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| Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged FEATURES * Low forward volt drop * Fast switching * Soft recovery characteristic * Reverse surge capability * High thermal cycling performance * Isolated mounting tab BYQ30EX series SYMBOL QUICK REFERENCE DATA VR = 150 V/ 200 V VF 0.95 V IO(AV) = 16 A IRRM 0.2 A trr 25 ns a1 1 k2 a2 3 GENERAL DESCRIPTION Ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies. The BYQ30EX series is supplied in the conventional leaded SOT186A package. PINNING PIN 1 2 3 tab DESCRIPTION anode 1 cathode anode 2 isolated SOT186A case 123 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VRWM VR IO(AV) IFRM IFSM PARAMETER Peak repetitive reverse voltage Crest working reverse voltage Continuous reverse voltage square wave = 0.5; Ths 59 C t = 25 s; = 0.5; Ths 59 C t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRWM(max) Repetitive peak reverse current tp = 2 s; = 0.001 per diode Non-repetitive peak reverse tp = 100 s current per diode Storage temperature Operating junction temperature Average rectified output current (both diodes conducting)1 Repetitive peak forward current per diode Non-repetitive peak forward current per diode CONDITIONS BYQ30EX -40 MIN. -150 150 150 150 16 16 100 110 0.2 0.2 150 150 MAX. -200 200 200 200 UNIT V V V A A A A A A C C IRRM IRSM Tstg Tj ESD LIMITING VALUE SYMBOL VC PARAMETER Electrostatic discharge capacitor voltage CONDITIONS Human body model; C = 250 pF; R = 1.5 k MIN. MAX. 8 UNIT kV 1 Neglecting switching and reverse current losses. October 1998 1 Rev 1.200 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 C unless otherwise specified SYMBOL Visol PARAMETER R.M.S. isolation voltage from all three terminals to external heatsink CONDITIONS f = 50-60 Hz; sinusoidal waveform; R.H. 65% ; clean and dustfree MIN. - BYQ30EX series TYP. MAX. 2500 UNIT V Cisol Capacitance from T2 to external f = 1 MHz heatsink - 10 - pF THERMAL RESISTANCES SYMBOL Rth j-hs Rth j-a PARAMETER Thermal resistance junction to heatsink Thermal resistance junction to ambient CONDITIONS with heatsink compound without heatsink compound in free air MIN. TYP. 55 MAX. 5.0 7.0 UNIT K/W K/W K/W ELECTRICAL CHARACTERISTICS characteristics are per diode at Tj = 25 C unless otherwise stated SYMBOL VF IR Qs trr Irrm Vfr PARAMETER Forward voltage Reverse current Reverse recovery charge Reverse recovery time Peak reverse recovery current Forward recovery voltage CONDITIONS IF = 8 A; Tj = 150C IF = 16 A; Tj = 150C IF = 16 A; VR = VRWM; Tj = 100 C VR = VRWM IF = 2 A; VR 30 V; -dIF/dt = 20 A/s IF = 1 A; VR 30 V; -dIF/dt = 100 A/s IF = 1 A; VR 30 V; -dIF/dt = 50 A/s; Tj = 100 C IF = 1 A; dIF/dt = 10 A/s MIN. TYP. 0.83 1.0 0.98 0.3 2 4 20 1.0 1 MAX. 0.95 1.15 1.25 0.6 30 11 25 2 UNIT V V mA A nC ns A V October 1998 2 Rev 1.200 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged BYQ30EX series I dI F dt F 12 10 Forward dissipation, PF (W) BYQ30 Vo = 0.75 V Rs 0.025 Ohms Ths(max) / C 90 100 t a = 1.57 rr time 8 2.8 6 4 4 1.9 2.2 110 120 130 140 150 8 Q I R I s 10% 100% 2 0 rrm 0 1 2 3 4 5 6 Average forward current, IF(AV) (A) 7 Fig.1. Definition of trr, Qs and Irrm Fig.4. Maximum forward dissipation PF = f(IF(AV))per diode; sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV). trr / ns 1000 I F 100 IF=10A time IF=1A VF V VF time fr 10 1 1 10 dIF/dt (A/us) 100 Fig.2. Definition of Vfr Fig.5. Maximum trr at Tj = 25 C. 12 10 8 6 4 2 Forward dissipation, PF (W) BYQ30 Vo = 0.75 V Rs = 0.025 Ohms 0.5 0.2 0.1 I tp Ths(max) / C D = 1.0 trr / ns 80 90 110 120 1000 100 IF=10A IF=1A D= tp T t 130 140 150 12 10 T 0 0 2 4 6 8 Average forward current, IF(AV) (A) 10 1 1 10 dIF/dt (A/us) 100 Fig.3. Maximum forward dissipation PF = f(IF(AV)) per diode; square current waveform where IF(AV) =IF(RMS) x D. Fig.6. Maximum trr at Tj = 100 C. October 1998 3 Rev 1.200 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged BYQ30EX series 10 Irrm / A 100 Qs / nC IF=10A 1 IF=1A IF=10A 5A 2A 1A 10 0.1 0.01 1 10 -dIF/dt (A/us) 100 1.0 1.0 10 -dIF/dt (A/us) 100 Fig.7. Maximum Irrm at Tj = 25 C. Fig.10. Maximum Qs at Tj = 25 C. 10 Irrm / A 10 Transient thermal impedance, Zth j-hs (K/W) IF=10A 1 IF=1A 1 0.1 0.1 0.01 P D tp D= tp T t 0.01 1 10 -dIF/dt (A/us) 100 0.001 1us T 10us 100us 1ms 10ms 100ms 1s 10s pulse width, tp (s) BYQ30EX Fig.8. Maximum Irrm at Tj = 100 C. Fig.11. Transient thermal impedance; Zth j-hs = f(tp). 20 Forward current, IF (A) Tj = 25 C Tj = 150 C BYQ30 15 10 typ 5 max 0 0 0.5 1 1.5 Forward voltage, VF (V) 2 Fig.9. Typical and maximum forward characteristic IF = f(VF); parameter Tj October 1998 4 Rev 1.200 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged MECHANICAL DATA Dimensions in mm Net Mass: 2 g 10.3 max 3.2 3.0 BYQ30EX series 4.6 max 2.9 max Recesses (2x) 2.5 0.8 max. depth 2.8 6.4 15.8 19 max. max. seating plane 15.8 max 3 max. not tinned 3 2.5 13.5 min. 1 0.4 M 2 3 1.0 (2x) 0.6 2.54 0.5 2.5 1.3 0.9 0.7 5.08 Fig.12. SOT186A; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". October 1998 5 Rev 1.200 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged DEFINITIONS Data sheet status Objective specification Product specification Limiting values BYQ30EX series This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. October 1998 6 Rev 1.200 |
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