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| Infrared Light Emitting Diodes LNA2601L GaAs Infrared Light Emitting Diode Unit : mm 3.50.3 2.4 1.1 0.8 max. 1.1 0.8 For optical control systems Features High-power output, high-efficiency Emitted light spectrum suited for silicon photodetectors Ultra-miniature, thin side-view type package Infrared light emission close to monochromatic light : P = 950 nm 3.00.3 o1.1 R0.5 1.950.25 1.40.2 0.9 0.5 12 min. Not Soldered 2.15 max. 2-0.50.15 0.30.15 2 2.54 1 Absolute Maximum Ratings (Ta = 25C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * Symbol PD IF IFP* VR Topr Tstg Ratings 75 50 1 3 -25 to +85 - 40 to +100 Unit mW mA A V C C 1: Anode 2: Cathode f = 100 Hz, Duty cycle = 0.1 % Electro-Optical Characteristics (Ta = 25C) Parameter Radiant power Peak emission wavelength Spectral half band width Forward voltage (DC) Reverse current (DC) Capacitance between pins Half-power angle Symbol PO P VF IR Ct Conditions IF = 50mA IF = 50mA IF = 50mA IF = 50mA VR = 3V VR = 0V, f = 1MHz The angle in which radiant intencity is 50% min 1.5 typ 950 50 max Unit mW nm nm 1.5 10 35 20 V A pF deg. 1 Infrared Light Emitting Diodes LNA2601L IF -- Ta 60 10 2 IFP -- Duty cycle tw = 10s Ta = 25C 80 70 IF -- VF Ta = 25C IF (mA) IFP (A) 50 IF (mA) Forward current 1 10 10 2 10 60 50 40 30 20 10 Allowable forward current 40 Pulse forward current 30 1 20 10 -1 10 0 - 25 0 20 40 60 80 100 10 -2 10 -1 0 0 0.4 0.8 1.2 1.6 Ambient temperature Ta (C ) Duty cycle (%) Forward voltage VF (V) PO -- IFP 10 2 (1) tw = 10s f = 100Hz (2) DC Ta = 25C 1.6 VF -- Ta 10 3 PO -- Ta IF = 20mA PO VF (V) 10 (1) 1.2 10mA 1mA Relative radiant power 1 (2) 0.8 Relative radiant power 120 Forward voltage PO 10 2 10 - 25 IF = 50mA 10 -1 0.4 10 -2 1 10 10 2 10 3 0 - 40 0 40 80 0 20 40 60 80 100 Pulse forward current IFP (mA) Ambient temperature Ta (C ) Ambient temperature Ta (C ) P -- Ta 1000 IF = 20mA 100 Spectral characteristics IF = 50mA Ta = 25C Directivity characteristics 0 100 90 10 20 Relative radiant intensity (%) 980 80 80 70 Relative radiant intensity (%) P (nm) 30 Peak emission wavelength 960 60 60 50 40 40 50 60 70 80 90 940 40 30 20 20 920 900 - 40 0 40 80 120 0 860 900 940 980 1020 1060 1100 Ambient temperature Ta (C ) Wavelength (nm) 2 |
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