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K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M
FLASH MEMORY
Document Title
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
Revision History
Revision No
0.0 0.1
History
1. Initial issue 1. Iol(R/B) of 1.8V is changed. - min. value : 7mA --> 3mA - Typ. value : 8mA --> 4mA 2. AC parameter is changed. tRP(min.) : 30ns --> 25ns 3. A recovery time of minimum 1s is required before internal circuit gets ready for any command sequences as shown in Figure 17. ---> A recovery time of minimum 10s is required before internal circuit gets ready for any command sequences as shown in Figure 17.
Draft Date
July. 5. 2001 Nov. 5. 2001
Remark
Advance
Dec. 4. 2001
0.2
1. ALE status fault in ' Random data out in a page' timing diagram(page 19) is fixed. 1. tAR1, tAR2 are merged to tAR.(Page11) (Before revision) min. tAR1 = 10ns , min. tAR2 = 50ns (After revision) min. tAR = 10ns 2. min. tCLR is changed from 50ns to 10ns.(Page11) 3. min. tREA is changed from 35ns to 30ns.(Page11) 4. min. tWC is changed from 50ns to 45ns.(Page11) 5. tRHZ is devided into tRHZ and tOH.(Page11) - tRHZ : RE High to Output Hi-Z - tOH : RE High to Output Hold 6. tCHZ is devided into tCHZ and tOH.(Page11) - tCHZ : CE High to Output Hi-Z - tOH : CE High to Output Hold 1. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 35) 2. Add the data protection Vcc guidence for 1.8V device - below about 1.1V. (Page 36) 1. The min. Vcc value 1.8V devices is changed. K9F1GXXQ0M : Vcc 1.65V~1.95V --> 1.70V~1.95V Pb-free Package is added. K9F1G08U0M-FCB0,FIB0 K9F1G08Q0M-PCB0,PIB0 K9F1G08U0M-PCB0,PIB0 K9F1G16U0M-PCB0,PIB0 K9F1G16Q0M-PCB0,PIB0 Apr. 25. 2002
0.3
0.4
Nov. 22.2002
0.5
Mar. 6.2003
0.6
Mar. 13.2003
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the SAMSUNG branch office near your office.
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K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M
FLASH MEMORY
Document Title
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
Revision History
Revision No
0.7
History
Errata is added.(Front Page)-K9F1GXXQ0M tWC tWP tWH tRC tREH tRP tREA tCEA Specification 45 25 15 50 15 25 30 45 Relaxed value 80 60 20 80 20 60 60 75
Draft Date
Mar.17. 2003
Remark
0.8
1. The 3rd Byte ID after 90h ID read command is don' cared. t The 5th Byte ID after 90h ID read command is deleted. 1. 2.65V device is added. 2. Note is added. (VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for durations of 20 ns or less.) AC parameters are changed-K9F1GXXQ0M tWC tWP tWH tRC tREH tRP tREA tCEA Before 45 25 15 50 15 25 30 45 After 80 60 20 80 20 60 60 75 Added Addressing method for program operation 1. Add the Protrusion/Burr value in WSOP1 PKG Diagram. 1. PKG(TSOP1, WSOP1) Dimension Change
Apr. 9. 2003
0.9
Jul. 2. 2003
1.0
Aug. 5. 2003
1.1 1.2 1.3
Jan. 27. 2004 Apr. 23. 2004 May. 24. 2004
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the SAMSUNG branch office near your office.
2
K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M
FLASH MEMORY
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
PRODUCT LIST
Part Number K9F1G08Q0M-Y,P K9F1G16Q0M-Y,P K9F1G08D0M-Y,P K9F1G16D0M-Y,P K9F1G08U0M-Y,P K9F1G16U0M-Y,P K9F1G08U0M-V,F 2.7 ~ 3.6V 2.4 ~ 2.9V Vcc Range 1.70 ~ 1.95V Organization X8 X16 X8 X16 X8 X16 X8 WSOP1 TSOP1 TSOP1 PKG Type TSOP1
FEATURES
* Voltage Supply -1.8V device(K9F1GXXQ0M): 1.70V~1.95V - 2.65V device(K9F1GXXD0M) : 2.4~2.9V -3.3V device(K9F1GXXU0M): 2.7 V ~3.6 V * Organization - Memory Cell Array -X8 device(K9F1G08X0M) : (128M + 4,096K)bit x 8bit -X16 device(K9F1G16X0M) : (64M + 2,048K)bit x 16bit - Data Register -X8 device(K9F1G08X0M): (2K + 64)bit x8bit -X16 device(K9F1G16X0M): (1K + 32)bit x16bit - Cache Register -X8 device(K9F1G08X0M): (2K + 64)bit x8bit -X16 device(K9F1G16X0M): (1K + 32)bit x16bit * Automatic Program and Erase - Page Program -X8 device(K9F1G08X0M): (2K + 64)Byte -X16 device(K9F1G16X0M): (1K + 32)Word - Block Erase -X8 device(K9F1G08X0M): (128K + 4K)Byte -X16 device(K9F1G16X0M): (64K + 2K)Word * Page Read Operation - Page Size - X8 device(K9F1G08X0M): 2K-Byte - X16 device(K9F1G16X0M) : 1K-Word - Random Read : 25s(Max.) - Serial Access : 50ns(Min.)* *K9F1GXXQ0M : 80ns * Fast Write Cycle Time - Program time : 300s(Typ.) - Block Erase Time : 2ms(Typ.) * Command/Address/Data Multiplexed I/O Port * Hardware Data Protection - Program/Erase Lockout During Power Transitions * Reliable CMOS Floating-Gate Technology - Endurance : 100K Program/Erase Cycles - Data Retention : 10 Years * Command Register Operation * Cache Program Operation for High Performance Program * Power-On Auto-Read Operation * Intelligent Copy-Back Operation * Unique ID for Copyright Protection * Package : - K9F1GXXX0M-YCB0/YIB0 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch) - K9F1G08U0M-VCB0/VIB0 48 - Pin WSOP I (12X17X0.7mm) - K9F1GXXX0M-PCB0/PIB0 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)- Pb-free Package - K9F1G08U0M-FCB0/FIB0 48 - Pin WSOP I (12X17X0.7mm)- Pb-free Package * K9F1G08U0M-V,F(WSOPI ) is the same device as K9F1G08U0M-Y,P(TSOP1) except package type.
GENERAL DESCRIPTION
Offered in 128Mx8bit or 64Mx16bit, the K9F1GXXX0M is 1G bit with spare 32M bit capacity. Its NAND cell provides the most costeffective solution for the solid state mass storage market. A program operation can be performed in typical 300s on the 2112byte(X8 device) or 1056-word(X16 device) page and an erase operation can be performed in typical 2ms on a 128K-byte(X8 device) or 64K-word(X16 device) block. Data in the data page can be read out at 50ns(1.8V device : 80ns) cycle time per byte(X8 device) or word(X16 device).. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F1GXXX0Ms extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F1GXXX0M is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.
