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Agilent ATF-501P8 High Linearity Enhancement Mode [1] Pseudomorphic HEMT in 2x2 mm2 LPCC [3] Package
Data Sheet
Features * Single voltage operation * High Linearity and P1dB * Low Noise Figure Description Agilent Technologies's ATF501P8 is a single-voltage high linearity, low noise E-pHEMT housed in an 8-lead JEDECstandard leadless plastic chip carrier (LPCC[3]) package. The device is ideal as a mediumpower amplifier. Its operating frequency range is from 50 MHz to 6 GHz. The thermally efficient package measures only 2mm x 2mm x 0.75mm. Its backside metalization provides excellent thermal dissipation as well as visual evidence of solder reflow. The device has a Point MTTF of over 300 years at a mounting temperature of +85C. All devices are 100% RF & DC tested.
Notes: 1. Enhancement mode technology employs a single positive Vgs, eliminating the need of negative gate voltage associated with conventional depletion mode devices. 2. Refer to reliability datasheet for detailed MTTF data. 3. Conforms to JEDEC reference outline MO229 for DRP-N. 4. Linearity Figure of Merit (LFOM) is essentially OIP3 divided by DC bias power.
Pin Connections and Package Marking
Source (Thermal/RF Gnd)
Pin 8 Pin 7 (Drain) Pin 6 Pin 5 Pin 1 (Source) Pin 2 (Gate) Pin 3 Pin 4 (Source)
* Excellent uniformity in product specifications * Small package size: 2.0 x 2.0 x 0.75 mm3 * Point MTTF > 300 years[2] * MSL-1 and lead-free * Tape-and-Reel packaging option available Specifications * 2 GHz; 4.5V, 280 mA (Typ.)
Bottom View
Pin 1 (Source) Pin 2 (Gate) Pin 3 Pin 4 (Source)
Pin 8
0Px
Top View
Pin 7 (Drain) Pin 6 Pin 5
* 45.5 dBm Output IP3 * 29 dBm Output Power at 1dB gain compression * 1 dB Noise Figure * 15 dB Gain * 14.5 dB LFOM[4] * 65% PAE * 23oC/W thermal resistance Applications * Front-end LNA Q2 and Q3, Driver or Pre-driver Amplifier for Cellular/ PCS and WCDMA wireless infrastructure * Driver Amplifier for WLAN, WLL/ RLL and MMDS applications * General purpose discrete E-pHEMT for other high linearity applications
Note: Package marking provides orientation and identification: "0P" = Device Code "x" = Date code indicates the month of manufacture.
ATF-501P8 Absolute Maximum Ratings[1] Symbol
VDS VGS VGD IDS IGS Pdiss Pin max. TCH TSTG ch_b
Parameter
Drain-Source Voltage[2] Gate-Source Voltage[2] Gate Drain Voltage[2] Drain Current[2] Gate Current Total Power Dissipation[3] RF Input Power Channel Temperature Storage Temperature Thermal Resistance[4]
Units
V V V A mA W dBm C C C/W
Absolute Maximum
7 -5 to 0.8 -5 to 1 1 12 3.5 30 150 -65 to 150 23
Notes: 1. Operation of this device in excess of any one of these parameters may cause permanent damage. 2. Assumes DC quiescent conditions. 3. Board (package belly) temperatureTB is 25C. Derate 43.5 mW/C for TB > 69.5C. 4. Channel-to-board thermal resistance measured using 150C Liquid Crystal Measurement method.
Product Consistency Distribution Charts at 2 GHz, 4.5V, 200 mA [5,6]
800 700 600
Ids (mA)
Vgs=0.7V
120 100
Vgs=0.65V
120
Cpk=1.76 Stdev=0.3
100 80
Cpk=1.51 Stdev=3.38
500
Vgs=0.6V
80 60
Vgs=0.55V
-3 Std
+3 Std
400 300 200 100 0 0 1 2 3 Vds (V) 4 5 6
60 40 20 0 45
-3 Std
+3 Std
40
Vgs=0.5V
20 0 27.5
28
28.5
29
29.5
30
30.5
55
65 PAE (%)
75
85
P1dB (dBm)
Figure 1. Typical IV curve (Vgs = 0.01V) per step.
100
Figure 2. P1dB.
Figure 3. PAE.
100
Cpk=1.61 Stdev=0.33
80 80
Cpk=1.1 Stdev=0.87
60
60
-3 Std
40
+3 Std
40
-3 Std
+3 Std
20
20
0 13
14
15 GAIN (dB)
16
17
0 42
43
44
45
46
47
48
49
50
OIP3 (dBm)
Figure 4. Gain.
Figure 5. OIP3.
Notes: 5. Distribution data sample size is 300 samples taken from 3 different wafers and 3 different lots. Future wafers allocated to this product may have nominal values anywhere between the upper and lower limits. 6. Measurements are made on production test board, which represents a trade-off between optimal OIP3, P1dB and VSWR. Circuit losses have been de-embedded from actual measurements.
2
ATF-501P8 Electrical Specifications TA = 25C, DC bias for RF parameters is Vds = 4.5V and Ids = 280 mA unless otherwise specified. Symbol
Vgs Vth Idss Gm
Parameter and Test Condition
Operational Gate Voltage Threshold Voltage Saturated Drain Current Transconductance Vds = 4.5V, Ids = 280 mA Vds = 4.5V, Ids = 32 mA Vds = 4.5V, Vgs = 0V Vds = 4.5V, Gm = Ids/Vgs; Vgs = Vgs1 - Vgs2 Vgs1 = 0.55V, Vgs2 = 0.5V Vds = 0V, Vgs = -4.5V f = 2 GHz f = 900 MHz f = 2 GHz f = 900 MHz f = 2 GHz f = 900 MHz f = 2 GHz f = 900 MHz f = 2 GHz f = 900 MHz Offset BW = 5 MHz Offset BW = 10 MHz
Units
V V A mmho
Min.
0.42 -- -- --
Typ.
0.55 0.33 5 1872
Max.
0.67 -- -- --
Igss NF G OIP3 P1dB PAE ACLR
Gate Leakage Current Noise Figure [1]
A dB dB dB dB dBm dBm dBm dBm % % dBc dBc
-30 -- -- 13.5 -- 43 -- 27.5 -- 50 -- -- --
-0.8 1 -- 15 16.6 45.5 42 29 27.3 65 49 63.9 64.1
-- -- -- 16.5 -- -- -- -- -- -- -- -- --
Gain[1] Output 3rd Order Intercept Point [1,2] Output 1dB Compressed [1] Power Added Efficiency[1] Adjacent Channel Leakage Power Ratio [1,3]
Notes: 1. Measurements at 2 GHz obtained using production test board described in Figure 2 while measurement at 0.9GHz obtained from load pull tuner. 2. i ) 2 GHz OIP3 test condition: F1 = 2.0 GHz, F2 = 2.01 GHz and Pin = -5 dBm per tone. ii ) 900 MHz OIP3 test condition: F1 = 900 MHz, F2 = 910 MHz and Pin = -5dBm per tone. 3. ACLR test spec is based on 3GPP TS 25.141 V5.3.1 (2002-06) - Test Model 1 - Active Channels: PCCPCH + SCH + CPICH + PICH + SCCPCH + 64 DPCH (SF=128) - Freq = 2140 MHz - Pin = -5 dBm - Channel Integrate Bandwidth = 3.84 MHz 4. Use proper bias, board, heatsinking and derating designs to ensure max channel temperature is not exceeded. See absolute max ratings and application note for more details.
Input
50 Ohm Transmission Line and Drain Bias T (0.3 dB loss)
Input Matching Circuit _mag=0.79 _ang=-164 (1.1 dB loss)
DUT
Output Matching Circuit _mag=0.69 _ang=-163 (0.9 dB loss)
50 Ohm Transmission Line and Drain Bias T (0.3 dB loss)
Output
Figure 6. Block diagram of the 2 GHz production test board used for NF, Gain, OIP3 , P1dB and PAE measurements at 2 GHz. This circuit achieves a trade-off between optimal OIP3, P1dB and VSWR. Circuit losses have been de-embedded from actual measurements.
3
1.8 nH 1.2 pF RF Input 15 nH 2.2 F 50 Ohm .02 110 Ohm .03 110 Ohm .03 50 Ohm .02 1.2 pF
3.3 nH
DUT
47 nH
RF Output
15 Ohm
2.2 F
Gate Supply
Drain Supply
Figure 3. Simplified schematic of production test board. Primary purpose is to show 15 Ohm series resistor placement in gate supply. Transmission line tapers, tee intersections, bias lines and parasitic values are not shown.
Gamma Load and Source at Optimum OIP3 and P1dB Tuning Conditions The device's optimum OIP3 and P1dB measurements were determined using a load pull system at 4.5V, 400 mA quiesent bias: Typical Gammas at Optimum OIP3 Freq (GHz)
0.9 2.0 2.4 3.9
OIP3
49.15 48.18 47.54 45.44
Gain
16.85 14.72 12.47 8.05
Optimized for maximum OIP3 P1dB PAE Gamma Source
27.86 29.36 29.10 28.49 44.20 48.89 46.83 37.02 0.5852<-135.80 0.7267<-175.37 0.6155<-171.71 0.7888<-148.43 0.4785<177.00 0.7338<179.56 0.5411<-172.02 0.5247<-145.84
Gamma Load
Typical Gammas at Optimum P1dB Freq (GHz)
0.9 2.0 2.4 3.9
OIP3
41.78 43.28 43.46 42.94
Gain
21.84 14.83 11.90 7.70
Optimized for maximum P1dB P1dB PAE Gamma Source
31.23 31.03 30.66 29.56 49.97 44.78 41.00 33.06 0.7765<168.50 0.8172<-175.74 0.8149<-163.78 0.8394<-151.21
Gamma Load
0.7589<-175.09 0.8011<-165.75 0.8042<-161.79 0.7826<-149.00
4
ATF-501P8 Typical Performance Curves (at 25C unless specified otherwise) Tuned for Optimal OIP3 at 4.5V 280 mA
55
4.5V 5.5V 3.5V
25
35
50
20 30
OIP3 (dBm)
45
GAIN
15
P1dB (dBm)
25
4.5V 5.5V 3.5V
40
10
4.5V 5.5V 3.5V
35
5
20
30
200 240 280 320 360 400 440 480 520 560 600 640
0
200 240 280 320 360 400 440 480 520 560 600 640
15
200 240 280 320 360 400 440 480 520 560 600 640
Ids (mA)
Ids (mA)
Ids (mA)
Figure 8. OIP3 vs. Ids and Vds at 2 GHz.
Figure 9. Gain vs. Ids and Vds at 2 GHz.
Figure 10. P1dB vs. Ids and Vds at 2 GHz.
60 50 40
PAE (%)
30 20 10 0
200 240 280 320 360 400 440 480 520 560 600 640
4.5V 5.5V 3.5V
Ids (mA)
Figure 11. PAE vs. Ids and Vds at 2 GHz.
5
ATF-501P8 Typical Performance Curves (at 25C unless specified otherwise) Tuned for Optimal OIP3 at 4.5V 400 mA
55 55
4.5V 5.5V 3.5V
35
50
50 30 45
45
P1dB (dBm)
OIP3 (dBm)
OIP3 (dBm)
25
4.5V 5.5V 3.5V
40
40
4.5V 5.5V 3.5V
35
20
35
30
200 240 280 320 360 400 440 480 520 560 600 640
30
200 240 280 320 360 400 440 480 520 560 600 640
15
200 240 280 320 360 400 440 480 520 560 600 640
Ids (mA)
Ids (mA)
Ids (mA)
Figure 12. OIP3 vs. Ids and Vds at 2 GHz.
Figure 13. OIP3 vs. Ids and Vds at 900 MHz.
Figure 14. P1dB vs. Ids and Vds at 2 GHz.
35
25
25
30
20
20
P1dB (dBm)
GAIN
25
10 20
4.5V 5.5V 3.5V 4.5V 5.5V 3.5V
GAIN
15
15
10
4.5V 5.5V 3.5V
5
5
15
200 240 280 320 360 400 440 480 520 560 600 640
0
200 240 280 320 360 400 440 480 520 560 600 640
0
200 240 280 320 360 400 440 480 520 560 600 640
Ids (mA)
Ids (mA)
Ids (mA)
Figure 15. P1dB vs. Ids and Vds at 900 MHz.
Figure 16. Gain vs. Ids and Vds at 2 GHz.
Figure 17. Gain vs. Ids and Vds at 900 MHz.
60 50 40
60 50 40
50
40
OIP3 (dBm)
PAE (%)
PAE (%)
30
30 20 10 0
200 240 280 320 360 400 440 480 520 560 600 640
30 20 10 0
200 240 280 320 360 400 440 480 520 560 600 640
20
4.5V 5.5V 3.5V
4.5V 5.5V 3.5V
-40C 25C 85C
10
0 0.5 1 1.5 2 2.5 3 3.5 4 Ids (mA) FREQUENCY (GHz)
Ids (mA)
Figure 18. PAE vs. Ids and Vds at 2 GHz.
Figure 19. PAE vs. Ids and Vds at 900 MHz.
Figure 20. OIP3 vs. Temperature and Frequency at optimum OIP3.
Note: Bias current (Ids) for the above charts are quiescent conditions. Actual level may increase or decrease depending on amount of RF drive.
6
ATF-501P8 Typical Performance Curves, continued (at 25C unless specified otherwise) Tuned for Optimal OIP3 at 4.5V, 400 mA
50 35 35
40 30 30
P1dB (dBm)
OIP3 (dBm)
30
25
-40C 25C 85C
P1dB (dBm)
25
-40C 25C 85C
20
-40C 25C 85C
20
10
20
0 0.5
1
1.5
2
2.5
3
3.5
4
15 0.5
1
1.5
2
2.5
3
3.5
4
15 0.5
1
1.5
2
2.5
3
3.5
4
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 21. OIP3 vs. Temperature and Frequency at optimum P1dB.
20
Figure 22. P1dB vs. Temperature and Frequency at optimum OIP3.
25
Figure 23. P1dB vs. Temperature and Frequency at optimum P1dB.
100
-40C 25C 85C
15
20
80
GAIN (dB)
GAIN (dB)
10
-40C 25C 85C
PAE (%)
-40C 25C 85C
15
60
10
40
5
5
20
0 0.5
1
1.5
2
2.5
3
3.5
4
0 0.5
1
1.5
2
2.5
3
3.5
4
0 0.5
1
1.5
2
2.5
3
3.5
4
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 24. Gain vs. Temperature and Frequency at optimum OIP3.
100
-40C 25C 85C
Figure 25. Gain vs. Temperature and Frequency at optimum P1dB.
55
Figure 26. PAE vs. Temperature and Frequency at optimum OIP3.
55
4.5V 5.5V 3.5V
80
50
50
4.5V 5.5V 3.5V
OIP3 (dBm)
PAE (%)
60
45
OIP3 (dBm)
Ids (mA)
45
40
40
40
20
35
35
0 0.5
30 1 1.5 2 2.5 3 3.5 4
200 240 280 320 360 400 440 480 520 560 600 640
30
200 240 280 320 360 400 440 480 520 560 600 640
FREQUENCY (GHz)
Ids (mA)
Figure 27. PAE vs. Temperature and Frequency at optimum P1dB.
Figure 28. OIP3 vs. Ids and Vds at 2 GHz.
Figure 29. OIP3 vs. Ids and Vds at 900 MHz.
Note: Bias current (Ids) for the above charts are quiescent conditions. Actual level may increase or decrease depending on amount of RF drive.
7
ATF-501P8 Typical Performance Curves, continued (at 25C unless specified otherwise) Tuned for Optimal P1dB at 4.5V, 400 mA
35 35 25
30
30
20
P1dB (dBm)
P1dB (dBm)
25
4.5V 5.5V 3.5V
25
4.5V 5.5V 3.5V
GAIN
15
10
4.5V 5.5V 3.5V
20
20 5
15
200 240 280 320 360 400 440 480 520 560 600 640
15
200 240 280 320 360 400 440 480 520 560 600 640
0
200 240 280 320 360 400 440 480 520 560 600 640
Ids (mA)
Ids (mA)
Ids (mA)
Figure 30. P1dB vs. Ids and Vds at 2 GHz.
Figure 31. P1dB vs. Ids and Vds at 900 MHz.
Figure 32. Gain vs. Ids and Vds at 2 GHz.
30
60 50
80
25
60 40
PAE (%)
PAE (%)
GAIN
20
30 20 10 0
200 240 280 320 360 400 440 480 520 560 600 640
40
4.5V 5.5V 3.5V
15
4.5V 5.5V 3.5V
10
4.5V 5.5V 3.5V
20
5
200 240 280 320 360 400 440 480 520 560 600 640
0
200 240 280 320 360 400 440 480 520 560 600 640
Ids (mA)
Ids (mA)
Ids (mA)
Figure 33. Gain vs. Ids and Vds at 900 MHz.
Figure 34. PAE vs. Ids and Vds at 2 GHz.
Figure 35. PAE vs. Ids and Vds at 900 MHz.
Note: Bias current for the above charts are quiescent conditions. Actual level may increase or decrease depending on amount of RF drive.
8
ATF-501P8 Typical Scattering Parameters, VDS = 4.5V, IDS = 280 mA Freq. GHz
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.5 2 2.5 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
S11 Mag. Ang.
0.915 0.911 0.910 0.910 0.908 0.907 0.908 0.905 0.909 0.909 0.902 0.902 0.901 0.901 0.898 0.902 0.893 0.899 0.895 0.898 0.886 0.868 0.862 0.847 0.844 0.837 0.824 0.821 0.805 -132.3 -156.2 -165.4 -170.9 -173.4 -176.1 -178.5 179.8 178.2 176.6 170.5 166.0 165.0 161.1 155.0 145.0 134.9 125.8 115.6 105.5 95.5 84.7 74.0 64.5 55.6 47.4 39.9 31.6 24.6
dB
31.6 26.2 22.8 20.3 18.7 17.1 15.8 14.7 13.6 12.7 9.1 7.1 6.6 5.0 3.0 0.9 -0.9 -3.3 -4.4 -5.3 -5.9 -6.6 -8.0 -7.9 -8.5 -9.0 -9.7 -9.8 -10.5
S21 Mag.
37.990 20.324 13.783 10.342 8.604 7.194 6.167 5.407 4.799 4.308 2.859 2.264 2.134 1.772 1.412 1.110 0.902 0.687 0.604 0.542 0.505 0.469 0.398 0.403 0.377 0.354 0.327 0.323 0.298
Ang.
112.2 99.9 94.5 91.1 88.4 86.1 84.1 82.1 80.3 78.3 70.3 64.4 63.1 57.7 49.3 37.6 22.6 9.0 -1.1 -13.0 -20.2 -29.7 -40.8 -47.5 -58.4 -67.2 -72.0 -82.7 -90.1
dB
-38.4 -37.7 -37.1 -37.1 -36.5 -35.9 -35.4 -34.9 -34.4 -34.0 -31.7 -30.5 -30.2 -28.9 -27.3 -24.7 -22.9 -22.2 -20.8 -19.6 -18.9 -17.6 -17.4 -16.0 -15.3 -14.6 -14.2 -13.4 -12.5
S12 Mag.
0.012 0.013 0.014 0.014 0.015 0.016 0.017 0.018 0.019 0.020 0.026 0.030 0.031 0.036 0.043 0.058 0.072 0.078 0.091 0.105 0.114 0.132 0.135 0.159 0.171 0.187 0.194 0.215 0.237
Ang.
29.3 24.0 24.5 27.3 29.6 32.4 34.4 36.3 38.3 39.9 45.0 46.9 47.2 47.4 46.5 43.5 35.6 27.3 22.0 12.3 9.7 0.5 -6.3 -12.3 -21.3 -30.1 -36.8 -44.6 -51.8
S22 Mag. Ang.
0.647 0.689 0.699 0.702 0.691 0.691 0.694 0.695 0.692 0.692 0.698 0.700 0.699 0.697 0.707 0.699 0.697 0.652 0.646 0.641 0.695 0.742 0.735 0.766 0.800 0.797 0.763 0.786 0.781 -160.6 -171.1 -175.7 -178.5 -179.9 178.5 177.2 175.2 175.1 173.9 169.4 165.6 163.0 159.1 153.7 146.8 145.3 134.1 117.4 115.5 104.5 91.3 88.1 78.4 68.9 65.6 51.5 38.9 29.5
MSG/MAG K dB factor
35.0 31.9 29.9 28.7 27.6 26.5 25.6 24.8 24.0 23.3 18.2 16.0 15.4 13.8 11.7 9.7 7.8 5.7 4.2 3.2 2.5 1.6 -0.1 -0.1 -0.3 -1.1 -2.3 -2.4 -3.5 0.173 0.314 0.436 0.569 0.648 0.736 0.800 0.871 0.906 0.953 1.128 1.209 1.241 1.278 1.326 1.272 1.286 1.394 1.463 1.447 1.455 1.431 1.661 1.491 1.397 1.414 1.608 1.488 1.575
40 30 20 10 0 -10 -20 0 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz)
S21 MSG MAG
9
MSG/MAG & |S21|2 (dB)
Notes: 1. S parameter is measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead.
Figure 36. MSG/MAG & |S21|2 vs. Frequency at 4.5V 280mA.
ATF-501P8 Typical Scattering Parameters, VDS = 4.5V, IDS = 200 mA Freq. GHz
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.5 2 2.5 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
S11 Mag. Ang.
0.922 0.914 0.914 0.911 0.911 0.912 0.910 0.910 0.913 0.910 0.904 0.905 0.905 0.906 0.905 0.904 0.899 0.905 0.902 0.900 0.894 0.882 0.873 0.856 0.853 0.837 0.829 0.828 0.807 -131.5 -155.7 -165.2 -170.5 -173.3 -176.0 -178.3 179.9 178.4 176.8 170.5 166.1 165.2 161.1 154.9 145.1 134.9 126.0 115.8 106.4 95.9 84.9 74.3 64.6 56.0 47.4 40.6 32.7 26.1
dB
31.1 25.7 22.3 19.8 18.3 16.7 15.4 14.2 13.2 12.2 8.7 6.7 6.1 4.5 2.6 0.4 -1.3 -3.6 -4.6 -5.6 -6.1 -7.0 -8.1 -8.1 -8.4 -8.8 -9.2 -9.5 -10.2
S21 Mag.
35.978 19.290 13.088 9.814 8.176 6.834 5.861 5.141 4.558 4.092 2.718 2.153 2.027 1.684 1.354 1.053 0.863 0.661 0.587 0.527 0.498 0.448 0.393 0.393 0.380 0.361 0.345 0.336 0.310
Ang.
112.6 100.1 94.7 91.4 88.6 86.4 84.3 82.3 80.5 78.7 70.5 64.9 63.7 58.3 50.3 38.5 23.9 10.5 0.3 -11.1 -17.7 -26.8 -38.8 -45.4 -55.0 -64.1 -72.0 -80.5 -88.2
dB
-37.7 -36.5 -36.5 -35.9 -35.4 -34.9 -34.4 -34.4 -34.0 -33.6 -31.4 -30.2 -29.9 -28.6 -27.1 -24.7 -22.9 -22.2 -20.8 -19.6 -18.9 -17.7 -17.5 -16.1 -15.6 -14.8 -14.4 -13.4 -12.5
S12 Mag.
0.013 0.015 0.015 0.016 0.017 0.018 0.019 0.019 0.020 0.021 0.027 0.031 0.032 0.037 0.044 0.058 0.072 0.078 0.091 0.105 0.114 0.130 0.133 0.156 0.166 0.182 0.190 0.213 0.236
Ang.
28.9 22.4 22.5 24.9 26.8 29.3 31.3 33.0 34.9 36.6 41.7 44.2 44.5 44.9 44.3 41.6 34.1 26.0 20.8 11.1 8.4 -0.9 -7.5 -13.1 -21.4 -29.6 -35.9 -43.3 -50.5
S22 Mag. Ang.
0.664 0.709 0.719 0.722 0.713 0.713 0.716 0.718 0.712 0.714 0.721 0.721 0.719 0.715 0.725 0.716 0.712 0.660 0.654 0.649 0.700 0.746 0.738 0.768 0.800 0.799 0.763 0.787 0.782 -159.8 -170.7 -175.4 -178.4 -179.9 178.6 177.2 175.5 175.0 173.8 169.0 165.2 162.5 158.5 152.9 145.7 144.1 132.9 116.3 114.4 103.4 90.5 87.3 77.8 68.4 65.2 51.1 38.5 29.1
MSG/MAG K dB factor
34.4 31.1 29.4 27.9 26.8 25.8 24.9 24.3 23.6 22.9 18.3 16.0 15.4 13.7 11.8 9.5 7.7 5.6 4.2 3.0 2.6 1.6 0.1 -0.1 -0.2 -1.0 -1.8 -2.0 -3.2 0.142 0.274 0.390 0.510 0.577 0.653 0.725 0.801 0.840 0.903 1.077 1.161 1.188 1.227 1.262 1.271 1.263 1.371 1.423 1.451 1.412 1.407 1.614 1.492 1.399 1.439 1.556 1.449 1.542
40 30 20 10 0 -10 -20 0 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz)
S21 MSG MAG
10
MSG/MAG & |S21|2 (dB)
Notes: 1. S parameter is measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead.
Figure 37. MSG/MAG & |S21|2 vs. Frequency at 4.5V 200mA.
ATF-501P8 Typical Scattering Parameters, VDS = 4.5V, IDS = 360 mA Freq. GHz
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.5 2 2.5 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
S11 Mag. Ang.
0.911 0.910 0.911 0.913 0.907 0.910 0.910 0.906 0.913 0.907 0.904 0.906 0.904 0.907 0.906 0.903 0.896 0.903 0.903 0.891 0.885 0.873 0.866 0.849 0.849 0.841 0.828 0.817 0.809 -132.8 -156.5 -165.8 -171.1 -173.7 -176.3 -178.6 179.7 178.0 176.4 170.3 165.9 164.8 160.9 154.7 144.8 134.7 125.6 115.0 105.6 94.9 84.3 74.0 64.3 55.7 46.6 39.0 31.0 23.9
dB
31.6 26.2 22.8 20.3 18.7 17.2 15.8 14.7 13.7 12.7 9.2 7.1 6.6 5.0 3.1 0.9 -0.8 -3.2 -4.3 -5.3 -6.0 -6.7 -7.9 -7.8 -8.4 -9.0 -9.4 -9.8 -10.3
S21 Mag.
38.110 20.415 13.848 10.397 8.640 7.232 6.200 5.431 4.826 4.328 2.878 2.275 2.146 1.783 1.424 1.114 0.907 0.691 0.612 0.544 0.504 0.465 0.403 0.406 0.379 0.353 0.337 0.322 0.304
Ang.
112.4 100.0 94.6 91.3 88.5 86.2 84.2 82.2 80.3 78.4 70.4 64.5 63.2 57.9 49.4 37.7 22.7 8.9 -1.0 -13.3 -20.0 -28.4 -41.1 -47.3 -57.9 -69.0 -73.1 -83.0 -92.7
dB
-39.2 -38.4 -37.7 -37.7 -36.5 -35.9 -35.9 -35.4 -34.9 -34.0 -32.0 -30.5 -30.2 -28.9 -27.3 -24.7 -22.7 -22.2 -20.7 -19.5 -18.8 -17.5 -17.3 -15.9 -15.2 -14.5 -14.2 -13.2 -12.4
S12 Mag.
0.011 0.012 0.013 0.013 0.015 0.016 0.016 0.017 0.018 0.020 0.025 0.030 0.031 0.036 0.043 0.058 0.073 0.078 0.092 0.106 0.115 0.133 0.137 0.161 0.174 0.189 0.196 0.218 0.240
Ang.
30.3 24.9 26.2 28.9 31.8 34.5 36.8 38.8 40.6 42.3 47.0 48.7 49.0 49.0 47.7 44.2 36.2 27.9 22.4 12.8 10.2 0.9 -5.8 -12.1 -21.3 -30.3 -37.1 -45.1 -52.4
S22 Mag. Ang.
0.649 0.692 0.701 0.704 0.693 0.694 0.696 0.697 0.695 0.694 0.698 0.702 0.701 0.699 0.708 0.701 0.699 0.654 0.647 0.642 0.697 0.743 0.735 0.768 0.801 0.800 0.763 0.787 0.783 -162.1 -171.8 -176.2 -178.9 179.7 178.2 176.9 175.6 174.8 173.7 169.4 165.5 162.8 159.0 153.6 146.7 145.1 134.0 117.3 115.4 104.4 91.3 87.9 78.3 68.8 65.5 51.4 38.7 29.3
MSG/MAG K dB factor
35.4 32.3 30.3 29.0 27.6 26.6 25.9 25.0 24.3 23.4 18.2 16.1 15.5 14.0 12.0 9.7 7.9 5.9 4.6 2.9 2.4 1.6 0.1 0.0 -0.2 -0.9 -2.0 -2.4 -3.2 0.200 0.340 0.472 0.600 0.679 0.747 0.838 0.914 0.930 0.984 1.154 1.193 1.231 1.246 1.275 1.268 1.256 1.355 1.375 1.495 1.462 1.416 1.607 1.464 1.361 1.376 1.547 1.491 1.513
40 30 20 10 0 -10 -20 0 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz)
S21 MSG MAG
11
MSG/MAG & |S21|2 (dB)
Notes: 1. S parameter is measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead.
