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| BCW60, BCX70 NPN Silicon AF Transistors For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW61, BCX71 (PNP) 3 2 1 VPS05161 Type BCW60A BCW60B BCW60C BCW60D BCW60FF BCW60FN BCX70G BCX70H BCX70J BCX70K Marking AAs ABs ACs ADs AFs ANs AGs AHs AJs AKs 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B Pin Configuration 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C Package SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 1 Apr-12-2002 BCW60, BCX70 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Peak base current Total power dissipation, TS = 71 C Junction temperature Storage temperature Symbol VCEO VCBO VEBO IC ICM IBM Ptot Tj Tstg BCW60 32 32 5 BCW60FF BCX70 32 32 5 100 200 200 330 150 -65 ... 150 Unit V 45 45 5 mA mW C Thermal Resistance Junction - soldering point 1) RthJS 240 K/W Unit max. V Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 A, IB = 0 Emitter-base breakdown voltage IE = 1 A, IC = 0 1For calculation of R thJA please refer to Application Note Thermal Resistance typ. V(BR)CEO 32 45 V(BR)CBO 32 45 V(BR)EBO 5 - BCW60/60FF BCX70 BCW60/60FF BCX70 2 Apr-12-2002 BCW60, BCX70 Electrical Characteristics at TA = 25C, unless otherwise specified. Symbol Values Parameter min. AC Characteristics Collector cutoff current VCB = 32 V, IE = 0 VCB = 45 V, IE = 0 Collector cutoff current VCB = 32 V, IE = 0 , TA = 150 C BCW60 / 60FF VCB = 45 V, IE = 0 , TA = 150 C BCX70 Emitter cutoff current VEB = 4 V, IC = 0 DC current gain 1) IC = 10 A, VCE = 5 V hFE-grp. A/ G hFE-grp. B/ H hFE-grp. C/ J/ FF hFE-grp. D/ K/ FN BCW60 /60FF BCX70 Unit max. nA typ. ICBO ICBO IEBO hFE 20 20 40 100 hFE hFE-grp. A/ G hFE-grp. B/ H hFE-grp. C/ J/ FF hFE-grp. D/ K/ FN - 20 20 A 20 20 20 nA - - 140 200 300 460 170 250 350 500 - 220 310 460 630 - DC current gain 1) IC = 2 mA, VCE = 5 V 120 180 250 380 hFE 50 70 90 100 DC current gain 1) IC = 50 mA, VCE = 1 V hFE-grp. A/ G hFE-grp. B/ H hFE-grp. C/ J/ FF hFE-grp. D/ K/ FN 1) Pulse test: t =300s, D = 2% 3 Apr-12-2002 BCW60, BCX70 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter DC Characteristics Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.25 mA IC = 50 mA, IB = 1.25 mA Base-emitter saturation voltage 1) IC = 10 mA, IB = 0.25 mA IC = 50 mA, IB = 1.25 mA Base-emitter voltage 1) IC = 10 A, VCE = 5 V IC = 2 mA, VCE = 5 V IC = 50 mA, VCE = 1 V AC Characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Short-circuit input impedance IC = 2 mA, VCE = 5 V, f = 1 kHz hFE-grp. A/G B/H C / J / FF D / K / FN Symbol min. VCEsat VBEsat VBE(ON) 0.55 - Values typ. max. Unit V 0.12 0.2 0.7 0.83 0.52 0.65 0.78 0.25 0.55 0.85 1.05 0.75 - fT Ccb Ceb h11e - 250 3 8 - MHz pF k 2.7 3.6 4.5 7.5 1.5 2 2 3 10-4 - Open-circuit reverse voltage transf.ratio | hFE-grp. h12e IC = 2 mA, VCE = 5 V, f = 1 kHz A/G B/H C / J/FF D / K / FN 1) Pulse test: t =300s, D = 2% 4 Apr-12-2002 BCW60, BCX70 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values min. AC Characteristics Short-circuit forward current transf.ratio | hFE-grp. h21e IC = 2 mA, VCE = 5 V, f = 1 kHz A/G B/H C / J/ FF D / K / FN Unit max. typ. 200 260 330 520 18 24 30 50 S dB 2 1 2 0.135 V IC = 2 mA, VCE = 5 V, f = 1 kHz A/G B/H C / J / FF D / K / FN F Noise figure IC = 200 A, VCE = 5 V, RS = 2 k, f = 1 kHz, f = 200 Hz hFE-grp. A-K FF - FN hFE-grp. FF / FN Equivalent noise voltage IC = 200 A, VCE = 5 V, RS = 2 k, f = 10 ... 50 Hz Vn 5 Apr-12-2002 Open-circuit output admittance hFE-grp. h22e BCW60, BCX70 Total power dissipation Ptot = f(TS) Collector-base capacitance CCB = f (VCBO) Emitter-base capacitance CEB = f (VEBO) BCW 60/BCX 70 EHP00327 360 mW 300 270 12 CCBO pF (C EBO) 10 P tot 240 210 180 150 120 90 60 30 0 0 15 30 45 60 75 90 105 120 8 CEBO 6 4 CCBO 2 C 150 TS 0 10 -1 10 0 V 10 1 V CBO (V EBO ) Permissible pulse load Ptotmax / PtotDC = f (tp ) 10 3 Ptot max 5 Ptot DC BCW 60/BCX 70 EHP00328 Transition frequency fT = f (IC) VCE = 5V BCW 60/BCX 70 EHP00330 10 3 MHz fT D= tp T tp T 10 2 5 10 1 5 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 5 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s tp 10 0 10 1 10 -1 10 0 10 1 mA 10 2 C 6 Apr-12-2002 BCW60, BCX70 Base-emitter saturation voltage IC = f (VBEsat ), hFE = 40 BCW 60/BCX 70 EHP00331 Collector-emitter saturation voltage IC = f (VCEsat), h FE = 40 10 2 BCW 60/BCX 70 EHP00332 10 2 C mA 100 C 25 C -50 C C mA 100 C 25 C -50 C 10 1 5 10 1 5 10 0 5 10 0 5 10 -1 0 0.2 0.4 0.6 0.8 V V BE sat 1.2 10 -1 0 0.1 0.2 0.3 0.4 V 0.5 V CEsat Collector current IC = f (VBE) VCE = 5V 10 2 BCW 60/BCX 70 EHP00333 DC current gain hFE = f (I C) VCE = 5V 10 3 h FE 5 BCW 60/BCX 70 EHP00334 C mA 100 C 25 C 10 1 5 10 2 5 -50 C 10 0 5 10 1 10 -1 5 100 C 25 C -50 C 5 10 -2 0 0.5 V V BE 1.0 10 0 10 -2 10 -1 10 0 10 1 mA 10 2 C 7 Apr-12-2002 BCW60, BCX70 Collector cutoff current ICBO = f (TA) VCB = VCEmax 10 4 nA BCW 60/BCX 70 EHP00335 h parameter he = f (IC) normalized VCE = 5V 10 2 he 5 BCW 60/BCX 70 EHP00336 CBO 10 3 h 11e 10 2 max 10 5 1 VCE = 5 V h 12e 10 1 10 0 h 21e 10 0 typ 5 h 22e 10 -1 10 -1 10 -1 0 50 100 C TA 150 5 10 0 mA 10 1 C h parameter he = f (VCE ) normalized IC = 2mA BCW 60/BCX 70 EHP00337 Noise figure F = f (V CE) IC = 0.2mA, R S = 2k, f = 1kHz 20 F dB 15 BCW 60/BCX 70 EHP00338 2.0 he 1.5 C = 2 mA h 21e h 11e 1.0 h 12e h 22e 10 0.5 5 0 0 10 20 V VCE 30 0 10 -1 10 0 10 1 V VCE 10 2 8 Apr-12-2002 BCW60, BCX70 Noise figure F = f (f) IC = 0.2mA, VCE = 5V, RS = 2k 20 F dB 15 BCW 60/BCX 70 EHP00339 Noise figure F = f (IC) VCE = 5V, f = 120Hz 20 F dB 15 RS = 1 M 100 k 10 k BCW 60/BCX 70 EHP00340 10 10 500 5 5 1 k 0 10 -2 10 -1 10 0 10 1 kHz 10 2 f 0 10 -3 10 -2 10 -1 10 0 mA 10 1 C Noise figure F = f (IC ) VCE = 5V, f = 1kHz 20 F dB 15 BCW 60/BCX 70 EHP00341 Noise figure F = f (IC) VCE = 5V, f = 10kHz 20 F dB 15 RS = 1 M 100 k BCW 60/BCX 70 EHP00342 R S = 1 M 100 k 10 k 10 1 k 10 500 10 k 5 500 5 1 k 0 10 -3 10 -2 10 -1 10 0 mA 10 1 0 10 -3 10 -2 10 -1 10 0 mA 10 1 C C 9 Apr-12-2002 |
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