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K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M
PIN CONFIGURATION (TSOP1)
K9F1GXXX0M-YCB0,PCB0/YIB0,PIB0 X16
N.C N.C N.C N.C N.C N.C R/B RE CE N.C N.C Vcc Vss N.C N.C CLE ALE WE WP N.C N.C N.C N.C N.C
FLASH MEMORY
X8
N.C N.C N.C N.C N.C N.C R/B RE CE N.C N.C Vcc Vss N.C N.C CLE ALE WE WP N.C N.C N.C N.C N.C 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25
X8
N.C N.C N.C N.C I/O7 I/O6 I/O5 I/O4 N.C N.C PRE Vcc Vss N.C N.C N.C I/O3 I/O2 I/O1 I/O0 N.C N.C N.C N.C
X16
Vss I/O15 I/O7 I/O14 I/O6 I/O13 I/O5 I/O12 I/O4 N.C PRE Vcc N.C N.C N.C I/O11 I/O3 I/O10 I/O2 I/O9 I/O1 I/O8 I/O0 Vss
48-pin TSOP1 Standard Type 12mm x 20mm
PACKAGE DIMENSIONS
48-PIN LEAD/LEAD FREE PLASTIC THIN SMALL OUT-LINE PACKAGE TYPE(I) 48 - TSOP1 - 1220AF
Unit :mm/Inch
0.10 MAX 0.004 #48 ( 0.25 ) 0.010 12.40 0.488 MAX #24 #25 1.000.05 0.0390.002 0.25 0.010 TYP 18.400.10 0.7240.004
+0.075
20.000.20 0.7870.008
0.20 -0.03
+0.07
#1
0.008-0.001
0.16 -0.03
+0.07
+0.003
0.50 0.0197
12.00 0.472
0.05 0.002 MIN
0.125 0.035
0~8
0.45~0.75 0.018~0.030
( 0.50 ) 0.020
4
+0.003 0.005-0.001
1.20 0.047MAX
K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M
PIN CONFIGURATION (WSOP1)
K9F1G08U0M-VCB0,FCB0/VIB0,FIB0
N.C N.C DNU N.C N.C N.C R/B RE CE DNU N.C Vcc Vss N.C DNU CLE ALE WE WP N.C N.C DNU N.C N.C 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 N.C N.C DNU N.C I/O7 I/O6 I/O5 I/O4 N.C DNU N.C Vcc Vss N.C DNU N.C I/O3 I/O2 I/O1 I/O0 N.C DNU N.C N.C
FLASH MEMORY
PACKAGE DIMENSIONS
48-PIN LEAD PLASTIC VERY VERY THIN SMALL OUT-LINE PACKAGE TYPE (I) 48 - WSOP1 - 1217F
Unit :mm
0.70 MAX 15.400.10 0.580.04
#1
+0.07 -0.03
#48
+0.07 -0.03
0.16
12.40MAX
12.000.10
0.50TYP (0.500.06)
0.20
#24
#25
(0.01Min)
0.10 +0.075 -0.035
8 0~
0.45~0.75 17.000.20
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K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M
PIN DESCRIPTION
Pin Name I/O0 ~ I/O7 (K9F1G08X0M) I/O0 ~ I/O15 (K9F1G16X0M) Pin Function
FLASH MEMORY
DATA INPUTS/OUTPUTS The I/O pins are used to input command, address and data, and to output data during read operations. The I/ O pins float to high-z when the chip is deselected or when the outputs are disabled. I/O8 ~ I/O15 are used only in X16 organization device. Since command input and address input are x8 operation, I/O8 ~ I/O15 are not used to input command & address. I/O8 ~ I/O15 are used only for data input and output. COMMAND LATCH ENABLE The CLE input controls the activating path for commands sent to the command register. When active high, commands are latched into the command register through the I/O ports on the rising edge of the WE signal. ADDRESS LATCH ENABLE The ALE input controls the activating path for address to the internal address registers. Addresses are latched on the rising edge of WE with ALE high. CHIP ENABLE The CE input is the device selection control. When the device is in the Busy state, CE high is ignored, and the device does not return to standby mode. READ ENABLE The RE input is the serial data-out control, and when active drives the data onto the I/O bus. Data is valid tREA after the falling edge of RE which also increments the internal column address counter by one. WRITE ENABLE The WE input controls writes to the I/O port. Commands, address and data are latched on the rising edge of the WE pulse. WRITE PROTECT The WP pin provides inadvertent write/erase protection during power transitions. The internal high voltage generator is reset when the WP pin is active low. READY/BUSY OUTPUT The R/B output indicates the status of the device operation. When low, it indicates that a program, erase or random read operation is in process and returns to high state upon completion. It is an open drain output and does not float to high-z condition when the chip is deselected or when outputs are disabled. POWER-ON READ ENABLE The PRE controls auto read operation executed during power-on. The power-on auto-read is enabled when PRE pin is tied to Vcc. POWER VCC is the power supply for device. GROUND NO CONNECTION Lead is not internally connected.
CLE
ALE
CE
RE
WE
WP
R/B
PRE
Vcc Vss N.C
NOTE : Connect all VCC and VSS pins of each device to common power supply outputs. Do not leave VCC or VSS disconnected.
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K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M
Figure 1-1. K9F1G08X0M (X8) Functional Block Diagram
VCC VSS A12 - A27 X-Buffers Latches & Decoders Y-Buffers Latches & Decoders 1024M + 32M Bit NAND Flash ARRAY
FLASH MEMORY
A0 - A11
(2048 + 64)Byte x 65536 Data Register & S/A Cache Register Y-Gating
Command Command Register I/O Buffers & Latches VCC VSS I/0 0
CE RE WE
Control Logic & High Voltage Generator
Global Buffers
Output Driver
I/0 7 CLE ALE PRE WP
Figure 2-1. K9F1G08X0M (X8) Array Organization
1 Block = 64 Pages (128K + 4k) Byte
64K Pages (=1,024 Blocks) 8 bit 2K Bytes 64 Bytes
1 Page = (2K + 64)Bytes 1 Block = (2K + 64)B x 64 Pages = (128K + 4K) Bytes 1 Device = (2K+64)B x 64Pages x 1024 Blocks = 1056 Mbits
Page Register
2K Bytes 64 Bytes I/O 2 A2 A10 A14 A22 I/O 3 A3 A11 A15 A23
I/O 0 ~ I/O 7
I/O 0 1st Cycle 2nd Cycle 3rd Cycle 4th Cycle A0 A8 A12 A20
I/O 1 A1 A9 A13 A21
I/O 4 A4 *L A16 A24
I/O 5 A5 *L A17 A25
I/O 6 A6 *L A18 A26
I/O 7 A7 *L A19 A27 Column Address Column Address Row Address Row Address
NOTE : Column Address : Starting Address of the Register. * L must be set to "Low". * The device ignores any additional input of address cycles than reguired.