Figure 38. MSG/MAG & |S21|2 vs. Frequency at 4.5V 360mA.
ATF-501P8 Typical Scattering Parameters, VDS = 3.5V, IDS = 280 mA Freq. GHz
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.5 2 2.5 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
S11 Mag. Ang.
0.923 0.922 0.920 0.920 0.915 0.917 0.917 0.915 0.918 0.913 0.913 0.913 0.910 0.913 0.906 0.910 0.903 0.907 0.903 0.897 0.889 0.880 0.870 0.847 0.839 0.816 0.808 0.794 0.769 -133.9 -157.1 -166.1 -171.3 -173.9 -176.5 -178.9 179.6 177.7 176.4 170.4 166.1 164.8 160.9 154.6 144.7 134.6 125.4 115.2 105.5 94.8 84.2 73.4 63.8 55.1 47.3 39.8 32.3 26.0
dB
30.6 25.2 21.8 19.3 17.7 16.2 14.8 13.6 12.7 11.7 8.1 6.1 5.6 4.0 2.1 0.1 -1.6 -3.9 -4.9 -5.6 -6.0 -6.4 -7.7 -7.5 -8.0 -8.2 -9.2 -9.0 -9.7
S21 Mag.
34.047 18.161 12.313 9.220 7.674 6.429 5.511 4.813 4.302 3.850 2.555 2.025 1.912 1.588 1.276 1.012 0.827 0.636 0.570 0.522 0.499 0.477 0.411 0.421 0.397 0.390 0.345 0.354 0.329
Ang.
111.6 99.7 94.5 91.4 88.7 86.6 84.6 82.8 81.0 79.1 72.0 66.3 65.1 60.4 52.2 41.6 27.2 14.0 5.1 -7.0 -14.5 -23.6 -33.8 -41.1 -52.2 -63.9 -70.3 -81.5 -91.7
dB
-38.4 -37.7 -37.1 -37.1 -35.9 -35.4 -34.9 -34.9 -34.4 -33.6 -31.4 -30.2 -29.9 -28.6 -26.9 -24.4 -22.5 -22.0 -20.6 -19.4 -18.8 -17.7 -17.6 -16.3 -15.8 -15.0 -14.6 -13.5 -12.6
S12 Mag.
0.012 0.013 0.014 0.014 0.016 0.017 0.018 0.018 0.019 0.021 0.027 0.031 0.032 0.037 0.045 0.060 0.075 0.079 0.093 0.107 0.115 0.131 0.132 0.153 0.163 0.178 0.186 0.211 0.234
Ang.
28.8 23.8 25.0 27.5 30.0 32.9 34.8 37.2 38.8 40.5 45.6 47.1 47.6 47.5 45.9 42.4 34.3 25.3 19.8 9.9 7.0 -2.4 -9.1 -14.5 -22.5 -30.0 -35.9 -43.3 -50.7
S22 Mag. Ang.
0.716 0.759 0.767 0.770 0.760 0.761 0.762 0.760 0.764 0.759 0.759 0.763 0.762 0.758 0.762 0.754 0.742 0.674 0.669 0.666 0.709 0.754 0.745 0.770 0.801 0.795 0.755 0.787 0.777 -164.7 -173.4 -177.3 -179.8 178.8 177.2 175.8 175.0 173.7 172.4 168.1 163.9 161.0 156.7 150.9 143.3 141.3 130.1 113.5 112.0 100.9 88.2 85.0 75.9 66.5 63.4 49.5 36.6 27.7
MSG/MAG K dB factor
34.5 31.5 29.4 28.2 26.8 25.8 24.9 24.3 23.5 22.6 18.1 15.9 15.2 13.6 11.5 9.4 7.5 5.3 3.9 2.8 2.4 1.9 0.3 0.1 -0.1 -0.8 -2.3 -2.1 -3.2 0.166 0.301 0.427 0.549 0.622 0.697 0.761 0.843 0.877 0.930 1.070 1.139 1.181 1.206 1.261 1.226 1.239 1.402 1.448 1.484 1.458 1.378 1.614 1.519 1.458 1.495 1.727 1.538 1.632
40 30 20 10 0 -10 -20 0 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz)
S21 MSG MAG
12
MSG/MAG & |S21|2 (dB)
Notes: 1. S parameter is measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead.
Figure 39. MSG/MAG & |S21|2 vs. Frequency at 3.5V 280mA.
ATF-501P8 Typical Scattering Parameters, VDS = 3.5V, IDS = 200 mA Freq. GHz
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.5 1.9 2 2.4 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
S11 Mag. Ang.
0.924 0.919 0.918 0.918 0.918 0.915 0.915 0.914 0.919 0.916 0.912 0.911 0.910 0.911 0.909 0.911 0.902 0.904 0.904 0.901 0.897 0.880 0.872 0.849 0.841 0.820 0.809 0.794 0.770 0.766 -132.7 -156.5 -165.7 -171.0 -173.6 -176.2 -178.5 179.8 178.0 176.7 170.5 166.0 164.9 160.9 154.7 144.8 134.8 125.5 115.6 105.6 95.4 84.1 73.7 64.2 55.5 47.1 39.3 32.7 25.8 21.5
dB
30.5 25.0 21.7 19.2 17.6 16.0 14.7 13.5 12.5 11.6 8.0 6.0 5.5 3.9 2.0 -0.1 -1.8 -4.1 -5.1 -5.9 -6.4 -6.9 -8.1 -7.8 -8.2 -8.5 -9.0 -9.1 -9.6 -9.2
S21 Mag.
33.400 17.862 12.118 9.080 7.556 6.328 5.422 4.739 4.232 3.788 2.515 1.991 1.882 1.562 1.255 0.988 0.813 0.624 0.555 0.509 0.477 0.450 0.393 0.408 0.391 0.377 0.354 0.350 0.332 0.346
Ang.
112.1 99.9 94.6 91.4 88.7 86.5 84.5 82.7 80.8 79.0 71.5 65.8 64.7 59.7 51.5 40.4 25.9 12.7 3.9 -8.3 -14.5 -23.9 -34.0 -42.5 -53.2 -63.5 -69.5 -84.1 -89.0 -99.8
dB
-37.1 -36.5 -36.5 -35.9 -35.4 -34.9 -34.4 -34.0 -33.6 -33.2 -31.4 -29.9 -29.6 -28.6 -26.9 -24.4 -22.6 -22.0 -20.6 -19.4 -18.8 -17.7 -17.6 -16.4 -15.8 -15.1 -14.7 -13.6 -12.6 -11.5
S12 Mag.
0.014 0.015 0.015 0.016 0.017 0.018 0.019 0.020 0.021 0.022 0.027 0.032 0.033 0.037 0.045 0.060 0.074 0.079 0.093 0.107 0.115 0.130 0.132 0.152 0.162 0.176 0.185 0.210 0.234 0.266
Ang.
28.4 22.1 22.7 24.6 26.4 29.3 31.3 33.2 35.1 36.7 42.0 44.3 44.7 45.0 43.9 41.0 33.3 24.6 19.3 9.5 6.6 -3.0 -9.7 -14.9 -22.8 -29.9 -35.9 -43.1 -50.5 -60.7
S22 Mag. Ang.
0.703 0.749 0.757 0.760 0.751 0.752 0.753 0.752 0.755 0.750 0.750 0.755 0.753 0.750 0.754 0.746 0.735 0.669 0.664 0.662 0.705 0.751 0.742 0.767 0.798 0.793 0.754 0.785 0.776 0.797 -162.3 -172.1 -176.5 -179.2 179.4 177.7 176.3 175.3 174.1 172.8 168.3 165.0 164.2 161.3 157.0 151.3 143.7 141.8 130.6 113.9 112.3 101.2 88.5 85.3 76.2 66.8 63.6 49.8 36.9 28.0
MSG/MAG K dB factor
33.8 30.8 29.1 27.5 26.5 25.5 24.6 23.7 23.0 22.4 18.2 15.8 15.2 13.5 11.5 9.3 7.4 5.0 3.8 2.7 2.3 1.5 0.0 0.0 -0.2 -1.0 -2.1 -2.1 -3.1 -2.6 0.150 0.269 0.390 0.496 0.559 0.651 0.717 0.777 0.806 0.870 1.057 1.126 1.157 1.215 1.244 1.225 1.255 1.438 1.455 1.466 1.437 1.429 1.646 1.539 1.465 1.527 1.708 1.543 1.634 1.394
40 30 20 10 0 -10 -20 0 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz)
S21 MSG MAG
MSG/MAG & |S21|2 (dB)
Notes: 1. S parameter is measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead.
Figure 40. MSG/MAG & |S21|2 vs. Frequency at 3.5V 200mA.
13
ATF-501P8 Typical Scattering Parameters, VDS = 3.5V, IDS = 360 mA Freq. GHz
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.5 2 2.5 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
S11 Mag. Ang.
0.919 0.920 0.921 0.918 0.915 0.916 0.916 0.914 0.919 0.914 0.912 0.914 0.910 0.912 0.913 0.908 0.903 0.906 0.904 0.902 0.893 0.881 0.873 0.847 0.844 0.827 0.818 0.799 0.780 -134.2 -157.3 -166.4 -171.4 -174.0 -176.7 -178.9 179.4 178.1 176.2 170.2 165.8 164.7 160.8 154.4 144.7 134.5 125.5 115.1 105.3 95.0 84.1 73.6 63.9 55.4 47.4 40.2 32.9 26.7
dB
30.8 25.3 21.9 19.4 17.8 16.3 15.0 13.8 12.8 11.8 8.3 6.3 5.8 4.2 2.3 0.2 -1.5 -3.8 -4.7 -5.5 -5.8 -6.5 -7.6 -7.5 -7.8 -8.2 -8.9 -9.0 -9.3
S21 Mag.
34.576 18.445 12.499 9.372 7.792 6.537 5.596 4.888 4.370 3.911 2.596 2.059 1.940 1.618 1.296 1.023 0.844 0.647 0.582 0.532 0.513 0.474 0.417 0.424 0.407 0.389 0.357 0.353 0.344
Ang.
111.7 99.7 94.6 91.5 88.8 86.6 84.7 83.1 81.1 79.3 72.2 66.7 65.6 60.7 52.9 42.0 27.9 15.0 5.9 -6.4 -13.3 -22.0 -32.9 -40.6 -52.7 -63.7 -67.9 -81.4 -90.7
dB
-39.2 -38.4 -37.7 -37.7 -36.5 -35.9 -35.4 -34.9 -34.4 -34.0 -31.7 -30.2 -29.9 -28.6 -26.9 -24.4 -22.5 -21.9 -20.6 -19.4 -18.8 -17.7 -17.5 -16.2 -15.7 -14.9 -14.6 -13.5 -12.5
S12 Mag.
0.011 0.012 0.013 0.013 0.015 0.016 0.017 0.018 0.019 0.020 0.026 0.031 0.032 0.037 0.045 0.060 0.075 0.080 0.093 0.107 0.115 0.131 0.133 0.154 0.165 0.180 0.187 0.211 0.236
Ang.
29.6 25.5 26.7 30.0 32.7 35.7 37.9 40.0 41.8 43.0 47.8 49.2 49.3 49.0 47.3 43.2 34.8 25.7 20.3 10.3 7.5 -1.9 -8.5 -13.9 -22.0 -29.7 -35.8 -43.1 -50.4
S22 Mag. Ang.
0.722 0.763 0.771 0.773 0.763 0.765 0.765 0.764 0.768 0.762 0.761 0.766 0.765 0.761 0.765 0.756 0.745 0.676 0.670 0.666 0.710 0.756 0.746 0.772 0.802 0.793 0.759 0.786 0.777 -166.1 -174.1 -177.8 179.8 178.6 176.9 175.6 174.9 173.4 172.2 168.1 163.8 160.9 156.6 150.8 143.0 141.1 129.9 113.3 111.6 100.7 88.2 84.9 75.7 66.3 63.2 49.4 36.5 27.6
MSG/MAG K dB factor
35.0 31.9 29.8 28.6 27.2 26.1 25.2 24.3 23.6 22.9 18.0 15.9 15.2 13.6 11.8 9.4 7.6 5.3 4.1 3.1 2.7 1.9 0.5 0.2 0.1 -0.7 -1.9 -2.0 -2.7 0.191 0.336 0.460 0.599 0.665 0.744 0.809 0.871 0.892 0.963 1.103 1.142 1.185 1.210 1.221 1.236 1.233 1.392 1.430 1.433 1.416 1.388 1.577 1.507 1.407 1.457 1.637 1.526 1.549
40 30 20 10 0 -10 -20 0 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz)
S21 MSG MAG
14
MSG/MAG & |S21|2 (dB)
Notes: 1. S parameter is measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead.
Figure 41. MSG/MAG & |S21|2 vs. Frequency at 3.5V 360mA.
ATF-501P8 Typical Scattering Parameters, VDS = 5.5V, IDS = 280 mA Freq. GHz
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.5 2 2.5 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
S11 Mag. Ang.
0.914 0.912 0.914 0.913 0.909 0.910 0.911 0.908 0.913 0.907 0.903 0.905 0.903 0.903 0.900 0.902 0.895 0.903 0.898 0.898 0.884 0.871 0.864 0.849 0.854 0.841 0.834 0.824 0.813 -131.5 -155.7 -165.2 -170.5 -173.3 -176.0 -178.2 -179.8 178.4 176.7 170.5 166.2 165.2 161.0 154.7 145.0 134.9 125.8 115.4 105.8 95.4 84.6 74.2 64.8 56.1 47.7 40.0 31.9 24.7
dB
31.8 26.4 23.1 20.6 19.0 17.4 16.1 14.9 13.9 13.0 9.4 7.4 6.8 5.2 3.3 1.1 -0.8 -3.2 -4.2 -5.3 -6.0 -6.8 -8.3 -8.3 -8.7 -9.6 -10.0 -10.2 -10.7
S21 Mag.
39.087 20.961 14.228 10.678 8.871 7.417 6.365 5.577 4.956 4.446 2.951 2.331 2.197 1.822 1.455 1.129 0.916 0.695 0.616 0.546 0.499 0.458 0.386 0.385 0.366 0.330 0.317 0.310 0.291
Ang.
