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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N2369/D Switching Transistors NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 2N2369 2N2369A* *Motorola Preferred Device 3 2 MAXIMUM RATINGS Rating Collector - Emitter Voltage Collector - Emitter Voltage Collector- Base Voltage Emitter- Base Voltage Collector Current (10 ms pulse) Collector Current -- Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 100C Derate above 100C Operating and Storage Junction Temperature Range Symbol VCEO VCES VCBO VEBO IC(Peak) IC PD PD TJ, Tstg Value 15 40 40 4.5 500 200 0.36 2.06 0.68 6.85 - 65 to +200 Unit Vdc Vdc Vdc Vdc mA mA Watt mW/C Watts mW/C C 1 CASE 22-03, STYLE 1 TO-18 (TO-206AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 486 147 Unit C/W C/W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage (IC = 10 mA, VBE = 0) Collector - Emitter Sustaining Voltage(1) (IC = 10 mAdc, IB = 0) Collector - Base Breakdown Voltage (IC = 10 mA, IB = 0) Emitter - Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) (VCB = 20 Vdc, IE = 0, TA = 150C) Collector Cutoff Current (VCE = 20 Vdc, VBE = 0) Base Current (VCE = 20 Vdc, VBE = 0) 1. Pulse Test: Pulse Width 2N2369 2N2369A ICES 2N2369A IB 2N2369A -- 0.4 V(BR)CES VCEO(sus) V(BR)CBO V(BR)EBO ICBO -- -- -- 0.4 30 0.4 40 15 40 4.5 -- -- -- -- Vdc Vdc Vdc Vdc mAdc mAdc mAdc v 300 ms, Duty Cycle v 2.0%. Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Small-Signal Transistors, FETs and Diodes Device Data (c) Motorola, Inc. 1996 1 2N2369 2N2369A ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain(1) (IC = 10 mAdc, VCE = 1.0 Vdc) hFE 2N2369 2N2369A 2N2369 2N2369A 2N2369A 2N2369A 2N2369 VCE(sat) 2N2369 2N2369A 2N2369A 2N2369A 2N2369A VBE(sat) All Types 2N2369A 2N2369A 2N2369A 2N2369A 0.70 0.59 -- -- -- 0.85 -- 1.02 1.15 1.60 -- -- -- -- -- 0.25 0.20 0.30 0.25 0.50 Vdc 40 -- 20 20 30 20 20 120 120 -- -- -- -- -- Vdc -- (IC = 10 mAdc, VCE = 1.0 Vdc, TA = -55C) (IC = 10 mAdc, VCE = 0.35 Vdc, TA = -55C) (IC = 30 mAdc, VCE = 0.4 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 2.0 Vdc) Collector - Emitter Saturation Voltage(1) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc, TA = +125C) (IC = 30 mAdc, IB = 3.0 mAdc) (IC = 100 mAdc, IB = 10 mAdc) Base - Emitter Saturation Voltage(1) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc, TA = +125C) (IC = 10 mAdc, IB = 1.0 mAdc, TA = -55C) (IC = 30 mAdc, IB = 3.0 mAdc) (IC = 100 mAdc, IB = 10 mAdc) SMALL- SIGNAL CHARACTERISTICS Current - Gain -- Bandwidth Product (IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 1.0 Vdc, IC = 0, f = 1.0 MHz) fT Cobo Cibo 500 -- -- -- 4.0 4.0 MHz pF pF SWITCHING CHARACTERISTICS Storage Time (IC = IB1 = 10 mAdc, IB2 = -10 mAdc) Turn-On Time (IC = 10 mAdc, IB1 = 3.0 mA, IB2 = -1.5 mA, VCC = 3.0 Vdc) Turn-Off Time (IC = 10 mAdc, IB1 = 3.0 mA, IB2 = -1.5 mA, VCC = 3.0 Vdc) 1. Pulse Test: Pulse Width ts ton toff -- -- -- 13 12 18 ns ns ns v 300 ms, Duty Cycle v 2.0%. 2 Motorola Small-Signal Transistors, FETs and Diodes Device Data 2N2369 2N2369A SWITCHING TIME EQUIVALENT TEST CIRCUITS FOR 2N2369, 2N3227 +10.6 V 0 -1.5 V t1 3V 270 +10.75 V 0 -9.15 V < 1 ns PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2% t1 270 < 1 ns 3.3 k Cs* < 4 pF 3.3 k Cs* < 4 pF PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2% Figure 1. ton Circuit -- 10 mA Figure 3. toff Circuit -- 10 mA +10.8 V -2 V 0 t1 10 V 95 +11.4 V 0 -8.6 V t1 10 V 95 < 1 ns 1k Cs* < 12 pF PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2% < 1 ns PULSE WIDTH (t1) BETWEEN 10 AND 500 s DUTY CYCLE = 2% 1k 1N916 Cs* < 12 pF Figure 2. ton Circuit -- 100 mA Figure 4. toff Circuit -- 100 mA * Total shunt capacitance of test jig and connectors. TURN-ON WAVEFORMS Vin 0 ton 