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| To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI SEMICONDUCTOR TRIAC BCR8CM Refer to the page 6 as to the product guaranteed maximum junction temperature 150C MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE BCR8CM OUTLINE DRAWING 10.5 MAX Dimensions in mm 4.5 4 16 MAX 3.20.2 1.3 12.5 MIN 3.8 MAX TYPE NAME VOLTAGE CLASS 1.0 0.8 2.5 2.5 7.0 3.60.2 0.5 2.6 123 24 1 2 33 4 Measurement point of case temperature * IT (RMS) ........................................................................ 8A * VDRM ....................................................................... 600V * IFGT !, IRGT !, IRGT # ............................................ 20mA 1 T1 TERMINAL T2 TERMINAL GATE TERMINAL T2 TERMINAL TO-220 APPLICATION Contactless AC switches, light drimmer, electric flasher unit, control of household equipment such as TV sets * stereo * refrigerator * washing machine * infrared kotatsu * carpet * electric fan, solenoid drivers, small motor control, copying machine, electric tool, other general purpose control applications MAXIMUM RATINGS Symbol VDRM VDSM Parameter Repetitive peak off-state voltage 1 Non-repetitive peak off-state voltage 1 Voltage class 12 600 720 Unit V V 4.5 Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj Tstg -- Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Typical value Conditions Commercial frequency, sine full wave 360 conduction, Tc=105C3 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Ratings 8 80 26 5 0.5 10 2 -40 ~ +125 -40 ~ +125 2.0 Unit A A A2s W W V A C C g 1. Gate open. Mar. 2002 MITSUBISHI SEMICONDUCTOR TRIAC BCR8CM Refer to the page 6 as to the product guaranteed maximum junction temperature 150C MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Limits Symbol IDRM VTM VFGT ! VRGT ! VRGT # IFGT ! IRGT ! IRGT # VGD Rth (j-c) (dv/dt)c Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state commutating voltage 5 Parameter Repetitive peak off-state current On-state voltage ! Gate trigger voltage 2 @ # ! Gate trigger current 2 @ # Tj=125C, VD=1/2VDRM Junction to case 3 4 Tj=125C Test conditions Tj=125C, VDRM applied Tc=25C, ITM=12A, Instantaneous measurement Min. -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- Max. 2.0 1.5 1.5 1.5 1.5 20 20 20 -- 2.0 -- Unit mA V V V V mA mA mA V C/ W V/s Tj=25C, VD=6V, RL=6, RG=330 -- -- -- Tj=25C, VD=6V, RL=6, RG=330 -- -- 0.2 -- 10 2. Measurement using the gate trigger characteristics measurement circuit. 3. Case temperature is measured at the T2 terminal 1.5mm away from the molded case. 4. The contact thermal resistance Rth (c-f) in case of greasing is 1.0C/W. 5. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. Test conditions Commutating voltage and current waveforms (inductive load) 1. Junction temperature Tj=125C 2. Rate of decay of on-state commutating current (di/dt)c=-4.0A/ms 3. Peak off-state voltage VD=400V SUPPLY VOLTAGE MAIN CURRENT MAIN VOLTAGE (dv/dt)c (di/dt)c TIME TIME TIME VD PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTICS 102 SURGE ON-STATE CURRENT (A) ON-STATE CURRENT (A) RATED SURGE ON-STATE CURRENT 100 90 80 70 60 50 40 30 20 10 0 100 2 3 4 5 7 101 2 3 4 5 7 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 Tj = 125C Tj = 25C 10-1 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 ON-STATE