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| BBY 53-03W Silicon Tuning Diode Preliminary data * High Q hyperabrupt tuning diode * Designed for low tuning voltage operation for VCO's in mobile communications equipment * High ratio at low reverse voltage Type BBY 53-03W Marking Ordering Code white/5 Q62702-B0825 Pin Configuration 1=C 2=A Package SOD-323 Maximum Ratings Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol Values 6 20 - 55 ... + 150 - 55 ... + 150 Unit V mA C VR IF Top Tstg Semiconductor Group 1 Sep-11-1996 BBY 53-03W Electrical Characteristics at TA=25C, unless otherwise specified Parameter Symbol min. DC characteristics Reverse current Values typ. max. Unit IR 10 200 nA VR = 4 V, TA = 25 C VR = 4 V, TA = 65 C AC characteristics Diode capacitance CT 4.8 1.85 5.3 2.4 2.2 0.37 0.12 2 5.8 3.1 pF VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz Capacitance ratio CT1/CT3 1.8 2.6 pF nH - VR = 1 V, VR = 3 V, f = 1 MHz Series resistance rs CC Ls VR = 1 V, f = 1 GHz Case capacitance f = 1 MHz Series inductance chip to ground Semiconductor Group 2 Sep-11-1996 BBY 53-03W Diode capacitance CT = f (VR) f = 1MHz 6 pF CT 4 3 2 1 0 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 V VR 3.0 Package Semiconductor Group 3 Sep-11-1996 |
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