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| polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. TM "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance Total Device Dissipation 350 Watts Junction to Case Thermal Resistance 0.5 o C/W Maximum Junction Temperature 200 o C Storage Temperature F1081 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 200 Watts Gemini Package Style AR HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS (TC = 25 C) DC Drain Current Drain to Gate Voltage 70 V Drain to Source Voltage 70 V Gate to Source Voltage 30V -65 o C to 150o C 16 A RF CHARACTERISTICS ( 200 WATTS OUTPUT ) SYMBOL Gps PARAMETER Common Source Power Gai Drain Efficienc Load Mismatch Toleranc MIN 13 60 20:1 TYP MAX UNITS dB % Relative TEST CONDITIONS Idq = 1.6 A, Vds = 28.0 V, F = 175 MHz Idq = 1.6 A, Vds = 28.0 V, F = 175 MHz Idq = 1.6 A, Vds = 28.0 V, F = 175 MHz VSWR ELECTRICAL CHARACTERISTICS (EACH SIDE) SYMBOL Bvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss Coss PARAMETER Drain Breakdown Voltag Zero Bias Drain Curren Gate Leakage Curren Gate Bias for Drain Curren Forward Transconductanc Saturation Resistanc Saturation Curren Common Source Input Capacitanc Common Source Feedback Capacitanc Common Source Output Capacitanc 1 3.2 0.35 22 132 16 80 MIN 65 4 1 7 TYP MAX UNITS V mA uA V Mho Ohm Amp pF pF pF TEST CONDITIONS Ids = 0.2 A, Vgs = 0V Vgs = 0V Vgs = 30V Vgs = Vds Vds = 28.0 V, Vds = 0 V, Ids = 0.4 A, Vds = 10V, Vgs = 5V Vgs = 20V, Ids = 16 A Vgs = 20V, Vds = 10V Vds = 28.0 V, Vgs = 0V, F = 1 MHz Vds = 28.0 V, Vgs = 0V, F = 1 MHz Vds = 28.0 V, Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 1/12/98 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com F1081 POUT VS PIN GRAPH F-1081 POUT vs PIN F=175 MHZ; IDQ=1.6A; VDS=28V 180 160 140 POUT IN WATTS 120 100 80 17 16 1000 CAPACITANCE VS VOLTAGE F1B 4DIE CAPACITANCE GAIN 15 Gain in dB 14 13 12 Coss 100 POUT Ciss Efficiency = 66.67% 60 40 0 2 4 6 8 10 PIN IN WATTS 12 14 16 11 10 Crss 10 0 5 10 15 VDS IN VOLTS 20 25 30 IV CURVE F1B 4DIE IV CURVE 30 ID AND GM VS VGS F1B 4 DIE GM & ID vs VGS 100 25 Id 20 10 15 10 1 5 Gm 0 0 2 4 6 8 10 Vds in Volts 12 14 16 18 20 0.1 0 2 4 6 Vgs in Volts 8 10 12 14 Vg = 2V Vg = 4V Vg = 6V Vg = 8V Vg = 10V Vg = 12V S11 AND S22 SMITH CHART PACKAGE DIMENSIONS IN INCHES POLYFET RF DEVICES REVISION 1/12/98 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com |
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