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MITSUBISHI TRANSISTOR MODULES
QM300HA-HB
HIGH POWER SWITCHING USE
INSULATED TYPE
QM300HA-HB
* * * * *
IC Collector current ........................ 300A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................. 750 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271
APPLICATION AC motor controllers, UPS, CVCF, Inverters, DC motor controllers, NC equipment, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
2-M6 2-M4 108MAX. 930.3 E 16
20
4-6.5 E C
62MAX.
C
BX
480.3
BX 9 B
20
B
13
21
29
25.5MAX.
LABEL
36MAX.
41.5MAX.
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM300HA-HB
HIGH POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol VCEX (SUS) VCEX VCBO VEBO IC -IC PC IB -ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage
(Tj=25C, unless otherwise noted)
Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 600 600 600 7 300 300 1560 18 3000 -40~+150 -40~+125 Charged part to case, AC for 1 minute Main terminal screw M6 2500 1.96~2.94 20~30 1.96~2.94 20~30 0.98~1.47 10~15 0.98~1.47 10~15 470 Unit V V V V A A W A A C C V N*m kg*cm N*m kg*cm N*m kg*cm N*m kg*cm g
mounting screw M6 -- Mounting torque B(E) terminal screw M4
BX terminal screw M4 -- Weight Typical value
ELECTRICAL CHARACTERISTICS
Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain
(Tj=25C, unless otherwise noted)
Limits Test conditions VCE=600V, VEB=2V VCB=600V,Emitter open VEB=7V, Collector open IC=300A, IB=400mA IC=-300A (diode forward voltage) IC=300A, VCE=2.5V Min. -- -- -- -- -- -- 750 -- VCC=300V, IC=300A, IB1=600mA, -IB2=6.0A -- -- Transistor part Diode part Conductive grease applied -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 4.0 4.0 300 2.5 3.0 1.8 -- 2.5 10 2.0 0.09 0.3 0.04 Unit mA mA mA V V V -- s s s C/ W C/ W C/ W
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM300HA-HB
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL)
1000 Tj=25C 10 4 7 5 4 3 2 10 3 7 5 4 3 2 10 2 10 1
DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL)
VCE=2.5V
COLLECTOR CURRENT IC (A)
800
600
IB=800mA IB=400mA
400
IB=200mA IB=100mA
200
DC CURRENT GAIN hFE
IB=1.6A
Tj=25C Tj=125C 2 3 4 5 7 10 2 2 3 4 5 7 10 3
0
0
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE
VCE (V)
COLLECTOR CURRENT IC (A)
VCE (sat), VBE (sat) (V)
COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL)
10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 1.6 2.0 2.4 2.8 3.2 3.6 VCE=2.5V Tj=25C
SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
101 7 5 4 3 2 10 0 7 5 4 3 2 VCE(sat)
BASE CURRENT IB (A)
VBE(sat)
SATURATION VOLTAGE
10 -1 10 1
IB=400mA Tj=25C Tj=125C 2 3 4 5 7 10 2 2 3 4 5 7 10 3
BASE-EMITTER VOLTAGE
VBE (V)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V)
5 4 10 1 7 5 4 3 2 10 0 7 5 4 3 2
SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL)
ton, ts, tf (s)
ts
ton
3
IC=500A IC=300A IC=100A
2
SWITCHING TIME
1 0 10 -2 2 3 5 7 10 -1 2 3 5 7 10 0 2 3 5 7 10 1
Tj=25C Tj=125C
tf
10 -1 10 1
VCC=300V IB1=0.6A -IB2=6.0A Tj=25C Tj=125C 2 3 4 5 7 10 3
2 3 4 5 7 10 2
BASE CURRENT IB (A)
COLLECTOR CURRENT
IC (A)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM300HA-HB
HIGH POWER SWITCHING USE
INSULATED TYPE
SWITCHING TIME VS. BASE CURRENT (TYPICAL)
10 2 7 5 3 2 10 1 7 5 3 2 10 0 7 5 3 2 10 -1 10 0 23 5 7 10 1 23 5 7 10 2 VCC=300V IC=300A IB1=0.6A Tj=25C Tj=125C ts tf
REVERSE BIAS SAFE OPERATING AREA
600
COLLECTOR CURRENT IC (A)
ts, tf (s)
Tj=125C -IB2=6A
500 400 300 200 100 0
SWITCHING TIME
0
100
200
300
400
500
600
BASE REVERSE CURRENT -IB2 (A)
COLLECTOR-EMITTER VOLTAGE
VCE (V)
FORWARD BIAS SAFE OPERATING AREA
10 3 7 5 3 2 10 2 7 5 3 2 100 90
DERATING FACTOR OF F. B. S. O. A.
tw=20S 100S
10mS
COLLECTOR CURRENT IC (A)
500S
1mS
DERATING FACTOR (%)
80 70 60 50 40 30 20 10 0 0 20 40 60 COLLECTOR DISSIPATION
SECOND BREAKDOWN AREA
DC
10 1 7 5 3 TC=25C 2 NON-REPETITIVE 10 0 10 0 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 10 3
80 100 120 140 160
COLLECTOR-EMITTER VOLTAGE
VCE (V)
CASE TEMPERATURE
TC (C)
COLLECTOR REVERSE CURRENT -IC (A)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 5 7 10 1 0.1
0.08
Zth (j-c) (C/ W)
10 3 7 5 4 3 2 10 2 7 5 4 3 2
REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL)
0.06
0.04
0.02 0 10 -3 2 3 5 7 10 -2 2 3 5 7 10 -1 2 3 5 7 10 0
10 1 0.2
0.6
1.0
1.4
Tj=25C Tj=125C 1.8 2.2
TIME (s)
COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM300HA-HB
HIGH POWER SWITCHING USE
INSULATED TYPE
RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) 3200
REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10 3 7 VCC=300V 5 IB1=0.6A 3 IB2= -6A Tj=25C 2 Tj=125C 2 10 7 5 3 2 10 1 10 2
2400 Irr (A), Qrr (c)
Irr
10 1 trr (s)
Feb.1999
1600
Qrr
800
0 10 0
2 3 4 5 7 10 1
2 3 4 5 7 10 2
10 0 trr 7 5 3 2 10 0 10 -1 10 0 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 10 3 FORWARD CURRENT IF (A)
CONDUCTION TIME (CYCLES AT 60Hz)
0.40 0.32 Zth (j-c) (C/ W)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 57 10 1 2 3 5 7
0.24
0.16
0.08 0 10 -3 2 3 5 7 10 -2 2 3 5 7 10 -1 2 3 5 7 10 0 TIME (s)

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