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 polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. TM "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance
Total Device Dissipation 500 Watts Junction to Case Thermal Resistance 0.35 o C/W Maximum Junction Temperature 200 o C Storage Temperature
F1430
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 300 Watts Gemini Package Style AR HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE
o
ABSOLUTE MAXIMUM RATINGS (TC = 25 C)
DC Drain Current Drain to Gate Voltage 150 V Drain to Source Voltage 150 V Gate to Source Voltage 30V
-65 o C to 150o C
24 A
RF CHARACTERISTICS ( 300 WATTS OUTPUT )
SYMBOL Gps PARAMETER Common Source Power Gai Drain Efficienc Load Mismatch Toleranc MIN 13 65 20:1 TYP MAX UNITS dB % Relative TEST CONDITIONS Idq = 1.2 A, Vds = 50.0 V, F = 150 MHz Idq = 1.2 A, Vds = 50.0 V, F = 150 MHz Idq = 1.2 A, Vds = 50.0 V, F = 150 MHz
VSWR
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL Bvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss Coss PARAMETER Drain Breakdown Voltag Zero Bias Drain Curren Gate Leakage Curren Gate Bias for Drain Curren Forward Transconductanc Saturation Resistanc Saturation Curren Common Source Input Capacitanc Common Source Feedback Capacitanc Common Source Output Capacitanc 1 6.4 0.18 38.4 360 17.6 160 MIN 125 16 1 7 TYP MAX UNITS V mA uA V Mho Ohm Amp pF pF pF TEST CONDITIONS Ids = 0.1 A, Vgs = 0V Vgs = 0V Vgs = 30V Vgs = Vds
Vds = 50.0 V, Vds = 0 V, Ids = 0.15 A,
Vds = 10V, Vgs = 5V Vgs = 20V, Ids = 16 A Vgs = 20V, Vds = 10V Vds = 50.0 V, Vgs = 0V, F = 1 MHz Vds = 50.0 V, Vgs = 0V, F = 1 MHz Vds = 50.0 V, Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 1/12/98
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
F1430
POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE
F1E 8 DICE CAPACITANCE
1000
Ciss
100
Coss Crss
10 0 5 10 15 20 25 30 35 40 45 50
VDS IN VOLTS
IV CURVE
F1E 8 DICE IV
40 35 30 ID IN AMPS 25 20 15 10 5 0 0 2 vg=2v 4 6 Vg=4v 8 10 12 V SINVOLTS D vg=8v 14 vg=10v 16 18 vg=12v 20
ID AND GM VS VGS
F1E 8 DICE ID & GM Vs VG
100.00
Id in amps; Gm in mhos
10.00
Id
1.00
gM
0.10
0
2
4
6
8
10
12
14
16
18
20
Vg=6v
Vgs in Volts
S11 AND S22 SMITH CHART
PACKAGE DIMENSIONS IN INCHES
POLYFET RF DEVICES
REVISION 1/12/98
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com


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