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K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M
Figure 1-2. K9F1G16X0M (X16) Functional Block Diagram
VCC VSS A11 - A26 X-Buffers Latches & Decoders Y-Buffers Latches & Decoders 1024M + 32M Bit NAND Flash ARRAY
FLASH MEMORY
A0 - A10
(512 + 64)Word x 65536 Data Register & S/A Cache Register Y-Gating
Command Command Register I/O Buffers & Latches VCC VSS I/0 0
CE RE WE
Control Logic & High Voltage Generator
Global Buffers
Output Driver
I/0 15 CLE ALE PRE WP
Figure 2-2. K9F1G16X0M (X16) Array Organization
1 Block = 64 Pages (64K + 2k) Word
64K Pages (=1,024 Blocks) 16 bit 1K Words 32 Words
1 Page = (1K + 32)Words 1 Block = (1K + 32)Word x 64 Pages = (64K + 2K) Words 1 Device = (1K+32)Word x 64Pages x 1024 Blocks = 1056 Mbits
Page Register
1K Words 32 Words I/O 3 A3 *L A14 A22 I/O 4 A4 *L A15 A23
I/O 0 ~ I/O 15
I/O 0 1st Cycle 2nd Cycle 3rd Cycle 4th Cycle A0 A8 A11 A19
I/O 1 A1 A9 A12 A20
I/O 2 A2 A10 A13 A21
I/O 5 A5 *L A16 A24
I/O 6 A6 *L A17 A25
I/O 7 A7 *L A18 A26
I/O8 ~ 15 *L *L *L *L Column Address Column Address Row Address Row Address
NOTE : Column Address : Starting Address of the Register. * L must be set to "Low". * The device ignores any additional input of address cycles than reguired.
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K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M
Product Introduction
FLASH MEMORY
The K9F1GXXX0M is a 1056Mbit(1,107,296,256 bit) memory organized as 65,536 rows(pages) by 2112x8(X8 device) or 1056x16(X16 device) columns. Spare 64(X8) or 32(X16) columns are located from column address of 2048~2111(X8 device) or 1024~1055(X16 device). A 2112-byte(X8 device) or 1056-word(X16 device) data register and a 2112-byte(X8 device) or 1056word(X16 device) cache register are serially connected to each other. Those serially connected registers are connected to memory cell arrays for accommodating data transfer between the I/O buffers and memory cells during page read and page program operations. The memory array is made up of 32 cells that are serially connected to form a NAND structure. Each of the 32 cells resides in a different page. A block consists of two NAND structured strings. A NAND structure consists of 32 cells. Total 1081344 NAND cells reside in a block. The program and read operations are executed on a page basis, while the erase operation is executed on a block basis. The memory array consists of 1024 separately erasable 128K-byte(X8 device) or 64K-word(X16 device) blocks. It indicates that the bit by bit erase operation is prohibited on the K9F1GXXX0M. The K9F1GXXX0M has addresses multiplexed into 8 I/Os(X16 device case : lower 8 I/Os). This scheme dramatically reduces pin counts and allows system upgrades to future densities by maintaining consistency in system board design. Command, address and data are all written through I/O's by bringing WE to low while CE is low. Those are latched on the rising edge of WE. Command Latch Enable(CLE) and Address Latch Enable(ALE) are used to multiplex command and address respectively, via the I/O pins. Some commands require one bus cycle. For example, Reset Command, Status Read Command, etc require just one cycle bus. Some other commands, like page read and block erase and page program, require two cycles: one cycle for setup and the other cycle for execution. The 128M byte(X8 device) or 64M word(X16 device) physical space requires 28(X8) or 27(X16) addresses, thereby requiring four cycles for addressing: 2 cycles of column address, 2 cycles of row address, in that order. Page Read and Page Program need the same four address cycles following the required command input. In Block Erase operation, however, only the two row address cycles are used. Device operations are selected by writing specific commands into the command register. Table 1 defines the specific commands of the K9F1GXXX0M. The device provides cache program in a block. It is possible to write data into the cache registers while data stored in data registers are being programmed into memory cells in cache program mode. The program performace may be dramatically improved by cache program when there are lots of pages of data to be programmed. The device embodies power-on auto-read feature which enables serial access of data of the 1st page without command and address input after power-on. In addition to the enhanced architecture and interface, the device incorporates copy-back program feature from one page to another page without need for transporting the data to and from the external buffer memory. Since the time-consuming serial access and data-input cycles are removed, system performance for solid-state disk application is significantly increased.
Table 1. Command Sets
Function Read Read for Copy Back Read ID Reset Page Program Cache Program Copy-Back Program Block Erase Random Data Input* Random Data Output* Read Status 1st. Cycle 00h 00h 90h FFh 80h 80h 85h 60h 85h 05h 70h 2nd. Cycle 30h 35h 10h 15h 10h D0h E0h O O Acceptable Command during Busy
NOTE : 1. Random Data Input/Output can be executed in a page. 2. Command not specified in command sets table is not permitted to be entered to the device, which can raise erroneous operation. Caution : Any undefined command inputs are prohibited except for above command set of Table 1.
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K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol 1.8V DEVICE Voltage on any pin relative to VSS Temperature Under Bias Storage Temperature Short Circuit Current K9F1GXXX0M-XCB0 K9F1GXXX0M-XIB0 K9F1GXXX0M-XCB0 K9F1GXXX0M-XIB0 Ios 5 TSTG VIN/OUT VCC TBIAS -0.6 to + 2.45 -0.2 to + 2.45 Rating
FLASH MEMORY
Unit -0.6 to + 4.6 -0.6 to + 4.6
3.3V/2.65V DEVICE V C C mA
-10 to +125 -40 to +125 -65 to +150
NOTE : 1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns. Maximum DC voltage on input/output pins is VCC,+0.3V which, during transitions, may overshoot to VCC+2.0V for periods <20ns. 2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9F1GXXX0M-XCB0 :TA=0 to 70C, K9F1GXXX0M-XIB0:TA=-40 to 85C) Parameter Supply Voltage Supply Voltage Symbol VCC VSS K9F1GXXQ0M(1.8V) Min 1.70 0 Typ. 1.8 0 Max 1.95 0 K9F1GXXD0M(2.65V) Min 2.4 0 Typ. 2.65 0 Max 2.9 0 K9F1GXXU0M(3.3V) Min 2.7 0 Typ. 3.3 0 Max 3.6 0 Unit V V
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K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M
FLASH MEMORY
DC AND OPERATING CHARACTERISTICS(Recommended operating conditions otherwise noted.)
K9F1GXXX0M Parameter Symbol Test Conditions Min Page Read with Operating Serial Access Current Program Erase Stand-by Current(TTL) Stand-by Current(CMOS) Input Leakage Current Output Leakage Current Input High Voltage Input Low Voltage, All inputs Output High Voltage Level ICC1 ICC2 ICC3 ISB1 ISB2 ILI ILO VIH* VIL* VOH tRC=50ns, CE=VIL IOUT=0mA CE=VIH, WP=PRE=0V/VCC CE=VCC-0.2, WP=PRE=0V/VCC VIN=0 to Vcc(max) VOUT=0 to Vcc(max) K9F1GXXQ0M :IOH=-100A K9F1GXXD0M :IOH=-100A K9F1GXXU0M :IOH=-400A Output Low Voltage Level K9F1GXXQ0M :IOL=100uA VOL K9F1GXXD0M :IOL=100A K9F1GXXU0M :IOL=2.1mA Output Low Current(R/B) K9F1GXXQ0M :VOL=0.1V IOL(R/B) K9F1GXXD0M :VOL=0.1V K9F1GXXU0M :VOL=0.4V 3 4 3 4 8 10 mA 0.1 0.4 0.4 VCC -0.4 -0.3 Vcc -0.1 1.8V Typ Max 8 8 8 10 15 15 15 1 50 10 10 VCC +0.3 0.4 Min VCC -0.4 -0.3 VCCQ -0.4 2.65V Typ 10 10 10 10 Max 20 20 20 1 50 10 10 VCC +0.3 0.5 Min 2.0 -0.3 2.4 3.3V Typ 10 10 10 10 Max 20 20 20 1 50 10 10 VCC +0.3 0.8 V A mA Unit
NOTE : VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for durations of 20 ns or less.
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K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M
VALID BLOCK
Parameter Valid Block Number Symbol NVB Min 1004 Typ. -
FLASH MEMORY
Max 1024 Unit Blocks
NOTE : 1. The K9F1GXXX0M may include invalid blocks when first shipped. Additional invalid blocks may develop while being used. The number of valid blocks is presented with both cases of invalid blocks considered. Invalid blocks are defined as blocks that contain one or more bad bits. Do not erase or program factory-marked bad blocks. Refer to the attached technical notes for appropriate management of invalid blocks. 2. The 1st block, which is placed on 00h block address, is guaranteed to be a valid block, does not require Error Correction up to 1K program/erase cycles.
AC TEST CONDITION
(K9F1GXXX0M-XCB0 :TA=0 to 70C, K9F1GXXX0M-XIB0:TA=-40 to 85C K9F1GXXQ0M : Vcc=1.70V~1.95V, K9F1GXXD0M : Vcc=2.4V~2.9V , K9F1GXXU0M : Vcc=2.7V~3.6V unless otherwise noted) Parameter Input Pulse Levels Input Rise and Fall Times Input and Output Timing Levels K9F1GXXQ0M 0V to Vcc 5ns Vcc/2 K9F1GXXD0M 0V to Vcc 5ns Vcc/2 K9F1GXXU0M 0.4V to 2.4V 5ns 1.5V
K9F1GXXQ0M:Output Load (Vcc:1.8V +/-10%) K9F1GXXD0M:Output Load (VccQ:2.65V +/-10%) 1 TTL GATE and CL=30pF 1 TTL GATE and CL=30pF 1 TTL GATE and CL=50pF K9F1GXXU0M:Output Load (Vcc:3.0V +/-10%) K9F1GXXU0M:Output Load (Vcc:3.3V +/-10%) 1 TTL GATE and CL=100pF
CAPACITANCE(TA=25C, VCC=1.8V/2.65V/3.3V, f=1.0MHz)
Item Input/Output Capacitance Input Capacitance Symbol CI/O CIN Test Condition VIL=0V VIN=0V Min Max 10 10 Unit pF pF
NOTE : Capacitance is periodically sampled and not 100% tested.
MODE SELECTION
CLE H L H L L L X X X X X ALE L H L H L L X X X X(1) X CE L L L L L L X X X X H H X X X X X H X X X X WE RE H H H H H WP X X H H H X X H H L 0V/VCC(2) PRE X X X X X X X X X X 0V/VCC(2) Data Input Data Output During Read(Busy) During Program(Busy) During Erase(Busy) Write Protect Stand-by Write Mode Read Mode Mode Command Input Address Input(4clock) Command Input Address Input(4clock)
NOTE : 1. X can be VIL or VIH. 2. WP and PRE should be biased to CMOS high or CMOS low for standby.
12
K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M
Program / Erase Characteristics
Parameter Program Time Dummy Busy Time for Cache Program Number of Partial Program Cycles in the Same Page Block Erase Time Main Array Spare Array Symbol tPROG tCBSY Nop tBERS Min Typ 300 3 2
FLASH MEMORY
Max 700 700 4 4 3
Unit s s cycles cycles ms
NOTE : 1. Max. time of tCBSY depends on timing between internal program completion and data in
AC Timing Characteristics for Command / Address / Data Input
Parameter CLE setup Time CLE Hold Time CE setup Time CE Hold Time WE Pulse Width ALE setup Time ALE Hold Time Data setup Time Data Hold Time Write Cycle Time WE High Hold Time Symbol
K9F1GXXQ0M
Min
K9F1GXXD0M K9F1GXXU0M K9F1GXXQ0M
Max
K9F1GXXD0M K9F1GXXU0M
Unit ns ns ns ns ns ns ns ns ns ns ns
tCLS tCLH tCS tCH tWP tALS tALH tDS tDH tWC tWH
0 10 0 10 60 0 10 20 10 80 20
0 10 0 10 25
(1)
0 10 0 10 25
(1)
-
-
0 10 20 10 45 15
0 10 20 10 45 15
NOTE : 1. If tCS is set less than 10ns, tWP must be minimum 35ns, otherwise, tWP may be minimum 25ns.
AC Characteristics for Operation
Parameter Data Transfer from Cell to Register ALE to RE Delay CLE to RE Delay Ready to RE Low RE Pulse Width WE High to Busy Read Cycle Time RE Access Time CE Access Time RE High to Output Hi-Z CE High to Output Hi-Z RE or CE High to Output hold RE High Hold Time Output Hi-Z to RE Low WE High to RE Low Device Resetting Time (Read/Program/Erase) Symbol tR tAR tCLR tRR tRP tWB tRC tREA tCEA tRHZ tCHZ tOH tREH tIR tWHR tRST 10 10 20 60 80 15 20 0 60 Min Max Unit 25 100 30 45 30 20 5/10/500(1) s ns ns ns ns ns ns ns ns ns ns ns ns ns ns s
K9F1GXXQ0M K9F1GXXD0M K9F1GXXU0M K9F1GXXQ0M K9F1GXXD0M K9F1GXXU0M
10 10 20 25 50 15 15 0 60 -
10 10 20 25 50 15 15 0 60 -
25 100 60 75 30 20 5/10/500(1)
25 100 30 45 30 20 5/10/500(1)
NOTE: 1. If reset command(FFh) is written at Ready state, the device goes into Busy for maximum 5us.
13
K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M
NAND Flash Technical Notes
Invalid Block(s)
FLASH MEMORY
Invalid blocks are defined as blocks that contain one or more invalid bits whose reliability is not guaranteed by Samsung. The information regarding the invalid block(s) is so called as the invalid block information. Devices with invalid block(s) have the same quality level as devices with all valid blocks and have the same AC and DC characteristics. An invalid block(s) does not affect the performance of valid block(s) because it is isolated from the bit line and the common source line by a select transistor. The system design must be able to mask out the invalid block(s) via address mapping. The 1st block, which is placed on 00h block address, is guaranteed to be a valid block, does not require Error Correction up to 1K program/erase cycles.
Identifying Invalid Block(s)
All device locations are erased(FFh for X8, FFFFh for X16) except locations where the invalid block(s) information is written prior to shipping. The invalid block(s) status is defined by the 1st byte(X8 device) or 1st word(X16 device) in the spare area. Samsung makes sure that either the 1st or 2nd page of every invalid block has non-FFh(X8) or non-FFFFh(X16) data at the column address of 2048(X8 device) or 1024(X16 device). Since the invalid block information is also erasable in most cases, it is impossible to recover the information once it has been erased. Therefore, the system must be able to recognize the invalid block(s) based on the original invalid block information and create the invalid block table via the following suggested flow chart(Figure 3). Any intentional erasure of the original invalid block information is prohibited.
Start
Set Block Address = 0
Increment Block Address
*
Create (or update) Invalid Block(s) Table No Check "FFh or FFFFh" ? Yes No
Check "FFh( or FFFFh)" at the column address 2048(X8 device) or 1024(X16 device) of the 1st and 2nd page in the block
Last Block ?
Yes
End
Figure 3. Flow chart to create invalid block table.
14
K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M
NAND Flash Technical Notes (Continued)
Error in write or read operation
FLASH MEMORY
Within its life time, additional invalid blocks may develop with NAND Flash memory. Refer to the qualification report for the actual data.The following possible failure modes should be considered to implement a highly reliable system. In the case of status read failure after erase or program, block replacement should be done. Because program status fail during a page program does not affect the data of the other pages in the same block, block replacement can be executed with a page-sized buffer by finding an erased empty block and reprogramming the current target data and copying the rest of the replaced block.To improve the efficiency of memory space, it is recommended that the read or verification failure due to single bit error be reclaimed by ECC without any block replacement. The said additional block failure rate does not include those reclaimed blocks.
Failure Mode Erase Failure Write Program Failure Single Bit Failure
Detection and Countermeasure sequence Status Read after Erase --> Block Replacement Status Read after Program --> Block Replacement Read back ( Verify after Program) --> Block Replacement or ECC Correction Verify ECC -> ECC Correction
Read
ECC
: Error Correcting Code --> Hamming Code etc. Example) 1bit correction & 2bit detection
Program Flow Chart
If ECC is used, this verification operation is not needed. Start Write 00h
Write 80h
Write Address
Write Address
Write Data
Write 30h
Write 10h
Wait for tR Time
Read Status Register
Verify Data
Fail
*
Program Error
I/O 6 = 1 ? or R/B = 1 ? Yes No I/O 0 = 0 ?
No
Pass Program Completed
*
Program Error
*
: If program operation results in an error, map out the block including the page in error and copy the target data to another block.
Yes
15
K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M
NAND Flash Technical Notes (Continued)
Erase Flow Chart
Start Write 60h Write Block Address Write D0h Read Status Register
FLASH MEMORY
Read Flow Chart
Start Write 00h Write Address Write 30h Read Data ECC Generation I/O 6 = 1 ? or R/B = 1 ? Yes No No Reclaim the Error
Verify ECC Yes Page Read Completed
*
Erase Error
No
I/O 0 = 0 ? Yes Erase Completed
*
: If erase operation results in an error, map out the failing block and replace it with another block.
Block Replacement
1st (n-1)th nth (page)
{ {
Block A
1st (n-1)th nth (page)
* Step1 When an error happens in the nth page of the Block ' during erase or program operation. A' * Step2 Copy the data in the 1st ~ (n-1)th page to the same location of another free block. (Block ' ) B' * Step3 Then, copy the nth page data of the Block ' in the buffer memory to the nth page of the Block ' . A' B' * Step4 Do not erase or program to Block ' by creating an ' A' invalid Block'table or other appropriate scheme.

1 an error occurs. Buffer memory of the controller. Block B 2
16
K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M
NAND Flash Technical Notes (Continued)
Addressing for program operation
FLASH MEMORY
Within a block, the pages must be programmed consecutively from the LSB (least significant bit) page of the block to MSB (most significant bit) pages of the block. Random page address programming is prohibited.
Page 63
(64)
:
Page 63
(64)
:
Page 31
(32)
:
Page 31
(1)
:
Page 2 Page 1 Page 0
(3) (2) (1)
Page 2 Page 1 Page 0
(3) (32) (2)
Data register
Data register
From the LSB page to MSB page DATA IN: Data (1) Data (64)
Ex.) Random page program (Prohibition) DATA IN: Data (1) Data (64)
17
K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M
System Interface Using CE don' t-care.
FLASH MEMORY
For an easier system interface, CE may be inactive during the data-loading or serial access as shown below. The internal 2112byte(X8 device) or 1056word(X16 device) data registers are utilized as separate buffers for this operation and the system design gets more flexible. In addition, for voice or audio applications which use slow cycle time on the order of u-seconds, de-activating CE during the data-loading and serial access would provide significant savings in power consumption.
Figure 4. Program Operation with CE don' t-care.
CLE
CE don' t-care
CE
WE ALE I/Ox
80h
Address(4Cycles)
Data Input
Data Input
10h
tCS CE
tCH CE
tCEA
tREA tWP WE I/O0~7 out RE
t-care. Figure 5. Read Operation with CE don'
CLE
CE don' t-care
CE
RE ALE R/B tR
WE I/Ox
00h
Address(4Cycle)
30h
Data Output(serial access)
18
K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M
NOTE
FLASH MEMORY
DATA Data In/Out ~2112byte ~1056word Col. Add1 A0~A7 A0~A7 ADDRESS Col. Add2 A8~A11 A8~A10 Row Add1 A12~A19 A11~A18 Row Add2 A20~A27 A19~A26
Device K9F1G08X0M(X8 device) K9F1G16X0M(X16 device)
I/O I/Ox I/O 0 ~ I/O 7 I/O 0 ~ I/O 15
Command Latch Cycle
CLE tCLS tCS CE tCLH tCH
tWP WE
tALS ALE tDS I/Ox K9F1G16X0M : I/O8~15 must be set to "0"
tALH
tDH
Command
Address Latch Cycle
tCLS CLE
tCS CE
tWC
tWC
tWC
tWP WE tALS ALE tDS I/Ox K9F1G16X0M : I/O8~15 tDH tWH tALH tALS
tWP tWH tALH tALS
tWP tWH tALH tALS
tWP tALH
tDS
tDH
tDS
tDH
tDS
tDH
Col. Add1
Col. Add2
Row Add1
Row Add2
must be set to "0"
19
K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M
Input Data Latch Cycle
tCLH
FLASH MEMORY
CLE
tCH CE
tALS ALE
tWC
tWP WE tDS I/Ox tWH tDH
tWP
tDH
tWP tDH tDS tDS
DIN 0 DIN 1 DIN final*
NOTES : DIN final means 2112(X8) or 1056(X16)
Serial Access Cycle after Read(CLE=L, WE=H, ALE=L)
tCEA
CE
tRP
RE tRHZ* I/Ox tRR R/B tRHZ* tOH Dout
Dout tRC
Dout
NOTES : Transition is measured 200mV from steady state voltage with load. This parameter is sampled and not 100% tested.
