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| Schottky Barrier Diodes (SBD) MA2H736 Silicon epitaxial planar type Unit : mm For switching circuits 3.2 0.1 0 to 0.05 * Small and thin Half New Mini-power package * Allowing to rectify under (IF(AV) = 1 A) condition 1.9 0.1 2 1 I Absolute Maximum Ratings Ta = 25C Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature VR VRRM IF(AV) IFSM Tj Tstg 40 40 1 30 125 -40 to +125 V V A A C C 3.8 0.2 0.25 - 0.05 1.85 0.2 + 0.1 Parameter Symbol Rating Unit 0.9 0.2 0.9 0.2 1 : Anode 2 : Cathode Half New Mini-Power Package (2-pin) Marking Symbol: B Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) I Electrical Characteristics Ta = 25C Parameter Reverse current (DC) Forward voltage (DC) Terminal capacitance Reverse recovery time* Symbol IR VF Ct trr VR = 50 V IF = 1 A VR = 10 V, f = 1 MHz IF = IR = 100 mA Irr = 0.1 * IR, RL = 100 50 30 Conditions Min Typ Max 2 0.55 Unit mA V pF ns Note) 1. Rated input/output frequency: 20 MHz 2. * : trr measuring instrument Bias Application Unit N-50BU tr Input Pulse tp 10% t IF Output Pulse trr t Irr = 0.1 * IR IF = 100 mA IR = 100 mA RL = 100 A VR Pulse Generator (PG-10N) Rs = 50 W.F.Analyzer (SAS-8130) Ri = 50 90% tp = 2 s tr = 0.35 ns = 0.05 1.0 0.2 I Features 1 MA2H736 IF V F 1 Schottky Barrier Diodes (SBD) VF Ta 0.8 0.7 1 75C 25C - 20C 10 Ta = 125C IR VR 10-1 Ta = 125C Forward current IF (A) 0.6 0.5 0.4 0.3 0.2 0.1 Reverse current IR (mA) Forward voltage VF (V) 75C 10-1 10-2 IF = 1 A 10-3 10-2 25C 10-4 100 mA 10 mA 10-3 10-5 0 0.1 0.2 0.3 0.4 0.5 0.6 0 -40 10-4 0 40 80 120 160 200 0 10 20 30 40 50 60 Forward voltage VF (V) Ambient temperature Ta (C) Reverse voltage VR (V) IR T a 102 300 Ct VR 10 Reverse current IR (mA) VR = 40 V 10 V 5V Terminal capacitance Ct (pF) 250 200 1 150 10-1 100 10-2 50 10-3 -40 0 0 40 80 120 160 200 0 10 20 30 40 50 60 Ambient temperature Ta (C) Reverse voltage VR (V) 2 |
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