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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D252
BGY888 860 MHz, 34 dB gain push-pull amplifier
Product specification Supersedes data of 1999 Mar 30 2001 Oct 25
Philips Semiconductors
Product specification
860 MHz, 34 dB gain push-pull amplifier
FEATURES * Excellent linearity * Extremely low noise * High gain * Excellent return loss properties. APPLICATIONS * Single module line extender in CATV systems operating over a frequency range of 40 to 860 MHz.
handbook, halfpage
BGY888
PINNING SOT115J PIN 1 2, 3 5 7, 8 9 input common +VB common output DESCRIPTION
DESCRIPTION Hybrid high dynamic range amplifier module operating with a voltage supply of 24 V in a SOT115J package. The high gain module consists of two cascaded stages both in cascode configuration.
1
2
3
5
7
8
9
Side view
MSA319
Fig.1 Simplified outline.
QUICK REFERENCE DATA SYMBOL Gp Itot power gain total current consumption (DC) PARAMETER f = 50 MHz f = 860 MHz VB = 24 V CONDITIONS MIN. 33.5 34 - - 340 MAX. 34.5 UNIT dB dB mA
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL Vi Tstg Tmb RF input voltage storage temperature operating mounting base temperature PARAMETER - -40 -20 MIN. MAX. 55 +100 +100 UNIT dBmV C C
2001 Oct 25
2
Philips Semiconductors
Product specification
860 MHz, 34 dB gain push-pull amplifier
CHARACTERISTICS Table 1 Bandwidth 40 to 860 MHz; VB = 24 V; Tcase = 30 C; ZS = ZL = 75 PARAMETER power gain slope cable equivalent flatness of frequency response input return losses f = 50 MHz f = 860 MHz SL FL S11 f = 40 to 860 MHz f = 40 to 860 MHz f = 40 to 80 MHz f = 80 to 160 MHz f = 160 to 320 MHz f = 320 to 640 MHz f = 640 to 860 MHz S22 output return losses f = 40 to 80 MHz f = 80 to 160 MHz f = 160 to 320 MHz f = 320 to 640 MHz f = 640 to 860 MHz S21 CTB Xmod CSO d2 Vo F phase response composite triple beat cross modulation composite second order distortion second order distortion output voltage noise figure f = 50 MHz 49 channels flat; Vo = 44 dBmV; measured at 859.25 MHz 49 channels flat; Vo = 44 dBmV; measured at 55.25 MHz 49 channels flat; Vo = 44 dBmV; measured at 860.5 MHz note 1 dim = -60 dB; note 2 f = 50 MHz f = 550 MHz f = 600 MHz f = 650 MHz f = 750 MHz f = 860 MHz Itot Notes 1. fp = 55.25 MHz; Vp = 44 dBmV; fq = 805.25 MHz; Vq = 44 dBmV; measured at fp + fq = 860.5 MHz. 2. Measured according to DIN45004B: fp = 851.25 MHz; Vp = Vo; fq = 858.25 MHz; Vq = Vo-6 dB; fr = 860.25 MHz; Vr = Vo -6 dB; measured at fp + fq - fr = 849.25 MHz. 3. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V. 2001 Oct 25 3 total current consumption (DC) note 3 CONDITIONS MIN. 33.5 34 0.5 - 20 18.5 17 15.5 14 20 18.5 17 15.5 14 135 - - - - 58 - - - - - - - TYP. 34 35 1.1 0.2 25 28 28 21 18.5 25.5 28.5 26.5 20.5 21 - -63.5 -63 -64 -74 60 4 - - - - 5.5 325
BGY888
SYMBOL Gp
MAX. 34.5 - 2.5 0.5 - - - - - - - - - - 225 -60 -59 -55 -65 - 4.5 5 5 5.5 6 7 340
UNIT dB dB dB dB dB dB dB dB dB dB dB dB dB dB deg dB dB dB dB dBmV dB dB dB dB dB dB mA
Philips Semiconductors
Product specification
860 MHz, 34 dB gain push-pull amplifier
Table 2 Bandwidth 40 to 860 MHz; VB = 24 V; Tcase = 30 C; ZS = ZL = 75 PARAMETER power gain slope cable equivalent flatness of frequency response input return losses f = 50 MHz f = 860 MHz SL FL S11 f = 40 to 860 MHz f = 40 to 860 MHz f = 40 to 80 MHz f = 80 to 160 MHz f = 160 to 320 MHz f = 320 to 640 MHz f = 640 to 860 MHz S22 output return losses f = 40 to 80 MHz f = 80 to 160 MHz f = 160 to 320 MHz f = 320 to 640 MHz f = 640 to 860 MHz S21 CTB Xmod CSO d2 Vo F Itot Notes 1. fp = 55.25 MHz; Vp = 44 dBmV; fq = 805.25 MHz; Vq = 44 dBmV; measured at fp + fq = 860.5 MHz. 2. Measured according to DIN45004B: fp = 851.25 MHz; Vp = Vo; fq = 858.25 MHz; Vq = Vo -6 dB; fr = 860.25 MHz; Vr = Vo -6 dB; measured at fp + fq - fr = 849.25 MHz. 3. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V. phase response composite triple beat cross modulation composite second order distortion second order distortion output voltage noise figure total current consumption (DC) f = 50 MHz 129 channels flat; Vo = 44 dBmV; measured at 859.25 MHz 129 channels flat; Vo = 44 dBmV; measured at 55.25 MHz 129 channels flat; Vo = 44 dBmV; measured at 860.5 MHz note 1 dim = -60 dB; note 2 see Table 1 note 3 CONDITIONS MIN. 33.5 34 0.5 - 20 18.5 17 15.5 14 20 18.5 17 15.5 14 135 - - - - 58 - - TYP. 34 35 1.1 0.2 25 28 28 21 18.5 25.5 28.5 26.5 20.5 21 - -47.5 -53.5 -56 -74 60 - 325
BGY888
SYMBOL Gp
MAX. 34.5 - 2.5 0.5 - - - - - - - - - - 225 -46 -50 -48 -65 - - 340
UNIT dB dB dB dB dB dB dB dB dB dB dB dB dB dB deg dB dB dB dB dBmV dB mA
2001 Oct 25
4
Philips Semiconductors
Product specification
860 MHz, 34 dB gain push-pull amplifier
Table 3 Bandwidth 40 to 750 MHz; VB = 24 V; Tcase = 30 C; ZS = ZL = 75 PARAMETER power gain slope cable equivalent flatness of frequency response input return losses f = 50 MHz f = 750 MHz SL FL S11 f = 40 to 750 MHz f = 40 to 750 MHz f = 40 to 80 MHz f = 80 to 160 MHz f = 160 to 320 MHz f = 320 to 640 MHz f = 640 to 750 MHz S22 output return losses f = 40 to 80 MHz f = 80 to 160 MHz f = 160 to 320 MHz f = 320 to 640 MHz f = 640 to 750 MHz S21 CTB Xmod CSO d2 Vo F Itot Notes 1. fp = 55.25 MHz; Vp = 44 dBmV; fq = 691.25 MHz; Vq = 44 dBmV; measured at fp + fq = 746.5 MHz. 2. Measured according to DIN45004B: fp = 740.25 MHz; Vp = Vo; fq = 747.25 MHz; Vq = Vo-6 dB; fr = 749.25 MHz; Vr = Vo -6 dB; measured at fp + fq - fr = 738.25 MHz. 3. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V. phase response composite triple beat cross modulation composite second order distortion second order distortion output voltage noise figure total current consumption (DC) f = 50 MHz 110 channels flat; Vo = 44 dBmV; measured at 745.25 MHz 110 channels flat; Vo = 44 dBmV; measured at 55.25 MHz 110 channels flat; Vo = 44 dBmV; measured at 746.5 MHz note 1 dim = -60 dB; note 2 see Table 1 note 3 CONDITIONS MIN. 33.5 34 0.2 - 20 18.5 17 15.5 14 20 18.5 17 15.5 14 135 - - - - 59 - - TYP. 34 - - - 25 28 28 21 18.5 25.5 28.5 26.5 20.5 21 - -52.5 -55.5 -61.5 - - - 325
BGY888
SYMBOL Gp
MAX. 34.5 - 2.2 0.45 - - - - - - - - - - 225 -50 -51 -53 -65 - - 340
UNIT dB dB dB dB dB dB dB dB dB dB dB dB dB dB deg dB dB dB dB dBmV dB mA
2001 Oct 25
5
Philips Semiconductors
Product specification
860 MHz, 34 dB gain push-pull amplifier
