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| MITSUBISHI TRANSISTOR MODULES QM15TB-2H MEDIUM POWER SWITCHING USE INSULATED TYPE QM15TB-2H * * * * * IC Collector current .......................... 15A VCEX Collector-emitter voltage ......... 1000V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Inverters, Servo drives, DC motor controllers, CVCF, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 107 81 20 O P P 21.5 17.5 2-5.5 BuP EuP 18 30 21.5 BuP EuP BvP EvP BwPEwP BvP EvP V BvN EvN BwP EwP W BwN EwN 45 21 U N V W U BuN O BuN EuN BvN EvN BwN EwN 7.5 14 7.5 14 7.5 16 93 Tab#110, t=0.5 (Fig. 2) Tab#250, t=0.8 (Fig. 1) EuN N Fig. 1 1.65 8 6.35 Fig. 2 3.8 2.8 3.4 7.95 1.2 7.1 1 28.2 7.5 LABEL 17.5 Note: All Transistor Units are 3-Stage Darlingtons. 1 5.5 Feb.1999 MITSUBISHI TRANSISTOR MODULES QM15TB-2H MEDIUM POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VCEX (SUS) VCEX VCBO VEBO IC -IC PC IB -ICSM Tj Tstg Viso -- -- Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage Mounting torque Weight (Tj=25C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 1000 1000 1000 7 15 15 150 1 150 -40~+150 -40~+125 Charged part to case, AC for 1 minute Mounting screw M5 Typical value 2500 1.47~1.96 15~20 230 Unit V V V V A A W A A C C V N*m kg*cm g ELECTRICAL CHARACTERISTICS Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain (Tj=25C, unless otherwise noted) Limits Test conditions VCE=1000V, VEB=2V VCB=1000V, Emitter open VEB=7V IC=15A, IB=0.3A -IC=15A (diode forward voltage) IC=15A, VCE=2.8V/5V Min. -- -- -- -- -- -- 75/100 -- VCC=600V, IC=15A, IB1=-IB2=0.3A -- -- Transistor part (per 1/6 module) Diode part (per 1/6 module) Conductive grease applied (per 1/6 module) -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 2.0 2.0 100 2.5 3.5 1.5 -- 2.5 15 3.0 0.8 1.2 0.35 Unit mA mA mA V V V -- s s s C/ W C/ W C/ W Feb.1999 MITSUBISHI TRANSISTOR MODULES QM15TB-2H MEDIUM POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) 50 Tj=25C COLLECTOR CURRENT IC (A) 40 DC CURRENT GAIN hFE 10 3 7 5 4 3 2 10 2 7 5 4 3 2 10 0 VCE=2.8V 2 DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) 30 IB=0.4A IB=0.2A IB=0.1A IB=0.06A VCE=5.0V 20 10 IB=0.02A 0 Tj=25C Tj=125C 2 3 4 5 7 10 1 2 3 4 5 7 10 2 COLLECTOR CURRENT IC (A) 0 1 2 3 4 5 VCE (V) COLLECTOR-EMITTER VOLTAGE VCE (sat), VBE (sat) (V) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 1.8 2.2 2.6 3.0 3.4 VBE (V) 3.8 VCE=2.8V Tj=25C SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 1 7 5 4 3 2 BASE CURRENT IB (A) VBE(sat) SATURATION VOLTAGE 10 0 VCE(sat) 7 5 4 3 IB=0.3A 2 Tj=25C Tj=125C 10 -1 0 10 2 3 4 5 7 10 1 2 3 4 5 7 10 2 BASE-EMITTER VOLTAGE COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 5 ton, ts, tf (s) 2 10 1 7 5 4 3 2 SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) 4 ts 3 2 IC=10A IC=15A 1 IC=5A Tj=25C Tj=125C 0 3 4 5 7 10 -2 2 3 4 5 7 10 -1 23 SWITCHING TIME 10 0 7 5 4 3 2 10 0 tf ton Tj=25C Tj=125C VCC=600V IB1=-IB2=0.3A 2 3 4 5 7 10 2 IC (A) 2 3 4 5 7 10 1 BASE CURRENT IB (A) COLLECTOR CURRENT Feb.1999 MITSUBISHI TRANSISTOR MODULES QM15TB-2H MEDIUM POWER SWITCHING USE INSULATED TYPE SWITCHING TIME VS. BASE CURRENT (TYPICAL) 3 2 REVERSE BIAS SAFE OPERATING AREA 40 SWITCHING TIME 10 1 7 5 4 3 2 10 0 7 5 4 3 COLLECTOR CURRENT IC (A) ts, tf (s) ts IB2=-0.5A 30 IB2=-1A 20 tf VCC=600V IB1=0.3A IC=15A Tj=25C Tj=125C 3 4 5 7 10 -1 2 3 4 5 7 10 0 23 10 Tj=125C 0 0 200 400 600 800 1000 BASE REVERSE CURRENT -IB2 (A) COLLECTOR-EMITTER VOLTAGE VCE (V) FORWARD BIAS SAFE OPERATING AREA 10 2 7 5 3 2 10 1 7 5 3 2 100 200s 1m DERATING FACTOR OF F. B. S. O. A. 100s COLLECTOR CURRENT IC (A) 90 SECOND BREAKDOWN AREA D s DERATING FACTOR (%) 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160 COLLECTOR DISSIPATION 500 C 10 0 7 TC=25C 5 NON-REPETITIVE 3 2 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR REVERSE CURRENT -IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 4 5 710 1 2 3 4 5 1.0 s CASE TEMPERATURE TC (C) 0.8 Zth (j-c) (C/ W) 0.6 10 2 7 5 4 3 2 10 1 7 5 4 3 2 10 0 REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) Tj=25C Tj=125C 0.4 0.2 0 10 -3 2 3 4 5 7 10 -2 2 3 4 5 7 10 -12 3 4 5 7 10 0 0 0.4 0.8 1.2 1.6 2.0 TIME (s) COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM15TB-2H MEDIUM POWER SWITCHING USE INSULATED TYPE RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) 200 180 160 REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10 2 7 5 4 3 2 10 1 7 5 4 3 2 10 0 10 0 Irr VCC=600V IB1=-IB2=0.3A 10 1 100 80 60 40 20 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 10 0 trr Qrr 2 3 4 5 7 10 1 10 -1 2 3 4 5 7 10 2 Tj=25C Tj=125C CONDUCTION TIME (CYCLES AT 60Hz) FORWARD CURRENT IF (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 4 5 7 10 1 2 3 4 5 2.0 1.8 1.6 Zth (j-c) (C/ W) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 10 -3 2 3 4 5 7 10 -2 2 3 4 5 7 10 -12 3 4 5 7 10 0 TIME (s) Feb.1999 trr (s) 120 Irr (A), Qrr (c) 140 |
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