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FMC7G20US60
October 2001
IGBT
FMC7G20US60
Compact & Complex Module
General Description
Fairchild's Insulated Gate Bipolar Transistor (IGBT) power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature.
Features
* * * * * * * UL Certified No. E209204 Short circuit rated 10us @ TC = 100C, VGE = 15V High speed switching Low saturation voltage : VCE(sat) = 2.2 V @ IC = 20A High input impedance Built in brake and 3 phase rectifier circuit Fast & soft anti-parallel FWD
R B S U T V W EU EV EW
Package Code : 21PM-AA
P
P1
GU
GV
GW
Applications
* * * * AC & DC motor controls General purpose inverters Robotics Servo controls
GB N E -GU -GV -GW
Internal Circuit Diagram
Absolute Maximum Ratings
Symbol VCES VGES Inverter & Brake IC ICM (1) IF IFM PD TSC VRRM IO IFSM I2t TJ Common TSTG VISO Mounting Torque
TC = 25C unless otherwise noted
Converter
Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ TC = 25C Collector Current @ TC = 100C Pulsed Collector Current Diode Continuous Forward Current @ TC = 100C Diode Maximum Forward Current Maximum Power Dissipation @ TC = 25C Short Circuit Withstand Time @ TC = 100C Repetitive Peak Reverse Voltage Average Output Rectified Current Surge Forward Current @ 1Cycle at 60Hz, Peak value Non-Repetitive 1 Cycle Surge Current Operating Junction Temperature Storage Temperature Range Isolation Voltage Mounting part Screw @ AC 1minute @ M4
FMC7G20US60 600 20 32 20 40 20 40 56 10 1200 20 260 280 -40 to +150 -40 to +125 2500 2
Units V V A A A A A W us V A A A2s C C V N.m
Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature
(c)2001 Fairchild Semiconductor Corporation
FMC7G20US60 Rev. A4
FMC7G20US60
Electrical Characteristics of the IGBT @ Inverter & Brake T
Symbol Parameter Test Conditions
C
= 25C unless otherwise noted
Min.
Typ.
Max.
Units
Off Characteristics
BVCES BVCES/ TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 600 ----0.6 ----250 100 V V/C uA nA
On Characteristics
VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 20mA, VCE = VGE IC = 20A, VGE = 15V IC = 32A, VGE = 15V 5.0 --6.0 2.2 2.5 8.5 2.8 -V V V
Dynamic Characteristics
Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---1323 254 47 ---pF pF pF
Switching Characteristics
td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Tsc Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge --------------10 ---30 49 48 152 0.52 0.47 0.99 30 51 52 311 0.57 1.03 1.6 -55 10 25 --70 200 --1.4 --75 400 --2.2 -80 15 40 ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ us nC nC nC
VCC = 300 V, IC = 20A, RG = 10, VGE = 15V, Inductive Load, TC = 25C
VCC = 300 V, IC = 20A, RG = 10, VGE = 15V, Inductive Load, TC = 125C
@ TC =
VCC = 300 V, VGE = 15V 100C
VCE = 300 V, IC = 20A, VGE = 15V
(c)2001 Fairchild Semiconductor Corporation
FMC7G20US60 Rev. A4
FMC7G20US60
Electrical Characteristics of the DIODE @ Inverter & Brake T
Symbol VFM trr Irr Qrr Parameter Diode Forward Voltage Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge IF = 20A di / dt = 40 A/us Test Conditions TC = 25C IF = 20A TC = 100C TC = 25C TC = 100C TC = 25C TC = 100C TC = 25C TC = 100C
C
= 25C unless otherwise noted
Min. ---------
Typ. 2.0 2.3 75 110 1.2 1.8 180 400
Max. 2.8 -150 -1.8 -300 --
Units V ns A nC
Electrical Characteristics of the DIODE @ Converter T
Symbol VFM IRRM Parameter Diode Forward Voltage Repetitive Reverse Current
C
= 25C unless otherwise noted
Test Conditions TC = 25C IF = 20A TC = 100C VR = VRRM TC = 25C TC = 100C
Min. -----
Typ. 1.1 1.0 -5
Max. 1.5 -8 --
Units V mA
Thermal Characteristics
Inverter Brake Converter Weight Symbol RJC RJC RJC RJC RJC Parameter Junction-to-Case (IGBT Part, per 1/6 Module) Junction-to-Case (DIODE Part, per 1/6 Module) Junction-to-Case (IGBT Part) Junction-to-Case (DIODE Part) Junction-to-Case (DIODE Part, per 1/6 Module) Weight of Module Typ. -----60 Max. 2.2 3.0 2.2 3.0 2.7 -Units C/W C/W C/W C/W C/W g
(c)2001 Fairchild Semiconductor Corporation
FMC7G20US60 Rev. A4
FMC7G20US60
60 Common Emitter TC = 25 50 12V 20V 15V
60 Common Emitter VGE = 15V T C = 25 T C = 125 ------
50
Collector Current, IC [A]
40
Collector Current, IC [A]
8
40
30 VGE = 10V 20
30
20
10
10
0 0 2 4 6
0 1 10
Collector - Emitter Voltage, VCE [V]
Collector - Emitter Voltage, V CE [V]
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage Characteristics
5
28 Common Emitter V GE = 15V
Collector - Emitter Voltage, VCE [V]
VCC = 300V Load Current : peak of square wave
24 40A
4
3
30A 20A
Load Current [A]
20
16
2
12
IC = 10A
8 1 4 0 -50 0 50 100 150 Duty cycle : 50% TC = 100 Power Dissipation = 32W 0.1 1 10 100 1000
0
Case Temperature, T C []
Frequency [KHz]
Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
20 Common Emitter T C = 25
20 Common Emitter TC = 125
Collector - Emitter Voltage, V [V] CE
16
Collector - Emitter Voltage, VCE [V]
16
12
12
8
8 40A 4 IC = 10A 0 20A
40A 4 IC = 10A 0 0 4 8 12 16 20 20A
0
4
8
12
16
20
Gate - Emitter Voltage, V GE [V]
Gate - Emitter Voltage, V GE [V]
Fig 5. Saturation Voltage vs. VGE
(c)2001 Fairchild Semiconductor Corporation
Fig 6. Saturation Voltage vs. VGE
FMC7G20US60 Rev. A4
FMC7G20US60
2400
2000 Cies
Common Emitter VGE = 0V, f = 1MHz TC = 25
Capacitance [pF]
Common Emitter V CC = 300V, V GE = 15V IC = 20A T C = 25 T C = 125 ------
Ton
1600 Coes 1200
Switching Time [ns]
100
Tr
800 Cres 400
0 1 10
10 1 10 100
Collector - Emitter Voltage, VCE [V]
Gate Resistance, R G [ ]
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs. Gate Resistance
1000
Switching Time [ns]
Common Emitter V CC = 300V, V GE = 15V IC = 20A T C = 25 T C = 125 ------
Eoff
Switching Loss [uJ]
1000 Eon
Toff Tf Toff
Eoff
Tf 100 100 1 10 100 1
Common Emitter V CC = 300V, V GE = 15V IC = 20A T C = 25 T C = 125 -----10 100
Gate Resistance, R G [ ]
Gate Resistance, R G []
Fig 9. Turn-Off Characteristics vs. Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
1000 Common Emitter V GE = 15V, RG = 10 TC = 25 TC = 125 ------
Ton
Switching Time [ns]
100 Tr
Switching Time [ns]
Toff Tf Toff Tf 100 Common Emitter VGE = 15V, RG = 10 TC = 25 TC = 125 -----10 15 20 25 30 35 40
10 10 15 20 25 30 35 40
Collector Current, IC [A]
Collector Current, IC [A]
Fig 11. Turn-On Characteristics vs. Collector Current
(c)2001 Fairchild Semiconductor Corporation
Fig 12. Turn-Off Characteristics vs. Collector Current
FMC7G20US60 Rev. A4
FMC7G20US60
15 Common Emitter V GE = 15V, RG = 10 T C = 25 T C = 125 -----Common Emitter RL = 15 TC = 25 V CC = 100 V 9 300 V 200 V
Eoff
1000 Eon
Eoff
Gate - Emitter Voltage, V [ V ] GE
12
Switching Loss [uJ]
6
3
100 10 15 20 25 30 35 40
0 0 10 20 30 40 50 60
Collector Current, IC [A]
Gate Charge, Qg [ nC ]
Fig 13. Switching Loss vs. Collector Current
Fig 14. Gate Charge Characteristics
100 IC MAX. (Pulsed) 50us
100
Collector Current, I C [A]
1
1
DC Operation
Collector Current, IC [A]
10
IC MAX. (Continuous)
100us
10
0.1
Single Nonrepetitive Pulse TC = 25 Curves must be derated linearly with increase in temperature 0.3 1 10 100 1000
Safe Operating Area V GE = 20V, T C = 100 1 1 10 100 1000
0.01
Collector-Emitter Voltage, V CE [V]
Collector-Emitter Voltage, V CE [V]
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA Characteristics
80
10
10
Thermal Response, Zthjc [/W]
Collector Current, I C [A]
1
1 Single Nonrepetitive Pulse T J 125 V GE = 15V RG = 10 0 100 200 300 400 500 600 700
0.1
0.1
0.01 10
-5
IGBT : DIODE : 10
-4
10
-3
10
-2
10
-1
10
0
10
1
Collector-Emitter Voltage, V CE [V]
Rectangular Pulse Duration [sec]
Fig 17. RBSOA Characteristics
(c)2001 Fairchild Semiconductor Corporation
Fig 18. Transient Thermal Impedance
FMC7G20US60 Rev. A4
FMC7G20US60
40
20
Peak Reverse Recovery Current, I rr [A] Reverse Recovery Time, T rr [x10ns]
35 30 25 20 15 10 5 0 0
Common Cathode V GE = 0V T C = 25 T C = 125
10
Trr
Forward Current, I
F
[A]
Irr 1
Common Cathode di/dt = 40A/us TC = 25 TC = 100 0.1 3 6 9 12 15 18 21
1
2
3
4
Forward Voltage, V F [V]
Forward Current, IF [A]
Fig 19. Forward Characteristics
Fig 20. Reverse Recovery Characteristics
(c)2001 Fairchild Semiconductor Corporation
FMC7G20US60 Rev. A4
FMC7G20US60
Package Dimension
21PM-AA (FS PKG CODE BJ)
Dimensions in Millimeters
(c)2001 Fairchild Semiconductor Corporation FMC7G20US60 Rev. A4
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SLIENT SWITCHER(R)
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VCXTM
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2001 Fairchild Semiconductor Corporation
Rev. H4

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