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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJD2955/D
Complementary Power Transistors
* * * * * *
MJD2955 NPN MJD3055
SILICON POWER TRANSISTORS 10 AMPERES 60 VOLTS 20 WATTS
PNP
DPAK For Surface Mount Applications
Designed for general purpose amplifier and low speed switching applications. Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) Straight Lead Version in Plastic Sleeves ("-1" Suffix) Lead Formed Version Available in 16 mm Tape and Reel ("T4" Suffix) Electrically Similar to MJE2955 and MJE3055 DC Current Gain Specified to 10 Amperes High Current Gain-Bandwidth Product -- fT = 2.0 MHz (Min) @ IC = 500 mAdc
0.243 6.172
0.063 1.6 inches mm
REV 2
(c) Motorola, Inc. 1997 Motorola Bipolar Power Transistor Device Data
0.118 3.0
0.07 1.8
0.165 4.191
I II I I I IIIIIIIIIIIIIIIIIIIIIII II I I III IIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II I I III III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII III I I III III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIII III III III IIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII III II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII
MAXIMUM RATINGS
Rating Symbol VCEO VCB VEB IC IB Value 60 70 5 Unit Vdc Vdc Vdc Adc Adc Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current 10 6 Total Power Dissipation @ TC = 25_C Derate above 25_C PD PD 20 0.16 Watts W/_C Watts W/_C Total Power Dissipation (1) @ TA = 25_C Derate above 25_C Operating and Storage Junction Temperature Range 1.75 0.014 TJ, Tstg - 55 to + 150
CASE 369A-13
CASE 369-07
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol RJC RJA
Max
Unit
Thermal Resistance, Junction to Ambient (1)
71.4
_C/W
(1) These ratings are applicable when surface mounted on the minimum pad sizes recommended. Safe Area Curves are indicated by Figure 1. Both limits are applicable and must be observed.
0.190 4.826
Thermal Resistance, Junction to Case
6.25
_C/W
MINIMUM PAD SIZES RECOMMENDED FOR SURFACE MOUNTED APPLICATIONS
1
II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII
MJD2955 MJD3055
(1) Pulse Test: Pulse Width DYNAMIC CHARACTERISTICS ON CHARACTERISTICS OFF CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Current-Gain -- Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, f = 500 kHz)
Base-Emitter On Voltage (1) (IC = 4 Adc, VCE = 4 Vdc)
Collector-Emitter Saturation Voltage (1) (IC = 4 Adc, IB = 0.4 Adc) (IC = 10 Adc, IB = 3.3 Adc)
DC Current Gain (1) (IC = 4 Adc, VCE = 4 Vdc) (IC = 10 Adc, VCE = 4 Vdc)
Emitter Cutoff Current (VBE = 5 Vdc, IC = 0)
Collector Cutoff Current (VCB = 70 Vdc, IE = 0) (VCB = 70 Vdc, IE = 0, TC = 150_C)
Collector Cutoff Current (VCE = 70 Vdc, VEB(off) = 1.5 Vdc) (VCE = 70 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)
Collector Cutoff Current (VCE = 30 Vdc, IB = 0)
Collector-Emitter Sustaining Voltage (1) (IC = 30 mAdc, IB = 0)
2
v 300 s, Duty Cycle v 2%.
Characteristic
Motorola Bipolar Power Transistor Device Data
VCEO(sus) VCE(sat) VBE(on) Symbol ICBO ICEO IEBO ICEX hFE fT Min 20 5 60 -- -- -- -- -- -- -- -- -- 2 0.02 2 0.02 2 Max 100 -- 1.8 1.1 8 0.5 50 -- -- mAdc mAdc mAdc Adc MHz Unit Vdc Vdc Vdc --
MJD2955 MJD3055
TYPICAL CHARACTERISTICS
TA TC 2.5 25 PD, POWER DISSIPATION (WATTS)
2 20 TC TA SURFACE MOUNT
1.5 15
1 10
0.5
5
0
0
25
50
75
100
125
150
T, TEMPERATURE (C)
Figure 1. Power Derating
500 300 200 hFE, DC CURRENT GAIN 100 50 30 20 10 5 0.01 VCE = 2 V TJ = 150C t, TIME ( s) 25C - 55C
2 1 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 td @ VBE(off) 5 V tr TJ = 25C VCC = 30 V IC/IB = 10
0.02
0.05
0.1
0.2
0.5
1
2
5
10
0.06 0.1
0.2
0.4
0.6
1
2
4
6
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 2. DC Current Gain
Figure 3. Turn-On Time
1.4 1.2 V, VOLTAGE (VOLTS) 1 t, TIME ( s) 0.8 0.6 0.4 0.2 0 0.1 VCE(sat) @ IC/IB = 10 0.2 0.3 0.5 1 2 3 5 10 VBE(sat) @ IC/IB = 10 VBE @ VCE = 2 V TJ = 25C
5 3 2 1 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.06 0.1 ts TJ = 25C VCC = 30 V IC/IB = 10 IB1 = IB2
tf
0.2
0.4
0.6
1
2
4
6
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 4. "On" Voltages, MJD3055
Figure 5. Turn-Off Time
Motorola Bipolar Power Transistor Device Data
3
MJD2955 MJD3055
2 TJ = 25C +11 V 1.2 VBE(sat) @ IC/IB = 10 0.8 VBE @ VCE = 3 V 0.4 VCE(sat) @ IC/IB = 10 0 0.1 23 0.2 0.3 0.5 1 IC, COLLECTOR CURRENT (AMP) 5 10 0 -9 V tr, tf 10 ns DUTY CYCLE = 1% 51 -4 V RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, eg: 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA D1 RB VCC + 30 V 25 s RC SCOPE
1.6 V, VOLTAGE (VOLTS)
Figure 6. "On" Voltages, MJD2955
Figure 7. Switching Time Test Ciruit
r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1 0.7 0.5 0.3 0.2
D = 0.5 0.2 0.1 RJC(t) = r(t) RJC RJC = 6.25C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) JC(t) P(pk)
0.1 0.07 0.05 0.03 0.02
0.05 0.02 0.01 SINGLE PULSE
t1
t2
DUTY CYCLE, D = t1/t2
0.01 0.01
0.02 0.03 0.05
0.1
0.2 0.3
0.5
1
23 5 t, TIME (ms)
10
20
30
50
100
200 300
500
1k
Figure 8. Thermal Response
10 IC, COLLECTOR CURRENT (AMP) 5 3 2 1 0.5 0.3 0.1 0.05 0.03 0.02 0.01 0.6 1 TJ = 150C 500 s 100 s 1 ms 5 ms dc
FORWARD BIAS SAFE OPERATING AREA INFORMATION There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 9 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 150_C. T J(pk) may be calculated from the data in Figure 8. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
WIRE BOND LIMIT THERMAL LIMIT TC = 25C (D = 0.1) SECOND BREAKDOWN LIMIT
v
60
4 6 10 2 20 40 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 9. Maximum Forward Bias Safe Operating Area
4
Motorola Bipolar Power Transistor Device Data
MJD2955 MJD3055
PACKAGE DIMENSIONS
-T- B V R
4
SEATING PLANE
C E
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.250 0.250 0.265 0.086 0.094 0.027 0.035 0.033 0.040 0.037 0.047 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.175 0.215 0.020 0.050 0.020 --- 0.030 0.050 0.138 --- MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.84 1.01 0.94 1.19 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.45 5.46 0.51 1.27 0.51 --- 0.77 1.27 3.51 ---
S
1 2 3
A K F L D G
2 PL
Z U
J H 0.13 (0.005) T
DIM A B C D E F G H J K L R S U V Z
M
STYLE 1: PIN 1. 2. 3. 4.
BASE COLLECTOR EMITTER COLLECTOR
CASE 369A-13 ISSUE W
B V R
4
C E
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E F G H J K R S V INCHES MIN MAX 0.235 0.250 0.250 0.265 0.086 0.094 0.027 0.035 0.033 0.040 0.037 0.047 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.175 0.215 0.050 0.090 0.030 0.050 MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.84 1.01 0.94 1.19 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.46 1.27 2.28 0.77 1.27
A
1 2 3
S -T-
SEATING PLANE
K
F D G
3 PL M
J H 0.13 (0.005) T
STYLE 1: PIN 1. 2. 3. 4.
BASE COLLECTOR EMITTER COLLECTOR
CASE 369-07 ISSUE K
Motorola Bipolar Power Transistor Device Data
5
MJD2955 MJD3055
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Motorola Bipolar Power Transistor Device Data MJD2955/D

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