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| 2SD2211 / 2SD1918 / 2SD1857A Transistors Power Transistor (160V , 1.5A) 2SD2211 / 2SD1918 / 2SD1857A !Features 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance. (Typ. 20pF at VCB = 10V) 3) High transition frequency.(fT = 80MHZ) 4) Complements the 2SB1275 / 2SB1236A. !External dimensions (Units : mm) 2SD2211 1.0 1.5 0.4 (1) 4.0 2.5 0.5 3.0 0.5 (3) 1.5 0.4 1.5 4.5 1.6 (2) ROHM : MPT3 EIAJ : SC-62 (1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source) !Absolute maximum ratings (Ta = 25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current 2SD1857A Collector power dissipation 2SD2211 2SD1918 Tj Tstg PC Symbol VCBO VCEO VEBO IC Limits 160 160 5 1.5 3 1 2 1 10 150 -55 +150 Unit 0.75 V V V A(DC) A(Pulse) W W W(Tc=25C) C C 1 2 3 2SD1918 5.5 1.5 (3) (2) (1) 2.3 0.9 0.4 0.9 0.65 2.3 1.0 0.5 0.5 1.5 2.5 9.5 Junction temperature Storage temperature 2.3 0.8Min. 5.1 6.5 C0.5 1 Single pulse Pw=100ms 2 Printed circuit board 1.7mm thick, collector plating 1cm2 or larger. 3 When mounted on a 40 x 40 x 0.7mm ceramic board. ROHM : CPT3 EIAJ : SC-63 (1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source) 2SD1857A 6.8 2.5 !Packaging specifications and hFE 0.65Max. 1.0 0.9 Type Package hFE Marking Code Basic ordering unit (pieces) * Denotes hFE 2SD2211 MPT3 QR DQ* T100 1000 2SD1918 2SD1857A CPT3 Q - TL 2500 ATV PQ - TV2 2500 (1) (2) (3) 2.54 2.54 0.5 1.05 14.5 4.4 0.45 Taping specifications ROHM : ATV (1) Emitter (2) Collector (3) Base !Electrical characteristics (Ta = 25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage DC current 2SD2211,2SD1918 hFE 2SD1857A fT Cob Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(sat) Min. 160 160 5 - - - - Typ. - - - - - - - - - Max. - - - Unit V V V A A V V - - Conditions IC = 50A IC = 1mA IE = 50A VCB = 120V VEB = 4V IC/IB = 1A/0.1A IC/IB = 1A/0.1A VCE/IC = 5V/0.1A VCE = 5V , IE = -0.1A , f = 30MHz VCB = 10V , IE = 0A , f = 1MHz 1 1 2 1.5 390 270 - - 120 82 - - transfer ratio Transition frequency Output capacitance Measured using pulse current. 80 20 MHz pF |
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