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| BF 660W PNP Silicon RF Transistor * For VHF oscillator applications Type BF 660W Marking Ordering Code LEs Q62702-F1568 Pin Configuration 1=B 2=E 3=C Package SOT-323 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 30 40 4 25 5 mW 280 150 - 65 ... + 150 C mA Unit V VCEO VCBO VEBO IC IB Ptot Tj Tstg TS 93 C Junction temperature Storage temperature Thermal Resistance Junction - soldering point RthJS 205 K/W Semiconductor Group 1 Aug-14-1996 BF 660W Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 30 - V IC = 1 mA, IB = 0 Collector-base breakdown voltage V(BR)CBO 40 IC = 10 A, IE = 0 Base-emitter breakdown voltage V(BR)EBO 4 IE = 10 A, IC = 0 Collector-base cutoff current ICBO 50 nA 30 - VCB = 20 , IE = 0 DC current gain hFE IC = 3 mA, VCE = 10 V AC Characteristics Transition frequency fT 700 0.4 0.15 - MHz pF - IC = 5 mA, VCE = 10 V, f = 100 MHz Collector-base capacitance Ccb Cce - VCB = 10 V, VBE = vbe = 0 , f = 1 MHz Collector-emitter capacitance VCE = 10 V, VBE = vbe = 0 , f = 1 MHz Semiconductor Group 2 Aug-14-1996 BF 660W Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 300 mW Ptot 200 TS 150 TA 100 50 0 0 20 40 60 80 100 120 C 150 TA ,TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax/PtotDC = f (tp) 10 3 10 2 K/W RthJS 10 2 Ptotmax/PtotDC D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 s 10 \undefined &SYMBOL.TP -1 0 Semiconductor Group 3 Aug-14-1996 BF 660W Transition frequency fT = f (IC) f = 100MHz VCE = 10V Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1MHz Package Semiconductor Group 4 Aug-14-1996 |
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