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PRELIMINARY K6R4008V1D
Document Title
512Kx8 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges.
CMOS SRAM
Revision History
Rev No. Rev. 0.0 Rev. 0.1 Rev. 0.2 History Initial release with Preliminary. Add Low Ver. Change Icc, Isb and Isb1 Item ICC(Commercial) 8ns 10ns 12ns 15ns 8ns 10ns 12ns 15ns Previous 110mA 90mA 80mA 70mA 130mA 115mA 100mA 85mA 30mA 0.5mA Current 80mA 65mA 55mA 45mA 100mA 85mA 75mA 65mA 20mA 1.2mA Nov.23. 2001 Draft Data Aug. 20. 2001 Sep. 19. 2001 Nov. 3. 2001 Remark Preliminary Preliminary Preliminary
ICC(Industrial) ISB ISB1(L-ver.) Rev. 0.3
1. Correct AC parameters : Read & Write Cycle mA 2. Delete Low Ver. 3. Delete Data Retention Characteristics 1. Delete 12ns,15ns speed bin. 2. Change Icc for Industrial mode. Item 8ns ICC(Industrial) 10ns 1. Add the Lead Free Package type.
Preliminary
Rev. 1.0
Dec.18. 2001 Previous 100mA 85mA Current 90mA 75mA July. 26, 2004
Final
Rev. 2.0
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
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Rev. 2.0 July 2004
PRELIMINARY K6R4008V1D
4Mb Async. Fast SRAM Ordering Information
Org. 1M x4 K6R4004V1D-J(K)C(I) 08/10 K6R4008C1D-J(K,T,U)C(I) 10 512K x8 K6R4008V1D-J(K,T,U)C(I) 08/10 K6R4016C1D-J(K,T,U,E)C(I) 10 256K x16 K6R4016V1D-J(K,T,U,E)C(I,L,P) 08/10 3.3 5 3.3 8/10 10 8/10 3.3 5 8/10 10 Part Number K6R4004C1D-J(K)C(I) 10 VDD(V) 5 Speed ( ns ) 10 PKG J : 32-SOJ K : 32-SOJ(LF) Temp. & Power
CMOS SRAM
C : Commercial Temperature ,Normal Power Range I : Industrial Temperature J : 36-SOJ K : 36-SOJ(LF) ,Normal Power Range T : 44-TSOP2 L : Commercial Temperature U : 44-TSOP2(LF) ,Low Power Range P : Industrial Temperature J : 44-SOJ ,Low Power Range K : 44-SOJ(LF)
T : 44-TSOP2 U : 44-TSOP2(LF) E : 48-TBGA
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Rev. 2.0 July 2004
PRELIMINARY K6R4008V1D
512K x 8 Bit High-Speed CMOS Static RAM
FEATURES
* Fast Access Time 8,10ns(Max.) * Low Power Dissipation Standby (TTL) : 20mA(Max.) (CMOS) : 5mA(Max.) Operating K6R4008V1D-08 : 80mA(Max.) K6R4008V1D-10 : 65mA(Max.) * Single 3.3 0.3V Power Supply * TTL Compatible Inputs and Outputs * Fully Static Operation - No Clock or Refresh required * Three State Outputs * Center Power/Ground Pin Configuration * Standard Pin Configuration K6R4008V1D-J : 36-SOJ-400 K6R4008V1D-K : 36-SOJ-400(Lead-Free) K6R4008V1D-T : 44-TSOP2-400BF K6R4008V1D-U : 44-TSOP2-400BF(Lead-Free) * Operating in Commercial and Industrial Temperature range.
CMOS SRAM
GENERAL DESCRIPTION
The K6R4008V1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 524,288 words by 8 bits. The K6R4008V1D uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNGs advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The K6R4008V1D is packaged in a 400 mil 36-pin plastic SOJ and 44-pin plastic TSOP type II.
FUNCTIONAL BLOCK DIAGRAM
Clk Gen.
A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 I/O1~I/O8
Pre-Charge Circuit
Row Select
Memory Array 1024 Rows 512 x 8 Columns
Data Cont. CLK Gen.
