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| GT40Q321 TOSHIBA Injection Enhanced Gate Transistor Silicon N Channel IEGT GT40Q321 Voltage Resonance Inverter Switching Application * * * * * The 5th generation Enhancement-mode High speed : tf = 0.41 s (typ.) (IC = 40A) Low saturation voltage: VCE (sat) = 2.8 V (typ.) (IC = 40A) FRD included between emitter and collector Unit: mm Maximum Ratings (Ta = 25C) Characteristics Collector-emitter voltage Gate-emitter voltage Continuous collector current Pulsed collector current Diode forward current Collector power dissipation Junction temperature Storage temperature range DC Pulsed @ Tc = 100C @ Tc = 25C @ Tc = 100C @ Tc = 25C Symbol VCES VGES IC ICP IF IFP PC Tj Tstg Rating 1200 25 23 42 80 10 80 68 170 150 -55 to 150 Unit V V A A A W W C C JEDEC JEITA TOSHIBA 2-16C1C Weight: 4.6 g (typ.) Thermal Characteristics Characteristics Thermal resistance (IGBT) Thermal resistance (diode) Symbol Rth (j-c) Rth (j-c) Max 0.74 1.79 Unit C/W C/W Equivalent Circuit Collector Gate Emitter 1 2003-02-05 GT40Q321 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Switching time Turn-on time Fall time Turn-off time Diode forward voltage Reverse recovery time Symbol IGES ICES VGE (OFF) VCE (sat) Cies tr ton tf toff VF trr IF = 10 A, VGE = 0 IF = 10 A, di/dt = -20 A/s Test Condition VGE = 25 V, VCE = 0 VCE = 1200 V, VGE = 0 IC = 40 mA, VCE = 5 V IC = 40 A, VGE = 15 V VCE = 10 V, VGE = 0, f = 1 MHz Resistive Load VCC = 600 V, IC = 40 A VGG = 15 V, RG = 39 W (Note 1) Min 4.0 Typ. 2.8 3200 0.19 0.25 0.41 0.57 0.6 Max 500 5.0 7.0 3.6 0.72 2.0 V s s Unit nA mA V V pF Note 1: Switching time measurement circuit and input/output waveforms VGE 0 RG 0 VCC 0 VCE td (off) RL IC 90% 90% 10% 90% 10% tf toff 10% tr ton General Safety Precautions and Usage Considerations * * The GT40Q321 is only intended for single-transistor voltage resonant circuits in induction heating (IH) equipment. For other applications, please contact your nearest Toshiba sales office. Do not use devices under conditions in which their maximum ratings will be exceeded. A device may break down or its performance may be degraded, causing it to catch fire or explode resulting in injury to the user. It is therefore necessary to incorporate device derating into circuit design. In all IGBT devices, maximum collector-emitter voltage (VCES) decreases when the junction temperature becomes low. It is therefore necessary to incorporate device derating into circuit design. Maximum collector current is calculated from Tj MAX.