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Transistor
2SC2671(F)
Silicon NPN epitaxial planer type
For UHF band low-noise amplification
Unit: mm
5.00.2 4.00.2
q q q
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature
*REB
(Ta=25C)
Ratings 15 14 2 80 600 150 -55 ~ +150 Unit V V V mA mW C C
2.540.15 123 0.45 -0.1 1.27
+0.2
Symbol VCBO VCER* VEBO IC PC Tj Tstg
13.50.5
Low noise figure NF. High gain. High transition frequency fT.
5.10.2
s Features
0.45 -0.1
1.27
+0.2
2.30.2
1:Base 2:Emitter 3:Collector JEDEC:TO-92 EIAJ:SC-43A
= 1k
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Transition frequency Collector output capacitance Foward transfer gain Maximum unilateral power gain Noise figure
(Ta=25C)
Symbol ICBO IEBO hFE fT* Cob* | S21e NF* |2 GUM* Conditions VCB = 10V, IE = 0 VEB = 1V, IC = 0 VCE = 8V, IC = 40mA VCE = 8V, IC = 40mA, f = 800MHz VCB = 10V, IE = 0, f = 1MHz VCE = 8V, IC = 40mA, f = 800MHz VCE = 8V, IC = 40mA, f = 800MHz VCE = 8V, IC = 40mA, f = 800MHz VCE = 8V, IC = 40mA, f1 = 200MHz f2 = 500MHz, VO = 100dB/75 VCE = 8V, IC = 40mA, f1 = 600MHz f2 = 500MHz, VO = 100dB/75 50 9 10 50 3.5 150 5.5 0.8 12 13 2.0 60 15 3.2 1.5 min typ max 1 1 300 GHz pF dB dB dB dB Unit A A
Second inter modulation distortion IM2* Third inter modulation distortion
*LTPD
IM3*
75
86
dB
= 10%
1
Transistor
PC -- Ta
1.0 60
2SC2671(F)
IC -- VCE
IB=400A 120 Ta=25C 350A 300A 40 250A 200A 30 150A 20 100A 50A 100 VCE=8V
IC -- VBE
Collector power dissipation PC (W)
Collector current IC (mA)
Collector current IC (mA)
0.8
50
80 Ta=75C 60
25C -25C
0.6
0.4
40
0.2
10
20
0 0 40 80 120 160 200 240
0 0 2 4 6 8 10 12
0 0 0.4 0.8 1.2 1.6 2.0
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Base to emitter voltage VBE (V)
VCE(sat) -- IC
Collector to emitter saturation voltage VCE(sat) (V)
100 30 10 3 1 0.3 Ta=75C, 25C, -25C 0.1 0.03 0.01 0.1 IC/IB=10 600
hFE -- IC
12 VCE=8V
fT -- I E
VCB=8V f=800MHz Ta=25C
Forward current transfer ratio hFE
500
Transition frequency fT (MHz)
10 30 100
10
400 Ta=75C 300 25C 200 -25C 100
8
6
4
2
0.3
1
3
10
30
100
0 0.1
0.3
1
3
0 - 0.1 - 0.3
-1
-3
-10
-30
-100
Collector current IC (mA)
Collector current IC (mA)
Emitter current IE (mA)
Cob -- VCB
Collector output capacitance Cob (pF)
IE=0 f=1MHz Ta=25C
GUM -- IC
Maximum unilateral power gain GUM (dB)
24 VCE=8V f=800MHz Ta=25C 12
NF -- IC
VCE=8V (Rg=50) f=800MHz Ta=25C
2.4
2.0
20
10
1.6
16
Noise figure NF (dB)
0.3 1 3 10 30 100
8
1.2
12
6
0.8
8
4
0.4
4
2
0 0.1
0.3
1
3
10
30
100
0 0.1
0 0.1
0.3
1
3
10
30
100
Collector to base voltage VCB (V)
Collector current IC (mA)
Collector current IC (mA)
2

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