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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5460/D JFET Amplifiers P-Channel -- Depletion 3 GATE 2 DRAIN 2N5460 thru 2N5462 1 SOURCE MAXIMUM RATINGS Rating Drain - Gate Voltage Reverse Gate - Source Voltage Forward Gate Current Total Device Dissipation @ TA = 25C Derate above 25C Junction Temperature Range Storage Channel Temperature Range Symbol VDG VGSR IG(f) PD TJ Tstg Value 40 40 10 350 2.8 - 65 to +135 - 65 to +150 Unit Vdc Vdc mAdc mW mW/C C C 1 2 3 CASE 29-04, STYLE 7 TO-92 (TO-226AA) ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Gate - Source Breakdown Voltage (IG = 10 Adc, VDS = 0) Gate Reverse Current (VGS = 20 Vdc, VDS = 0) (VGS = 30 Vdc, VDS = 0) (VGS = 20 Vdc, VDS = 0, TA = 100C) (VGS = 30 Vdc, VDS = 0, TA = 100C) Gate - Source Cutoff Voltage (VDS = 15 Vdc, ID = 1.0 Adc) Gate - Source Voltage (VDS = 15 Vdc, ID = 0.1 mAdc) (VDS = 15 Vdc, ID = 0.2 mAdc) (VDS = 15 Vdc, ID = 0.4 mAdc) V(BR)GSS 2N5460, 2N5461, 2N5462 IGSS 2N5460, 2N5461, 2N5462 2N5460, 2N5461, 2N5462 2N5460 2N5461 2N5462 2N5460 2N5461 2N5462 VGS(off) -- -- 0.75 1.0 1.8 0.5 0.8 1.5 -- -- -- -- -- -- -- -- 5.0 1.0 6.0 7.5 9.0 4.0 4.5 6.0 nAdc Adc Vdc 40 -- -- Vdc VGS Vdc ON CHARACTERISTICS Zero - Gate -Voltage Drain Current (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) 2N5460 2N5461 2N5462 IDSS - 1.0 - 2.0 - 4.0 -- -- -- - 5.0 - 9.0 - 16 mAdc SMALL- SIGNAL CHARACTERISTICS Forward Transfer Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) 2N5460 2N5461 2N5462 yfs 1000 1500 2000 -- -- -- -- -- -- -- 5.0 1.0 4000 5000 6000 75 7.0 2.0 mmhos Output Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) yos Ciss Crss NF en mmhos pF pF FUNCTIONAL CHARACTERISTICS Noise Figure (VDS = 15 Vdc, VGS = 0, RG = 1.0 Megohm, f = 100 Hz, BW = 1.0 Hz) Equivalent Short-Circuit Input Noise Voltage (VDS = 15 Vdc, VGS = 0, f = 100 Hz, BW = 1.0 Hz) -- -- 1.0 60 2.5 115 dB nV Hz Motorola Small-Signal Transistors, FETs and Diodes Device Data (c) Motorola, Inc. 1997 1 2N5460 thru 2N5462 DRAIN CURRENT versus GATE SOURCE VOLTAGE 4.0 3.5 I D, DRAIN CURRENT (mA) 3.0 2.5 2.0 1.5 1.0 0.5 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VGS, GATE-SOURCE VOLTAGE (VOLTS) 1.8 2.0 TA = - 55C 25C 125C VDS = 15 V Yfs FORWARD TRANSFER ADMITTANCE (m mhos) 4000 3000 2000 FORWARD TRANSFER ADMITTANCE versus DRAIN CURRENT 1000 700 500 300 200 0.2 0.3 1.0 0.5 0.7 ID, DRAIN CURRENT (mA) VDS = 15 V f = 1.0 kHz 2.0 3.0 4.0 Figure 1. VGS(off) = 2.0 Volts Yfs FORWARD TRANSFER ADMITTANCE (m mhos) Figure 4. VGS(off) = 2.0 Volts 10 9.0 I D, DRAIN CURRENT (mA) 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 0 0.5 1.5 2.0 2.5 3.0 1.0 VGS, GATE-SOURCE VOLTAGE (VOLTS) 3.5 4.0 TA = - 55C 25C 125C VDS = 15 V 10000 7000 5000 3000 2000 1000 700 500 0.5 0.7 1.0 2.0 3.0 ID, DRAIN CURRENT (mA) VDS = 15 V f = 1.0 kHz 5.0 7.0 Figure 2. VGS(off) = 4.0 Volts Yfs FORWARD TRANSFER ADMITTANCE (m mhos) Figure 5. VGS(off) = 4.0 Volts 16 14 I D, DRAIN CURRENT (mA) 12 10 8.0 6.0 4.0 2.0 0 0 1.0 2.0 3.0 4.0 5.0 6.0 VGS, GATE-SOURCE VOLTAGE (VOLTS) 7.0 8.0 TA = - 55C 25C 125C VDS = 15 V 10000 7000 5000 3000 2000 1000 700 500 0.5 0.7 1.0 2.0 3.0 ID, DRAIN CURRENT (mA) VDS = 15 V f = 1.0 kHz 5.0 7.0 10 Figure 3. VGS(off) = 5.0 Volts Figure 6. VGS(off) = 5.0 Volts 2 Motorola Small-Signal Transistors, FETs and Diodes Device Data 2N5460 thru 2N5462 r oss , OUTPUT RESISTANCE (k ohms) 1000 700 500 300 200 IDSS = 3.0 mA 100 70 50 30 20 10 0.1 0.2 0.5 1.0 2.0 ID, DRAIN CURRENT (mA) 5.0 10 6.0 mA 10 mA 10 VDS = 15 V f = 1.0 kHz C, CAPACITANCE (pF) 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 0 Coss Crss 10 20 30 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 40 Ciss f = 1.0 MHz VGS = 0 Figure 7. Output Resistance versus Drain Current Figure 8. Capacitance versus Drain-Source Voltage 5.0 VDS = 15 V VGS = 0 RG = 1.0 Megohm 10 9.0 NF, NOISE FIGURE (dB) 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 VDS = 15 V VGS = 0 f = 100 Hz NF, NOISE FIGURE (dB) 4.0 3.0 2.0 1.0 0 10 20 30 50 100 200 300 500 1000 2000 3000 f, FREQUENCY (Hz) 10,000 0 1.0 10 100 1000 RS, SOURCE RESISTANCE (k Ohms) 10,000 Figure 9. Noise Figure versus Frequency Figure 10. Noise Figure versus Source Resistance vi Crss Ciss ross Coss | yfs | vi COMMON SOURCE y PARAMETERS FOR FREQUENCIES BELOW 30 MHz yis = j Ciss yos = j Cosp * + 1/ross yfs = yfs | yrs = -j Crss * Cosp is Coss in parallel with Series Combination of Ciss and Crss. NOTE: 1. Graphical data is presented for dc conditions. Tabular data is given for pulsed conditions (Pulse Width = 630 ms, Duty Cycle = 10%). Figure 11. Equivalent Low Frequency Circuit Motorola Small-Signal Transistors, FETs and Diodes Device Data 3 2N5460 thru 2N5462 PACKAGE DIMENSIONS A R P SEATING PLANE B F L K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 2.93 --- 3.43 --- XX G H V 1 D J C SECTION X-X N N DIM A B C D F G H J K L N P R V CASE 029-04 (TO-226AA) ISSUE AD STYLE 7: PIN 1. SOURCE 2. DRAIN 3. GATE Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 303-675-2140 or 1-800-441-2447 JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 81-3-3521-8315 MfaxTM: RMFAX0@email.sps.mot.com - TOUCHTONE 602-244-6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, - US & Canada ONLY 1-800-774-1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 INTERNET: http://motorola.com/sps 4 2N5460/D Motorola Small-Signal Transistors, FETs and Diodes Device Data |
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