(150C), the thermal resistance and DC forward power dissipation. However it's limited in real application by another factors such as switching loss, limitation of the inner bonding wires and so on. * * 2 2003-02-05 GT40Q321 IC - VCE 80 VCE - VGE 10 20 15 (V) Common emitter Tc = 25C 12 Common emitter Tc = -40C 8 (A) 60 10 IC Collector-emitter voltage VCE 6 80 4 20 40 IC = 10 A Collector current 40 20 VGE = 8 V 2 0 0 1 2 3 4 5 0 0 5 10 15 20 25 Collector-emitter voltage VCE (V) Gate-emitter voltage VGE (V) VCE - VGE 10 Common emitter 10 VCE - VGE Common emitter (V) Tc = 25C 8 (V) Tc = 125C 8 VCE Collector-emitter voltage 6 80 4 40 IC = 10 A 20 Collector-emitter voltage VCE 6 80 4 20 2 IC = 10 A 40 2 0 0 5 10 15 20 25 0 0 5 10 15 20 25 Gate-emitter voltage VGE (V) Gate-emitter voltage VGE (V) IC - VGE 80 Common emitter VCE = 5 V 6 Common emitter VGE = 15 V 5 VCE (sat) - Tc Collector-emitter saturation voltage VCE (sat) (V) (A) 80 60 IC 4 40 3 20 2 IC = 10 A 1 Collector current 40 20 25 Tc = 125C 0 0 4 -40 8 12 16 0 -60 -20 20 60 100 140 Gate-emitter voltage VGE (V) Case temperature Tc (C) 3 2003-02-05 GT40Q321 VCE, VGE - QG 400 Common emitter RL = 7.5 W Tc = 25C 20 50000 30000 C - VCE (V) (V) 10000 5000 3000 1000 500 300 100 Collector-emitter volgate VCE Gate-emitter voltage VGE (pF) 300 15 Cies 200 VCE = 300 V 10 Capacitance C 100 V 100 200 V 5 Coes 0 0 50 100 150 0 200 Common emitter 50 V GE = 0 30 f = 1 MHz Tc = 25C 10 0.1 1 0.3 Cres 3 10 30 100 300 1000 Gate charge QG (nC) Collector-emitter voltage VCE (V) Switching time - IC 10 5 3 Common emitter VCC = 600 V RG = 39 W VGG = 15 V Tc = 25C toff tf ton tr 5 Switching time - RG Common emitter 3 VCC = 600 V IC = 40 A VGG = 15 V Tc = 25C 1 0.5 0.3 toff tf ton tr (ms) 1 0.5 0.3 Switching time Switching time 10 20 30 40 50 (ms) 0.1 0.05 0.03 0.1 0.05 0.03 0.01 0 0.01 1 3 10 30 100 300 1000 Collector current IC (A) Gate resistance RG (W) Safe operating area 5000 3000 1000 *Single non-repetitive pulse Tc = 25C Curves must be derated linearly with increases in temperature. 5000 3000 1000 Reverse bias SOA Tj 125C VGG = 20 V RG = 10 W (A) IC Collector current Collector current 3000 10000 100 IC max (pulsed)* 50 30 10 5 3 1 1 DC operation 1 ms* IC max (continuous) 100 ms* 10 ms* 10 ms* IC 3 10 30 100 300 1000 500 300 (A) 500 300 100 50 30 10 5 3 1 1 3 10 30 100 300 1000 3000 10000 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) 4 2003-02-05 GT40Q321 ICmax - Tc (A) 50 Common emitter 40 VGE = 15 V 102 rth (t) - tw Tc = 25C ICmax Transient thermal impedance rth (t) (C/W) 101 Diode stage 10 0 Maximum DC collector current 30 IGBT stage 10-1 20 10-2 10 10-3 10-5 0 25 50 75 100 125 150 10-4 10-3 10-2 10-1 100 101 102 Pulse width tw (s) Case temperature Tc (C) IF - VF 80 Common collector VGE = 0 0.8 -40 25 Tc = 125C trr, Irr - IF 8 (A) trr 40 0.4 Irr 4 20 0.2 Common collector di/dt = -20 A/ms 0 0 Tc = 25C 10 20 30 40 2 10 0 1 2 3 4 0 50 Forward voltage VF (V) Forward current IF (A) trr, Irr - di/dt 1.0 Common collector IF = 10 A Tc = 25C 20 (ms) 0.8 16 trr 0.6 trr 12 0.4 8 0.2 Irr 4 0.0 0 50 100 150 200 0 250 di/dt (A/ms) Reverse recovery current Reverse recovery time Irr (A) 5 2003-02-05 Reverse recovery current Irr 60 (ms) 0.6 6 Forward current IF Reverse recovery time trr (A) GT40Q321 RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 6 2003-02-05 |
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