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| CEM4410A March 1998 N-Channel Enhancement Mode Field Effect Transistor 5 FEATURES 30V , 10A , RDS(ON)=11m RDS(ON)=20m @VGS=10V. @VGS=4.5V. D 8 D 7 D 6 D 5 Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. 1 2 3 4 SO-8 1 S S S G ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous a @TJ=125 C b -Pulsed Drain-Source Diode Forward Current a Maximum Power Dissipation a Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit 30 + 20 _ + 10 _ + 30 _ Unit V V A A A W C 2.3 2.5 -55 to 150 THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient a R JA 50 C/W 5-24 CEM4410A ELECTRICAL CHARACTERISTICS (TA =25 C unless otherwise noted) Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS VGS(th) RDS(ON) ID(ON) gFS c Symbol Condition VGS = 0V, ID = 250A VDS = 30V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = 250A VGS =10V, ID = 10A VGS =4.5V, ID= 5A VDS = 5V, VGS = 10V VDS = 15V, ID = 10A Min Typ C Max Unit 5 30 1 V A 100 nA 1 1.5 9 13 30 5 18 1967 708 123 3 11 20 V m m A S ON CHARACTERISTICS b Gate Threshold Voltage Drain-Source On-State Resistance On-State Drain Current Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS COSS CRSS c PF PF PF VDS =10V, VGS = 0V f =1.0MHZ SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Qgs Qgd VDD = 25V, ID = 1A, VGS = 10V, RGEN = 6 25 15 82 25 28 37 23 123 37 34 ns ns ns ns nC nC nC VDS =15V, ID = 10A, VGS =5V 5-25 6 16 CEM4410A ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Parameter 5 Diode Forward Voltage Symbol VSD Condition VGS = 0V, Is = 2.3A Min Typ C Max Unit 0.7 1.1 V DRAIN-SOURCE DIODE CHARACTERISTICS b Notes a.Surface Mounted on FR4 Board, t 10sec. b.Pulse Test:Pulse Width 300 s, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. 25 VGS=10,8,6,5,4V 20 40 50 25 C ID, Drain Current (A) 15 ID, Drain Current (A) 30 10 VGS=3V 5 20 Tj=125 C 10 -55 C 0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 2 3 4 5 6 VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) Figure 1. Output Characteristics RDS (ON), On-Resistance (Ohms) 3000 2500 0.030 Figure 2. Transfer Characteristics VGS=10V 0.025 0.020 Tj=125 C 0.015 25 C 0.010 0.005 0 -55 C C, Capacitance (pF) 2000 1500 1000 Ciss Coss 500 Crss 0 0 5 10 15 20 25 30 0 5 10 15 20 VDS, Drain-to Source Voltage (V) ID, Drain Current(A) Figure 3. Capacitance Figure 4. On-Resistance Variation with Drain Current and Temperature 5-26 CEM4410A BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 VDS=VGS ID=250 A 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 ID=250 A 5 0 25 50 75 100 125 150 Tj, Junction Temperature ( C) Tj, Junction Temperature ( C) Figure 5. Gate Threshold Variation with Temperature 25 Figure 6. Breakdown Voltage Variation with Temperature 50 gFS, Transconductance (S) Is, Source-drain current (A) 20 15 10 5 VDS=15V 0 0 5 10 15 20 10 1 0.1 0.4 0.6 0.8 1.0 1.2 1.4 IDS, Drain-Source Current (A) VSD, Body Diode Forward Voltage (V) Figure 7. Transconductance Variation with Drain Current 10 VGS, Gate to Source Voltage (V) Figure 8. Body Diode Forward Voltage Variation with Source Current 50 mit 8 6 4 2 0 0 ID, Drain Current (A) VDS=15V ID=10A 10 R DS (ON ) Li 10 10 1s DC ms 0m s 0.1 0.03 VGS=10V Single Pulse TA=25 C 0.1 1 10 30 50 6 12 18 24 30 36 42 48 Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Figure 9. Gate Charge 5-27 Figure 10. Maximum Safe Operating Area CEM4410A VDD t on toff tr 90% 5 VGS RGEN V IN D G RL VOUT td(on) VOUT td(off) 90% 10% tf 10% INVERTED 90% S VIN 50% 10% 50% PULSE WIDTH Figure 11. Switching Test Circuit Figure 12. Switching Waveforms 2 r(t),Normalized Effective Transient Thermal Impedance 1 Duty Cycle=0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 PDM t1 t2 1. R JA (t)=r (t) * R JA 2. R JA=See Datasheet 3. TJM-TA = PDM* R JA (t) 4. Duty Cycle, D=t1/t2 10 -2 10 -3 10 -1 1 10 100 Square Wave Pulse Duration (sec) Figure 13. Normalized Thermal Transient Impedance Curve 5-28 |
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