 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| LESHAN RADIO COMPANY, LTD. Silicon Tuning Diode This device is designed for FM tuning, general frequency control and tuning, or any top-of-the-line application requiring back-to-back diode configuration for minimum signal distortion and detuning. This device is supplied in the SOT-23 plastic package for high volume, pick and place assembly requirements. * High Figure of Merit-- Q = 150 (Typ) @ V R = 2.0 Vdc, f = 100 MHz * Guaranteed Capacitance Range * Dual Diodes - Save Space and Reduce Cost * Surface Mount Package * Available in 8 mm Tape and Reel * Monolithic Chip Provides Improved Matching - Guaranteed 1.0% (Max) Over Specified Tuning Range MMBV432LT1 DUAL VOLTAGE VARIABLE CAPACITANCE DIODE 3 1 2 1 2 CASE 318-08, STYLE 9 SOT- 23 (TO-236AB) 3 MAXIMUM RATINGS(EACH DIODE) Rating Reverse Voltage Forward Current Device Dissipation @T A = 25C Derate above 25C Junction Temperature Storage Temperature Range Symbol VR IF PD TJ T stg Value 14 200 225 1.8 +125 -55 to +125 Unit Vdc mAdc mW mW/C C C DEVICE MARKING MMBV432LT1=M4B ELECTRICAL CHARACTERISTICS(T A=25C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR=10Adc) Reverse Voltage Leakage Current (V R=9.0Vdc) Diode Capacitance (VR=2.0 Vdc,f=1.0MHz) Capacitance Ratio C2/C8 (f=1.0MHz) Figure of Merit (VR=2.0 Vdc, f=100MHz) Symbol V (BR)R IR CT CR Q Min 14 -- 43 1.5 100 Typ -- -- -- -- 150 Max -- 100 48.1 2.0 -- Unit Vdc nAdc pF -- -- MMBV432-1/2 LESHAN RADIO COMPANY, LTD. MMBV432LT1 TYPICAL CHARACTERISTICS 100 550 C T , DIODE CAPACITANCE (pF) 70 50 Q , FIGURE OF MERIT 450 350 30 f = 1.0MHz 20 250 T A = 25C 150 f = 100MHz T A = 25C 10 1 50 2 3 5 7 10 0 2 4 6 8 10 V R , REVERSE VOLTAGE (VOLTS) V R , REVERSE VOLTAGE (VOLTS) Figure 1. Diode Capacitance Figure 2. Figure of Merit versus Voltage 2000 1000 CT,DIODECAPACITANCE(NORMALIZED) 1.06 V R=2.0Vdc T A = 25C 1.04 Q , FIGURE OF MERIT 500 V R= 2.0Vdc 1.02 200 100 50 V R= 4.0Vdc 1.00 0.98 f = 1.0MHz 20 10 20 30 50 70 10 200 300 0.96 -75 -50 -25 0 +25 +50 +75 +100 +125 f , FREQUENCY ( MHz ) T J , JUNCTION TEMPERATURE (C) Figure 3. Figure of Merit versus Frequency Figure 4. Diode Capacitance versus Temperature 10 I R , REVERSE CURRENT( nA) 5 2 1 0.5 0.2 0.1 0.05 T A = 125C TA = 75C T A = 25C 0.02 0.01 0 2 4 6 8 10 12 14 V R , REVERSE VOLTAGE (VOLTS) Figure 5. Reverse Current versus Reverse Voltage MMBV432-2/2 |
Price & Availability of MMBV432
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |