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 MITSUBISHI Nch POWER MOSFET
FS22SM-12A
HIGH-SPEED SWITCHING USE
FS22SM-12A
OUTLINE DRAWING
15.9MAX.
Dimensions in mm
4.5 1.5
5.0
f 3.2
2
2
4
20.0
1.0
5.45
5.45
19.5MIN.
4.4
0.6
2.8
4
G 10V DRIVE G VDSS ................................................................................ 600V G rDS (ON) (MAX) .............................................................. 0.30 G ID ......................................................................................... 22A

GATE DRAIN SOURCE DRAIN
TO-3P
APPLICATION SMPS, AC-adapter, Power supply of Printer, Copier, TV, VCR. etc.
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM IDA PD Tch Tstg --
(Tc = 25C)
Parameter Drain-source voltage Gate-source voltage Drain current VGS = 0V VDS = 0V
Conditions
Ratings 600 30 22 66 22 200 -55 ~ +150 -55 ~ +150 4.8
Unit V V A A A W C C g Sep. 2001
Drain current (Pulsed) Avalanche drain current (Pulsed) L = 200H Maximum power dissipation Channel temperature Storage temperature Weight Typical value
MITSUBISHI Nch POWER MOSFET
FS22SM-12A
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter
(Tch = 25C)
Test conditions ID = 1mA, VGS = 0V IG = 100A, VDS = 0V VGS = 25V, VDS = 0V VDS = 600V, VGS = 0V ID = 1mA, VDS = 10V ID = 11A, VGS = 10V ID = 11A, VGS = 10V ID = 11A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz
Limits Min. 600 30 -- -- 2.5 -- -- 14.4 -- -- -- -- -- -- -- -- -- Typ. -- -- -- -- 3.0 0.23 2.53 24.0 4600 420 100 60 100 630 140 1.5 -- Max. -- -- 10 1 3.5 0.30 3.30 -- -- -- -- -- -- -- -- 2.0 0.625
Unit V V A mA V V S pF pF pF ns ns ns ns V C/W
Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance
VDD = 200V, ID = 11A, VGS = 10V, RGEN = RGS = 50
IS = 11A, VGS = 0V Channel to case
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 250 MAXIMUM SAFE OPERATING AREA
7 5 3 2
POWER DISSIPATION PD (W)
tw = 10s 100s 1ms
10 ms
200
DRAIN CURRENT ID (A)
101
7 5 3 2
150
100
100
7 5 3 2
TC = 25C Single Pulse
DC
50
10-1
7 5 3 2
0
0
50
100
150
200
23
5 7 101
23
5 7 102
23
57
CASE TEMPERATURE TC (C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS (TYPICAL) 50
VGS = 20V,10V,8V,6V
OUTPUT CHARACTERISTICS (TYPICAL) 20
DRAIN CURRENT ID (A)
40
TC = 25C Pulse Test
DRAIN CURRENT ID (A)
16
VGS = 20V,10V,8V,6V,5V PD = 200W
30
5V
12
20
PD = 200W 4V
8
TC = 25C Pulse Test
10
4
4V
0
0
10
20
30
40
50
0
0
4
8
12
16
20
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V) Sep. 2001
MITSUBISHI Nch POWER MOSFET
FS22SM-12A
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 40
TC = 25C Pulse Test
ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 0.5
DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) ()
32
0.4
24
0.3
VGS = 10V
16
ID = 40A 30A 20A 10A
0.2
VGS = 20V
8
0.1
TC = 25C Pulse Test
0
0
4
8
12
16
20
0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A)
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS (TYPICAL) 40 103
7 5 3 2
FORWARD TRANSFER ADMITTANCE VS. DRAIN CURRENT (TYPICAL)
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE yfs (S)
32
102
7 5 3 2
TC = 25C,75C,125C
24
16
101
7 5 3 2 VDS = 10V Pulse Test 2 3 5 7 101 2 3 5 7 102
8
0
TC = 25C VDS = 10V Pulse Test
0
4
8
12
16
20
100 0 10
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL)
104 7 5
SWITCHING CHARACTERISTICS (TYPICAL) 103
Ciss 7 5 td(off)
SWITCHING TIME (ns)
CAPACITANCE Ciss, Coss, Crss (pF)
3 2 103 7 5 3 2 102 7 5 3 2 101
3 2 tf
Coss
102
7 5 3 2 td(on)
tr
Crss TCh = 25C VGS = 0V f = 1MHZ 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3
TCh = 25C VGS = 10V VDD = 200V RGEN = RGS = 50 2 3 5 7 101 2 3 5 7 102
101
100
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN CURRENT ID (A)
Sep. 2001
MITSUBISHI Nch POWER MOSFET
FS22SM-12A
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE VS. GATE CHARGE (TYPICAL) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 40
VGS = 0V Pulse Test TC = 25C 75C 125C
GATE-SOURCE VOLTAGE VGS (V)
20
16
SOURCE CURRENT IS (A)
400
VDS = 100V 200V 400V
32
12
24
8
16
4
TCh = 25C ID = 22A
8
0
0
80
160
240
320
0
0
0.8
1.6
2.4
3.2
4.0
GATE CHARGE Qg (nC)
SOURCE-DRAIN VOLTAGE VSD (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC)
ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101
VGS = 10V 7 ID = 11A 5 Pulse Test 3 2
THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0
VDS = 10V ID = 1mA
GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V)
4.0
3.0
100
7 5 3 2
2.0
1.0
10-1
-50
0
50
100
150
0
-50
0
50
100
150
CHANNEL TEMPERATURE Tch (C)
CHANNEL TEMPERATURE Tch (C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C)
TRANSIENT THERMAL IMPEDANCE Zth (ch-c) (C/W)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC)
BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4
VGS = 0V ID = 1mA
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101
7 5 3 2
1.2
100
7 5 3 2
1.0
D = 1.0 = 0.5 = 0.2 = 0.1 = 0.05 = 0.02 Single Pulse = 0.01 PDM
tw T D= tw T
0.8
10-1
7 5 3 2
0.6
0.4
-50
0
50
100
150
10-2 -4 10 2 3 5 710-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 PULSE WIDTH tw (s)
CHANNEL TEMPERATURE Tch (C)
Sep. 2001


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