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| SI4501DY New Product Vishay Siliconix Complementary MOSFET Half-Bridge (N- and P-Channel) PRODUCT SUMMARY VDS (V) N-Channel N Channel 30 rDS(on) (W) 0.018 @ VGS = 10 V 0.027 @ VGS = 4.5 V 0.042 @ VGS = - 4.5 V 0.060 @ VGS = - 2.5 V ID (A) "9 "7.4 "6.2 "5.2 P-Channel P Channel -8 S2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View 8 7 6 5 D D D D G2 D G1 S1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Current Continuous Source Current (Diode Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range Conduction)a, b TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg N-Channel 30 "20 "9 "7.4 "30 1.7 2.5 1.6 P-Channel -8 "8 "6.2 "5.0 "20 - 1.7 Unit V A W _C - 55 to 150 THERMAL RESISTANCE RATINGS N-Channel Parameter t v 10 sec Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot Notes a. Surface Mounted on FR4 Board. b. t v 10 sec Document Number: 70934 S-61812--Rev. B, 19-Jul-99 www.vishay.com Steady-State Steady-State RthJA RthJC P- Channel Typ 40 73 20 Symbol Typ 38 73 17 Max 50 95 22 Max 50 95 26 Unit _C/W C/W 2-1 SI4501DY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage VGS( h) GS(th) VDS = VGS, ID = 250 mA VDS = VGS, ID = - 250 mA VDS = 0 V, VGS = "20 V VDS = 0 V, VGS = "8 V VDS = 24 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = - 6.4 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 55_C VDS = - 6.4 V, VGS = 0 V, TJ = 55_C On-State On State Drain Currentb ID( ) D(on) VDS = 5 V, VGS = 10 V VDS = - 5 V, VGS = - 4.5 V VGS = 10 V, ID = 9 A Drain-Source On-State Drain Source On State Resistanceb rDS( ) DS(on) VGS = - 4.5 V, ID = - 6.2 A VGS = 4.5 V, ID = 7.4 A VGS = - 2.5 V, ID = - 5.2 A Forward Transconductanceb gf fs VDS = 15 V, ID = 9 A VDS = - 15 V, ID = - 6.2 A IS = 1.7 A, VGS = 0 V IS = - 1.7 A, VGS = 0 V N Ch N-Ch P-Ch N Ch N-Ch P-Ch N Ch N-Ch P-Ch N Ch N-Ch P-Ch N Ch N-Ch P-Ch N Ch N-Ch P-Ch N Ch N-Ch P-Ch N Ch N-Ch P-Ch N Ch N-Ch P-Ch 30 - 20 0.015 0.034 0.022 0.048 20 14 0.71 - 0.70 1.1 - 1.1 V S 0.018 0.042 0.027 0.060 W A 0.8 - 0.45 "100 "100 1 -1 5 -5 mA V Symbol Test Condition Min Typa Max Unit Gate-Body Gate Body Leakage IGSS nA Diode Forward Voltageb VSD Dynamica Total Gate Charge Qg N-Channel VDS = 15 V, VGS = 5 V, ID = 9 A Gate-Source Gate Source Charge Qgs P Channel P-Channel VDS = - 4 V, VGS = - 5 V, ID = - 6.2 A V V 62 Gate-Drain Gate Drain Charge Qgd d N Ch N-Ch P-Ch N Ch N-Ch P-Ch N Ch N-Ch P-Ch N Ch N-Ch P-Ch N-Channel N Ch l VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W P-Channel VDD = - 4 V, RL = 4 W V ID ^ - 1 A, VGEN = - 4.5 V, RG = 6 W N Ch N-Ch P-Ch N Ch N-Ch P-Ch N Ch N-Ch P-Ch IF = 1 7 A di/dt = 100 A/ms 1.7 A, N Ch N-Ch P-Ch 4.5 15 3.3 3.0 6.6 2.0 13 20 9 50 35 110 17 60 35 60 20 40 18 100 50 220 30 120 70 100 ns nC 20 25 Turn-On Turn On Delay Time td( ) d(on) Rise Time tr Turn-Off Turn Off Delay Time td( ff) d(off) Fall Time tf Source-Drain Source Drain Reverse Recovery Time trr Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. www.vishay.com 2-2 Document Number: 70934 S-61812--Rev. B, 19-Jul-99 SI4501DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 50 VGS = 10 thru 4 V 40 I D - Drain Current (A) I D - Drain Current (A) 40 50 Vishay Siliconix NCHANNEL Transfer Characteristics 30 30 20 3V 20 TC = 125_C 10 25_C - 55_C 10 0 0 2 4 6 8 10 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.05 1800 Capacitance DS(on) - On-Resistance ( W ) C - Capacitance (pF) 0.04 1500 Ciss 1200 0.03 VGS = 4.5 V 0.02 900 VGS = 10 V 600 Coss r 0.01 300 Crss 0.00 0 6 12 18 24 30 0 0 6 12 18 24 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 11 A 8 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0 0 5 10 15 20 25 Qg - Total Gate Charge (nC) Document Number: 70934 S-61812--Rev. B, 19-Jul-99 0.4 - 50 On-Resistance vs. Junction Temperature VGS = 10 V ID = 11 A 6 4 2 r DS(on) - On-Resistance (W) (Normalized) - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) www.vishay.com 2-3 SI4501DY Vishay Siliconix New Product NCHANNEL On-Resistance vs. Gate-to-Source Voltage 0.10 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 50 DS(on) - On-Resistance ( W ) 0.08 ID = 4.5 A 0.06 I S - Source Current (A) TJ = 150_C 10 TJ = 25_C 0.04 0.02 r 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.6 0.4 V GS(th) Variance (V) 0.2 - 0.0 - 0.2 - 0.4 - 0.6 - 0.8 - 1.0 - 50 0 - 25 0 25 50 75 100 TJ - Temperature (_C) 125 150 0.01 10 ID = 250 mA Power (W) 30 50 Single Pulse Power 40 20 0.1 1 Time (sec) 10 30 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 73_C/W t1 t2 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 10 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 100 600 www.vishay.com 2-4 Document Number: 70934 S-61812--Rev. B, 19-Jul-99 SI4501DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Vishay Siliconix NCHANNEL Normalized Thermal Transient Impedance, Junction-to-Foot 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 2.5 V 16 VGS = 5 thru 3 V I D - Drain Current (A) 12 2V I D - Drain Current (A) 12 16 25_C 20 TC = - 55_C PCHANNEL Transfer Characteristics 125_C 8 1.8 V 8 4 1.5 V 4 1V 0 0 1 2 3 4 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.20 VGS = 1.8 V r DS(on) - On-Resistance ( W ) 0.16 C - Capacitance (pF) 2000 2500 Capacitance Ciss 0.12 1500 0.08 VGS = 2.5 V VGS = 4.5 V 1000 Coss 500 Crss 0.04 0.00 0 4 8 12 16 20 0 0 2 4 6 8 ID - Drain Current (A) Document Number: 70934 S-61812--Rev. B, 19-Jul-99 VDS - Drain-to-Source Voltage (V) www.vishay.com 2-5 SI4501DY Vishay Siliconix New Product PCHANNEL On-Resistance vs. Junction Temperature 1.50 VDS = 4 V ID = 5.6 A VGS = 4.5 V ID = 5.6 A 1.25 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Gate Charge 5 V GS - Gate-to-Source Voltage (V) 3 2 r DS(on) - On-Resistance (W) (Normalized) 4 1.00 1 0 0 4 8 12 16 0.75 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) 20 Source-Drain Diode Forward Voltage 0.20 On-Resistance vs. Gate-to-Source Voltage TJ = 150_C r DS(on)- On-Resistance ( W ) 10 I S - Source Current (A) 0.16 0.12 ID = 5.6 A 0.08 TJ = 25_C 0.04 1 0.00 0.25 0.50 0.75 1.00 1.25 1.50 0.00 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.4 80 Single Pulse Power, Juncion-To-Ambient 60 V GS(th) Variance (V) 0.2 ID = 250 mA Power (W) 40 0.0 20 - 0.2 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 Time (sec) 1 10 TJ - Temperature (_C) www.vishay.com 2-6 Document Number: 70934 S-61812--Rev. B, 19-Jul-99 SI4501DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance Vishay Siliconix PCHANNEL 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 73_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 600 Square Wave Pulse Duration (sec) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Foot 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 Document Number: 70934 S-61812--Rev. B, 19-Jul-99 www.vishay.com 2-7 |
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