 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| MITSUBISHI SEMICONDUCTOR M54527P 6-UNIT 150mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54527P is six-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. PIN CONFIGURATION (TOP VIEW) IN1 1 IN2 2 IN3 3 INPUTS IN4 4 IN5 5 14 O1 13 O2 12 O3 11 O4 10 O5 9 O6 8 COM COMMON OUTPUTS FEATURES q High breakdown voltage (BVCEO 40V) q High-current driving (Ic(max) = 150mA) q With clamping diodes q Driving available with PMOS IC output of 8-18V q Wide input voltage range (VI = -40 to +40V) q Wide operating temperature range (Ta = -20 to +75C) IN6 6 GND 7 Outline 14P4 CIRCUIT SCHEMATIC COM OUTPUT APPLICATION Drives of relays and printers, digit drives of indication elements (LEDs and lamps), and MOS-bipolar logic IC interfaces 20k INPUT 20k 2k GND The six circuits share the COM and GND. FUNCTION The M54527P have six circuits consisting of NPN Darlington transistors. These ICs have resistance of 20k between input transistor bases and input pins. A spike-killer clamping diode is provided between each output pin (collector) and COM pin (pin 8). The output transistor emitters are all connected to the GND pin (pin 7). The collector current is150mA maximum. Collector-emitter supply voltage is 40V maximum. The diodes shown by broken line are parasite diodes and must not be used. Unit : ABSOLUTE MAXIMUM RATINGS Symbol VCEO IC VI IF VR Pd Topr Tstg Parameter Collector-emitter voltage Collector current Input voltage (Unless otherwise noted, Ta = -20 ~ +75C) Conditions Output, H Current per circuit output, L Ratings -0.5 ~ +40 150 -40 ~ +40 150 Unit V mA V mA V W C C Aug. 1999 Clamping diode forward current Clamping diode reverse voltage Power dissipation Operating temperature Storage temperature Ta = 25C, when mounted on board 40 1.47 -20 ~ +75 -55 ~ +125 MITSUBISHI SEMICONDUCTOR M54527P 6-UNIT 150mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE RECOMMENDED OPERATING CONDITIONS Symbol VO IC VIH VIL Output voltage Collector current Percent duty cycle less than 50 % per channel "H" input voltage "L" input voltage Parameter (Unless otherwise noted, Ta = -20 ~ +75C) Limits min 0 0 7 0 typ -- -- -- -- max 40 150 35 1 Unit V mA V V ELECTRICAL CHARACTERISTICS Symbol V (BR) CEO VCE (sat) II IIR VF IR hFE Parameter (Unless otherwise noted, Ta = -20 ~ +75C) Test conditions ICEO = 100A VI = 7V, IC = 150mA VI = 7V, IC = 100mA VI = 18V VI = 35V VI = -35V IF = 150mA VR = 40V VCE = 4V, IC = 150mA, Ta = 25C min 40 -- -- -- -- -- -- -- 800 Limits typ+ -- 1.1 1.0 0.9 1.9 -- 1.15 -- 2500 max -- 1.7 1.4 1.8 5.0 -20 1.6 100 -- Unit V V mA A V A -- Collector-emitter breakdown voltage Collector-emitter saturation voltage Input current Input reverse current Clamping diode forward voltage Clamping diode reverse current DC amplification factor + : The typical values are those measured under ambient temperature (Ta) of 25C. There is no guarantee that these values are obtained under any conditions. SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25C) Symbol ton toff Parameter Turn-on time Turn-off time CL = 15pF (note 1) Test conditions min -- -- Limits typ 35 300 max -- -- Unit ns ns NOTE 1 TEST CIRCUIT INPUT Measured device OPEN PG 50 CL OUTPUT VO TIMING DIAGRAM 50% RL 50% INPUT OUTPUT 50% 50% ton (1) Pulse generator (PG) characteristics : PRR = 1kHz, tw = 10s, tr = 6ns, tf = 6ns, ZO = 50 VP = 7VP-P (2) Input-output conditions : RL = 67.5, VO = 10V (3) Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes toff Aug. 1999 MITSUBISHI SEMICONDUCTOR M54527P 6-UNIT 150mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE TYPICAL CHARACTERISTICS Output Saturation Voltage Collector Current Characteristics 200 Thermal Derating Factor Characteristics 2.0 Power dissipation Pd (W) 1.5 Collector current Ic (mA) 150 1.0 100 VI = 7V 0.5 50 Ta = 75C Ta = 25C Ta = -20C 0 0 25 50 75 100 0 0 0.5 1.0 1.5 2.0 Ambient temperature Ta (C) Output saturation voltage VCE (sat) (V) Duty-Cycle-Collector Characteristics 200 200 Duty-Cycle-Collector Characteristics Collector current Ic (mA) 150 1~5 6 Collector current Ic (mA) 150 1~3 4 5 6 100 100 50 0 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *Ta = 25C 50 0 20 40 60 80 100 0 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *Ta = 75C 0 20 40 60 80 100 Duty cycle (%) DC Amplification Factor Collector Current Characteristics 104 7 5 Duty cycle (%) Grounded Emitter Transfer Characteristics 200 DC amplification factor hFE Collector current Ic (mA) 3 150 VCE = 4V Ta = 75C Ta = 25C Ta = -20C 103 7 5 VCE = 4V 3 Ta = 75C Ta = 25C Ta = -20C 100 50 102 1 10 3 5 7 102 3 5 7 103 0 0 1 2 3 4 5 Collector current Ic (mA) Input voltage VI (V) Aug. 1999 MITSUBISHI SEMICONDUCTOR M54527P 6-UNIT 150mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE Input Characteristics 2.0 Forward bias current IF (mA) Clamping Diode Characteristics 200 Input current II (mA) 1.5 Ta = 75C Ta = 25C Ta = -20C 150 Ta = 75C Ta = 25C Ta = -20C 1.0 100 0.5 50 0 0 5 10 15 20 25 0 0 0.5 1.0 1.5 2.0 Input voltage VI (V) Forward bias voltage VF (V) Aug. 1999 |
Price & Availability of M54527P
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |