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PHOTOTRANSISTOR OPTOCOUPLERS H11AV1-M H11AV1A-M H11AV2-M H11AV2A-M SCHEMATIC PACKAGE OUTLINE 1 6 2 5 6 6 1 H11AV1S-M, H11AV2S-M 1 H11AV1-M, H11AV2-M PIN 1. ANODE 2. CATHODE 3. NO CONNECTION 4. EMITTER 5. COLLECTOR 6. BASE 3 NC 4 6 1 H11AV1A-M, H11AV2A-M DESCRIPTION The general purpose optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line white package. FEATURES * H11AV1 and H11AV2 feature 0.3" input-output lead spacing * H11AV1A and H11AV2A feature 0.4" input-output lead spacing * UL recognized (File #E90700, Vol. 2) * VDE recognized (File #102497) - Add option V (e.g., H11AV1AV-M) APPLICATIONS * Power supply regulators * Digital logic inputs * Microprocessor inputs (c) 2003 Fairchild Semiconductor Corporation Page 1 of 10 6/30/03 PHOTOTRANSISTOR OPTOCOUPLERS H11AV1-M H11AV1A-M H11AV2-M H11AV2A-M ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise specified) Parameter TOTAL DEVICE Storage Temperature Operating Temperature Wave solder temperature (see page 9 for reflow solder profiles) Total Device Power Dissipation @ TA = 25C Derate above 25C EMITTER DC/Average Forward Input Current Reverse Input Voltage LED Power Dissipation @ TA = 25C Derate above 25C DETECTOR Collector-Emitter Voltage Collector-Base Voltage Emitter-Collector Voltage Detector Power Dissipation @ TA = 25C Derate above 25C VCEO VCBO VECO PD 70 70 7 150 1.76 V V V mW mW/C IF VR PD 60 6 120 1.41 mA V mW mW/C TSTG TOPR TSOL PD -40 to +150 -40 to +100 260 for 10 sec 250 2.94 C C C mW mW/C Symbol Value Units (c) 2003 Fairchild Semiconductor Corporation Page 2 of 10 6/30/03 PHOTOTRANSISTOR OPTOCOUPLERS H11AV1-M H11AV1A-M H11AV2-M H11AV2A-M ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise specified) INDIVIDUAL COMPONENT CHARACTERISTICS Parameter EMITTER Input Forward Voltage (IF = 10 mA) TA = 25C TA = -55C TA = 100C Reverse Leakage Current DETECTOR Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Collector Breakdown Voltage Collector-Emitter Dark Current Collector-Base Dark Current Capacitance (IC = 1.0 mA, IF = 0) (IC = 100 A, IF = 0) (IE = 100 A, IF = 0) (VCE = 10 V, IF = 0) (VCB = 10 V) (VCE = 0 V, f = 1 MHz) BVCEO BVCBO BVECO ICEO ICBO CCE 70 70 7 100 120 10 1 0.5 8 50 V V V nA nA pF (VR = 6.0 V) IR VF 0.8 0.9 0.7 1.18 1.28 1.05 1.5 1.7 1.4 10 A V Test Conditions Symbol Min Typ* Max Unit ISOLATION CHARACTERISTICS Characteristic Input-Output Isolation Voltage Isolation Resistance Isolation Capacitance Note * Typical values at TA = 25C Test Conditions Symbol (f = 60 Hz, t = 1 sec) (VI-O = 500 VDC) (VI-O = 0 V, f = 1 MHz) VISO RISO CISO Min 7500 1011 0.2 2 Typ* Max Units Vac(pk) pF (c) 2003 Fairchild Semiconductor Corporation Page 3 of 10 6/30/03 PHOTOTRANSISTOR OPTOCOUPLERS H11AV1-M H11AV1A-M H11AV2-M H11AV2A-M TRANSFER CHARACTERISTICS (TA = 25C Unless otherwise specified.) DC Characteristic Current Transfer Ratio, Collector to Emitter Collector-Emitter Saturation Voltage AC Characteristic Non-Saturated Turn-on Time Non Saturated Turn-off Time (IC = 2 mA, VCC = 10 V, RL = 100) (Fig. 11) (IC = 2 mA, VCC = 10 V, RL = 100) (Fig. 11) TON TON All 15 s Test Conditions Symbol Device H11AV1 H11AV1A H11AV2 H11AV2A All Min 100 50 0.4 V Typ* Max 300 Unit % (IF = 10 mA, VCE = 10 V) CTR (IC = 2 mA, IF = 20 mA) VCE (SAT) All 15 s * Typical values at TA = 25C (c) 2003 Fairchild Semiconductor Corporation Page 4 of 10 6/30/03 PHOTOTRANSISTOR OPTOCOUPLERS H11AV1-M H11AV1A-M H11AV2-M H11AV2A-M TYPICAL PERFORMANCE CURVES Fig. 1 LED Forward Voltage vs. Forward Current 1.8 1.6 VCE = 5.0V TA = 25C Normalized to IF = 10 mA Fig. 2 Normalized CTR vs. Forward Current 1.7 1.4 VF - FORWARD VOLTAGE (V) 1.6 1.2 NORMALIZED CTR 1.5 1.0 1.4 TA = -55C 1.3 TA = 25C 1.2 TA = 100C 0.8 0.6 0.4 1.1 0.2 1.0 1 10 100 0.0 0 2 4 6 8 10 12 14 16 18 20 IF - LED FORWARD CURRENT (mA) IF - FORWARD CURRENT (mA) Fig. 3 Normalized CTR vs. Ambient Temperature 1.4 1.0 Fig. 4 CTR vs. RBE (Unsaturated) NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN)) 0.9 0.8 IF = 20 mA IF = 10 mA 1.2 IF = 5 mA 0.7 IF = 5 mA 0.6 0.5 0.4 0.3 0.2 VCE= 5.0 V 0.1 0.0 NORMALIZED CTR 1.0 IF = 10 mA 0.8 0.6 IF = 20 mA 0.4 Normalized to IF = 10 mA TA = 25C 0.2 -60 -40 -20 0 20 40 60 80 100 10 100 1000 RBE- BASE RESISTANCE (k) TA - AMBIENT TEMPERATURE (C) 1.0 VCE (SAT) - COLLECTOR-EMITTER SATURATION VOLTAGE (V) Fig. 5 CTR vs. RBE (Saturated) NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN)) Fig. 6 Collector-Emitter Saturation Voltage vs Collector Current 100 0.9 VCE= 0.3 V 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 10 100 1000 IF = 5 mA IF = 10 mA IF = 20 mA TA = 25C 10 1 IF = 2.5 mA 0.1 0.01 IF = 5 mA IF = 10 mA IF = 20 mA RBE- BASE RESISTANCE (k ) 0.001 0.01 0.1 1 10 IC - COLLECTOR CURRENT (mA) (c) 2003 Fairchild Semiconductor Corporation Page 5 of 10 6/30/03 PHOTOTRANSISTOR OPTOCOUPLERS H11AV1-M H11AV1A-M H11AV2-M H11AV2A-M Fig. 7 Switching Speed vs. Load Resistor 1000 IF = 10 mA VCC = 10 V TA = 25C 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.1 1 10 100 10 Fig. 8 Normalized ton vs. RBE SWITCHING SPEED - (s) 100 10 Toff Tf Ton 1 Tr 0.1 NORMALIZED ton - (ton(RBE) / ton(open)) VCC = 10 V IC = 2 mA RL = 100 100 1000 10000 100000 R-LOAD RESISTOR (k) RBE- BASE RESISTANCE (k ) Fig. 10 Dark Current vs. Ambient Temperature Fig. 9 Normalized toff vs. RBE ICEO - COLLECTOR -EMITTER DARK CURRENT (nA) 1.4 1.3 10000 VCE = 10 V TA = 25C 1000 NORMALIZED toff - (toff(RBE) / toff(open)) 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 10 100 1000 10000 100000 VCC = 10 V IC = 2 mA RL = 100 100 10 1 0.1 0.01 0.001 0 20 40 60 80 100 RBE- BASE RESISTANCE (k ) TA - AMBIENT TEMPERATURE (C) TEST CIRCUIT VCC = 10V WAVE FORMS INPUT PULSE IF INPUT RBE IC RL 10% 90% tr ton Adjust IF to produce IC = 2 mA tf toff OUTPUT PULSE OUTPUT Figure 11. Switching Time Test Circuit and Waveforms (c) 2003 Fairchild Semiconductor Corporation Page 6 of 10 6/30/03 PHOTOTRANSISTOR OPTOCOUPLERS H11AV1-M H11AV1A-M H11AV2-M H11AV2A-M Package Dimensions (Through Hole) 0.350 (8.89) 0.320 (8.13) Pin 1 ID Package Dimensions (Surface Mount) 0.350 (8.89) 0.320 (8.13) PIN 1 ID 0.260 (6.60) 0.240 (6.10) 0.260 (6.60) 0.240 (6.10) 0.390 (9.90) 0.332 (8.43) SEATING PLANE SEATING PLANE 0.070 (1.77) 0.040 (1.02) 0.070 (1.77) 0.040 (1.02) 0.014 (0.36) 0.010 (0.25) 0.320 (8.13) 0.320 (8.13) 0.014 (0.36) 0.010 (0.25) 0.200 (5.08) 0.115 (2.93) 0.200 (5.08) 0.115 (2.93) 0.012 (0.30) 0.008 (0.20) 0.100 (2.54) 0.015 (0.38) 0.020 (0.50) 0.016 (0.41) 0.100 (2.54) 15 0.012 (0.30) 0.025 (0.63) 0.020 (0.51) 0.020 (0.50) 0.016 (0.41) 0.100 [2.54] 0.035 (0.88) 0.006 (0.16) Package Dimensions (0.4" Lead Spacing) 0.350 (8.89) 0.320 (8.13) PIN 1 ID Recommended Pad Layout for Surface Mount Leadform 0.070 (1.78) 0.260 (6.60) 0.240 (6.10) 0.060 (1.52) 0.070 (1.77) 0.040 (1.02) SEATING PLANE 0.014 (0.36) 0.010 (0.25) 0.425 (10.79) 0.100 (2.54) 0.305 (7.75) 0.030 (0.76) 0.200 (5.08) 0.115 (2.93) 0.100 (2.54) 0.015 (0.38) 0.020 (0.50) 0.016 (0.41) 0.100 [2.54] 0.012 (0.30) 0.008 (0.21) 0.425 (10.80) 0.400 (10.16) NOTE All dimensions are in inches (millimeters) (c) 2003 Fairchild Semiconductor Corporation Page 7 of 10 6/30/03 PHOTOTRANSISTOR OPTOCOUPLERS H11AV1-M H11AV1A-M H11AV2-M H11AV2A-M ORDERING INFORMATION Order Entry Identifier Order Entry Identifier S SR2 N/A V N/A SV SR2V Option Surface Mount Lead Bend Surface Mount; Tape and reel 0.4" Lead Spacing VDE 0884 VDE 0884, 0.4" Lead Spacing VDE 0884, Surface Mount VDE 0884, Surface Mount, Tape & Reel Example H11AV1S-M H11AV1SR2-M H11AV1A-M H11AV1V-M H11AV1AV-M H11AV1SV-M H11AV1SR2V-M MARKING INFORMATION 1 H11AV1 V 3 4 2 6 X YY Q 5 White Package Definitions 1 2 3 4 5 6 Fairchild logo Device number VDE mark (Note: Only appears on parts ordered with VDE option - See order entry table) One digit year code * One digit for white package parts, e.g., `3' Two digit work week ranging from `01' to `53' Assembly package code *Note - Parts built in the white package (M suffix) that do not have the `V' option (see definition 3 above) that are marked with date code `325' or earlier are marked in the portrait format. (c) 2003 Fairchild Semiconductor Corporation Page 8 of 10 6/30/03 PHOTOTRANSISTOR OPTOCOUPLERS H11AV1-M H11AV1A-M H11AV2-M H11AV2A-M Carrier Tape Specifications 12.0 0.1 4.5 0.20 2.0 0.05 0.30 0.05 4.0 0.1 O1.5 MIN 1.75 0.10 11.5 1.0 21.0 0.1 9.1 0.20 24.0 0.3 0.1 MAX 10.1 0.20 O1.5 0.1/-0 User Direction of Feed Reflow Profile 300 Temperature (C) 250 200 150 100 50 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 Time (Minute) Time above 183C, 120-180 sec Ramp up = 2-10C/sec * Peak reflow temperature: 245C (package surface temperature) * Time of temperature higher than 183C for 120-180 seconds * One time soldering reflow is recommended 245C peak 230C, 10-30 s (c) 2003 Fairchild Semiconductor Corporation Page 9 of 10 6/30/03 PHOTOTRANSISTOR OPTOCOUPLERS H11AV1-M H11AV1A-M H11AV2-M H11AV2A-M DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. (c) 2003 Fairchild Semiconductor Corporation Page 10 of 10 6/30/03 |
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