X02xxxA Fig.1 : Maximum average power dissipation versus average on-state current. Fig.2 : Correlation between maximum average power dissipation and maximum allowable temperature (Tamb and Tlead). P (W) P (W) Tlead (oC) 1.2 360 O 1.2 Rth(j-l) DC = 180 = 120 = 90 o o o -50 1.0 0.8 0.6 0.4 0.2 0.0 0 = 30 o = 60 o 1.0 -70 0.8 0.6 0.4 0.2 -110 Tamb ( C) o Rth(j-a) -90 I T(AV)(A) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 0.0 0 20 40 60 80 100 120 140 Fig.3 : Average on-state current versus lead temperature. I T(AV) (A) Fig.4 : Relative variation of thermal impedance junction to ambient versus pulse duration. Zth(j-a)/Rth(j-a) 1.00 1.4 1.2 1.0 0.8 = 180 o DC 0.10 0.6 0.4 0.2 0.0 0 Tlead ( C) o tp (s) 10 20 30 40 50 60 70 80 90 100 110 120 130 0.01 1E-3 1E-2 1E-1 1 E+0 1 E+1 1E +2 5 E+2 Fig.5 : Relative variation of gate trigger current and holding current versus junction temperature. Igt[Tj] o Igt[Tj=25 C] Ih[Tj] o Ih[Tj=25 C] Fig.6 : Non repetitive surge peak on-state current versus number of cycles. ITSM(A) 25 Tj initial = 25 C o 10.0 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0.0 -40 -20 Ih Tj(oC) 20 15 Igt 10 5 Number of cycles 20 40 60 80 100 120 140 0 0 1 10 100 100 0 3/5 (R) X02xxxA Fig.7 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : tp 10ms, and corresponding value of I2t. I TSM (A). I2 t (A 2 s) Tj initial = 25oC Fig.8 : On-state characteristics (maximum values). 100 I TM (A) 100 Tj initial o 25 C I TSM 10 Tj max 10 1 I2 t Tj max Vto =1.05V Rt =0.150 tp(ms) VTM (V) 1 1 10 0.1 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 4/5 (R) X02xxxA PACKAGE MECHANICAL DATA TO92 (Plastic) DIMENSIONS Millimeters Inches Typ. a B C REF. A Min. Max. Typ. 0.053 4.7 Min. Max. 0.185 A B C D 1.35 2.54 4.4 12.7 3.7 0.45 4.8 0.100 0.173 0.189 0.500 0.146 0.017 F D E E F a Marking : Type number Weight : 0.2 g Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THO MSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. (c) 1995 SGS-THOMSON Microelectronics - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 5/5 (R) |
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