![]() |
|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
MBR2535CT - MBR2560CT 30A SCHOTTKY BARRIER RECTIFIER Features * * * * * * * Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications Plastic Material: UL Flammability Classification Rating 94V-0 TO-220AB L B C K D A 1 2 3 M Dim A B C D E G Min 14.22 9.65 2.54 5.84 3/4 12.70 2.29 0.51 3.53AE 3.56 1.14 0.30 2.03 Max 15.88 10.67 3.43 6.86 6.35 14.73 2.79 1.14 4.09AE 4.83 1.40 0.64 2.92 E J N G H J K L M N P Mechanical Data * * * * * * Case: Molded Plastic Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 Polarity: As Marked on Body Weight: 2.24 grams (approx.) Mounting Position: Any Marking: Type Number HH Pin 1 + Pin 2 Pin 3 + + Case P All Dimensions in mm Maximum Ratings and Electrical Characteristics Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current @ TC = 130C Non-Repetitive Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Peak Repetitive Reverse Surge Current (Note 3) Forward Voltage Drop @ IF = 15.0A, TC = 25C @ IF = 15.0A, TC = 125C @ IF = 30.0A, TC = 25C @ IF = 30.0A, TC = 125C @ TC = 25C @ TC = 125C Symbol VRRM VRWM VR VR(RMS) IO IFSM IRRM @ TA = 25C unless otherwise specified MBR2535CT 35 25 MBR2545CT 45 32 30 MBR2550CT 50 35 MBR2560CT 60 42 Unit V V A A 150 1.0 3/4 3/4 0.82 0.73 0.2 40 750 1.5 -65 to +150 0.5 0.75 0.65 3/4 3/4 1.0 50 500 A VFM V Peak Reverse Current at Rated DC Blocking Voltage Typical Junction Capacitance (Note 2) IRM Cj RqJC Tj, TSTG mA pF C/W C Typical Thermal Resistance Junction to Case (Note 1) Operating and Storage Temperature Range Notes: 1. Thermal resistance junction to case mounted on heatsink. 2. Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC. 3. 2.0ms pulse width, f = 1.0KHz. DS31036 Rev. D-2 1 of 2 MBR2535CT - MBR2560CT IF, INSTANTANEOUS FORWARD CURRENT (A) 30 50 I(AV), AVERAGE RECTIFIED CURRENT (A) Tj = 25C IF Pulse Width = 300s 24 10 Tj = 150C Tj = 25C 18 1.0 12 0.1 6 MBR2535CT & MBR2545CT MBR2550CT & MBR2560CT 0 0 50 100 150 TC, CASE TEMPERATURE (C) Fig. 1 Forward Derating Curve 0.01 0.2 0.4 0.6 0.8 1.0 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics 10000 IFSM, PEAK FORWARD SURGE CURRENT (A) 150 8.3 ms single half-sine-wave JEDEC method Tj = 25C f = 1.0MHz 100 Cj, JUNCTION CAPACITANCE (pF) 1000 50 0 1 10 100 NUMBER OF CYCLES AT 60Hz Fig. 3 Maximum Non-Repetitive Surge Current 100 0.1 MBR2535CT & MBR2545CT MBR2550CT & MBR2560CT 1.0 10 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance DS31036 Rev. D-2 2 of 2 MBR2535CT - MBR2560CT |
Price & Availability of MBR2545CT
![]() |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |