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| ASAT30 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ASAT30 is Designed for DC L B PACKAGE STYLE .250 2L FLG(A) .020 x 45 A O .130 NOM. .050 x 45 FEATURES: * * * OmnigoldTM Metalization System M F E G H I J K MAXIMUM RATINGS IC VCB VCE PDISS TJ TSTG JC O DIM A B C D E F G H I J K L MINIMUM inches / mm MAXIMUM inches / mm 10 A 60 V 35 V 140 W @ TC = 25 OC -65 C to +200 C -65 OC to +150 OC 3.5 OC/W O .055 / 1.40 .124 / 3.15 .243 / 6.17 .635 / 16.13 .555 / 14.10 .739 / 18.77 .315 / 8.00 .002 / 0.05 .055 / 1.40 .075 / 1.91 .245 / 6.22 .092 / 2.34 .065 / 1.65 .253 / 6.43 .665 / 16.89 .565 / 14.35 .749 / 19.02 .325 / 8.26 .006 / 0.15 .065 / 1.65 .095 / 2.41 .190 / 4.83 .255 / 6.48 M ORDER CODE: ASI10521 CHARACTERISTICS SYMBOL BVCEO BVCER BVEBO ICES hFE PGE C IC = 50 mA IC = 50 mA IE = 10 Ma VE = 28 V TC = 25 C O NONETEST CONDITIONS RBE = 10 MINIMUM TYPICAL MAXIMUM 35 60 4.0 5 UNITS V V V mA --dB % VCE = 5.0 V VCC = 28 V GHz IC = 1.0 A POUT = 30 W f = 1.65 10 9.0 50 100 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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