10% Vout 90% Vin 3.3 k 3.3 k 0.0023 F 0.005 F VBB + - 0.1 F 50 0.0023 F 0.005 F 0.1 F +V =3V - CC 220 0.1 F Vout 0 TO OSCILLOSCOPE INPUT IMPEDANCE = 50 RISE TIME = 1 ns TURN-OFF WAVEFORMS Vin Vout toff 10% 90% VBB = +12 V Vin = -15 V PULSE GENERATOR Vin RISE TIME < 1 ns SOURCE IMPEDANCE = 50 PW 300 ns DUTY CYCLE < 2% 50 Figure 5. Turn-On and Turn-Off Time Test Circuit 6 5 4 CAPACITANCE (pF) 3 Cib Cob TJ = 25C LIMIT TYPICAL SWITCHING TIMES (nsec) 100 50 tr (VCC = 3 V) tf tr 10 5 ts VCC = 10 V F = 10 VCC = 10 V VOB = 2 V 20 2 td 1 0.1 2 0.2 0.5 1.0 2.0 REVERSE BIAS (VOLTS) 5.0 10 1 2 5 10 20 IC, COLLECTOR CURRENT (mA) 50 100 Figure 6. Junction Capacitance Variations Figure 7. Typical Switching Times Motorola Small-Signal Transistors, FETs and Diodes Device Data 3 2N2369 2N2369A 500 VCC = 10 V 25C 100C QT, F = 10 QT, F = 40 +5 V 100 0 50 QA, VCC = 10 V 20 10 1 2 5 10 20 IC, COLLECTOR CURRENT (mA) 50 100 QA, VCC = 3 V V < 1 ns 4.3 k 270 VALUES REFER TO IC = 10 mA TEST 200 CHARGE (pC) t1 3V 10 pF MAX Cs* < 4 pF PULSE WIDTH (t1) = 5 s DUTY CYCLE = 2% Figure 9. QT Test Circuit Figure 8. Maximum Charge Data C < COPT C COPT TIME C=0 +6 V 0 -4 V t1 10 V 980 < 1 ns 500 Cs* < 3 pF PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2% Figure 10. Turn-Off Waveform VCE , MAXIMUM COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 11. Storage Time Equivalent Test Circuit 1.0 TJ = 25C IC = 3 mA 0.6 IC = 10 mA IC = 30 mA IC = 50 mA IC = 100 mA 0.8 0.4 0.2 0.02 0.05 0.1 0.2 0.5 1 IB, BASE CURRENT (mA) 2 5 10 20 Figure 12. Maximum Collector Saturation Voltage Characteristics 4 Motorola Small-Signal Transistors, FETs and Diodes Device Data 2N2369 2N2369A 200 hFE , MINIMUM DC CURRENT GAIN TJ = 125C 100 75C 25C -15C 50 -55C VCE = 1 V TJ = 25C and 75C 20 1 2 5 10 IC, COLLECTOR CURRENT (mA) 20 50 100 Figure 13. Minimum Current Gain Characteristics 1.4 V(sat) , SATURATION VOLTAGE (VOLTS) 1.2 1.0 0.8 0.6 0.4 0.2 F = 10 TJ = 25C COEFFICIENT (mV/ C) MAX VBE(sat) 1.0 0.5 0 -0.5 -1.0 -1.5 VB for VBE(sat) MAX VCE(sat) 1 2 5 10 20 IC, COLLECTOR CURRENT (mA) 50 100 -2.0 -2.5 0 10 20 30 40 50 60 70 IC, COLLECTOR CURRENT (mA) 80 90 100 VC VB VC for VCE(sat) APPROXIMATE DEVIATION FROM NOMINAL -55C to +25C 0.15 mV/C 0.4 mV/C 25C to 125C 0.15 mV/C 0.3 mV/C (25C to 125C) (-55C to +25C) MIN VBE(sat) (-55C to +25C) (25C to 125C) Figure 14. Saturation Voltage Limits Figure 15. Typical Temperature Coefficients Motorola Small-Signal Transistors, FETs and Diodes Device Data 5 2N2369 2N2369A PACKAGE DIMENSIONS -A- B E C -T- F P L K SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION J MEASURED FROM DIMENSION A MAXIMUM. 4. DIMENSION F APPLIES BETWEEN DIMENSION P AND L. DIMENSION D APPLIES BETWEEN DIMENSION L AND K MINIMUM. LEAD DIAMETER IS UNCONTROLLED IN DIMENSION P AND BEYOND DIMENSION K MINIMUM. 5. DIMENSION E INCLUDES THE TAB THICKNESS. (TAB THICKNESS IS 0.51(0.002) MAXIMUM). DIM A B C D E F G H J K L M N P INCHES MIN MAX 0.209 0.230 0.178 0.195 0.170 0.210 0.016 0.021 --- 0.030 0.016 0.019 0.100 BSC 0.036 0.046 0.028 0.048 0.500 --- 0.250 --- 45 _BSC 0.050 BSC --- 0.050 MILLIMETERS MIN MAX 5.31 5.84 4.52 4.95 4.32 5.33 0.406 0.533 --- 0.762 0.406 0.483 2.54 BSC 0.914 1.17 0.711 1.22 12.70 --- 6.35 --- 45_BSC 1.27 BSC --- 1.27 D 3 PL 0.36 (0.014) N -H- 1 2 3 M TA M H M STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR N G M J CASE 22-03 (TO-206AA) ISSUE R Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 or 602-303-5454 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE 602-244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-81-3521-8315 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 6 2N2369/D Motorola Small-Signal Transistors, FETs and Diodes Device Data *2N2369/D* |
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