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2SK2897-01
FAP-IIIB Series
> Features
High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated
N-channel MOS-FET
60V
0,02
45A
40W
> Outline Drawing
> Applications
- Motor Control - General Purpose Power Amplifier - DC-DC converters
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25C), unless otherwise specified
Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Maximum Avalanche Energy Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) V GS E AV PD T ch T stg Rating 60 45 185 20 461.9 40 150 -55 ~ +150
L=0.304mH,Vcc=24V
Unit V A A V mJ* W C C
- Electrical Characteristics (TC=25C), unless otherwise specified
Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol BV DSS V GS(th) I DSS I R g C C C t t t t I V t Q
GSS DS(on)
fs iss oss rss d(on) r d(off) f AV SD rr rr
Test conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=60V Tch=25C VGS=0V Tch=125C VGS=20V VDS=0V ID=22,5A VGS=4V ID=22,5A VGS=10V ID=22,5A VDS=25V VDS=25V VGS=0V f=1MHz VCC=30V VGS=10V ID=45A RGS=10 Tch=25C L = 100H IF=45A VGS=0V Tch=25C IF=45A VGS=0V -dI/dt=100A/s Tch=25C
Min. 60 1,0
Typ. 1,5 10 0,2 10 15
Max. 2,0 500 1,0 100 20
10
15 35 2900 930 260 13 35 190 75 0,95 55 0,10
12
4350 1400 390 30 50 290 140 1,43
45
Unit V V A mA nA m m S pF pF pF ns ns ns ns A V ns C
- Thermal Characteristics Item Thermal Resistance
R R
th(ch-c) th(ch-a)
Symbol channel to case channel to ambient
Min.
Typ.
Max. 3,125 62,5
Unit C/W C/W
N-channel MOS-FET
60V
2SK2897-01
FAP-IIIB Series
Drain-Source On-State Resistance vs. Tch
RDS(on) = f(Tch); ID=22,5A; VGS=10V
0,02
45A
40W
> Characteristics
Typical Output Characteristics
ID=f(VDS); 80s pulse test; TC=25C
Typical Transfer Characteristics
ID=f(VGS); 80s pulse test; VDS=25V; Tch=25C
ID [A]
1
RDS(ON) [m]
2
ID [A]
3
VDS [V]
Tch [C]
VGS [V]
Typical Drain-Source On-State-Resistance vs. ID
RDS(on)=f(ID); 80s pulse test; TC=25C
Typical Forward Transconductance vs. ID
gfs=f(ID); 80s pulse test; VDS=25V; Tch=25C
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch); ID=1mA; VDS=VGS
RDS(ON) [m]
gfs [S]
5
VGS(th) [V]
4
6
ID [A]
ID [A]
Tch [C]
Typical Capacitances vs. VDS
C=f(VDS); VGS=0V; f=1MHz
Typical Gate Charge Characteristic
VGS=f(Qg); ID=45A; TC=25C
Forward Characteristics of Reverse Diode
IF=f(VSD); 80s pulse test; Tch=25C
C [F]
VDS [V]
VGS [V]
IF [A]
7
8
9
VDS [V]
Qg [nC]
VSD [V]
Maximum Avalanche Energy vs. starting Tch
Eas=f(starting Tch): VCC=24V; IAV 45A
Safe Operation Area
ID=f(VDS): D=0,01, Tc=25C
Transient Thermal impedance
EAV [mJ]
10
ID [A]
12
Zth(ch-c) [K/W]
Zthch=f(t) parameter:D=t/T
starting Tch [C]
VDS [V]
t [s]
This specification is subject to change without notice!
N-channel MOS-FET
60V
0,02 45A
2SK2897-01
FAP-IIIB Series
Typical Switching Characteristics
t=f(ID): VCC = 30V, VGS = 10V, RG = 10
40W
> Characteristics
t [ns]
VSD [V]
Power Dissipation PD=f(TC)
125 100 PD / PDmax [%] 75 50 25 0 0 25 50 75 TC [C] 100 125 150
Maximum Avalanche Current vs. starting Tch IAV=f(starting Tch)
120 100 IAV / IAVmax [%] 80 60 40 20 0 0 25 50 75 starting Tch [C] 100 125 150
This specification is subject to change without notice!

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