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| BC394 HIGH VOLTAGE AMPLIFIER DESCRIPTION The BC394 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case, designed for general purpose high-voltage and video amplifier applications. The complementary PNP type is the BC393. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC Pt o t T st g Tj January 1989 Parameter Collector-base Voltage (I E = 0) Collector-emitter Voltage (I B = 0) Emitter-base Voltage (I C = 0) Collector Current Total Power Dissipation at T amb 25 C at T c as e 25 C Storage Temperature Junction Temperature Value 180 180 6 100 0.4 1.4 - 55 to 200 200 Unit V V V mA W W C C 1/5 BC394 THERMAL DATA R t h j-c ase R t h j -amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 125 440 C/W C/W ELECTRICAL CHARACTERISTICS (T amb = 25 C unless otherwise specified) Symbol I CB O Parameter Collector Cutoff Current (I E = 0 ) Collector-base Breakdown Voltage (I E = 0 ) Collector-emitter Breakdown Voltage (I B = 0 ) Emitter-base Breakdown Voltage (I C = 0 ) Collector-emitter Saturation Voltage Base-emitter Saturation Voltage DC Curent Gain Transition frequency Collector-base Capacitance Test Conditions V CB = 100 V V CB = 100 V I C = 100 A I C = 10 mA I E = 100 A I C = 10 mA I C = 50 mA I C = 10 mA I C = 50 mA I C = 1 mA I C = 10 mA I C = 10 mA IE = 0 f = 1 MHz I B = 1 mA I B = 5 mA I B = 1 mA I B = 5 mA V CE = 10 V V CE = 10 V V CE = 10 V V CB = 10 V 5 pF 30 50 Min. Typ. Max. 50 50 180 180 6 200 400 750 850 85 100 95 MHz 300 Unit nA A V V V mV mV mV mV T amb = 150 C V ( BR) V (BR) V ( BR) V CE CBO CEO * EBO (s at ) * V BE ( sat ) * 900 hFE * fT C CBO * Pulsed : pulse duration = 300 s, duty cycle = 1 %. DC Current. Collector-emitter Saturation Voltage. 2/5 BC394 Base-emitter Saturation Voltage. Transition Frequency. 3/5 BC394 TO39 MECHANICAL DATA mm DIM. MIN. A B D E F G H I L 5.08 1.2 0.9 45o (typ.) 12.7 0.49 6.6 8.5 9.4 0.200 0.047 0.035 TYP. MAX. MIN. 0.500 0.019 0.260 0.334 0.370 TYP. MAX. inch D G I H E F A L B P008B 4/5 BC394 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 5/5 |
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