112.6 100.1 94.5 91.1 88.3 86.0 83.9 81.8 79.9 78.0 69.6 63.5 62.1 56.7 47.9 35.9 20.6 6.8 -3.5 -16.3 -23.2 -31.5 -43.6 -49.9 -60.4 -68.9 -73.5 -83.2 -88.9
dB
-38.4 -37.7 -37.1 -37.1 -36.5 -35.9 -35.4 -34.9 -34.4 -34.0 -32.0 -30.5 -30.2 -29.1 -27.3 -24.9 -23.0 -22.3 -20.8 -19.6 -18.9 -17.6 -17.3 -15.8 -15.2 -14.4 -14.1 -13.2 -12.4
S12 Mag.
0.012 0.013 0.014 0.014 0.015 0.016 0.017 0.018 0.019 0.020 0.025 0.030 0.031 0.035 0.043 0.057 0.071 0.077 0.091 0.105 0.114 0.132 0.137 0.162 0.174 0.191 0.198 0.219 0.240
Ang.
29.6 23.9 24.1 26.7 29.0 31.7 34.3 36.0 38.0 39.4 44.5 46.4 47.0 47.3 46.7 43.8 36.2 28.3 22.9 13.3 10.9 1.6 -5.2 -11.5 -20.9 -29.9 -37.0 -45.0 -52.2
S22 Mag. Ang.
0.618 0.661 0.670 0.674 0.662 0.663 0.666 0.667 0.664 0.664 0.672 0.674 0.674 0.672 0.685 0.679 0.681 0.648 0.641 0.636 0.694 0.741 0.731 0.768 0.804 0.807 0.768 0.792 0.788 -158.7 -170.0 -174.9 -177.9 -179.3 179.2 177.8 176.3 175.7 174.5 170.1 166.5 164.0 160.3 155.2 148.6 147.0 135.8 119.2 117.2 106.2 92.7 89.5 79.6 70.2 66.7 52.4 39.7 30.0
MSG/MAG K dB factor
35.1 32.1 30.1 28.8 27.7 26.7 25.7 24.9 24.2 23.5 18.4 16.3 15.7 14.0 12.0 9.8 8.0 6.1 4.5 3.3 2.4 1.6 -0.2 -0.3 -0.2 -1.3 -2.3 -2.5 -3.5 0.172 0.307 0.420 0.550 0.638 0.715 0.782 0.850 0.878 0.958 1.141 1.182 1.222 1.284 1.307 1.278 1.271 1.340 1.401 1.416 1.459 1.420 1.655 1.479 1.332 1.385 1.536 1.466 1.533
40 30 20 10 0 -10 -20 0 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz)
S21 MSG MAG
15
MSG/MAG & |S21|2 (dB)
Notes: 1. S parameter is measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead.
Figure 42. MSG/MAG & |S21|2 vs. Frequency at 5.5V 280mA.
ATF-501P8 Typical Scattering Parameters, VDS = 5.5V, IDS = 200 mA Freq. GHz
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.5 2 2.5 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
S11 Mag. Ang.
0.921 0.914 0.914 0.913 0.909 0.909 0.909 0.908 0.911 0.909 0.905 0.907 0.903 0.906 0.903 0.904 0.899 0.904 0.901 0.896 0.891 0.877 0.871 0.851 0.850 0.839 0.834 0.827 0.814 -130.1 -155.0 -164.6 -170.1 -172.9 -175.7 -178.1 -179.7 178.5 176.8 170.8 166.3 165.3 161.2 155.0 145.1 135.2 126.2 115.6 106.2 95.4 85.0 74.4 64.9 56.2 48.0 39.7 32.2 24.4
dB
31.8 26.4 23.0 20.5 18.9 17.4 16.0 14.9 13.8 12.9 9.3 7.3 6.8 5.2 3.2 1.0 -0.8 -3.2 -4.3 -5.4 -6.1 -7.0 -8.3 -8.2 -8.8 -9.5 -10.2 -10.2 -10.5
S21 Mag.
38.725 20.822 14.136 10.611 8.824 7.375 6.329 5.549 4.922 4.418 2.933 2.322 2.182 1.815 1.447 1.123 0.909 0.693 0.608 0.536 0.497 0.446 0.386 0.387 0.364 0.335 0.309 0.309 0.298
Ang.
113.1 100.3 94.7 91.3 88.4 86.0 83.9 81.8 80.0 78.0 69.4 63.4 62.1 56.5 47.8 35.9 20.3 6.5 -4.0 -15.9 -23.9 -32.3 -42.5 -49.0 -60.0 -67.9 -72.5 -82.4 -89.4
dB
-37.7 -37.1 -36.5 -36.5 -35.4 -35.4 -34.9 -34.4 -34.0 -33.6 -31.7 -30.5 -30.2 -28.9 -27.3 -24.9 -23.0 -22.4 -20.9 -19.7 -18.9 -17.7 -17.4 -15.9 -15.3 -14.5 -14.2 -13.3 -12.5
S12 Mag.
0.013 0.014 0.015 0.015 0.017 0.017 0.018 0.019 0.020 0.021 0.026 0.030 0.031 0.036 0.043 0.057 0.071 0.076 0.090 0.104 0.113 0.131 0.135 0.160 0.172 0.188 0.195 0.216 0.238
Ang.
29.6 22.8 22.7 24.9 26.8 29.4 31.3 32.9 35.3 36.4 41.7 44.3 44.5 45.1 44.7 42.3 35.1 27.4 22.2 12.6 10.2 1.0 -5.8 -11.8 -21.0 -29.9 -36.8 -44.6 -51.8
S22 Mag. Ang.
0.615 0.659 0.669 0.673 0.662 0.662 0.665 0.667 0.662 0.664 0.673 0.674 0.673 0.671 0.684 0.678 0.681 0.647 0.640 0.634 0.692 0.739 0.730 0.767 0.803 0.805 0.768 0.792 0.790 -156.5 -168.9 -174.1 -177.3 -178.9 179.6 178.2 176.5 176.0 174.8 170.3 166.6 164.1 160.4 155.3 148.7 147.2 136.0 119.4 117.5 106.3 92.9 89.7 79.8 70.5 66.9 52.7 39.9 30.2
MSG/MAG K dB factor
34.7 31.7 29.7 28.5 27.2 26.4 25.5 24.7 23.9 23.2 18.8 16.5 15.7 14.2 12.1 9.9 8.2 6.2 4.6 3.1 2.6 1.5 -0.1 -0.3 -0.3 -1.3 -2.5 -2.5 -3.2 0.145 0.274 0.385 0.510 0.576 0.672 0.739 0.798 0.843 0.897 1.079 1.153 1.208 1.226 1.273 1.257 1.235 1.332 1.386 1.459 1.408 1.403 1.625 1.480 1.364 1.403 1.585 1.472 1.510
40 30 20 10 0 -10 -20 0 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz)
S21 MSG MAG
16
MSG/MAG & |S21|2 (dB)
Notes: 1. S parameter is measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead.
Figure 43. MSG/MAG & |S21|2 vs. Frequency at 5.5V 200mA.
ATF-501P8 Typical Scattering Parameters, VDS = 5.5V, IDS = 360 mA Freq. GHz
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.5 2 2.5 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
S11 Mag. Ang.
0.904 0.910 0.912 0.912 0.907 0.909 0.909 0.907 0.909 0.906 0.904 0.904 0.900 0.905 0.900 0.904 0.897 0.902 0.899 0.893 0.886 0.867 0.871 0.854 0.855 0.845 0.842 0.833 0.826 -132.0 -156.2 -165.4 -170.7 -173.5 -176.1 -178.3 179.9 178.4 176.7 170.5 166.1 165.1 161.0 155.0 144.9 134.8 125.7 115.5 105.9 95.4 85.0 75.0 65.6 56.8 48.1 40.7 32.6 25.5
dB
31.8 26.4 23.0 20.5 18.9 17.4 16.0 14.9 13.9 12.9 9.4 7.3 6.8 5.2 3.3 1.1 -0.8 -3.2 -4.3 -5.3 -6.0 -6.8 -8.2 -8.2 -8.9 -9.6 -10.0 -10.2 -10.5
S21 Mag.