VOLTAGE (V) CONDUCTION TIME (CYCLES AT 60Hz) Mar. 2002 MITSUBISHI SEMICONDUCTOR TRIAC BCR8CM Refer to the page 6 as to the product guaranteed maximum junction temperature 150C MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE GATE CHARACTERISTICS (, AND ) GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 100 (%) 3 2 VGM = 10V PG(AV) = 0.5W PGM = 5W IGM = 2A GATE VOLTAGE (V) GATE TRIGGER CURRENT (Tj = tC) GATE TRIGGER CURRENT (Tj = 25C) 101 7 5 3 2 100 7 5 3 2 VGT = 1.5V 103 7 5 4 3 2 102 7 5 4 3 2 TYPICAL EXAMPLE IRGT III IRGT I IFGT I IFGT I IRGT I, IRGT III 10-1 VGD = 0.2V 7 5 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 GATE CURRENT (mA) 101 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) 102 2 3 5 7 103 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) 100 (%) TYPICAL EXAMPLE GATE TRIGGER VOLTAGE (Tj = tC) GATE TRIGGER VOLTAGE (Tj = 25C) 102 7 5 4 3 2 101 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) TRANSIENT THERMAL IMPEDANCE (C/W) 103 7 5 4 3 2 MAXIMUM ON-STATE POWER DISSIPATION ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT 160 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE ON-STATE POWER DISSIPATION (W) 16 12 360 CONDUCTION 10 RESISTIVE, INDUCTIVE 8 LOADS 6 4 2 0 0 2 4 6 8 10 12 14 16 CASE TEMPERATURE (C) 14 140 120 100 80 60 360 40 CONDUCTION RESISTIVE, 20 INDUCTIVE LOADS 0 0 2 4 6 8 10 12 14 16 RMS ON-STATE CURRENT (A) RMS ON-STATE CURRENT (A) Mar. 2002 MITSUBISHI SEMICONDUCTOR TRIAC BCR8CM Refer to the page 6 as to the product guaranteed maximum junction temperature 150C MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE AMBIENT TEMPERATURE (C) 100 80 60 RESISTIVE, 40 INDUCTIVE LOADS 20 NATURAL CONVECTION 0 0 2 4 6 120 120 t2.3 100 100 t2.3 60 60 t2.3 AMBIENT TEMPERATURE (C) ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 ALL FINS ARE BLACK PAINTED ALUMINUM AND GREASED 140 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 120 ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 NATURAL CONVECTION NO FINS 140 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 120 RESISTIVE, INDUCTIVE LOADS 100 80 60 40 20 0 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 RMS ON-STATE CURRENT (A) 8 10 12 14 16 RMS ON-STATE CURRENT (A) 100 (%) REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE 105 7 TYPICAL EXAMPLE 5 3 2 104 7 5 3 2 103 7 5 3 2 102 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) 103 7 5 4 3 2 102 7 5 4 3 2 100 (%) HOLDING CURRENT VS. JUNCTION TEMPERATURE TYPICAL EXAMPLE REPETITIVE PEAK OFF-STATE CURRENT (Tj = tC) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25C) HOLDING CURRENT (Tj = tC) HOLDING CURRENT (Tj = 25C) 101 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) LACHING CURRENT VS. JUNCTION TEMPERATURE 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 -40 100 (%) BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE 160 TYPICAL EXAMPLE 140 120 100 80 60 40 20 0 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) Mar. 2002 LACHING CURRENT (mA) DISTRIBUTION T2 , G TYPICAL - T2 , G- EXAMPLE + + 0 40 80 120 160 JUNCTION TEMPERATURE (C) BREAKOVER VOLTAGE (Tj = tC) BREAKOVER VOLTAGE (Tj = 25C) + T2 , G- TYPICAL EXAMPLE MITSUBISHI SEMICONDUCTOR TRIAC BCR8CM Refer to the page 6 as to the product guaranteed maximum junction temperature 150C MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE 100 (%) CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/s) BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE 160 140 TYPICAL EXAMPLE Tj = 125C COMMUTATION CHARACTERISTICS 7 5 3 2 SUPPLY VOLTAGE MAIN CURRENT MAIN VOLTAGE (dv/dt)c TIME (di/dt)c TIME TIME VD BREAKOVER VOLTAGE (dv/dt = xV/s ) BREAKOVER VOLTAGE (dv/dt = 1V/s ) 120 100 80 60 40 20 I QUADRANT III QUADRANT 101 7 5 MINIMUM CHARAC3 TERISTICS 2 VALUE 100 7 100 III QUADRANT 23 5 7 101 TYPICAL EXAMPLE Tj = 125C IT = 4A = 500s VD = 200V f = 3Hz I QUADRANT 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 RATE OF RISE OF OFF-STATE VOLTAGE (V/s) 23 5 7 102 RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A /ms) GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 103 7 5 4 3 2 102 7 5 4 3 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 100 (%) GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6 6 TYPICAL EXAMPLE IFGT I IRGT I IRGT III 6V V A RG 6V V A RG GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) TEST PROCEDURE 1 6 TEST PROCEDURE 2 6V V A RG GATE CURRENT PULSE WIDTH (s) TEST PROCEDURE 3 Mar. 2002 MITSUBISHI SEMICONDUCTOR TRIAC BCR8CM The product guaranteed maximum junction temperature 150C (See warning.) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE BCR8CM OUTLINE DRAWING 10.5 MAX Dimensions in mm 4.5 4 16 MAX 3.20.2 1.3 12.5 MIN 3.8 MAX TYPE NAME VOLTAGE CLASS 1.0 0.8 2.5 2.5 7.0 3.60.2 0.5 2.6 123 24 1 2 33 4 Measurement point of case temperature * IT (RMS) ........................................................................ 8A * VDRM ....................................................................... 600V * IFGT !, IRGT !, IRGT # ............................................ 20mA 1 T1 TERMINAL T2 TERMINAL GATE TERMINAL T2 TERMINAL TO-220 APPLICATION Contactless AC switches, light drimmer, electric flasher unit, control of household equipment such as TV sets * stereo * refrigerator * washing machine * infrared kotatsu * carpet * electric fan, solenoid drivers, small motor control, copying machine, electric tool, other general purpose control applications (Warning) 1. Refer to the recommended circuit values around the triac before using. 2. Be sure to exchange the specification before using. If not exchanged, general triacs will be supplied. MAXIMUM RATINGS Symbol VDRM VDSM Parameter Repetitive peak off-state voltage 1 Non-repetitive peak off-state voltage 1 Voltage class 12 600 720 Unit V V 4.5 Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj Tstg -- Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Typical value Conditions Commercial frequency, sine full wave 360 conduction, Tc=130C3 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Ratings 8 80 26 5 0.5 10 2 -40 ~ +150 -40 ~ +150 2.0 Unit A A A2s W W V A C C g 1. Gate open. Mar. 2002 MITSUBISHI SEMICONDUCTOR TRIAC BCR8CM The product guaranteed maximum junction temperature 150C (See warning.) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Limits Symbol IDRM VTM VFGT ! VRGT ! VRGT # IFGT ! IRGT ! IRGT # VGD Rth (j-c) (dv/dt)c Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state commutating voltage 5 Parameter Repetitive peak off-state current On-state voltage ! Gate trigger voltage 2 @ # ! Gate trigger current 2 @ # Test conditions Tj=150C, VDRM applied Tc=25C, ITM=12A, Instantaneous measurement Min. -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- Max. 2.0 1.5 1.5 1.5 1.5 20 20 20 -- 2.0 -- Unit mA V V V V mA mA mA V C/ W V/s Tj=25C, VD=6V, RL=6, RG=330 -- -- -- Tj=25C, VD=6V, RL=6, RG=330 -- -- Tj=125C/150C, VD=1/2VDRM Junction to case 3 4 Tj=125C/150C 0.2/0.1 -- 10/1 2. Measurement using the gate trigger characteristics measurement circuit. 3. Case temperature is measured at the T2 terminal 1.5mm away from the molded case. 4. The contact thermal resistance Rth (c-f) in case of greasing is 1.0C/W. 5. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. Test conditions Commutating voltage and current waveforms (inductive load) 1. Junction temperature Tj=125C/150C 2. Rate of decay of on-state commutating current (di/dt)c=-4.0A/ms 3. Peak off-state voltage VD=400V SUPPLY VOLTAGE MAIN CURRENT MAIN VOLTAGE (dv/dt)c (di/dt)c TIME TIME TIME VD PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTICS 102 100 7 5 3 2 RATED SURGE ON-STATE CURRENT SURGE ON-STATE CURRENT (A) 90 80 70 60 50 40 30 20 10 0 100 2 3 4 5 7 101 2 3 4 5 7 102 ON-STATE CURRENT (A) Tj = 150C 101 7 5 3 2 100 7 5 Tj = 25C 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.5 ON-STATE VOLTAGE (V) CONDUCTION TIME (CYCLES AT 60Hz) Mar. 2002 MITSUBISHI SEMICONDUCTOR TRIAC BCR8CM The product guaranteed maximum junction temperature 150C (See warning.) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE GATE CHARACTERISTICS (, AND ) 100 (%) GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 103 7 5 4 3 2 102 7 5 4 3 2 TYPICAL EXAMPLE 3 2 GATE VOLTAGE (V) VGM = 10V PG(AV) = 0.5W PGM = 5W GATE TRIGGER CURRENT (Tj = tC) GATE TRIGGER CURRENT (Tj = 25C) 101 7 5 3 2 100 7 5 3 2 IGM = 2A VGT = 1.5V IRGT III IFGT I, IRGT I 10-1 7 IFGT I IRGT I, IRGT III VGD = 0.1V 5 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 GATE CURRENT (mA) 101 -60 -40 -20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (C) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 100 (%) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) 102 2 3 5 7 103 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) TRANSIENT THERMAL IMPEDANCE (C/W) GATE TRIGGER VOLTAGE (Tj = tC) GATE TRIGGER VOLTAGE (Tj = 25C) 103 7 5 4 3 2 102 7 5 4 3 2 TYPICAL EXAMPLE 101 -60 -40 -20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (C) MAXIMUM ON-STATE POWER DISSIPATION ON-STATE POWER DISSIPATION (W) ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT 160 CASE TEMPERATURE (C) 16 14 12 360 CONDUCTION 10 RESISTIVE, INDUCTIVE 8 LOADS 6 4 2 0 0 2 4 6 8 10 12 14 16 140 120 100 80 60 360 40 CONDUCTION RESISTIVE, 20 INDUCTIVE LOADS 0 0 2 4 6 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 8 10 12 14 16 RMS ON-STATE CURRENT (A) RMS ON-STATE CURRENT (A) Mar. 2002 MITSUBISHI SEMICONDUCTOR TRIAC BCR8CM The product guaranteed maximum junction temperature 150C (See warning.) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE AMBIENT TEMPERATURE (C) 120 120 120 t2.3 100 80 APPLY CURVES 100 100 t2.3 60 60 t2.3 AMBIENT TEMPERATURE (C) ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 ALL FINS ARE BLACK PAINTED ALUMINUM AND GREASED 140 ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 NATURAL CONVECTION 140 NO FINS,CURVES APPLY REGARDLESS 120 OF CONDUCTION ANGLE RESISTIVE, INDUCTIVE 100 LOADS 80 60 40 20 0 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 RMS ON-STATE CURRENT (A) REGARDLESS 60 OF CONDUCTION ANGLE 40 RESISTIVE, INDUCTIVE 20 LOADS NATURAL CONVECTION 0 0 2 4 6 8 10 12 14 16 RMS ON-STATE CURRENT (A) 100 (%) REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 HOLDING CURRENT VS. JUNCTION TEMPERATURE 100 (%) 103 7 5 4 3 2 106 REPETITIVE PEAK OFF-STATE CURRENT (Tj = tC) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25C) TYPICAL EXAMPLE TYPICAL EXAMPLE 104 HOLDING CURRENT (Tj = tC) HOLDING CURRENT (Tj = 25C) JUNCTION TEMPERATURE (C) 105 102 7 5 4 3 2 103 102 -60 -40 -20 0 20 40 60 80 100 120 140 160 101 -60 -40 -20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (C) LACHING CURRENT VS. JUNCTION TEMPERATURE 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 -40 100 (%) 160 BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE TYPICAL EXAMPLE 140 120 100 80 60 40 20 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (C) Mar. 2002 LACHING CURRENT (mA) DISTRIBUTION T2 , G TYPICAL - T2 , G- EXAMPLE + + 0 40 80 120 160 JUNCTION TEMPERATURE (C) BREAKOVER VOLTAGE (Tj = tC) BREAKOVER VOLTAGE (Tj = 25C) T2 , G TYPICAL EXAMPLE + - MITSUBISHI SEMICONDUCTOR TRIAC BCR8CM The product guaranteed maximum junction temperature 150C (See warning.) BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE (Tj = 125C) 160 140 TYPICAL EXAMPLE Tj = 125C MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE (Tj = 150C) 160 140 TYPICAL EXAMPLE Tj = 150C 100 (%) BREAKOVER VOLTAGE (dv/dt = xV/s ) BREAKOVER VOLTAGE (dv/dt = 1V/s ) 120 100 80 60 40 20 I QUADRANT III QUADRANT BREAKOVER VOLTAGE (dv/dt = xV/s ) BREAKOVER VOLTAGE (dv/dt = 1V/s ) 100 (%) 120 100 80 60 40 20 III QUADRANT 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 RATE OF RISE OF OFF-STATE VOLTAGE (V/s) I QUADRANT 0 1 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 10 RATE OF RISE OF OFF-STATE VOLTAGE (V/s) COMMUTATION CHARACTERISTICS (Tj = 125C) COMMUTATION CHARACTERISTICS (Tj = 150C) CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/s) 7 5 3 2 CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/s) SUPPLY VOLTAGE MAIN CURRENT MAIN VOLTAGE (dv/dt)c TIME (di/dt)c TIME TIME VD 101 7 5 MINIMUM CHARAC3 TERISTICS 2 VALUE III QUADRANT 100 70 10 5 7 101 TYPICAL EXAMPLE Tj = 125C IT = 4A = 500s VD = 200V f = 3Hz I QUADRANT 7 5 3 2 101 7 5 3 2 SUPPLY VOLTAGE MAIN CURRENT MAIN VOLTAGE (dv/dt)c TIME (di/dt)c TIME TIME VD III QUADRANT TYPICAL EXAMPLE Tj = 150C IT = 4A = 500s VD = 200V f = 3Hz I QUADRANT MINIMUM CHARACTERISTICS VALUE 23 5 7 101 23 5 7 102 23 23 5 7 102 100 70 10 RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A /ms) RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A /ms) GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 103 7 5 4 3 2 102 7 5 4 3 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 100 (%) TYPICAL EXAMPLE IFGT I IRGT I IRGT III GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) GATE CURRENT PULSE WIDTH (s) Mar. 2002 MITSUBISHI SEMICONDUCTOR TRIAC BCR8CM The product guaranteed maximum junction temperature 150C (See warning.) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6 6 RECOMMENDED CIRCUIT VALUES AROUND THE TRIAC LOAD 6V V A RG 6V V A RG C1 R1 C1 = 0.1~0.47F R1 = 47~100 C0 R0 C0 = 0.1F R0 = 100 TEST PROCEDURE 1 6 TEST PROCEDURE 2 6V V A RG TEST PROCEDURE 3 Mar. 2002 |
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