Table 4 Bandwidth 40 to 600 MHz; VB = 24 V; Tcase = 30 C; ZS = ZL = 75 PARAMETER power gain slope cable equivalent flatness of frequency response input return losses f = 50 MHz f = 600 MHz SL FL S11 f = 40 to 600 MHz f = 40 to 600 MHz f = 40 to 80 MHz f = 80 to 160 MHz f = 160 to 320 MHz f = 320 to 600 MHz S22 output return losses f = 40 to 80 MHz f = 80 to 160 MHz f = 160 to 320 MHz f = 320 to 600 MHz S21 CTB Xmod CSO d2 Vo F Itot Notes 1. fp = 55.25 MHz; Vp = 44 dBmV; fq = 541.25 MHz; Vq = 44 dBmV; measured at fp + fq = 596.5 MHz. 2. Measured according to DIN45004B: fp = 590.25 MHz; Vp = Vo; fq = 597.25 MHz; Vq = Vo -6 dB; fr = 599.25 MHz; Vr = Vo -6 dB; measured at fp + fq - fr = 588.25 MHz. 3. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V. phase response composite triple beat cross modulation composite second order distortion second order distortion output voltage noise figure (DC) total current consumption f = 50MHz 85 channels flat; Vo = 44 dBmV; measured at 595.25 MHz 85 channels flat; Vo = 44 dBmV; measured at 55.25 MHz 85 channels flat; Vo = 44 dBmV; measured at 596.5 MHz note 1 dim = -60 dB; note 2 see Table 1 note 3 CONDITIONS MIN. 33.5 34 0 - 20 18.5 17 16 20 18.5 17 16 135 - - - - 61 - - TYP. 34 - - - 25 28 28 21 25.5 28.5 26.5 20.5 - -56.5 -58 -69.5 - - - 325
BGY888
SYMBOL Gp
MAX. 34.5 - 2 0.35 - - - - - - - - 225 -55 -54 -56 -68 - - 340
UNIT dB dB dB dB dB dB dB dB dB dB dB dB deg dB dB dB dB dBmV dB mA
2001 Oct 25
6
Philips Semiconductors
Product specification
860 MHz, 34 dB gain push-pull amplifier
PACKAGE OUTLINE Rectangular single-ended package; aluminium flange; 2 vertical mounting holes; 2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads
BGY888
SOT115J
D E Z p
A2 1 A L F S W d U2 B yMB p Q e e1 q2 q1 yMB yMB b wM 2 3 5 7 8 9
c
U1
q
0
5 scale
10 mm
DIMENSIONS (mm are the original dimensions) UNIT A2 A max. max. 9.1 b c d D E max. max. max. e e1 F L min. 8.8 p 4.15 3.85 Q max. 2.4 q q1 q2 S U1 U2 max. 8 W w y 0.1 Z max. 3.8
mm 20.8
0.51 0.25 27.2 2.54 13.75 2.54 5.08 12.7 0.38
38.1 25.4 10.2
4.2 44.75
6-32 0.25 UNC
OUTLINE VERSION SOT115J
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 99-02-06
2001 Oct 25
7
Philips Semiconductors
Product specification
860 MHz, 34 dB gain push-pull amplifier
DATA SHEET STATUS DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2) Development DEFINITIONS
BGY888
This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A.
Preliminary data
Qualification
Product data
Production
Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2001 Oct 25
8
Philips Semiconductors
Product specification
860 MHz, 34 dB gain push-pull amplifier
NOTES
BGY888
2001 Oct 25
9
Philips Semiconductors
Product specification
860 MHz, 34 dB gain push-pull amplifier
NOTES
BGY888
2001 Oct 25
10
Philips Semiconductors
Product specification
860 MHz, 34 dB gain push-pull amplifier
NOTES
BGY888
2001 Oct 25
11
Philips Semiconductors - a worldwide company
Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
(c) Koninklijke Philips Electronics N.V. 2001
SCA73
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613518/05/pp12
Date of release: 2001
Oct 25
Document order number:
9397 750 08823

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