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| Bulletin I0116J 09/00 IR180DM16CCB SERIES STANDARD RECOVERY DIODES Junction Size: Wafer Size: VRRM Class: Passivation Process: Reference IR Packaged Part: Square 180 mils 4" 1600 V Glassivated MOAT 20ETS Series Major Ratings and Characteristics Parameters VFM VRRM Maximum Forward Voltage Reverse Breakdown Voltage Range Units 1100 mV 1600 V (**) Test Conditions TJ = Amb., I F = 20 A TJ = Amb., I RRM = 100 A (*) (*) Nitrogen flow on die edge. (**)Wafer and die Probe test clamped at 1200V to limit arcing. 1600V BV testable only in encapsulated packages Mechanical Characteristics Nominal Back Metal Composition, Thickness Nominal Front Metal Composition, Thickness Chip Dimensions Wafer Diameter Wafer Thickness Maximum Width of Sawing Line Reject Ink Dot Size Ink Dot Location Recommended Storage Environment Cr - Ni - Ag (1 KA - 4 KA - 6 KA) 100% Al, (20 m) 180 x 180 mils (see drawing) 100 mm, with std. < 110 > flat 330 m, 10 m 45 m 0.25 mm diameter minimum See drawing Storage in original container, in dessicated nitrogen, with no contamination www.irf.com 1 IR180DM16CCB Series Bulletin I0116J 09/00 Ordering Information Table Device Code IR 1 1 2 3 4 5 6 7 International Rectifier Device Chip Dimension in Mils 180 2 D 3 M 4 16 5 C 6 CB 7 Type of Device: D = Wire Bondable Standard Recovery Diode Passivation Process: M = Glassivated MOAT Voltage code: Code x 100 = VRRM Metallization: C = Aluminium (Anode) - Silver (Cathode) CB = Probed Uncut Die (wafer in box) None = Probed Die in chip carrier Outline Table All dimensions are in microns (mils) 2 www.irf.com IR180DM16CCB Series Bulletin I0116J 09/00 Wafer Layout TOP VIEW N 293 Basic Cells All dimensions are in millimeters www.irf.com 3 |
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