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PD - 95810
AUTOMOTIVE MOSFET
IRFP1405
HEXFET(R) Power MOSFET
D
Features

Advanced Process Technology Ultra Low On-Resistance 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
VDSS = 55V
G S
RDS(on) = 5.3m ID = 95A
Description
Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
D G TO-247AC
S
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C ID @ TC = 25C IDM PD @TC = 25C VGS EAS (Thermally limited) EAS (Tested ) IAR EAR TJ TSTG Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current
Max.
160 110 95 640 310 2.0 20 530 1060 See Fig.12a, 12b, 15, 16 -55 to + 175
Units
A
Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energyd Single Pulse Avalanche Energy Tested Value Avalanche CurrentA Repetitive Avalanche Energy
W W/C V mJ A mJ C
h
g
Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw
300 (1.6mm from case ) 10 lbfyin (1.1Nym)
Thermal Resistance
Parameter
RJC Rcs RJA Junction-to-Case * Case-to-Sink, Flat, Greased Surface Junction-to-Ambient *
Typ.
--- 0.24 ---
Max.
0.49 --- 40
Units
C/W
HEXFET(R) is a registered trademark of International Rectifier.
* R is measured at TJ approximately 90C
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1
12/22/03
IRFP1405
V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Coss Coss Coss eff.
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance
Min. Typ. Max. Units
55 --- --- 2.0 77 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- 0.058 4.2 --- --- --- --- --- --- 120 30 53 12 160 140 150 5.0 13 5600 1310 350 6550 920 1750 --- --- 5.3 4.0 --- 20 250 200 -200 180 --- --- --- --- --- --- --- nH --- --- --- --- --- --- --- pF ns nC nA V
Conditions
VGS = 0V, ID = 250A
V/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 95A
e
V S A
VDS = VGS, ID = 250A VDS = 25V, ID = 95A VDS = 55V, VGS = 0V VDS = 55V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V ID = 95A VDS = 44V VGS = 10V VDD = 28V ID = 95A RG = 2.6 VGS = 10V
e e
D G S
Between lead, 6mm (0.25in.) from package and center of die contact VGS = 0V VDS = 25V = 1.0MHz
VGS = 0V, VDS = 1.0V, = 1.0MHz VGS = 0V, VDS = 44V, = 1.0MHz VGS = 0V, VDS = 0V to 44V
f
Source-Drain Ratings and Characteristics
Parameter
IS ISM VSD trr Qrr ton
Notes:
Min. Typ. Max. Units
--- --- --- --- --- --- --- --- 70 170 95 A 640 1.3 110 260 V ns nC
Conditions
MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 95A, VGS = 0V TJ = 25C, IF = 95A, VDD = 28V di/dt = 100A/s
Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Coss eff. is a fixed capacitance that gives the same charging time max. junction temperature. (See fig. 11). as Coss while VDS is rising from 0 to 80% VDSS . Limited by TJmax, starting TJ = 25C, L = 0.12mH Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive R G = 25, IAS = 95A, VGS =10V. Part not avalanche performance. recommended for use above this value. This value determined from sample failure population. 100% Pulse width 1.0ms; duty cycle 2%. tested to this value in production. Repetitive rating; pulse width limited by
2
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IRFP1405
1000
TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V
1000
TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
BOTTOM
100
10
4.5V
4.5V
60s PULSE WIDTH Tj = 25C
1 0.1 1 10 100
10 0.1 0 1 1
60s PULSE WIDTH Tj = 175C
10 10 100 100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
140
Gfs, Forward Transconductance (S)
ID, Drain-to-Source Current ()
T J = 25C T J = 175C
120 100 80
T J = 25C
100
T J = 175C 60 40 20 0 0 20 40 60 80 100 ID, Drain-to-Source Current (A) VDS = 10V 380s PULSE WIDTH
VDS = 25V 60s PULSE WIDTH
10 4.0 5.0 6.0 7.0 8.0 9.0 10.0
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance Vs. Drain Current
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IRFP1405
10000 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd
20 ID= 95A
VGS, Gate-to-Source Voltage (V)
8000
16
VDS= 44V VDS= 28V
C, Capacitance (pF)
6000
Ciss
12
4000
8
Coss
2000
4
FOR TEST CIRCUIT SEE FIGURE 13
Crss
0 1 10 100
0 0 40 80 120 160 200 QG Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000.0
