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  Datasheet File OCR Text:
 Ordering number : ENN6786
FSS131
P-Channel Silicon MOSFET
FSS131
Load Switching Applications
Features
* * *
Package Dimensions
unit : mm 2116
[FSS131]
8 5
0.3 4.4 6.0
0.2 5.0 0.595 1.27 0.43
Low ON-resistance. Ultrahigh-speed switching. 2.5V drive.
0.1
1.5
1.8max
1
4
1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : SOP8
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (1200mm2!0.8mm) Conditions Ratings -20 10 --6 -48 1.8 150 --55 to +150 Unit V V A A W C C
Electrical Characteristics at Ta=25C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs Conditions ID=-1mA, VGS=0 VDS=--20V, VGS=0 VGS=8V, VDS=0 VDS=--10V, ID=--1mA VDS=--10V, ID=-6A --0.4 10.5 15 Ratings min --20 --1 10 --1.4 typ max Unit V A A V S
Marking : S131
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N1500 TS IM TA-2719 No.6786-1/4
FSS131
Continued from preceding page.
Parameter Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions ID=-6A, VGS=-4V ID=-2A, VGS=-2.5V VDS=-10V, f=1MHz VDS=-10V, f=1MHz VDS=-10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=-10V, VGS=--10V, ID=-6A VDS=-10V, VGS=--10V, ID=-6A VDS=-10V, VGS=--10V, ID=-6A IS=--6A, VGS=0 Ratings min typ 29 41 2100 480 320 28 240 93 130 41 4 5 --0.82 --1.5 max 38 58 Unit m m pF pF pF ns ns ns ns nC nC nC V
Switching Time Test Circuit
VDD= --10V 0V --4V VIN ID= --6A RL=1.67 VIN PW=10s D.C.1%
D
VOUT
G
P.G
50
S
FSS131
--4 --8.0V -6.0V .0V
--3. 0V --2 .5V
--10 --9 --8
ID -- VDS
--10 --9
ID -- VGS
VDS= --10V
Drain Current, ID -- A
--7 --6 --5 --4 --3 --2 --1 0 0
Drain Current, ID -- A
--2
.0
V
--8 --7 --6
--4 --3 --2 --1 0
--0.1
--0.2
--0.3
--0.4
--0.5
--0.6
--0.7
--0.8
--0.9
--1.0
0
--0.5
--1.0
Ta= 7
5C --25 C
--1.5
VGS= --1.5V
25
C
--5
--2.0
--2.5 IT02527
Drain-to-Source Voltage, VDS -- V
80
IT02526 80
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
RDS(on) -- Ta
Ta=25C
Static Drain-to-Source On-State Resistance, RDS(on) -- m
Static Drain-to-Source On-State Resistance, RDS(on) -- m
60
60
ID= --2A
40
--6A
40
.5V = --2 , VGS --2A I D= --4.0V S= --6A, V G I D=
20
20
0 0 --2 --4 --6 --8 --10 IT02528
0 --60
--40
--20
0
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS -- V
Ambient Temperature, Ta -- C
IT02529
No.6786-2/4
FSS131
Forward Transfer Admittance, yfs -- S
100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 IT02530 --10
yfs -- ID
VDS= --10V
--10 7 5 3 2
IF -- VSD
VGS=0
Forward Current, IF -- A
25
C
C
--0.01 7 5 3 2 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 IT02531
--0.001
10000 7 5
Ciss, Coss, Crss -- VDS
f=1MHz
Drain Current, ID -- A
Diode Forward Voltage, VSD -- V
--9
Gate-to-Source Voltage, VGS -- V
VDS= --10V ID= --6A
--8 --7 --6 --5 --4 --3 --2 --1
Ciss, Coss, Crss -- pF
3 2
Ciss
1000 7 5 3 2
Coss Crss
100 0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20
0 0 5 10 15 20 25 30 35 40 45
Drain-to-Source Voltage, VDS -- V
1000 7
IT02532 --100 7 5 3 2
Total Gate Charge, Qg -- nC
Ta= 75
= Ta
75
--0.1 7 5 3 2
C 25C --25 C
5 --2
C
--1.0 7 5 3 2
VGS -- Qg
IT02533
SW Time -- ID
ASO
IDP= --48A <10s
Switching Time, SW Time -- ns
5 3 2
VDD= --10V VGS= --4V
1m
ID= --6A
Drain Current, ID -- A
td(off)
100 7 5 3 2
--10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2
10
10
0m s
s
ms
DC
op
er
ati
tf tr td(on)
on
Operation in this area is limited by RDS(on). Ta=25C Single pulse 2 Mounted on a ceramic board (1200mm !0.8mm)
5 7--0.1 23 5 7--1.0 23 5 7 --10 23
10 --0.1
2
3
5
7
--1.0
2
3
5
Drain Current, ID -- A
2.5
--10 IT02534
7
--0.01 --0.01 2 3
PD -- Ta
Drain-to-Source Voltage, VDS -- V
57 --100 IT02535
Allowable Power Dissipation, PD -- W
2.0 1.8 1.5
Mo
un
ted
on
ac
era
mi
1.0
cb
oa
rd(
12
00
mm
0.5
!0
2
.8m
m)
0 0 20 40 60 80 100 120 140 160
Amibient Tamperature, Ta -- C
IT02536
No.6786-3/4
FSS131
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2000. Specifications and information herein are subject to change without notice.
PS No.6786-4/4


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