20
tREA
tREH tREA tREA
tCHZ* tOH
K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M
Status Read Cycle
tCLR CLE tCLS tCS CE tCH tWP WE tWHR RE tDS I/Ox K9F1G16X0M : I/O8~15 must be set to "0" 70h tDH tIR* tREA tCEA tCLH
FLASH MEMORY
tCHZ* tOH
tRHZ* tOH Status Output
21
K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M
Read Operation
tCLR CLE
FLASH MEMORY
CE tWC WE tWB tAR ALE tR RE tRR I/Ox
00h
Col. Add1 Col. Add2 Row Add1 Row Add2
tRC
tRHZ tOH
30h
tCHZ tOH
Dout N+2
Dout N Dout N+1 Dout M
Column Address
Row Address Busy
R/B
Read Operation(Intercepted by CE)
CLE
CE
WE tWB tAR ALE tR RE tRR I/Ox
00h Col. Add1 Col. Add2 Row Add1 Row Add2 30h
tRC
Dout N
Dout N+1
Column Address
Row Address
R/B
Busy
22
Random Data Output In a Page
CLE tCLR
K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M
CE
WE tWB tAR tWHR
23 tR tRC tRR
Col. Add2 Row Add1 Row Add2
ALE tREA
RE
I/Ox
Row Address
00h Dout N
Col. Add1
30h
Dout N+1
05h
Col Add1
Col Add2
E0h
Dout M
Dout M+1
Column Address
Column Address
FLASH MEMORY
R/B
Busy
K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M
Page Program Operation
FLASH MEMORY
CLE
CE
WE tWB ALE tPROG
RE
Din Din N M 1 up to m Byte Serial Input
I/Ox
80h SerialData Input Command
Co.l Add1
Col. Add2
Row Add1
Row Add2
tWC
tWC
tWC
10h Program Command
70h Read Status Command
I/O0
Column Address
Row Address
R/B
X8 device : m = 2112byte X16 device : m = 1056word
I/O0=0 Successful Program I/O0=1 Error in Program
24
Page Program Operation with Random Data Input
K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M
CLE
CE tWC tWC
tWC
WE
tWB
tPROG
Serial Data Input Command Row Address Serial Input
Column Address
Random Data Column Address Input Command
Serial Input
Col. Add2
25
Row Add1 Row Add2
ALE
RE
I/Ox
80h 85h
Col. Add1
Col. Add1
Col. Add2
Din N Din M
Din J
Din K
10h Program Command
70h Read Status Command
I/O0
FLASH MEMORY
R/B
Copy-Back Program Operation with Random Data Input
K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M
CLE
CE
tWC tWB tWB tR tPROG
WE
Column Address Row Address
Column Address Row Address
Busy
Copy-Back Data Input Command
26
Row Add1 Row Add2
ALE
RE
I/Ox
35h
Col Add1 Col Add2
00h
Col Add1
Col Add2
85h
Row Add1 Row Add2 Data 1
Data N
10h
70h
I/O0 Read Status Command
R/B
Busy
I/O0=0 Successful Program I/O0=1 Error in Program
FLASH MEMORY
Cache Program Operation(available only within a block)
CLE
CE
tWC
WE
tWB tCBSY tWB
K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M
tPROG
ALE
RE
Serial Data Column Address Row Address Input Command Serial Input
Max. 63 times repeatable
Last Page Input & Program
tCBSY :
max. 700us
Ex.) Cache Program tCBSY tCBSY tCBSY tPROG
R/B
27
80h Address & Data Input 15h 80h Address & Data Input 15h
I/Ox
80h
Col Add1 Col Add2 Row Add1 Row Add2
Din N Din M 15h Program Command (Dummy) 80h
Col Add1 Col Add2 Row Add1 Row Add2
Din N
Din 10h M Program Confirm Command (True)
70h
I/O
R/B
FLASH MEMORY
I/Ox
80h
Address & 15h Data Input Col Add1,2 & Row Add1,2 Data
80h
Address & Data Input
10h
70h
K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M
BLOCK ERASE OPERATION
FLASH MEMORY
CLE
CE tWC WE tWB ALE tBERS
RE
I/Ox
60h
Row Add1
Row Add2
D0h
70h
I/O 0
Row Address
Auto Block Erase Setup Command
Erase Command
R/B
Busy
Read Status Command
I/O0=0 Successful Erase I/O0=1 Error in Erase
28
K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M
Read ID Operation
FLASH MEMORY
CLE
CE
WE tAR
ALE
RE tREA I/Ox
90h Read ID Command 00h Address. 1cycle ECh Device Code* XXh 4th cyc.*
Maker Code Device Code
Device K9F1G08Q0M K9F1G08D0M K9F1G08U0M K9F1G16Q0M K9F1G16D0M K9F1G16U0M
Device Code*(2nd Cycle) A1h F1h F1h B1h C1h C1h
4th Cycle* 15h 15h 15h 55h 55h 55h
ID Defintition Table 90 ID : Access command = 90H
Description 1st Byte 2nd Byte 3rd Byte 4th Byte Maker Code Device Code Don' care t Page Size, Block Size, Spare Size, Organization,Serial access minimum
29
K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M
4th ID Data
ITEM Page Size (w/o redundant area ) Description 1KB 2KB Reserved Reserved 64KB 128KB 256KB Reserved 8 16 x8 x16 50ns 25ns Reserved Reserved 0 1 0 1 0 1 0 0 1 1 0 1 0 1 I/O7 I/O6 I/O5 I/O4
FLASH MEMORY
I/O3 I/O2 I/O1 I/O0 0 0 1 1 0 1 0 1
Blcok Size (w/o redundant area ) Redundant Area Size ( byte/512byte) Organization
0 1
Serial Access minimum
0 0 1 1
30
K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M
Device Operation
PAGE READ
FLASH MEMORY
Upon initial device power up, the device defaults to Read mode. This operation is also initiated by writing 00h and 30h to the command register along with four address cycles. In two consecutive read operations, the second one doesn' need 00h command, which t four address cycles and 30h command initiates that operation.Two types of operations are available : random read, serial page read The random read mode is enabled when the page address is changed. The 2112 bytes(X8 device) or 1056 words(X16 device) of data within the selected page are transferred to the data registers in less than 25s(tR). The system controller can detect the completion of this data transfer(tR) by analyzing the output of R/B pin. Once the data in a page is loaded into the data registers, they may be read out in 50ns(1.8V device : 80ns) cycle time by sequentially pulsing RE. The repetitive high to low transitions of the RE clock make the device output the data starting from the selected column address up to the last column address. The device may output random data in a page instead of the consecutive sequential data by writing random data output command. The column address of next data, which is going to be out, may be changed to the address which follows random data output command. Random data output can be operated multiple times regardless of how many times it is done in a page.
Figure 6. Read Operation
CLE CE WE ALE R/B RE I/Ox
00h Address(4Cycle) Col Add1,2 & Row Add1,2 30h Data Output(Serial Access)
tR
Data Field
Spare Field
31
K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M
Figure 7. Random Data Output In a Page
FLASH MEMORY
R/B RE I/Ox
00h Address 4Cycles 30h
tR
Data Output
05h
Address 2Cycles
E0h
Data Output
Col Add1,2 & Row Add1,2
Data Field
Spare Field
Data Field
Spare Field
PAGE PROGRAM
The device is programmed basically on a page basis, but it does allow multiple partial page programing of a word or consecutive bytes up to 2112(X8 device) or words up to 1056(X16 device), in a single page program cycle. The number of consecutive partial page programming operation within the same page without an intervening erase operation must not exceed 4 times for main array(X8 device:1time/512byte, X16 device:1time/256word) and 4 times for spare array(X8 device:1time/16byte ,X16 device:1time/8word). The addressing should be done in sequential order in a block. A page program cycle consists of a serial data loading period in which up to 2112bytes(X8 device) or 1056words(X16 device) of data may be loaded into the data register, followed by a non-volatile programming period where the loaded data is programmed into the appropriate cell. The serial data loading period begins by inputting the Serial Data Input command(80h), followed by the four cycle address inputs and then serial data loading. The words other than those to be programmed do not need to be loaded. The device supports random data input in a page. The column address of next data, which will be entered, may be changed to the address which follows random data input command(85h). Random data input may be operated multiple times regardless of how many times it is done in a page. The Page Program confirm command(10h) initiates the programming process. Writing 10h alone without previously entering the serial data will not initiate the programming process. The internal write state controller automatically executes the algorithms and timings necessary for program and verify, thereby freeing the system controller for other tasks. Once the program process starts, the Read Status Register command may be entered to read the status register. The system controller can detect the completion of a program cycle by monitoring the R/B output, or the Status bit(I/O 6) of the Status Register. Only the Read Status command and Reset command are valid while programming is in progress. When the Page Program is complete, the Write Status Bit(I/O 0) may be checked(Figure 8). The internal write verify detects only errors for "1"s that are not successfully programmed to "0"s. The command register remains in Read Status command mode until another valid command is written to the command register.
Figure 8. Program & Read Status Operation
tPROG R/B
"0"
I/Ox
80h
Address & Data Input Col Add1,2 & Row Add1,2 Data
10h
70h
I/O0 "1" Fail
Pass
32
K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M
Figure 9. Random Data Input In a Page
tPROG R/B
FLASH MEMORY
"0"
I/Ox
80h
Address & Data Input Col Add1,2 & Row Add1,2 Data
85h
Address & Data Input Col Add1,2 Data
10h
70h
I/O0 "1" Fail
Pass
Cache Program
Cache Program is an extension of Page Program, which is executed with 2112byte(X8 device) or 1056word(X16 device) data registers, and is available only within a block. Since the device has 1 page of cache memory, serial data input may be executed while data stored in data register are programmed into memory cell. After writing the first set of data up to 2112byte(X8 device) or 1056word(X16 device) into the selected cache registers, Cache Program command (15h) instead of actual Page Program (10h) is inputted to make cache registers free and to start internal program operation. To transfer data from cache registers to data registers, the device remains in Busy state for a short period of time(tCBSY) and has its cache registers ready for the next data-input while the internal programming gets started with the data loaded into data registers. Read Status command (70h) may be issued to find out when cache registers become ready by polling the Cache-Busy status bit(I/O 6). Pass/fail status of only the previouse page is available upon the return to Ready state. When the next set of data is inputted with the Cache Program command, tCBSY is affected by the progress of pending internal programming. The programming of the cache registers is initiated only when the pending program cycle is finished and the data registers are available for the transfer of data from cache registers. The status bit(I/O5) for internal Ready/Busy may be polled to identify the completion of internal programming. If the system monitors the progress of programming only with R/B, the last page of the target programming sequence must be progammed with actual Page Program command (10h).
Figure 10. Cache Program(available only within a block)
R/B
Address & Data Input*
tCBSY
tCBSY
tCBSY
tPROG
80h
15h
80h
Address & Data Input
15h
80h
Address & Data Input
15h
80h
Col Add1,2 & Row Add1,2 Data
Col Add1,2 & Row Add1,2 Data
Col Add1,2 & Row Add1,2 Data
Address & 10h Data Input Col Add1,2 & Row Add1,2 Data
70h
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K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M
FLASH MEMORY
NOTE : Since programming the last page does not employ caching, the program time has to be that of Page Program. However, if the previous program cycle with the cache data has not finished, the actual program cycle of the last page is initiated only after completion of the previous cycle, which can be expressed as the following formula. tPROG= Program time for the last page+ Program time for the ( last -1 )th page - (Program command cycle time + Last page data loading time)
Copy-Back Program
The copy-back program is configured to quickly and efficiently rewrite data stored in one page without utilizing an external memory. Since the time-consuming cycles of serial access and re-loading cycles are removed, the system performance is improved. The benefit is especially obvious when a portion of a block is updated and the rest of the block also need to be copied to the newly assigned free block. The operation for performing a copy-back program is a sequential execution of page-read without serial access and copying-program with the address of destination page. A read operation with "35h" command and the address of the source page moves the whole 2112byte(X8 device) or 1056word(X16 device) data into the internal data buffer. As soon as the device returns to Ready state, Page-Copy Data-input command (85h) with the address cycles of destination page followed may be written. The Program Confirm command (10h) is required to actually begin the programming operation. Data input cycle for modifying a portion or multiple distant portions of the source page is allowed as shown in Figure 12. "When there is a program-failure at Copy-Back operation, error is reported by pass/fail status. But if the soure page has a bit error for charge loss, accumulated copy-back operations could also accumulate bit errors. For this reason, two bit ECC is recommended for copy-back operation."
Figure 11. Page Copy-Back program Operation
tR R/B I/Ox tPROG
00h
Add.(4Cycles)
35h
85h
Add.(4Cycles)
10h
70h
I/O0
Pass
Col. Add1,2 & Row Add1,2 Source Address
Col. Add1,2 & Row Add1,2 Destination Address Fail
Figure 12. Page Copy-Back program Operation with Random Data Input
tR R/B I/Ox
Add.(4Cycles) Add.(2Cycles) Col Add1,2 There is no limitation for the number of repetition.
tPROG
00h
35h
85h
Add.(4Cycles)
Data
85h
Data
10h
70h
Col. Add1,2 & Row Add1,2 Source Address
Col. Add1,2 & Row Add1,2 Destination Address
34
K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M
BLOCK ERASE
FLASH MEMORY
The Erase operation is done on a block basis. Block address loading is accomplished in two cycles initiated by an Erase Setup command(60h). Only address A18 to A27(X8) or A17 to A26(X16) is valid while A12 to A17(X8) or A11 to A16(X16) is ignored. The Erase Confirm command(D0h) following the block address loading initiates the internal erasing process. This two-step sequence of setup followed by execution command ensures that memory contents are not accidentally erased due to external noise conditions. At the rising edge of WE after the erase confirm command input, the internal write controller handles erase and erase-verify. When the erase operation is completed, the Write Status Bit(I/O 0) may be checked. Figure 13 details the sequence.
