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| Silicon Junction FETs (Small Signal) 2SK123 Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone +0.2 5.8-0.3 unit: mm s Features q High mutual conductance gm q Low noise voltage of NV 0.4-0.05 2.40.1 1 0.95 0.95 1.90.2 1.5-0.05 +0.25 1.90.1 +0.1 1.45 2 0.16-0.06 +0.1 +0.1 3 s Absolute Maximum Ratings (Ta = 25C) Parameter Drain to Source voltage Drain to Gate voltage Drain to Source current Drain to Gate current Gate to Source current Allowable power dissipation Operating ambient temperature Storage temperature Symbol VDSO VDGO IDSO IDGO IGSO PD Topr Tstg Ratings 20 20 2 2 2 200 -20 to +80 -55 to +150 Unit V V mA mA mA mW C C 0.4-0.05 +0.1 0.4-0.05 1: Drain 2: Source 3: Gate Mini Flat Package (3-pin) Marking Symbol: 1H Note: For the forming type, (Y) is indicated after the part No. s Electrical Characteristics (Ta = 25C) Parameter Current consumption Drain to Source cut-off current Mutual conductance Noise figure Symbol ID IDSS gm NV Conditions VD = 4.5V, CO = 10pF, RD = 2.2k 1% VDS = 4.5V, VGS = 0 VD = 4.5V, VGS = 0, f = 1kHz VD = 4.5V, RD = 2.2k 1% CO = 10pF, A-curve VD = 4.5V, RD = 2.2k 1% CO = 10pF, eG = 10mV, f = 1kHz VD = 12V, RD = 2.2k 1% CO = 10pF, eG = 10mV, f = 1kHz VD = 1.5V, RD = 2.2k 1% CO = 10pF, eG = 10mV, f = 1kHz -3 2 min 100 95 0.7 1.6 4 typ max 600 480 Unit A A mS V GV1 Voltage gain GV2 GV3 Voltage gain difference |GV2 - GV1| |GV1 - GV3| dB 0 -4.5 0 0 3.3 - 0.3 +3.5 +3.5 dB dB dB dB 1.1-0.1 0.8 +0.2 2.9-0.05 +0.2 1 Silicon Junction FETs (Small Signal) PD Ta 240 0.40 Ta=25C 0.35 200 VGS=0V 500 2SK123 ID VDS 600 VDS=4.5V ID VGS Allowable power dissipation PD (mW) Drain current ID (mA) 160 Drain current ID (A) 0.30 0.25 0.20 0.15 0.10 0.05 0 - 0.10V 400 - 0.05V 120 300 Ta=75C 200 80 40 Topr max. - 0.15V - 0.20V 100 25C 0 - 0.5 -25C - 0.2 - 0.1 0 0 0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 12 - 0.4 - 0.3 Ambient temperature Ta (C) Drain to source voltage VDS (V) Gate to source voltage VGS (V) gm VGS 2.0 VDS=4.5V f=1kHz Ta=25C 1.6 2.0 g m ID VDS=4.5V f=1kHz Ta=25C 1.6 Mutual conductance gm (mS) 1.2 IDSS=0.3mA 0.8 Mutual conductance gm (mS) 1.2 IDSS=0.3mA 0.8 0.4 0.4 0.15mA 0 -1.0 0 - 0.8 - 0.6 - 0.4 - 0.2 0 0 0.1 0.2 0.3 0.4 0.5 Gate to source voltage VGS (V) Drain current ID (mA) 2 |
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