38.785 20.860 14.161 10.635 8.834 7.399 6.337 5.557 4.942 4.429 2.941 2.325 2.191 1.817 1.456 1.130 0.913 0.695 0.609 0.544 0.499 0.455 0.389 0.387 0.360 0.330 0.315 0.309 0.299
Ang.
113.0 100.3 94.7 91.2 88.4 86.1 83.9 81.9 80.0 78.0 69.7 63.6 62.2 56.6 48.2 35.7 20.7 7.3 -3.7 -16.0 -23.1 -31.7 -43.4 -49.9 -61.2 -68.7 -72.5 -82.1 -87.9
dB
-39.2 -38.4 -37.7 -37.1 -36.5 -35.9 -35.4 -35.4 -34.9 -34.4 -32.0 -30.8 -30.2 -29.1 -27.5 -24.9 -23.0 -22.3 -20.8 -19.6 -18.9 -17.5 -17.2 -15.7 -15.1 -14.3 -14.0 -13.2 -12.3
S12 Mag.
0.011 0.012 0.013 0.014 0.015 0.016 0.017 0.017 0.018 0.019 0.025 0.029 0.031 0.035 0.042 0.057 0.071 0.077 0.091 0.105 0.114 0.133 0.138 0.164 0.176 0.192 0.199 0.220 0.242
Ang.
29.8 24.8 25.5 27.8 30.5 33.4 35.7 37.6 39.7 41.2 46.2 47.9 48.4 48.6 47.4 44.4 36.8 28.9 23.4 13.8 11.7 2.3 -4.6 -11.0 -20.4 -29.6 -36.7 -44.6 -51.8
S22 Mag. Ang.
0.619 0.662 0.672 0.675 0.663 0.664 0.666 0.668 0.665 0.665 0.672 0.676 0.675 0.674 0.686 0.680 0.683 0.649 0.643 0.636 0.696 0.743 0.732 0.769 0.805 0.806 0.769 0.792 0.789 -159.9 -170.6 -175.3 -178.2 -179.5 178.9 177.6 176.2 175.5 174.3 170.1 166.5 163.9 160.2 155.1 148.5 146.9 135.8 119.1 117.1 106.1 92.6 89.3 79.4 70.0 66.4 52.1 39.4 29.7
MSG/MAG K dB factor
35.5 32.4 30.4 28.8 27.7 26.7 25.7 25.1 24.4 23.7 18.4 16.2 15.5 14.0 12.0 9.9 8.0 6.0 4.5 3.1 2.4 1.4 0.0 -0.2 -0.3 -1.3 -2.2 -2.4 -3.1 0.198 0.338 0.459 0.571 0.666 0.741 0.808 0.901 0.943 1.008 1.150 1.225 1.254 1.278 1.329 1.267 1.264 1.359 1.402 1.470 1.447 1.439 1.589 1.436 1.323 1.371 1.502 1.436 1.457
40 30 20 10 0 -10 -20 0 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz)
S21 MSG MAG
17
MSG/MAG & |S21|2 (dB)
Notes: 1. S parameter is measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead.
Figure 44. MSG/MAG & |S21|2 vs. Frequency at 5.5V 360mA.
Device Models Refer to Agilent's Web Site www.agilent.com/view/rf
Ordering Information Part Number
ATF-501P8-TR1 ATF-501P8-TR2 ATF-501P8-BLK
No. of Devices
3000 10000 100
Container
7" Reel 13"Reel antistatic bag
2 x 2 LPCC (JEDEC DFP-N) Package Dimensions
D1 P pin1
D pin1 1 2 8
E1 R
e
3 4
0PX
7 E 6 5
L
b
Bottom View
Top View
A
A1 A2
A
Side View
End View
DIMENSIONS SYMBOL A A1 A2 b D D1 E E1 e MIN. 0.70 0 0.203 REF 0.225 1.9 0.65 1.9 1.45 0.50 BSC NOM. 0.75 0.02 0.203 REF 0.25 2.0 0.80 2.0 1.6 0.50 BSC MAX. 0.80 0.05 0.203 REF 0.275 2.1 0.95 2.1 1.75 0.50 BSC
DIMENSIONS ARE IN MILLIMETERS
18
PCB Land Pattern and Stencil Design
2.80 (110.24) 0.70 (27.56) 0.25 (9.84) PIN 1 0.20 (7.87) Solder mask RF transmission line
+
2.72 (107.09) 0.63 (24.80) 0.22 (8.86) PIN 1 0.32 (12.79) 0.50 (19.68) 1.54 (60.61) 0.25 (9.74)
0.25 (9.84) 0.50 (19.68) 1.60 (62.99) 0.28 (10.83)
0.60 (23.62) 0.80 (31.50) 0.15 (5.91) 0.55 (21.65)
0.72 (28.35)
0.63 (24.80)
PCB Land Pattern (top view)
Notes: Typical stencil thickness is 5 mils. Measurements are in millimeters (mils).
Stencil Layout (top view)
Device Orientation
REEL 4 mm
8 mm CARRIER TAPE USER FEED DIRECTION COVER TAPE
0PX
0PX
0PX
0PX
19
Tape Dimensions
D P P0 P2 E
F W + +
D1
t1 K0 10 Max A0 B0 10 Max
Tt
DESCRIPTION
CAVITY LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER PERFORATION DIAMETER PITCH POSITION CARRIER TAPE WIDTH THICKNESS COVER TAPE WIDTH TAPE THICKNESS DISTANCE CAVITY TO PERFORATION (WIDTH DIRECTION) CAVITY TO PERFORATION (LENGTH DIRECTION)
SYMBOL
A0 B0 K0 P D1 D P0 E W t1 C Tt F P2
SIZE (mm)
2.30 0.05 2.30 0.05 1.00 0.05 4.00 0.10 1.00 + 0.25 1.50 0.10 4.00 0.10 1.75 0.10 8.00 + 0.30 8.00 - 0.10 0.254 0.02 5.4 0.10 0.062 0.001 3.50 0.05 2.00 0.05
SIZE (inches)
0.091 0.004 0.091 0.004 0.039 0.002 0.157 0.004 0.039 + 0.002 0.060 0.004 0.157 0.004 0.069 0.004 0.315 0.012 0.315 0.004 0.010 0.0008 0.205 0.004 0.0025 0.0004 0.138 0.002 0.079 0.002
www.agilent.com/semiconductors
For product information and a complete list of distributors, please go to our web site. For technical assistance call: Americas/Canada: +1 (800) 235-0312 or (916) 788-6763 Europe: +49 (0) 6441 92460 China: 10800 650 0017 Hong Kong: (65) 6756 2394 India, Australia, New Zealand: (65) 6755 1939 Japan: (+81 3) 3335-8152(Domestic/International), or 0120-61-1280(Domestic Only) Korea: (65) 6755 1989 Singapore, Malaysia, Vietnam, Thailand, Philippines, Indonesia: (65) 6755 2044 Taiwan: (65) 6755 1843 Data subject to change. Copyright (c) 2003 Agilent Technologies, Inc. July 28, 2003 5988-9767EN

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