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| CEP05P03/CEB05P03 4 Single P-Channel Enhancement Mode MOSFET FEATURES -30V , -4.9A , RDS(ON)=70m @VGS=-10V RDS(ON)=120m @VGS=-4.5V Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 package for through hole. D D G G D S G S S CEP SERIES TO-220 CEB SERIES TO-263(DD-PAK) ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Gurrent-Continuous @TJ=125 C -Pulsed Drain-Source Diode Forward Current Maximum Power Dissipation Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit -30 20 4.9 30 -1.7 50 -55 to 150 Unit V V A A A W C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient R JA 62.5 C/W 4-12 CEP05P03/CEB05P03 ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted) Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS VGS(th) RDS(ON) ID(ON) gFS b Symbol Condition VGS= 0V, ID=-250A VDS=-30V, VGS=0V VGS= 20V, VDS=0V VDS=VGS, ID= -250A VGS=-10V, ID=-4.9A VGS=-4.5V, ID=-2.0A VDS=-5V, VGS=-10V VDS=-15V, ID=-4.9A Min Typ Max Unit -30 -1 V A 100 nA -1 -1.5 42 78 -20 5 1040 420 150 -3 70 120 V m m A S 4 ON CHARACTERISTICS a Gate Threshold Voltage Drain-Source On-State Resistance On-State Drain Current Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS COSS CRSS b PF PF PF VDS = -15V, VGS = 0V f =1.0MHZ SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time Fall time Total Gate Charge Gate-Source Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Qgs Qgd VDD = -15V, ID = -1A, VGEN = -10V, RGEN = 6 8 11 23 14 15 20 40 25 ns ns ns ns nC nC nC 22.5 29 VDS = -15V, ID = -4.9A, VGS = -10V 4-13 2 6 CEP05P03/CEB05P03 ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted) 4 Parameter Diode Forward Voltage Symbol VSD Condition VGS = 0V, Is = -1.7A Min Typ Max Unit -0.79 -1.2 V DRAIN-SOURCE DIODE CHARACTERISTICS a Notes a.Pulse Test:Pulse Width 300 s, Duty Cycle 2%. b.Guaranteed by design, not subject to production testing. -20 -10V -16 -9V VGS=-6V -16 -5V -12 -20 -55 C 25 C Tj=125 C ID, Drain Current(A) ID, Drain Current (A) -2.5 -3.0 -12 -8 -4V -4 -3V 0 0 -0.5 -1.0 -1.5 -2.0 -8 -4 0 0 -1 -1.5 -2.0 -2.5 -3.0 -3.5 VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) Figure 1. Output Characteristics 1500 1250 Figure 2. Transfer Characteristics 0.18 VGS=-10V 0.15 0.12 Tj=125 C 0.09 0.06 0.03 0.00 25 C -55 C Ciss 1000 750 Coss 500 250 0 0 5 10 15 20 25 30 Crss RDS (ON), On-Resistance (Ohms) C, Capacitance (pF) 0 -2.5 -5 -7.5 -10 -VDS, Drain-to Source Voltage (V) ID, Drain Current (A) Figure 3. Capacitance Figure 4. On-Resistance Variation with Drain Current and Temperature 4-14 CEP05P03/CEB05P03 BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 -25 VDS=VGS ID=-250 A 1.15 ID=-250 A 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 4 0 25 50 75 100 125 150 0 25 50 75 100 125 150 Tj, Junction Temperature ( C) Tj, Junction Temperature ( C) Figure 5. Gate Threshold Variation with Temperature 10 Figure 6. Breakdown Voltage Variation with Temperature 20.0 gFS, Transconductance (S) 8 6 4 2 VDS=-15V 0 0 5 10 15 20 -Is, Source-drain current (A) 10.0 VGS=0V 1.0 0.4 0.5 1.0 1.5 2.0 2.5 -IDS, Drain-Source Current (A) -VSD, Body Diode Forward Voltage (V) Figure 7. Transconductance Variation with Drain Current 10 -ID, Drain Current (A) Figure 8. Body Diode Forward Voltage Variation with Source Current 70 VGS, Gate to Source Voltage (V) 8 6 4 2 0 0 VDS=-15V ID=-4.9A 10 0 s 10 RD ON S( )L im it 1m 10 ms s 1 VGS=-10V Single Pulse Tc=25 C DC 3 6 9 12 15 18 21 24 1 10 30 60 Qg, Total Gate Charge (nC) -VDS, Drain-Source Voltage (V) Figure 9. Gate Charge 4-15 Figure 10. Maximum Safe Operating Area CEP05P03/CEB05P03 4 V IN D VGS RGEN G 90% -VDD t on RL VOUT VOUT 10% toff tr 90% td(on) td(off) 90% 10% tf S V 50% 10% 50% INVERTED PULSE WIDTH IN Figure 11. Switching Test Circuit Figure 12. Switching Waveforms 2 r(t),Normalized Effective Transient Thermal Impedance 1 D=0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse 0.01 0.01 PDM t1 t2 1. R JC (t)=r (t) * R JC 2. R JC=See Datasheet 3. TJM-TC = P* R JC (t) 4. Duty Cycle, D=t1/t2 1 10 100 1000 10000 0.1 Square Wave Pulse Duration (msec) Figure 13. Normalized Thermal Transient Impedance Curve 4-16 |
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