I/O Circuit Column Select
A10 A11 A12 A13 A14 A15 A16 A17 A18
CS WE OE
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Rev. 2.0 July 2004
PRELIMINARY K6R4008V1D
PIN CONFIGURATION (Top View)
A0 A1 A2 A3 A4 CS I/O1 I/O2 Vcc Vss 1 2 3 4 5 6 7 8 9 10 36 N.C 35 A18 34 A17 33 A16 32 A15 31 OE N.C N.C A0 A1 A2 A3 A4 CS I/O1 Vcc 1 2 3 4 5 6 7 8 9 11 44 N.C 43 N.C 42 N.C 41 40 39 38 37 A18 A17 A16 A15 OE
CMOS SRAM
30 I/O8 29 I/O7
36 I/O8 35 I/O7
36-SOJ
28 Vss 27 Vcc 26 I/O6 25 I/O5 24 A14 23 A13 22 A12 21 A11 20 A10 19 N.C
I/O2 10
44-TSOP2
34 Vss 33 Vcc 32 I/O6 31 I/O5 30 29 28 27 26 A14 A13 A12 A11 A10
Vss 12 I/O3 13 I/O4 14 WE A5 A6 A7 A8 A9 15 16 17 18 19 20
I/O3 11 I/O4 12 WE A5 A6 A7 A8 A9 13 14 15 16 17 18
25 N.C 24 N.C 23 N.C
N.C 21 N.C 22
PIN FUNCTION
Pin Name A0 - A18 WE CS OE I/O1 ~ I/O8 VCC VSS N.C Pin Function Address Inputs Write Enable Chip Select Output Enable Data Inputs/Outputs Power(+3.3V) Ground No Connection
ABSOLUTE MAXIMUM RATINGS*
Parameter Voltage on Any Pin Relative to VSS Voltage on VCC Supply Relative to VSS Power Dissipation Storage Temperature Operating Temperature Commercial Industrial Symbol VIN, VOUT VCC PD TSTG TA TA Rating -0.5 to 4.6 -0.5 to 4.6 1.0 -65 to 150 0 to 70 -40 to 85 Unit V V W C C C
* Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
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Rev. 2.0 July 2004
PRELIMINARY K6R4008V1D
RECOMMENDED DC OPERATING CONDITIONS*(TA=0 to 70C)
Parameter Supply Voltage Ground Input High Voltage Input Low Voltage Symbol VCC VSS VIH VIL Min 3.0 0 2.0 -0.3** Typ 3.3 0 Max 3.6 0 VCC+0.3*** 0.8 Unit V V V V
CMOS SRAM
* The above parameters are also guaranteed at industrial temperature range. ** VIL(Min) = -2.0V a.c(Pulse Width 8ns) for I 20mA. *** VIH(Max) = VCC + 2.0V a.c (Pulse Width 8ns) for I 20mA
DC AND OPERATING CHARACTERISTICS*(TA=0 to 70C, Vcc=3.30.3V, unless otherwise specified)
Parameter Input Leakage Current Output Leakage Current Operating Current Symbol ILI ILO ICC VIN=VSS to VCC CS=VIH or OE=VIH or WE=VIL VOUT=VSS to VCC Min. Cycle, 100% Duty CS=VIL, VIN=VIH or VIL, IOUT=0mA Com. Ind. Standby Current ISB ISB1 Output Low Voltage Level Output High Voltage Level VOL VOH Min. Cycle, CS=VIH f=0MHz, CSVCC-0.2V, VINVCC-0.2V or VIN0.2V IOL=8mA IOH=-4mA 8ns 10ns 8ns 10ns Test Conditions Min -2 -2 2.4 Max 2 2 80 65 90 75 20 5 0.4 V V mA Unit A A mA
* The above parameters are also guaranteed at industrial temperature range.
CAPACITANCE*(TA=25C, f=1.0MHz)
Item Input/Output Capacitance Input Capacitance
* Capacitance is sampled and not 100% tested.
Symbol CI/O CIN
Test Conditions VI/O=0V VIN=0V
TYP -
Max 8 6
Unit pF pF
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Rev. 2.0 July 2004
PRELIMINARY K6R4008V1D
AC CHARACTERISTICS(TA=0 to 70C, VCC=3.30.3V, unless otherwise noted.)
TEST CONDITIONS*
Parameter Input Pulse Levels Input Rise and Fall Times Input and Output timing Reference Levels Output Loads
*The above test conditions are also applied at industrial temperature range.
CMOS SRAM
Value 0V to 3V 3ns 1.5V See below
Output Loads(A)
Output Loads(B) for tHZ, tLZ, tWHZ, tOW, tOLZ & tOHZ RL = 50 +3.3V
DOUT
VL = 1.5V
ZO = 50 30pF* DOUT 353
319
5pF*
* Capacitive Load consists of all components of the test environment.
* Including Scope and Jig Capacitance
READ CYCLE*
Parameter Read Cycle Time Address Access Time Chip Select to Output Output Enable to Valid Output Chip Enable to Low-Z Output Output Enable to Low-Z Output Chip Disable to High-Z Output Output Disable to High-Z Output Output Hold from Address Change Chip Selection to Power Up Time Chip Selection to Power DownTime Symbol tRC tAA tCO tOE tLZ tOLZ tHZ tOHZ tOH tPU tPD
K6R4008V1D-08 K6R4008V1D-10
Min 8 3 0 0 0 3 0 -
Max 8 8 4 4 4 8
Min 10 3 0 0 0 3 0 -
Max 10 10 5 5 5 10
Unit ns ns ns ns ns ns ns ns ns ns ns
* The above parameters are also guaranteed at industrial temperature range.
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Rev. 2.0 July 2004
PRELIMINARY K6R4008V1D
WRITE CYCLE*
Parameter Write Cycle Time Chip Select to End of Write Address Set-up Time Address Valid to End of Write Write Pulse Width(OE High) Write Pulse Width(OE Low) Write Recovery Time Write to Output High-Z Data to Write Time Overlap Data Hold from Write Time End of Write to Output Low-Z Symbol tWC tCW tAS tAW tWP tWP1 tWR tWHZ tDW tDH tOW
K6R4008V1D-08 K6R4008V1D-10
CMOS SRAM
Unit ns ns ns ns ns ns ns ns ns ns ns
Min 8 6 0 6 6 8 0 0 4 0 3
Max 4 -
Min 10 7 0 7 7 10 0 0 5 0 3
Max 5 -
* The above parameters are also guaranteed at industrial temperature range.
TIMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS=OE=VIL, WE=VIH)
tRC Address tOH Data Out Previous Valid Data tAA Valid Data
TIMING WAVEFORM OF READ CYCLE(2) (WE=VIH)
tRC Address tAA tCO tHZ(3,4,5)
CS
tOHZ OE tOLZ Data out ICC ISB
NOTES(WRITE CYCLE) 1. WE is high for read cycle. 2. All read cycle timing is referenced from the last valid address to the first transition address. 3. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit condition and are not referenced to VOH or VOL levels. 4. At any given temperature and voltage condition, tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to device. 5. Transition is measured 200mV from steady state voltage with Load(B). This parameter is sampled and not 100% tested. 6. Device is continuously selected with CS=VIL. 7. Address valid prior to coincident with CS transition low. 8. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycle. High-Z
tOE tDH Valid Data tPD 50% 50%
tLZ(4,5) tPU
VCC Current
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Rev. 2.0 July 2004
PRELIMINARY K6R4008V1D
TIMING WAVEFORM OF WRITE CYCLE(1) (OE= Clock)
tWC Address tAW OE tCW(3) CS tAS(4) WE tDW Data in High-Z tOHZ(6) Data out High-Z(8) Valid Data tDH tWP(2) tWR(5)
CMOS SRAM
TIMING WAVEFORM OF WRITE CYCLE(2) (OE=Low Fixed)
tWC Address tAW CS tAS(4) WE tDW Data in High-Z tWHZ(6) Data out High-Z(8) Valid Data tOW
(10) (9)
tWR(5) tCW(3) tWP1(2)
tDH
TIMING WAVEFORM OF WRITE CYCLE(3) (CS = Controlled)
tWC Address tAW CS tAS(4) WE tDW Data in tDH tCW(3) tWP(2) tWR(5)
High-Z
tLZ tWHZ(6)
Valid Data
High-Z
Data out
High-Z
High-Z(8)
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Rev. 2.0 July 2004
PRELIMINARY K6R4008V1D
NOTES(WRITE CYCLE) 1. All write cycle timing is referenced from the last valid address to the first transition address. 2. A write occurs during the overlap of a low CS and WE. A write begins at the latest transition CS going low and WE going low ; A write ends at the earliest transition CS going high or WE going high. tWP is measured from the beginning of write to the end of write. 3. tCW is measured from the later of CS going low to end of write. 4. tAS is measured from the address valid to the beginning of write. 5. tWR is measured from the end of write to the address change. tWR applied in case a write ends as CS or WE going high. 6. If OE, CS and WE are in the Read Mode during this period, the I/O pins are in the output low-Z state. Inputs of opposite phase of the output must not be applied because bus contention can occur. 7. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycle. 8. If CS goes low simultaneously with WE going or after WE going low, the outputs remain high impedance state. 9. Dout is the read data of the new address. 10. When CS is low : I/O pins are in the output state. The input signals in the opposite phase leading to the output should not be applied.
CMOS SRAM
FUNCTIONAL DESCRIPTION
CS H L L L
* X means Dont Care.
WE X H H L
OE X* H L X
Mode Not Select Output Disable Read Write
I/O Pin High-Z High-Z DOUT DIN
Supply Current ISB, ISB1 ICC ICC ICC
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Rev. 2.0 July 2004
PRELIMINARY K6R4008V1D
PACKAGE DIMENSIONS
36-SOJ-400
#36 #19
CMOS SRAM
Units:millimeters/Inches
10.16 0.400
11.18 0.12 0.440 0.005
9.40 0.25 0.370 0.010
#1 23.90 MAX 0.941 23.50 0.12 0.925 0.005
#18 0.69 MIN 0.027
+0.10 -0.05 +0.004 0.008 -0.002
0.20
(
1.19 ) 0.047 1.27 ( ) 0.050
3.76 MAX 0.148
0.10 MAX 0.004
0.43 ( 0.95 ) 0.0375
+0.10 -0.05
0.017 +0.004 -0.002
1.27 0.050
0.71 +0.10 -0.05 0.028 +0.004 -0.002
44-TSOP2-400BF
Units:millimeters/Inches
0~8 0.25 0.010 TYP
#44
#23 0.45 ~0.75 0.018 ~ 0.030
10.16 0.400
11.76 0.20 0.463 0.008
( 0.50 ) 0.020 #1 #22
0.075 0.125 + 0.035 + 0.003
18.81 MAX 0.741 18.41 0.10 0.725 0.004
0.005 - 0.001 1.00 0.10 0.039 0.004 1.20 MAX 0.047 0.10 0.004 MAX
( 0.805 ) 0.032
0.30 +0.10 -0.05 0.012 +0.004 -0.002
0.80 0.0315
0.05 MIN 0.002
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Rev. 2.0 July 2004

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