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MOTOROLA
SEMICONDUCTOR
TECHNICAL DATA
Temperature-Compensated Zener Reference Diodes
Temperature-compensated zener reference diodes utilizing a single chip oxide passivated junction for long-term voltage stability. A rugged, glass-enclosed, hermetically sealed structure. Mechanical Characteristics: CASE: Hermetically sealed, all-glass DIMENSIONS: See outline drawing. FINISH: All external surfaces are corrosion resistant and leads are readily solderable. POLARITY: Cathode indicated by polarity band. WEIGHT: 0.2 Gram (approx.) MOUNTING POSITION: Any Maximum Ratings Junction Temperature: - 55 to +175C Storage Temperature: - 65 to +175C DC Power Dissipation: 400 mW @ TA = 50C WAFER FAB LOCATION: Phoenix, Arizona ASSEMBLY/TEST LOCATION: Phoenix, Arizona
1N821,A 1N823,A 1N825,A 1N827,A 1N829,A
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW
CASE 299 DO-204AH GLASS
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted. VZ = 6.2 V 5%* @ IZT = 7.5 mA) (Note 5)
Maximum Voltage Change VZ (Volts) (Note 1) Ambient Test Temperature C 1C Temperature Coefficient For Reference Only %/C (Note 1) Maximum Dynamic Impedance ZZT Ohms (Note 2)
JEDEC Type No.
1N821 1N823 1N825
1N827 1N829
0.096 0.048 0.019
0.009 0.005
- 55, 0, +25, +75, +100
0.01 0.005 0.002
0.001 0.0005
15
1N821A 1N823A 1N825A
1N827A 1N829A
0.096 0.048 0.019
0.009 0.005
0.01 0.005 0.002
0.001 0.0005
10
*Tighter-tolerance units available on special request.
Motorola TVS/Zener Device Data
6.2 Volt OTC 400 mW DO-35 Data Sheet 8-1
1N821,A 1N823,A 1N825,A 1N827,A 1N829,A
MAXIMUM VOLTAGE CHANGE versus AMBIENT TEMPERATURE
(with IZT = 7.5 mA 0.01 mA) (See Note 3) 1N821 through 1N829
25 1N821,A 20 15 1N823,A 10 25 1N825,A 1N827,A 0 1N829,A 1N827,A -25 -50 VZ = -31 mV 1N825,A -10 1N823,A -15 -20 1N821,A -10 -55 0 0 50 100 1N821,A -25 -55 TA, AMBIENT TEMPERATURE (C) 1N825,A 1N823,A 0 50 100 5 0 -5 1N829,A 1N827,A 1N827,A 1N829,A 1N823,A 1N825,A
100 IZT = 7.5 mA 75 VZ , MAXIMUM VOLTAGE CHANGE (mV) (Referenced to -55C) 50 VZ = +31 mV 1N821,A
-75
Figure 1a
Figure 1b
ZENER CURRENT versus MAXIMUM VOLTAGE CHANGE
(At Specified Temperatures) (See Note 4) MORE THAN 95% OF THE UNITS ARE IN THE RANGES INDICATED BY THE CURVES.
10 9 I Z , ZENER CURRENT (mA)
-55C
10 +100C 9 +25C I Z , ZENER CURRENT (mA) 8 7.5 7 6 +100C 5
+25C -55C IZT
+100C
8 7.5 7 6 +100C 5 4 -75
IZT
+25C -55C
+25C -55C
-50
-25
0
25
50
4 -75
-50
-25
0
25
50
VZ, MAXIMUM VOLTAGE CHANGE (mV) (Referenced to IZT = 7.5 mA)
VZ, MAXIMUM VOLTAGE CHANGE (mV) (Referenced to IZT = 7.5 mA)
Figure 2. 1N821 Series
Figure 3. 1N821A Series
Devices listed in bold, italic are Motorola preferred devices.
6.2 Volt OTC 400 mW DO-35 Data Sheet 8-2
Motorola TVS/Zener Device Data
1N821,A 1N823,A 1N825,A 1N827,A 1N829,A
MAXIMUM ZENER IMPEDANCE versus ZENER CURRENT
(See Note 2) MORE THAN 95% OF THE UNITS ARE IN THE RANGES INDICATED BY THE CURVES.
ZZ , MAXIMUM ZENER IMPEDANCE (OHMS)
1000 800 600 400 200 100 80 60 40 20 10 8 6 4 2 1 1 2 4 6 8 10 20 40 60 80 100 IZ, ZENER CURRENT (mA) 100C 25C -55C
ZZ , MAXIMUM ZENER IMPEDANCE (OHMS)
1000 800 600 400 200 100 80 60 40 20 10 8 6 4 2 1 1 2 4 6 8 10 20 40 60 80 100 IZ, ZENER CURRENT (mA) -55C 25C 100C
Figure 4. 1N821 Series
Figure 5. 1N821A Series
NOTE 1. VOLTAGE VARIATION (VZ) AND TEMPERATURE COEFFICIENT All reference diodes are characterized by the "box method." This guarantees a maximum voltage variation (VZ) over the specified temperature range, at the specified test current (IZT), verified by tests at indicated temperature points within the range. VZ is measured and recorded at each temperature specified. The VZ between the highest and lowest values must not exceed the maximum VZ given. This method of indicating voltage stability is now used for JEDEC registration as well as for military qualification. The former method of indicating voltage stability -- by means of temperature coefficient accurately reflects the voltage deviation at the temperature extremes, but is not necessarily accurate within the temperature range because reference diodes have a nonlinear temperature relationship. The temperature coefficient, therefore, is given only as a reference.
NOTE 3. These graphs can be used to determine the maximum voltage change of any device in the series over any specific temperature range. For example, a temperature change from 0 to +50C will cause a voltage change no greater than +31 mV or - 31 mV for 1N821 or 1N821A, as illustrated by the dashed lines in Figure 1. The boundaries given are maximum values. For greater resolution, an expanded view of the center area in Figure 1a is shown in Figure 1b. NOTE 4. The maximum voltage change, VZ, Figures 2 and 3 is due entirely to the impedance of the device. If both temperature and IZT are varied, then the total voltage change may be obtained by graphically adding VZ in Figure 2 or 3 to the VZ in Figure 1 for the device under consideration. If the device is to be operated at some stable current other than the specified test current, a new set of characteristics may be plotted by superimposing the data in Figure 2 or 3 on Figure 1. For a more detailed explanation see application note in later section. NOTE 5. Zener voltage limits at 25C measured with the test current (IZT) applied with the device junction in thermal equilibrium at an ambient temperature of 25C.
NOTE 2. The dynamic zener impedance, ZZT, is derived from the 60 Hz ac voltage drop which results when an ac current with an rms value equal to 10% of the dc zener current, IZT, is superimposed on IZT. Curves showing the variation of zener impedance with zener current for each series are given in Figures 4 and 5.
Motorola TVS/Zener Device Data
6.2 Volt OTC 400 mW DO-35 Data Sheet 8-3

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