10000 OPERATION IN THIS AREA LIMITED BY R DS(on)
ISD, Reverse Drain Current (A)
ID, Drain-to-Source Current (A)
100.0
T J = 175C
1000
100
100sec
10.0 T J = 25C 1.0 VGS = 0V 0.1 0.2 0.6 1.0 1.4 1.8 2.2 VSD, Source-toDrain Voltage (V)
10
1
Tc = 25C Tj = 175C Single Pulse 1 10
1msec 10msec DC 100 1000
0.1 VDS , Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRFP1405
200 LIMITED BY PACKAGE
RDS(on) , Drain-to-Source On Resistance (Normalized)
2.5
ID = 95A VGS = 10V
2.0
ID , Drain Current (A)
150
100
1.5
50
1.0
0 25 50 75 100 125 150 175 T C , Case Temperature (C)
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
T J , Junction Temperature (C)
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10. Normalized On-Resistance Vs. Temperature
1
D = 0.50
Thermal Response ( Z thJC )
0.1
0.20 0.10 0.05
R1 R1 J 1 2 R2 R2 C 1 2
0.01
0.02 0.01
J
Ri (C/W) i (sec) 0.2529 0.00080 0.2368 0.014283
0.001
Ci= i/Ri Ci i/Ri
SINGLE PULSE ( THERMAL RESPONSE )
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.0001 0.001 0.01 0.1
0.0001 1E-006 1E-005
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFP1405
EAS, Single Pulse Avalanche Energy (mJ)
15V
2000
VDS
L
DRIVER
1500
ID 16A 20A BOTTOM 95A
TOP
RG
20V VGS
D.U.T
IAS tp
+ V - DD
A
1000
0.01
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS tp
500
0 25 50 75 100 125 150 175
Starting T J, Junction Temperature (C)
I AS
Fig 12b. Unclamped Inductive Waveforms
QG
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
10 V
QGS VG QGD
VGS(th) Gate threshold Voltage (V)
4.0
3.5
Charge
3.0
Fig 13a. Basic Gate Charge Waveform
ID = 250A
2.5
L VCC
0
2.0
DUT
1.5
1K
-75 -50 -25
0
25
50
75
100 125 150 175
T J , Temperature ( C )
Fig 13b. Gate Charge Test Circuit
Fig 14. Threshold Voltage Vs. Temperature
6
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IRFP1405
10000
Avalanche Current (A)
1000
Duty Cycle = Single Pulse
100
0.01 0.05
Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25C due to avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax
10
0.10
1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current Vs.Pulsewidth
600
EAR , Avalanche Energy (mJ)
500
TOP Single Pulse BOTTOM 1% Duty Cycle ID = 95A
400
300
200
100
0 25 50 75 100 125 150
Starting T J , Junction Temperature (C)
Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. I av = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 15, 16). tav = Average time in avalanche. 175 D = Duty cycle in avalanche = tav *f ZthJC(D, tav ) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav
Fig 16. Maximum Avalanche Energy Vs. Temperature
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IRFP1405
Driver Gate Drive
D.U.T
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
-
+
RG
* * * * dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test
VDD
VDD
+ -
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs
RD
V DS VGS RG 10V
Pulse Width 1 s Duty Factor 0.1 %
D.U.T.
+
-VDD
Fig 18a. Switching Time Test Circuit
VDS 90%
10% VGS
td(on) tr t d(off) tf
Fig 18b. Switching Time Waveforms
8
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IRFP1405
TO-247AC Package Outline
Dimensions are shown in millimeters
9SB ) A I
TO-247AC Part Marking Information
EXAMPLE: THIS IS AN IRFPE30 WITH ASS EMBLY LOT CODE 3A1Q INTERNAT IONAL RECTIFIER LOGO AS S EMBLY LOT CODE
Notes: T his part marking information applies to devices produced before 02/26/2001 or for parts manufactured in GB.
PART NUMBER
IRF PE30
3A1Q
9302
DATE CODE (YYWW) YY = YEAR WW = WEEK
Notes : T his part marking information applies to devices produced after 02/26/2001
EXAMPLE: THIS IS AN IRFPE30 WITH ASS EMBLY LOT CODE 5657 AS SEMBLED ON WW 35, 2000 IN T HE AS S EMBLY LINE "H" PART NUMBER
IRFPE 30
56 035H 57
INTERNATIONAL RECTIFIER LOGO AS SEMB LY LOT CODE
DATE CODE YEAR 0 = 2000 WEEK 35 LINE H
TO-247AC packages are not recommended for Surface Mount Application. Data and specifications subject to change without notice. This product has been designed and qualified for Automotive [Q101] market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.12/03
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