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| 2N2218-2N2219 2N2221-2N2222 HIGH-SPEED SWITCHES DESCRIPTION The 2N2218, 2N2219, 2N2221 and 2N2222 are silicon planar epitaxial NPN transistors in Jedec TO-39 (for 2N2218 and 2N2219) and in Jedec TO-18 (for 2N2221 and 2N2222) metal cases. They are designed for high-speed switching applications at collector currents up to 500 mA, and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltages. 2N2218/2N2219 approved to CECC 50002100, 2N2221/2N2222 approved to CECC 50002-101 available on request. TO-39 TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC Pt o t Parameter Collector-base Voltage (I E = 0) Collector-emitter Voltage (I B = 0) Emitter-base Voltage (I C = 0) Collector Current Total Power Dissipation at T amb 25 C for 2N2 21 8 and for 2N2 22 1 and at T c as e 25 C for 2N2 21 8 and for 2N2 22 1 and Storage Temperature Junction Temperature 2 N22 19 2 N22 22 2 N22 19 2 N22 22 Value 60 30 5 0.8 0.8 0.5 3 1.8 - 65 to 200 175 Unit V V V A W W W W C C 1/5 T st g Tj January 1989 2N2218-2N2219-2N2221-2N2222 THERMAL DATA 2 N22 18 2 N22 19 R t h j- cas e R t h j-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 50 C/W 187.5 C/W 2N 222 1 2N 222 2 83.3 C/W 300 C/W ELECTRICAL CHARACTERISTICS (T amb = 25 C unless otherwise specified) Symbol I CBO I E BO V ( BR) CBO Parameter Collector Cutoff Current (I E = 0) Emitter Cutoff Current (I C = 0) Colllector-base Breakdown Voltage (I E = 0) Collector-emitter Breakdown Voltage (I B = 0) Emittter-base Breakdown Voltage (I C = 0) Collector-emitter Saturation Voltage Base-emitter Saturation Voltage DC Current Gain Test Conditions V CB = 50 V V CB = 50 V VE B = 3 V I C = 10 A I C = 10 mA I E = 10 A I C = 150 mA I C = 500 mA I C = 150 mA I C = 500 mA I B = 15 mA I B = 50 mA I B = 15 mA I B = 50 mA T am b = 150 C Min. Typ. Max. 10 10 10 Unit nA A nA V V V 60 30 5 0.4 1.6 1.3 2.6 20 25 35 40 20 20 35 50 75 100 30 50 250 8 60 V (BR)CE O * V ( BR) V CE VB E EBO (s at )* V V V V (s at )* h F E* for 2N 221 8 and 2N 22 21 I C = 0.1 mA V CE = 10 V I C = 1 mA V CE = 10 V I C = 10 mA V CE = 10 V I C = 150 mA V CE = 10 V I C = 500 mA V CE = 10 V I C = 150 mA V CE = 1 V for 2N 221 9 and 2N 22 22 I C = 0.1 mA V CE = 10 V I C = 1 mA V CE = 10 V I C = 10 mA V CE = 10 V I C = 150 mA V CE = 10 V I C = 500 mA V CE = 10 V I C = 150 mA V CE = 1 V I C = 20 mA f = 100 MHz IE = 0 f = 100 kHz I C = 20 mA f = 300 MHz V CE = 20 V V CB = 10 V V CE = 20 V 120 300 fT C CBO R e (h ie ) Transition Frequency Collector-base Capacitance Real Part of Input Impedance MHz pF * Pulsed : pulse duration = 300 s, duty cycle = 1 %. 2/5 2N2218-2N2219-2N2221-2N2222 TO-18 MECHANICAL DATA mm DIM. MIN. A B D E F G H I L 45o 2.54 1.2 1.16 45o TYP. 12.7 0.49 5.3 4.9 5.8 0.100 0.047 0.045 MAX. MIN. TYP. 0.500 0.019 0.208 0.193 0.228 MAX. inch D G I H E F A L C B 0016043 3/5 2N2218-2N2219-2N2221-2N2222 TO39 MECHANICAL DATA mm DIM. MIN. A B D E F G H I L 5.08 1.2 0.9 45o (typ.) 12.7 0.49 6.6 8.5 9.4 0.200 0.047 0.035 TYP. MAX. MIN. 0.500 0.019 0.260 0.334 0.370 TYP. MAX. inch D G I H E F A L B P008B 4/5 2N2218-2N2219-2N2221-2N2222 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 5/5 |
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