Figure 13. Block Erase Operation
R/B tBERS
"0"
I/Ox
60h
Address Input(2Cycle) Block Add. : A12 ~ A27 (X8) or A11 ~ A26 (X16)
D0h
70h
I/O0 "1" Fail
Pass
READ STATUS
The device contains a Status Register which may be read to find out whether program or erase operation is completed, and whether the program or erase operation is completed successfully. After writing 70h command to the command register, a read cycle outputs the content of the Status Register to the I/O pins on the falling edge of CE or RE, whichever occurs last. This two line control allows the system to poll the progress of each device in multiple memory connections even when R/B pins are common-wired. RE or CE does not need to be toggled for updated status. Refer to table 2 for specific Status Register definitions. The command register remains in Status Read mode until further commands are issued to it. Therefore, if the status register is read during a random read cycle, the read command(00h) should be given before starting read cycles.
Table2. Read Staus Register Definition
I/O No. I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 I/O 8~15
(X16 device only)
Page Program Pass/Fail Not use Not use Not Use Not Use Ready/Busy Ready/Busy Write Protect Not use
Block Erase Pass/Fail Not use Not use Not Use Not Use Ready/Busy Ready/Busy Write Protect Not use
Cache Prorgam Pass/Fail(N) Pass/Fail(N-1) Not use Not Use Not Use True Ready/Busy Ready/Busy Write Protect Not use
Read Not use Not use Not use Not Use Not Use Ready/Busy Ready/Busy Write Protect Not use Pass : "0" Pass : "0" "0" "0" "0" Busy : "0" Busy : "0"
Definition Fail : "1" Fail : "1"
Ready : "1" Ready : "1" Not Protected:"1"
Protected:"0" Don' -care t
NOTE : 1. True Ready/Busy represents internal program operation status which is being executed in cache program mode.
2. I/Os defined ' Not use'are recommended to be masked out when Read Status is being executed.
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K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M
Read ID
FLASH MEMORY
The device contains a product identification mode, initiated by writing 90h to the command register, followed by an address input of 00h. Four read cycles sequentially output the manufacturer code(ECh), and the device code and XXh, 4th cycle ID, respectively. The command register remains in Read ID mode until further commands are issued to it. Figure 14 shows the operation sequence.
Figure 14. Read ID Operation
CLE CE WE tAR ALE RE tWHR I/OX
90h 00h Address. 1cycle
tCLR tCEA
tREA
ECh Maker code
Device Code* Device code
XXh
4th Cyc.*
Device K9F1G08Q0M K9F1G08D0M K9F1G08U0M K9F1G16Q0M K9F1G16D0M K9F1G16U0M
Device Code*(2nd Cycle) A1h F1h F1h B1h C1h C1h
4th Cycle* 15h 15h 15h 55h 55h 55h
RESET
The device offers a reset feature, executed by writing FFh to the command register. When the device is in Busy state during random read, program or erase mode, the reset operation will abort these operations. The contents of memory cells being altered are no longer valid, as the data will be partially programmed or erased. The command register is cleared to wait for the next command, and the Status Register is cleared to value C0h when WP is high. Refer to table 3 for device status after reset operation.If the device is already in reset state a new reset command will be accepted by the command register. The R/B pin transitions to low for tRST after the Reset command is written. Refer to Figure 15 below.
Figure 15. RESET Operation
tRST R/B I/OX
FFh
Table3. Device Status
After Power-up PRE status Operation Mode High First page data access is ready Low 00h command is latched After Reset Waiting for next command
36
K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M
Power-On Auto-Read
FLASH MEMORY
The device is designed to offer automatic reading of the first page without command and address input sequence during power-on. An internal voltage detector enables auto-page read functions when Vcc reaches about 1.8V. PRE pin controls activation of autopage read function. Auto-page read function is enabled only when PRE pin is tied to Vcc. Serial access may be done after power-on without latency. Power-On Auto Read mode is available only on 3.3V device(K9F1GXXU0M).
Figure 15. Power-On Auto-Read (3.3V device only)
~ 1.8V VCC
WE ALE PRE R/B tR
RE I/OX
1st
2nd
3rd
.... n th
37

CE
CLE
K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M
READY/BUSY
FLASH MEMORY
The device has a R/B output that provides a hardware method of indicating the completion of a page program, erase and random read completion. The R/B pin is normally high but transitions to low after program or erase command is written to the command register or random read is started after address loading. It returns to high when the internal controller has finished the operation. The pin is an open-drain driver thereby allowing two or more R/B outputs to be Or-tied. Because pull-up resistor value is related to tr(R/B) and current drain during busy(ibusy) , an appropriate value can be obtained with the following reference chart(Fig 16). Its value can be determined by the following guidance.
Rp VCC
ibusy 1.8V device - VOL : 0.1V, VOH : VCCq-0.1V 2.65V device - VOL : 0.4V, VOH : Vccq-0.4V 3.3V device - VOL : 0.4V, VOH : 2.4V VOH
Ready Vcc R/B open drain output
CL
VOL Busy tf tr
GND Device
Figure 16. Rp vs tr ,tf & Rp vs ibusy
38
K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M
@ Vcc = 1.8V, Ta = 25C , CL = 30pF
FLASH MEMORY
tr,tf [s]
300n
Ibusy
3m
Ibusy [A]
Ibusy [A]
200n
1.7
2m tr
0.85 60 0.57 0.43 1.7 90 120
100n
30 1.7
1m
tf
1.7
1.7
1K
2K
3K Rp(ohm)
4K
@ Vcc = 2.65V, Ta = 25C , CL = 30pF
tr,tf [s]
300n
Ibusy 200n
30 2.3 1.1
2m
90 0.75 2.3 120
100n
tr tf
60 2.3
1m
2.3 0.55
1K
2K
3K Rp(ohm)
4K
@ Vcc = 3.3V, Ta = 25C , CL = 100pF
2.4 400
tr,tf [s]
300n
Ibusy
1.2 300
3m
200n tr 100n
100 3.6 tf
200
0.8 0.6
2m 1m
3.6
3.6
3.6
1K
2K
Rp value guidance
VCC(Max.) - VOL(Max.) IOL + IL VCC(Max.) - VOL(Max.) IOL + IL VCC(Max.) - VOL(Max.) IOL + IL = = =
3K Rp(ohm) 1.85V 3mA + IL 2.5V 3mA + IL 3.2V 8mA + IL
4K
Rp(min, 1.8V part) =
Rp(min, 2.65V part) =
Rp(min, 3.3V part) =
where IL is the sum of the input currents of all devices tied to the R/B pin. Rp(max) is determined by maximum permissible limit of tr
39
Ibusy [A]
2.3
3m
K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M
Data Protection & Power up sequence
FLASH MEMORY
The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector disables all functions whenever Vcc is below about 1.1V(1.8V device), 1.8V(2.65V device), 2V(3.3V device). WP pin provides hardware protection and is recommended to be kept at VIL during power-up and power-down. A recovery time of minimum 10s is required before internal circuit gets ready for any command sequences as shown in Figure 17. The two step command sequence for program/erase provides additional software protection.
Figure 17. AC Waveforms for Power Transition
1.8V device : ~ 1.5V 2.65V device : ~ 2.0V 3.3V device : ~ 2.5V VCC High
1.8V device : ~ 1.5V 2.65V device : ~ 2.0V 3.3V device : ~ 2.5V
WP
WE
40
10s

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