 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| BYP 302 FRED Diode * Fast recovery epitaxial diode * Soft recovery characteristics Type BYP 302 VRRM 1200V IFRMS 40A trr 130ns Package TO-218 AD Ordering Code C67047-A2252-A2 Maximum Ratings Parameter Mean forward current Symbol Values 25 Unit A 40 115 IFAV IFRMS IFSM IFRM 260 i2dt 66 TC = 90 C, D = 0.5 RMS forward current Surge forward current, sine halfwave, aperiodic Tj = 100 C, f = 50 Hz Repetitive peak forward current Tj = 100 C, tp 10 s i 2t value Tj = 100 C, tp = 10 ms Repetitive peak reverse voltage Surge peak reverse voltage Power dissipation A2s 1200 1200 W 75 -40 ... + 150 -40 ... + 150 0.8 46 E 40 / 150 / 56 K/W C V VRRM VRSM Ptot Tj Tstg RthJC RthJA - TC = 90 C Chip or operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip-ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Semiconductor Group 1 12.96 BYP 302 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Static Characteristics Forward voltage drop Values typ. max. Unit VF 1.9 2.2 1.5 1.8 0.01 0.05 0.15 2.7 - V IF = 15 A, Tj = 25 C IF = 25 A, Tj = 25 C IF = 15 A, Tj = 100 C IF = 25 A, Tj = 100 C Reverse current IR 0.25 - mA VR = 1200 V, Tj = 25 C VR = 1200 V, Tj = 100 C VR = 1200 V, Tj = 150 C AC Characteristics Reverse recovery charge Qrr 4.5 - C IF = 25 A, VCC = 500 V, diF/dt = -1000 A/s Tj = 100 C Peak reverse recovery current IRRM 50 - A IF = 25 A, VCC = 500 V, diF/dt = -1000 A/s Tj = 100 C Reverse recovery time trr 130 - ns IF = 25 A, VCC = 500 V, diF/dt = -1000 A/s Tj = 100 C Storage time tS 65 1 - IF = 25 A, VCC = 500 V, diF/dt = -1000 A/s Tj = 100 C Softfaktor S IF = 25 A, VCC = 500 V, diF/dt = -1000 A/s Tj = 100 C Semiconductor Group 2 12.96 BYP 302 Typ. forward characteristics Typ. reverse current IF = f (VF) parameter: Tj 10 2 IRRM = f (diF / dt) parameter: VCC = 500 V,IF = 25 A, Tj = 100 C 60 A Tj=150C 125C 100C A 25C IF 10 1 50 IRRM 45 40 35 30 25 10 0 20 15 10 5 10 -1 0 1 2 3 4 5 6 V VF 8 0 1 10 10 2 10 3 A/us diF/dt Typ. reverse recovery charge Qrr = f (diF / dt) parameter: VCC = 500 V,IF = 25 A, Tj = 100 C 5.0 uC Qrr 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 1 10 2 3 10 10 A/us diF/dt Semiconductor Group 3 12.96 |
Price & Availability of C67047-A2252-A2
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |