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| 2N/SST5484 Series N-Channel JFETs 2N5484 2N5485 2N5486 Product Summary Part Number 2N/SST5484 2N/SST5485 2N/SST5486 SST5484 SST5485 SST5486 VGS(off) (V) -0.3 to -3 -0.5 to -4 -2 to -6 V(BR)GSS Min (V) -25 -25 -25 gfs Min (mS) 3 3.5 4 IDSS Min (mA) 1 4 8 Features D Excellent High-Frequency Gain: Gps 13 dB (typ) @ 400 MHz - 5485/6 D Very Low Noise: 2.5 dB (typ) @ 400 MHz - 5485/6 D Very Low Distortion D High AC/DC Switch Off-Isolation Benefits D D D D D Wideband High Gain Very High System Sensitivity High Quality of Amplification High-Speed Switching Capability High Low-Level Signal Amplification Applications D D D D High-Frequency Amplifier/Mixer Oscillator Sample-and-Hold Very Low Capacitance Switches Description The 2N/SST5484 series consists of n-channel JFETs designed to provide high-performance amplification, especially at high frequencies up to and beyond 400 MHz. TO-226AA (TO-92) D S G 1 D 1 3 2 S 2 G The 2N series, TO-226AA (TO-92), and SST series, TO-236 (SOT-23), packages provide low-cost options and are available with tape-and-reel to support automated assembly (see Packaging Information). TO-236 (SOT-23) 3 Top View 2N5484 2N5485 2N5486 Top View SST5484 (H4)* SST5485 (H5)* SST5486 (H6)* *Marking Code for TO-236 Absolute Maximum Ratings Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . -25 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA Lead Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300_C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 150_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . -55 to 150_C Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW Notes a. Derate 2.8 mW/_C above 25_C Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70246. Applications information may also be obtained via FaxBack, request document #70595 and #70598. Siliconix P-37410--Rev. D, 04-Jul-94 1 2N/SST5484 Series Specificationsa for 2N Series Limits 2N5484 2N5485 2N5486 Parameter Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentc Gate Reverse Current Gate Operating Currentd Gate-Source Forward Voltaged Symbol Test Conditions Typb Min Max Min Max Min Max Unit V(BR)GSS VGS(off) IDSS IGSS IG VGS(F) IG = -1 mA , VDS = 0 V VDS = 15 V, ID = 10 nA VDS = 15 V, VGS = 0 V VGS = -20 V, VDS = 0 V TA = 100_C VDG = 10 V, ID = 1 mA IG = 10 mA , VDS = 0 V -35 -25 -0.3 1 -3 5 -1 -200 -25 -0.5 4 -4 10 -1 -200 -25 -2 8 -6 20 -1 -200 V mA nA pA V -0.002 -0.2 -20 0.8 Dynamic Common-Source Forward Transconductance c Common-Source Output Conductancec Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Common-Source Output Capacitance Equivalent Input Noise Voltaged gfs gos Ciss Crss Coss en VDS = 15 V, VGS = 0 V f = 100 Hz VDS = 15 V, VGS = 0 V f = 1 MHz VDS = 15 V, VGS = 0 V S f = 1 kHz 3 6 50 2.2 0.7 1 10 5 1 2 3.5 7 60 5 1 2 4 8 75 5 1 2 nV Hz pF mS mS High-Frequency Common-Source Transconductance Common-Source Output Conductance Common-Source Input Conductance Yf (RE) fs(RE) Yos(RE) (RE) Yi (RE) is(RE) VDS = 15 V S VGS = 0 V f = 100 MHz f = 400 MHz f = 100 MHz f = 400 MHz f = 100 MHz f = 400 MHz VDS = 15 V, ID = 1 mA f = 100 MHz C S Common-Source P Power G i Gain Gps VDS = 15 V S ID = 4 mA f = 100 MHz f = 400 MHz 5.5 5.5 45 65 0.05 0.8 20 21 13 0.3 2 1 2.5 2.5 3 2 4 2 4 16 25 18 10 30 20 2.5 18 10 30 20 2.5 dB 0.1 1 1 75 100 100 2.5 3 3.5 mS mS mS VDS = 15 V, VGS = 0 V RG = 1 MW, f = 1 kHz Noise Figure NF VDS = 15 V, ID = 1 mA RG = 1 kW, f = 100 MHz VDS = 15 V ID = 4 mA RG = 1 kW f = 100 MHz f = 400 MHz 2 Siliconix P-37410--Rev. D, 04-Jul-94 2N/SST5484 Series Specificationsa for SST Series Limits SST5484 SST5485 SST5486 Parameter Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentc Gate Reverse Current Gate Operating Currentd Gate-Source Forward Voltaged Symbol Test Conditions Typb Min Max Min Max Min Max Unit V(BR)GSS VGS(off) IDSS IGSS IG VGS(F) IG = -1 mA , VDS = 0 V VDS = 15 V, ID = 10 nA VDS = 15 V, VGS = 0 V VGS = -20 V, VDS = 0 V TA = 100_C VDG = 10 V, ID = 1 mA IG = 10 mA , VDS = 0 V -35 -25 -0.3 1 -3 5 -1 -200 -25 -0.5 4 -4 10 -1 -200 -25 -2 8 -6 20 -1 -200 V mA nA pA V -0.002 -0.2 -20 0.8 Dynamic Common-Source Forward Transconductance c Common-Source Output Conductancec Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Common-Source Output Capacitance Equivalent Input Noise Voltaged gfs gos Ciss Crss Coss en VDS = 15 V, VGS = 0 V f = 100 Hz VDS = 15 V, VGS = 0 V f = 1 MHz VDS = 15 V, VGS = 0 V S f = 1 kHz 3 6 50 2.2 3.5 7 60 4 8 75 mS mS 0.7 pF 1 10 nV Hz High-Frequency Common-Source Transconductance Common-Source Output Conductance Common-Source Input Conductance Yf fs Yos Yi is VDS = 15 V S VGS = 0 V f = 100 MHz f = 400 MHz f = 100 MHz f = 400 MHz f = 100 MHz f = 400 MHz VDS = 15 V, ID = 1 mA f = 100 MHz Gps VDS = 15 V S ID = 4 mA f = 100 MHz f = 400 MHz 5.5 5.5 45 65 0.05 0.8 20 21 13 0.3 2 1 2.5 dB mS mS mS Common Source Common-Source Power Gain VDS = 15 V, VGS = 0 V RG = 1 MW, f = 1 kHz Noise Figure NF VDS = 15 V, ID = 1 mA RG = 1 kW, f = 100 MHz VDS = 15 V ID = 4 mA RG = 1 kW f = 100 MHz f = 400 MHz Notes a. TA = 25_C unless otherwise noted. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. c. Pulse test: PW v300 ms duty cycle v3%. d. This parameter not registered with JEDEC. NH Siliconix P-37410--Rev. D, 04-Jul-94 3 2N/SST5484 Series Typical Characteristics 20 I DSS - Saturation Drain Current (mA) Drain Current and Transconductance vs. Gate-Source Cutoff Voltage 10 rDS(on) - Drain-Source On-Resistance ( W ) g fs - Forward Transconductance (mS) 500 On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage rDS @ ID = 1 mA, VGS = 0 V gos @ VDS = 10 V, VGS = 0 V f = 1 kHz 100 g fs - Forward Transconductance ( m S) 16 IDSS 8 400 80 12 gfs 6 300 rDS gos 60 8 4 200 40 4 IDSS @ VDS = 10 V, VGS = 0 V gfs @ VDS = 10 V, VGS = 0 V f = 1 kHz 0 -2 -4 -6 -8 -10 2 100 20 0 VGS(off) - Gate-Source Cutoff Voltage (V) 0 0 0 -2 -4 -6 -8 -10 VGS(off) - Gate-Source Cutoff Voltage (V) 0 Gate Leakage Current 100 nA 10 nA I G - Gate Leakage 1 nA 100 pA 10 pA 1 pA 0.1 pA 0 4 8 12 16 20 VDG - Drain-Gate Voltage (V) TA = 25_C TA = 125_C IGSS @ 125_C 1 mA 0.1 mA IGSS @ 25_C ID = 5 mA 1 mA 0.1 mA g fs - Forward Transconductance (mS) 10 Common-Source Forward Transconductance vs. Drain Current VGS(off) = -3 V VDS = 10 V f = 1 kHz 8 TA = -55_C 6 25_C 4 ID = 5 mA 125_C 2 0 0.1 1 ID - Drain Current (mA) 10 Output Characteristics 10 VGS(off) = -2 V 8 I D - Drain Current (mA) VGS = 0 V 6 -0.2 V -0.4 V 4 -0.6 V -0.8 V -1.0 V -1.2 V -1.4 V 8 I D - Drain Current (mA) 12 15 Output Characteristics VGS(off) = -3 V VGS = 0 V 9 -0.3 V -0.6 V 6 -0.9 V -1.2 V 3 -1.5 V -1.8 V 2 0 0 2 4 6 0 10 0 2 4 6 8 10 VDS - Drain-Source Voltage (V) VDS - Drain-Source Voltage (V) 4 Siliconix P-37410--Rev. D, 04-Jul-94 2N/SST5484 Series Typical Characteristics (Cont'd) Transfer Characteristics 10 VGS(off) = -2 V 8 I D - Drain Current (mA) TA = -55_C 6 125_C 25_C I D - Drain Current (mA) VDS = 10 V 8 10 VGS(off) = -3 V TA = -55_C 25_C 6 125_C 4 VDS = 10 V Transfer Characteristics 4 2 2 0 0 -0.4 -0.8 -1.2 -1.6 -2 VGS - Gate-Source Voltage (V) 0 0 -0.6 -1.2 -1.8 -2.4 -3 VGS - Gate-Source Voltage (V) Transconductance vs. Gate-Source Voltage 10 VGS(off) = -2 V g fs - Forward Transconductance (mS) 8 TA = -55_C 6 25_C g fs - Forward Transconductance (mS) VDS = 10 V f = 1 kHz 10 Transconductance vs. Gate-Source Voltgage VGS(off) = -3 V 8 TA = -55_C 6 25_C VDS = 10 V f = 1 kHz 4 125_C 4 125_C 2 2 0 0 -0.4 -0.8 -1.2 -1.6 -2 VGS - Gate-Source Voltage (V) 0 0 -0.6 -1.2 -1.8 -2.4 -3 VGS - Gate-Source Voltage (V) On-Resistance vs. Drain Current 300 rDS(on) - Drain-Source On-Resistance ( W ) TA = 25_C 240 VGS(off) = -2 V 180 -3 V 120 A V - Voltage Gain 80 100 Circuit Voltage Gain vs. Drain Current g fs R L AV + 1 ) R g L os Assume VDD = 15 V, VDS = 5 V 10 V RL + I D 60 40 VGS(off) = -2 V 60 20 -3 V 0 0.1 0 1 ID - Drain Current (mA) 10 0.1 1 ID - Drain Current (mA) 10 Siliconix P-37410--Rev. D, 04-Jul-94 5 2N/SST5484 Series Typical Characteristics (Cont'd) 5 Common-Source Input Capacitance vs. Gate-Source Voltage f = 1 MHz C rss - Reverse Feedback Capacitance (pF) 3 Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage f = 1 MHz C iss - Input Capacitance (pF) 4 2.4 3 VDS = 0 V 1.8 VDS = 0 V 2 10 V 1 1.2 10 V 0.6 0 0 -4 -8 -12 -16 -20 VGS - Gate-Source Voltage (V) 0 0 -4 -8 -12 -16 -20 VGS - Gate-Source Voltage (V) 100 Input Admittance TA = 25_C VDS = 15 V VGS = 0 V Common Source 100 Forward Admittance TA = 25_C VDS = 15 V VGS = 0 V Common Source bis 10 (mS) gis 10 (mS) gfs -bfs 1 1 0.1 100 200 500 1000 0.1 100 200 500 1000 f - Frequency (MHz) f - Frequency (MHz) Reverse Admittance 10 TA = 25_C VDS = 15 V VGS = 0 V Common Source 10 -brs 1 (mS) Output Admittance TA = 25_C VDS = 15 V VGS = 0 V Common Source bos 1 (mS) -grs 0.1 0.1 gos 0.01 100 0.01 200 500 1000 100 200 500 1000 f - Frequency (MHz) f - Frequency (MHz) 6 Siliconix P-37410--Rev. D, 04-Jul-94 2N/SST5484 Series Typical Characteristics (Cont'd) 20 Equivalent Input Noise Voltage vs. Frequency VGS(off) = -3 V VDS = 10 V g os - Output Conductance ( mS) 20 Output Conductance vs. Drain Current VGS(off) = -3 V VDS = 10 V f = 1 kHz (nV / Hz) 16 16 TA = -55_C 12 25_C 125_C 4 12 e n - Noise Voltage 8 ID = 5 mA ID = IDSS 0 10 100 1k f - Frequency (Hz) 10 k 100 k 8 4 0 0.1 1 ID - Drain Current (mA) 10 Siliconix P-37410--Rev. D, 04-Jul-94 7 |
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